Conjugated polymer covalently modified graphene oxide quantum dots for ternary electronic memory devices

Sodium alginate/polyvinyl alcohol semi-interpenetrating hydrogels reinforced with PEG-grafted-graphene oxide

Semi-interpenetrating polymer network (SIPN) hydrogels composed of sodium alginate/poly (vinyl alcohol), reinforced by PEG-grafted-graphene oxide (GO-g-PEG) were prepared by ionic crosslinking of sodium alginate. The impact of grafted PEG molecular weight with two molecular weights, i.e. 400 and 2000 g/mol, and component composition were studied on the morphology, swelling behavior, mechanical and dynamic properties. SEM observation showed fine dispersion and distribution of GO-g-PEG throughout the hydrogel indicating a good interaction of particles with the components. Our results revealed that although incorporating GO-g-PEG increases the water content, it significantly enhances the mechanical properties, i.e. tensile modulus, elongation at break, and fracture toughness with a more pronounced impact at higher PEG molecular weight. As a result, the tensile modulus and the elongation at break increased by 270 % and 28 %, respectively. The SA/PVA SIPN hydrogels reinforced with the GO-g-PEG exhibit a non-linear elastic behavior with a toe at low strains. This behavior is attributed to the unique structural features of SIPN hydrogels and the orientation of GO-g-PEG particles with proper interaction with the components. The small amplitude oscillatory shear was also performed to further study the impact of SA, PVA, and GO-g-PEG compositions on the microstructure of hydrogels.

Water-Soluble Polythiophene-Conjugated Polyelectrolyte-Based Memristors for Transient Electronics

The key to protect sensitive information stored in electronic memory devices from disclosure is to develop transient electronic devices that are capable of being destroyed quickly in an emergency. By using a highly water-soluble polythiophene-conjugated polyelectrolyte PTT-NMI⁺Br^- as an active material, which was synthesized by the reaction of poly[thiophene-alt-4,4-bis(6-bromohexyl)-4H-cyclopenta(1,2-b:5,4-b')dithiophene] with N-methylimidazole, a flexible electronic device, Al/PTT-NMI⁺Br^-/ITO-coated PET (ITO: indium tin oxide; PET: polyethylene terephthalate), is successfully fabricated. This device shows a typical nonvolatile rewritable resistive random access memory (RRAM) effect at a sweep voltage range of ±3 V and a history-dependent memristive switching performance at a small sweep voltage range of ±1 V. Both the learning/memorizing functions and the synaptic potentiation/depression of biological systems have been emulated. The switching mechanism for the PTT-NMI⁺Br^--based electronic device may be highly associated with ion migration under bias. Once water is added to this device, it will be destructed rapidly within 20 s due to the dissolution of the active layer. This device is not only a typical transient device but can also be used for constructing conventional memristors with long-term stability after electronic packaging. Furthermore, the soluble active layer in the device can be easily recycled from its aqueous solution and reused for fabricating new transient memristors. This work offers a train of new thoughts for designing and constructing a neuromorphic computing system that can be quickly destroyed with water in the near future.

Regulating the electrical resistive switching behaviors of polyimides through different steric hindrance substituents on 2,7-position of tetraphenyl fluorene diamines moieties

Three novel polyimides (PI(TPF-Br BPDA), PI(TPF-Ph BPDA), and PI(TPF-Ph-OMe BPDA)) with tetraphenyl fluorene (TPF) were synthesized and tested. The laboratorial results showed that the constructed electronic devices exhibited different memory behaviors due to the different steric hindrance substituents (bromine atom, phenyl, and 3,5-dimethoxyphenyl) in 2,7-position of TPF molecule. The memorizers based on PI(TPF-Br BPDA) and PI(TPF-Ph BPDA) presented volatile dynamic random access memory (DRAM) feature with turn-on voltages of −2.39 and +1.45 V, as same as −1.71 and +1.74 V, separately. However, the PI(TPF-Ph-OMe BPDA) based apparatus exhibited non-volatile write-once read-many-times memory (WORM) behavior with turn-on voltage of −1.13 V, due to the more charge traps of 3,5-dimethoxyphenyl moieties and higher dipole moment. The switching mechanism was verified by quantum simulation of energy level, electrostatic potential (ESP) surface and dipole moment. These results indicated that the electrical memory performance of the synthesized TPF-based PIs could be adjusted by modifying the electron donor structure.

