Configuration-dependent anti-ambipolar van der Waals p-n heterostructures based on pentacene single crystal and MoS2

Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits

Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized.

Recent progress in emerging two-dimensional organic-inorganic van der Waals heterojunctions

Two-dimensional (2D) materials have attracted significant attention in recent decades due to their exceptional optoelectronic properties. Among them, to meet the growing demand for multifunctional applications, 2D organic-inorganic van der Waals (vdW) heterojunctions have become increasingly popular in the development of optoelectronic devices. These heterojunctions demonstrate impressive capability to synergistically combine the favourable characteristics of organic and inorganic materials, thereby offering a wide range of advantages. Also, they enable the creation of innovative device structures and introduce novel functionalities in existing 2D materials, avoiding the need for lattice matching in different material systems. Presently, researchers are actively working on improving the performance of devices based on 2D organic-inorganic vdW heterojunctions by focusing on enhancing the quality of 2D materials, precise stacking methods, energy band regulation, and material selection. Therefore, this review presents a thorough examination of the emerging 2D organic-inorganic vdW heterojunctions, including their classification, fabrication, and corresponding devices. Additionally, this review offers profound and comprehensive insight into the challenges in this field to inspire future research directions. It is expected to propel researchers to harness the extraordinary capabilities of 2D organic-inorganic vdW heterojunctions for a wider range of applications by further advancing the understanding of their fundamental properties, expanding the range of available materials, and exploring novel device architectures. The ongoing research and development in this field hold potential to unlock captivating advancements and foster practical applications across diverse industries.

van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device

The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.

'Molecular Beam Epitaxy' on Organic Semiconductor Single Crystals: Characterization of Well-Defined Molecular Interfaces by Synchrotron Radiation X-ray Diffraction Techniques

Epitaxial growth, often termed "epitaxy", is one of the most essential techniques underpinning semiconductor electronics, because crystallinities of the materials seriously dominate operation efficiencies of the electronic devices such as power gain/consumption, response speed, heat loss, and so on. In contrast to already well-established epitaxial growth methodologies for inorganic (covalent or ionic) semiconductors, studies on inter-molecular (van der Waals) epitaxy for organic semiconductors is still in the initial stage. In the present review paper, we briefly summarize recent works on the epitaxial inter-molecular junctions built on organic semiconductor single-crystal surfaces, particularly on single crystals of pentacene and rubrene. Experimental methodologies applicable for the determination of crystal structures of such organic single-crystal-based molecular junctions are also illustrated.

Demonstration of Anti-ambipolar Switch and Its Applications for Extremely Low Power Ternary Logic Circuits

Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a very high peak-to-valley ratio (∼10⁶) and adjustable operating range characteristics was successfully demonstrated using a ZnO and dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene heterojunction structure. The entire device integration was completed at a low thermal budget of less than 200 °C, which makes this AAS device compatible with monolithic 3D integration. A 1-trit ternary full adder designed with this AAS device exhibits excellent power-delay product performance (∼122 aJ) with extremely low power (∼0.15 μW, 7 times lower than the reference circuit) and lower device count than those of other ternary device candidates.

Interface-Driven Assembly of Pentacene/MoS2 Lateral Heterostructures

Mixed-dimensional van der Waals heterostructures formed by molecular assemblies and 2D materials provide a novel platform for fundamental nanoscience and future nanoelectronics applications. Here we investigate a prototypical hybrid heterostructure between pentacene molecules and 2D MoS₂ nanocrystals, deposited on Au(111) by combining pulsed laser deposition and organic molecular beam epitaxy. The obtained structures were investigated in situ by scanning tunneling microscopy and spectroscopy and analyzed theoretically by density functional theory calculations. Our results show the formation of atomically thin pentacene/MoS₂ lateral heterostructures on the Au substrate. The most stable pentacene adsorption site corresponds to MoS₂ terminations, where the molecules self-assemble parallel to the direction of MoS₂ edges. The density of states changes sharply across the pentacene/MoS₂ interface, indicating a weak interfacial coupling, which leaves the electronic signature of MoS₂ edge states unaltered. This work unveils the self-organization of abrupt mixed-dimensional lateral heterostructures, opening to hybrid devices based on organic/inorganic one-dimensional junctions.

