TEM nano-Moiré evaluation for an invisible lattice structure near the grain interface

Enhancement of ZT in Bi0.5Sb1.5Te3 Thin Film through Lattice Orientation Management

Thermoelectric power can convert heat and electricity directly and reversibly. Low-dimensional thermoelectric materials, particularly thin films, have been considered a breakthrough for separating electronic and thermal transport relationships. In this study, a series of Bi0.5Sb1.5Te3 thin films with thicknesses of 0.125, 0.25, 0.5, and 1 μm have been fabricated by RF sputtering for the study of thickness effects on thermoelectric properties. We demonstrated that microstructure (texture) changes highly correlate with the growth thickness in the films, and equilibrium annealing significantly improves the thermoelectric performance, resulting in a remarkable enhancement in the thermoelectric performance. Consequently, the 0.5 μm thin films achieve an exceptional power factor of 18.1 μWcm-1K-2 at 400 K. Furthermore, we utilize a novel method that involves exfoliating a nanosized film and cutting with a focused ion beam, enabling precise in-plane thermal conductivity measurements through the 3ω method. We obtain the in-plane thermal conductivity as low as 0.3 Wm-1K-1, leading to a maximum ZT of 1.86, nearing room temperature. Our results provide significant insights into advanced thin-film thermoelectric design and fabrication, boosting high-performance systems.

A STEM tomographic multiplication nano-moiré method

Heterojunction optoelectronic technology has extensive applications in modern optoelectronics. The lattice quality and mismatch strain near the heterojunction interface significantly affect the photoelectric performance of a photoelectronic device. Therefore, accurately characterizing the internal three-dimensional (3D) strain at the interface in a large field is essential to evaluate the heterojunction optoelectronic device quality. Here, we propose a tomographic multiplication nano-moiré method for internal 3D strain measurements in a large field. This method operates by combining the depth sectioning technique of scanning transmission electron microscopy (STEM) with the multiplication moiré method. A mutual overlapping analytical method based on spherical aberration correction is adopted in 3D reconstruction to achieve the nanometer resolution in the depth direction. The developed method overcomes the small measurement field of view (FOV) limitation of the conventional transmission electron microscope and provides high resolution and a large measurement volume, potentially facilitating the evaluation of the large-scale 3D internal lattice quality and strain field characterization. Using the proposed method, the 3D distribution of dislocations and strain fields in the [011] direction at the heterojunction interface of the InP/InGaAs nanomaterial is intuitively, clearly, and comprehensively revealed.

3D Strain Measurement of Heterostructures Using the Scanning Transmission Electron Microscopy Moiré Depth Sectioning Method

The mechanical properties of micro- and nanoscale materials directly determine the reliability of heterostructures, microstructures, and microdevices. Therefore, an accurate evaluation of the 3D strain field at the nanoscale is important. In this study, a scanning transmission electron microscopy (STEM) moiré depth sectioning method is proposed. By optimizing the scanning parameters of electron probes at different depths of the material, the sequence STEM moiré fringes (STEM-MFs) with a large field of view, which can be hundreds of nanometers obtained. Then, the 3D STEM moiré information constructed. To some extent, multi-scale 3D strain field measurements from nanometer to the submicrometer scale actualized. The 3D strain field near the heterostructure interface and single dislocation accurately measured by the developed method.

Experimental Study of As-Cast and Heat-Treated Single-Crystal Ni-Based Superalloy Interface Using TEM

The interface plays an important role in determining strength and toughness in multiphase systems and the accurate measurement of the interface structure in single crystal (SX) Ni-based superalloy is also essential. In this work, the γ and γ' lattice constant, γ/γ' interface width at dendritic and interdendritic region of casting and solution treatment SX Ni-based superalloy is measured. Various advanced equipment is used to characterize γ/γ' interface nanostructure. A typical correlation between interface width and γ/γ' misfit is also summarized. The interface width in the dendritic region of the as-cast sample is larger than that in the interdendritic region. The misfit in the dendritic region is larger than that in the interdendritic region, which has a trend of negative development. There is a common law of the as-cast interdendritic and dendrite interface sample, where the absolute value of the misfit between the two phases is increasing with the phase interface broadening. The comparison of the as-cast and heat-treated interdendritic sample shows that after heat treatment, the phase interface width increases, the misfit decreases, the lattice constant of γ phase increases, and the lattice constant of the γ' phase decreases. By comparing the as-cast and heat treated dendrites, the absolute value of the misfit of the as-cast dendrite sample is significantly smaller than that of the heat-treated sample, and the misfit increases with the interface broadening. The comparison between interdendritic and dendritic heat-treated samples shows that the absolute value of the misfit between the two phases is smaller than that of the dendritic as-cast samples, and the absolute value of the misfit also increases with the phase interface broadening. In conclusion, property heat treatment can significantly increase the lattice constants of the γ and γ' phases, reduce the lattice mismatch at the interface of the two phases, and improve the high temperature stability of the alloy. A better understanding of the microstructure of Ni-based single crystal superalloys will provide guidance for the subsequent design of more advanced nickel-based single-crystal superalloys.