Ternary Electrical Memory Devices Based on Polycarbazole: SnO2 Nanoparticles Composite Material

In this paper, a D–A polymer (PIB) containing carbazole as the donor group in the main chain and benzimidazole benzisoindolinone as the acceptor group was synthesized by Suzuki reaction. The Suzuki reaction, also known as the Suzuki coupling reaction, is a relatively new organic coupling reaction in which aryl or alkenyl boronic acids or boronic acid esters react with chlorine, bromine, iodoaromatic hydrocarbons or alkenes under the catalysis of zerovalent palladium complexes cross-coupling. A series of devices were fabricated by a spin-coating approach, and the devices all exhibited ternary resistance switching storage behavior. Among them, the composite device with the mass fraction of SnO₂ NPs of 5 wt% has the best storage performance, with a threshold voltage of −0.4 V and a switching current ratio of 1:10^1.5:10^4.5. At the same time, the current of the device remained stable after a 3-h test. Furthermore, after 10³ cycles, the current has no obvious attenuation. The device has good stability and continuity. Moreover, the conduction mechanism is further revealed. Inorganic nanoparticle composite devices have splendid memory performances and exhibit underlying application significance in storing data.

Graphene and its derivatives: understanding the main chemical and medicinal chemistry roles for biomedical applications

Over the past few years, there has been a growing potential use of graphene and its derivatives in several biomedical areas, such as drug delivery systems, biosensors, and imaging systems, especially for having excellent optical, electronic, thermal, and mechanical properties. Therefore, nanomaterials in the graphene family have shown promising results in several areas of science. The different physicochemical properties of graphene and its derivatives guide its biocompatibility and toxicity. Hence, further studies to explain the interactions of these nanomaterials with biological systems are fundamental. This review has shown the applicability of the graphene family in several biomedical modalities, with particular attention for cancer therapy and diagnosis, as a potent theranostic. This ability is derivative from the considerable number of forms that the graphene family can assume. The graphene-based materials biodistribution profile, clearance, toxicity, and cytotoxicity, interacting with biological systems, are discussed here, focusing on its synthesis methodology, physicochemical properties, and production quality. Despite the growing increase in the bioavailability and toxicity studies of graphene and its derivatives, there is still much to be unveiled to develop safe and effective formulations.

Graphic abstract

Nanometer-Scale Uniform Conductance Switching in Molecular Memristors

One common challenge highlighted in almost every review article on organic resistive memory is the lack of areal switching uniformity. This, in fact, is a puzzle because a molecular switching mechanism should ideally be isotropic and produce homogeneous current switching free from electroforming. Such a demonstration, however, remains elusive to date. The reports attempting to characterize a nanoscopic picture of switching in molecular films show random current spikes, just opposite to the expectation. Here, this longstanding conundrum is resolved by demonstrating 100% spatially homogeneous current switching (driven by molecular redox) in memristors based on Ru-complexes of azo-aromatic ligands. Through a concurrent nanoscopic spatial mapping using conductive atomic force microscopy and in operando tip-enhanced Raman spectroscopy (both with resolution <7 nm), it is shown that molecular switching in the films is uniform from hundreds of micrometers down to the nanoscale and that conductance value exactly correlates with spectroscopically determined molecular redox states. This provides a deterministic molecular route to obtain spatially homogeneous, forming-free switching that can conceivably overcome the chronic problems of robustness, consistency, reproducibility, and scalability in organic memristors.

Reconfigurable T-junction DNA Origami

DNA self-assembly allows the construction of nanometre-scale structures and devices. Structures with thousands of unique components are routinely assembled in good yield. Experimental progress has been rapid, based largely on empirical design rules. Herein, we demonstrate a DNA origami technique designed as a model system with which to explore the mechanism of assembly. The origami fold is controlled through single-stranded loops embedded in a double-stranded DNA template and is programmed by a set of double-stranded linkers that specify pairwise interactions between loop sequences. Assembly is via T-junctions formed by hybridization of single-stranded overhangs on the linkers with the loops. The sequence of loops on the template and the set of interaction rules embodied in the linkers can be reconfigured with ease. We show that a set of just two interaction rules can be used to assemble simple T-junction origami motifs and that assembly can be performed at room temperature.

Charge disproportionate molecular redox for discrete memristive and memcapacitive switching

Electronic symmetry breaking by charge disproportionation results in multifaceted changes in the electronic, magnetic and optical properties of a material, triggering ferroelectricity, metal/insulator transition and colossal magnetoresistance. Yet, charge disproportionation lacks technological relevance because it occurs only under specific physical conditions of high or low temperature or high pressure. Here we demonstrate a voltage-triggered charge disproportionation in thin molecular films of a metal-organic complex occurring in ambient conditions. This provides a technologically relevant molecular route for simultaneous realization of a ternary memristor and a binary memcapacitor, scalable down to a device area of 60 nm². Supported by mathematical modelling, our results establish that multiple memristive states can be functionally non-volatile, yet discrete-a combination perceived as theoretically prohibited. Our device could be used as a binary or ternary memristor, a binary memcapacitor or both concomitantly, and unlike the existing 'continuous state' memristors, its discrete states are optimal for high-density, ultra-low-energy digital computing.