Multi-Bit Analog Transmission Enabled by Electrostatically Reconfigurable Ambipolar and Anti-Ambipolar Transport

Various analog applications, such as phase switching, have been demonstrated using either ambipolar or anti-ambipolar transport in two-dimensional materials. However, the availability of only one transport mode severely limits the application scope and range. This work demonstrates electrostatically reconfigurable and tunable ambipolar and anti-ambipolar transport in the same field-effect transistor using a photoactive ambipolar WSe₂ channel with gate-controlled channel and Schottky barriers. This enables the realization of in-phase, out-of-phase, and double-frequency sinusoidal output signals under dark and illumination conditions. The output waveforms were used to generate phase-, frequency-, and amplitude-modulated analog schemes for 2- and 3-bit data transmission. Evaluation of all possible schemes for their power consumption, error probability, and implementation complexity highlights the importance of switching between ambipolar and anti-ambipolar modes of transport for best transmission performance. A dual-metal contact transistor with improved linearity for harmonic and excess power suppression demonstrates further performance enhancement. Generic device architecture and operation makes this work adaptable to any ambipolar material amenable to electrostatic control.

Charge-transfer dynamics in van der Waals heterojunctions formed by thiophene-based semiconductor polymers and exfoliated franckeite investigated from resonantly core-excited electrons

Organic/inorganic van der Waals heterojunctions formed by a combination of 2D materials with semiconductor polymer films enable the fabrication of new device architectures that are interesting for electronic and optoelectronic applications. Here, we investigated the charge-transfer dynamics at the interface between 2D layered franckeite (Fr) and two thiophene-based conjugated polymers (PFO-DBT and P3HT) from the resonantly core-excited electron. The unoccupied electronic states of PFO-DBT/Fr and P3HT/Fr heterojunctions were studied using near-edge X-ray absorption fine structure (NEXAFS) and resonant Auger (RAS) synchrotron-based spectroscopies. We found evidence of ultrafast (subfemtosecond charge-transfer times) interfacial electron delocalization pathways from specific electronic states. For the interface between the PFO-DBT polymer and exfoliated franckeite, the most efficient interfacial electron delocalization pathways were found through π*(S-N) and π*(S-C) electronic states corresponding to the benzothiadiazole and thiophene units. On the other hand, for the P3HT polymer, we found that electrons excited to π-π* and S1s-π*(C-C) electronic states of the P3HT polymer are the most affected by the presence of exfoliated franckeite and consequently are the main interfacial electron-transfer pathways in this heterojunction. Our results have important implications in understanding how ultrafast electron delocalization is taking place in organic/inorganic van der Waals heterojunctions, which is relevant information in designing new devices involving these systems.

A Bi-Anti-Ambipolar Field Effect Transistor

Multistate logic is recognized as a promising approach to increase the device density of microelectronics, but current approaches are offset by limited performance and large circuit complexity. We here demonstrate a route toward increased integration density that is enabled by a mechanically tunable device concept. Bi-anti-ambipolar transistors (bi-AATs) exhibit two distinct peaks in their transconductance and can be realized by a single 2D-material heterojunction-based solid-state device. Dynamic deformation of the device reveals the co-occurrence of two conduction pathways to be the origin of this previously unobserved behavior. Initially, carrier conduction proceeds through the junction edge, but illumination and application of strain can increase the recombination rate in the junction sufficiently to support an alternative carrier conduction path through the junction area. Optical characterization reveals a tunable emission pattern and increased optoelectronic responsivity that corroborates our model. Strain control permits the optimization of the conduction efficiency through both pathways and can be employed in quaternary inverters for future multilogic applications.

Engineering of TMDC-OSC hybrid interfaces: the thermodynamics of unitary and mixed acene monolayers on MoS2

Hybrid systems of two-dimensional (2D) materials such as transition metal dichalcogenides (TMDCs) and organic semiconductors (OSCs) have become subject of great interest for future device architectures. Although OSC-TMDC hybrid systems have been used in first device demonstrations, the precise preparation of ultra-thin OSC films on TMDCs has not been addressed. Due to the weak van der Waals interaction between TMDCs and OSCs, this requires precise knowledge of the thermodynamics at hand. Here, we use temperature-programmed desorption (TPD) and Monte Carlo (MC) simulations of TPD traces to characterize the desorption kinetics of pentacene (PEN) and perfluoropentacene (PFP) on MoS₂ as a model system for OSCs on TMDCs. We show that the monolayers of PEN and PFP are thermally stabilized compared to their multilayers, which allows preparation of nominal monolayers by selective desorption of multilayers. This stabilization is, however, caused by entropy due to a high molecular mobility rather than an enhanced molecule-substrate bond. Consequently, the nominal monolayers are not densely packed films. Molecular mobility can be suppressed in mixed monolayers of PEN and PFP that, due to intermolecular attraction, form highly ordered films as shown by scanning tunneling microscopy. Although this reduces the entropic stabilization, the intermolecular attraction further stabilizes mixed films.