High-performance non-volatile resistive switching memory based on a polyimide/graphene oxide nanocomposite

Chemical structure of PI-GO, schematic structure of the ITO/PI-GO/Al device and its memory characteristics.

MoS2 quantum dots chemically modified with porphyrin for solid-state broadband optical limiters

MoS₂ quantum dots (MQDs) with unique electronic and optical properties are promising broadband nonlinear optical (NLO) materials for ultrafast optical applications. It would be very interesting and challenging to functionalize MQDs with another hotspot optoelectronically active molecule "porphyrin". Herein, by treating MQDs with tetraphenylporphyrin (TPP) diazonium salts, we synthesized a novel nanohybrid material, MQD-TPP, in which TPP was covalently functionalized to the surface of MQDs via a C-S linkage. To explore its solid-state broadband NLO application, the MQD-TPP nanohybrid was encapsulated into a poly(methyl methacrylate) (PMMA) matrix for the open-aperture Z-scan measurements at 532 and 1064 nm. In contrast to MQDs/PMMA and TPP/PMMA, the MQD-TPP/PMMA film exhibited superior nonlinear optical and optical limiting responses with the largest nonlinear coefficients (β_eff) and the lowest optical limiting (OL) thresholds of about 1059.17 cm GW^-1 and 1.62 J cm^-2 at 532 nm and 831.13 cm GW^-1 and 1.97 J cm^-2 at 1064 nm, respectively.

Direct covalent modification of black phosphorus quantum dots with conjugated polymers for information storage

It has long been recognized that a small switching bias window, which is defined as the difference between the switch-on and switch-off voltages (Δ|VON - VOFF|), and a high ON/OFF current ratio would be greatly favorable to reduce the power consumption of memory devices and to decrease the information misreading rate in digital memory devices. In contrast to two-dimensional BP nanosheets, zero dimensional BP quantum dots (BPQDs) show more exciting physical and chemical properties. By using newly synthesized poly[(9,9-dioctyl-9H-fluorene)-alt-(4-(9H-carbazol-9-yl)aniline)] (PFCz-NH2) as the synthetic precursor, a highly soluble diazotated polymer, PFCz-N2+BF4-, was successfully synthesized and used to react with BPQDs under aqueous conditions to give the first conjugated polymer covalently functionalized BPQDs (PFCz-g-BPQDs). The as-prepared Al/PFCz-g-BPQDs/ITO device exhibits excellent nonvolatile rewritable memory performance, with a large ON/OFF current ratio (>107) and low switch-on/off voltages (-0.89/+1.95 V). In contrast, the Al/PFCz-NH2 : BPQDs blend/ITO device also shows a rewritable memory effect, but its ON/OFF current ratio and Δ|VON - VOFF| value are found to be 3 × 103 and 5.47 (Δ|+2.53-2.94|), respectively. This work, which offers an easy one-step strategy for direct covalent functionalization of BPQDs, opens a way to explore more applications of BPQDs.

Recent Progress in Two-Dimensional Nanomaterials for Laser Protection

The Nobel Prize in Physics 2018, “For groundbreaking inventions in the field of laser physics”, went to Arthur Ashkin and Gérard Mourou and Donna Strickland. Their inventions have revolutionized laser physics and greatly promoted the development of laser instruments, which have penetrated into many aspects of people’s daily lives. However, for the purpose of protecting human eyes or optical instruments from being damaged by both pulsed and continuous wave laser radiation, the research on laser protective materials is of particular significance. Due to the intriguing and outstanding physical, chemical, and structural properties, two-dimensional (2D) nanomaterials have been extensively studied as optical limiting (OL) materials owing to their broadband nonlinear optical (NLO) response and fast carrier relaxation dynamics that are important for reducing the laser intensity. This review systematically describes the OL mechanisms and the recent progress in 2D nanomaterials for laser protection.

An all-in-one memory cell based on a homopolymer with a pyrene side chain and its volatile and nonvolatile resistive switch behaviors

Memory devices based on PMPPE exhibit a rewritable ternary memory behaviour (0, 1, 2, three conductivity states).