Few-layer and large flake size borophene: preparation with solvothermal-assisted liquid phase exfoliation

The preparation of two-dimensional boron (B) nanosheets, especially for borophene, is still a challenge because of its unique structure and complex B-B bonds in bulk boron. In the present work, a novel preparation technology for borophene with only a few layers and large flake sizes is developed by a solvothermal-assisted liquid phase exfoliation process, consisting of ball milling-thinning, solvothermal swelling, and probe ultrasonic delamination. The exfoliation effect of the bulk B precursors is related to the surface tension and Hildebrand parameter of the selected solvents such as acetone, N,N-dimethyl formamide (DMF), acetonitrile, ethanol, and N-methyl pyrrolidone (NMP), and a relative small surface tension when using solvents is favorable for the exfoliation of bulk B. Four-layer thick borophene and an average lateral size of 5.05 μm can be obtained in acetone as the exfoliating solvent. The surface composition of the exfoliated few-layer borophene with large flake size hardly changes, while the chemical state of B changes to some extent because they are partly oxidized on the surface by contaminates before and after exfoliation. This acetone solvothermal-assisted liquid phase exfoliation technique can be used to prepare high quality borophene with large horizontal sizes, and it will provide the basis to study few-layer borophene with large sizes further.

Emerging Opportunities for Electrostatic Control in Atomically Thin Devices

Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET), which is among the most ubiquitous devices in the modern world. As transistors and related electronic devices have been miniaturized to the nanometer scale, electrostatics have become increasingly important, leading to progressively sophisticated device geometries such as the finFET. With the advent of atomically thin materials in which dielectric screening lengths are greater than device physical dimensions, qualitatively different opportunities emerge for electrostatic control. In this Review, recent demonstrations of unconventional electrostatic modulation in atomically thin materials and devices are discussed. By combining low dielectric screening with the other characteristics of atomically thin materials such as relaxed requirements for lattice matching, quantum confinement of charge carriers, and mechanical flexibility, high degrees of electrostatic spatial inhomogeneity can be achieved, which enables a diverse range of gate-tunable properties that are useful in logic, memory, neuromorphic, and optoelectronic technologies.

Solution-Processed, Large-Area, Two-Dimensional Crystals of Organic Semiconductors for Field-Effect Transistors and Phototransistors

Organic electronics with π-conjugated organic semiconductors are promising candidates for the next electronics revolution. For the conductive channel, the large-area two-dimensional (2D) crystals of organic semiconductors (2DCOS) serve as useful scaffolds for modern organic electronics, benefiting not only from long-range order and low defect density nature but also from unique charge transport characteristic and photoelectrical properties. Meanwhile, the solution process with advantages of cost-effectiveness and room temperature compatibility is the foundation of high-throughput print electrical devices. Herein, we will give an insightful overview to witness the huge advances in 2DCOS over the past decade. First, the typical influencing factors and state-of-the-art assembly strategies of the solution-process for large-area 2DCOS over sub-millimeter even to wafer size are discussed accompanying rational evaluation. Then, the charge transport characteristics and contact resistance of 2DCOS-based transistors are explored. Following this, beyond single transistors, the p-n junction devices and planar integrated circuits based on 2DCOS are also emphasized. Furthermore, the burgeoning phototransistors (OPTs) based on crystals in the 2D limits are elaborated. Next, we emphasized the unique and enhanced photoelectrical properties based on a hybrid system with other 2D van der Waals solids. Finally, frontier insights and opportunities are proposed, promoting further research in this field.

Organic-based inverters: basic concepts, materials, novel architectures and applications

The review article covers the materials and techniques employed to fabricate organic-based inverter circuits and highlights their novel architectures, ground-breaking performances and potential applications.

Photoinduced Carrier Dynamics at the Interface of Pentacene and Molybdenum Disulfide

Understanding of photoinduced interfacial carrier dynamics in organic-transition metal dichalcogenides heterostructures is very important for the enhancement of their potential photoelectronic conversion efficiencies. In this work we have used density functional theory (DFT) calculations and DFT-based fewest-switches surface-hopping dynamics simulations to explore the photoinduced hole transfer and subsequent nonadiabatic electron-hole recombination dynamics taking place at the interface of pentacene and MoS₂ in pentacene@MoS₂. Upon photoexcitation the electronic transition mainly occurs on the MoS₂ monolayer, which corresponds to moving an electron to the MoS₂ conduction band. As a result, a hole is left in the valence band. This hole state is energetically lower than certain occupied states of the pentacene molecule; thus, the interfacial hole transfer from MoS₂ to pentacene is favorable in energy. In terms of nonadiabatic dynamics simulations, the hole transfer time to the HOMO-1 state of the pentacene is estimated to be about 600 fs; however, the following hole relaxation process from HOMO-1 to HOMO takes much longer time of ca. 15 ps due to the large energy gap between HOMO-1 and HOMO. Moreover, our results also show that the subsequent radiationless recombination process between the hole transferred to the pentacene molecule and the remaining electron on the MoS₂ CBM needs about 10.2 ns. The computational results shed important mechanistic insights on the interfacial carrier dynamics of mixed-dimensional pentacene@MoS₂. These insights could help to design excellent interfaces for organic-TMDs heterostructures.

2D-Organic Hybrid Heterostructures for Optoelectronic Applications

The unique properties of hybrid heterostructures have motivated the integration of two or more different types of nanomaterials into a single optoelectronic device structure. Despite the promising features of organic semiconductors, such as their acceptable optoelectronic properties, availability of low-cost processes for their fabrication, and flexibility, further optimization of both material properties and device performances remains to be achieved. With the emergence of atomically thin 2D materials, they have been integrated with conventional organic semiconductors to form multidimensional heterostructures that overcome the present limitations and provide further opportunities in the field of optoelectronics. Herein, a comprehensive review of emerging 2D-organic heterostructures-from their synthesis and fabrication to their state-of-the-art optoelectronic applications-is presented. Future challenges and opportunities associated with these heterostructures are highlighted.

Hybrid Characteristics of MoS2 Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor

An n-type MoS₂ monolayer grown by chemical vapor deposition method was partially hybridized with an organic semiconducting p-type tetracene thin film. The photoluminescence (PL) intensity in the hybrid region of the MoS₂/tetracene is clearly lower than that of pristine tetracene because of the charge-transfer effect, which was confirmed by the decrease in exciton lifetimes. Decrease in the temperature led to blue-shift in the PL peak position of MoS₂ layers and, consequently, the PL intensities of both tetracene and MoS₂ considerably increased owing to the decrease in phonon interaction. The PL spectra of bound excitons in the hybrid region were clearly observed at low temperatures, indicating the formation of trap states. The lateral-type n-p heterojunction field-effect transistors (FETs) using the MoS₂/tetracene hybrid as an active layer showed gate-tunable rectification I- V and anti-ambipolar field-effect characteristics with hysteresis effect. The charge transport characteristics across the n-p heterojunction of the hybrid region of the FET can be explained in terms of the Shockley-Read-Hall trap-intermediated tunneling and Langevin recombination mechanisms. To improve the performance of MoS₂/tetracene-based FET, a dielectric hexagonal boron nitride (h-BN) thin layer was inserted between the SiO₂ surface and the active MoS₂ layer. We observed the decrease in the hysteresis effect and threshold voltage of the h-BN/MoS₂/tetracene-based FETs due to the decrease in the number of traps at the interface. The performance of h-BN/MoS₂/tetracene FET device was also enhanced after the annealing process.

Multi-Valued Logic Circuits Based on Organic Anti-ambipolar Transistors

Multivalued logic circuits, which can handle more information than conventional binary logic circuits, have attracted much attention as a promising way to improve the data-processing capabilities of integrated circuits. In this study, we developed a ternary inverter based on organic field-effect transistors (OFET) as a potential component of high-performance and flexible integrated circuits. Key elements are anti-ambipolar and n-type OFETs connected in series. First, we demonstrate an organic ternary inverter that exhibits three distinct logic states. Second, the operating voltage was greatly reduced by taking advantage of an Al₂O₃ gate dielectric. Finally, the operating voltage was finely tuned by the designing of the device geometry. These results are achievable owing to the flexible controllability of the device configuration, suggesting that the organic ternary inverter plays an important role with regard to high-performance organic integrated circuits.

Electrically driven lasers from van der Waals heterostructures

Van der Waals heterostructures (vdWHs) have opened new avenues for fundamental scientific studies and design of novel devices. Although numerous reports have demonstrated vdWH optoelectronic devices, no report on vdWH lasers can be found to date. In this paper we demonstrated electrically driven vdWH lasers for the first time, and the lasers were realized from ZnO microwire/MgO/p-GaN structures. By coating Ag films on the top surfaces of the ZnO microwires, the current injection and lasing directionality of the vdWH lasers have been improved significantly, and this improvement can be attributed to the high conductivity and reflectivity of the Ag film. The output power of the device can reach 2.41 μW under 14 mA drive current, which is among the highest values ever reported for ZnO based lasers. Our results may provide a promising way to electrically pumped lasers based on micro/nano-structures.

The organic-2D transition metal dichalcogenide heterointerface

Since the first isolation of graphene, new classes of two-dimensional (2D) materials have offered fascinating platforms for fundamental science and technology explorations at the nanometer scale. In particular, 2D transition metal dichalcogenides (TMD) such as MoS2 and WSe2 have been intensely investigated due to their unique electronic and optical properties, including tunable optical bandgaps, direct-indirect bandgap crossover, strong spin-orbit coupling, etc., for next-generation flexible nanoelectronics and nanophotonics applications. On the other hand, organics have always been excellent materials for flexible electronics. A plethora of organic molecules, including donors, acceptors, and photosensitive molecules, can be synthesized using low cost and scalable procedures. Marrying the fields of organics and 2D TMDs will bring benefits that are not present in either material alone, enabling even better, multifunctional flexible devices. Central to the realization of such devices is a fundamental understanding of the organic-2D TMD interface. Here, we review the organic-2D TMD interface from both chemical and physical perspectives. We discuss the current understanding of the interfacial interactions between the organic layers and the TMDs, as well as the energy level alignment at the interface, focusing in particular on surface charge transfer and electronic screening effects. Applications from the literature are discussed, especially in optoelectronics and p-n hetero- and homo-junctions. We conclude with an outlook on future scientific and device developments based on organic-2D TMD heterointerfaces.

Carrier Transport and Photoresponse in GeSe/MoS2 Heterojunction p-n Diodes

Simple stacking of thin van der Waals 2D materials with different physical properties enables one to create heterojunctions (HJs) with novel functionalities and new potential applications. Here, a 2D material p-n HJ of GeSe/MoS₂ is fabricated and its vertical and horizontal carrier transport and photoresponse properties are studied. Substantial rectification with a very high contrast (>10⁴ ) through the potential barrier in the vertical-direction tunneling of HJs is observed. The negative differential transconductance with high peak-to-valley ratio (>10⁵ ) due to the series resistance change of GeSe, MoS₂ , and HJs at different gate voltages is observed. Moreover, strong and broad-band photoresponse via the photoconductive effect are also demonstrated. The explored multifunctional properties of the GeSe/MoS₂ HJs are expected to be important for understanding the carrier transport and photoresponse of 2D-material HJs for achieving their use in various new applications in the electronics and optoelectronics fields.

When 2D Materials Meet Molecules: Opportunities and Challenges of Hybrid Organic/Inorganic van der Waals Heterostructures

van der Waals heterostructures, composed of vertically stacked inorganic 2D materials, represent an ideal platform to demonstrate novel device architectures and to fabricate on-demand materials. The incorporation of organic molecules within these systems holds an immense potential, since, while nature offers a finite number of 2D materials, an almost unlimited variety of molecules can be designed and synthesized with predictable functionalities. The possibilities offered by systems in which continuous molecular layers are interfaced with inorganic 2D materials to form hybrid organic/inorganic van der Waals heterostructures are emphasized. Similar to their inorganic counterpart, the hybrid structures have been exploited to put forward novel device architectures, such as antiambipolar transistors and barristors. Moreover, specific molecular groups can be employed to modify intrinsic properties and confer new capabilities to 2D materials. In particular, it is highlighted how molecular self-assembly at the surface of 2D materials can be mastered to achieve precise control over position and density of (molecular) functional groups, paving the way for a new class of hybrid functional materials whose final properties can be selected by careful molecular design.

Interface Engineering for Controlling Device Properties of Organic Antiambipolar Transistors

The main purpose of this study is to establish a guideline for controlling the device properties of organic antiambipolar transistors. Our key strategy is to use interface engineering to promote carrier injection at channel/electrode interfaces and carrier accumulation at a channel/dielectric interface. The effective use of carrier injection interlayers and an insulator layer with a high dielectric constant (high-k) enabled the fine tuning of device parameters and, in particular, the onset (V_on) and offset (V_off) voltages. A well-matched combination of the interlayers and a high-k dielectric layer achieved a low peak voltage (0.25 V) and a narrow on-state bias range (2.2 V), indicating that organic antiambipolar transistors have high potential as negative differential resistance devices for multivalued logic circuits.