Experimental Study of the Thermally Grown Oxide and Interface of Thermal Barrier Coatings Using TEM In-Situ Heating

Thermal barrier coating (TBC) materials play important roles in gas turbine engines to protect the Ni-based superalloys from high-temperature airflow damage. In this work, the nano-mechanism of TBC failure is analyzed. A scanning transmission electron microscopy-energy dispersive spectrometer (STEM-EDS)-based analysis method was used to study the influence of element migration on the deformation behavior of the bond-coat (BC) layer during heating. The content of elements in the same region varied greatly at different temperatures, which could prove the contribution of element migration to the deformation of the BC layer. TEM in-situ heating experiments were designed and carried out to study the deformation behavior near the ceramic topcoat (TC)/thermally grown oxide (TGO) and the TGO/BC interface. The TC/TGO interface was deformed violently during heating, and obvious deformation occurred at 100 °C, while the TGO/BC interface was relatively stable. A subset geometric phase analysis method was used for full field-strain measurement. The strain value near the TGO/BC interface was relatively small and did not change significantly at lower temperatures. The TC/TGO interface is more unstable and easier to deform than the TGO/BC interface. The stress and strain evolution in the internal region of TGO at high temperatures was quantitatively analyzed. The TGO layer has a tensile stress of GPa magnitude along the interface direction at the peak position, and the shear stress is small.

Observation of Moiré Patterns in Twisted Stacks of Bilayer Perovskite Oxide Nanomembranes with Various Lattice Symmetries

The design and fabrication of novel quantum devices in which exotic phenomena arise from moiré physics have sparked a new race of conceptualization and creation of artificial lattice structures. This interest is further extended to the research on thin-film transition metal oxides, with the goal of synthesizing twisted layers of perovskite oxides concurrently revealing moiré landscapes. By utilizing a sacrificial-layer-based approach, we show that such high-quality twisted bilayer oxide nanomembrane structures can be achieved. We observe atomic-scale distinct moiré patterns directly formed with different twist angles, and the symmetry-inequivalent nanomembranes can be stacked together to constitute new complex moiré configurations. This study paves the way to the construction of higher-order artificial oxide heterostructures based on different materials/symmetries and provides the materials foundation for investigating moiré-related electronic effects in an expanded selection of twisted oxide thin films.

Experimental Study at the Phase Interface of a Single-Crystal Ni-Based Superalloy Using TEM

The single-crystal Ni-based superalloys, which have excellent mechanical properties at high temperatures, are commonly used for turbine blades in a variety of aero engines and industrial gas turbines. Focusing on the phase interface of a second-generation single-crystal Ni-based superalloy, in-situ TEM observation was conducted at room temperature and high temperatures. Intensity ratio analysis was conducted for the measurement of two-phase interface width. The improved geometric phase analysis method, where the adaptive mask selection method is introduced, was used for the measurement of the strain field near the phase interface. The strained irregular transition region is consistent with the calculated interface width using intensity ratio analysis. An intensity ratio analysis and strain measurement near the interface can corroborate and complement each other, contributing to the interface structure evaluation. Using TEM in-situ heating and Fourier transform, the change of dislocation density in the γ phase near the two-phase interface of the single-crystal Ni-based superalloy was analyzed. The dislocation density decreases first with the increase in temperature, consistent with the characteristics of metal quenching, and increases sharply at 450 °C. The correlation between the variation of dislocation density at high temperatures and the intermediate temperature brittleness was also investigated.

In situ TEM observations of growth mechanisms of PbO nanoparticles from a Sm-doped PMN-PT matrix

An excess PbO is usually added to raw materials to compensate for PbO volatilization during high-temperature sintering of a (1 - x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PMN-PT) piezoelectric material. However, the detailed growth mechanism of liquid phase and solid phase PbO due to excess PbO during the sintering process is still unknown. Here, the evolution behavior and growth mechanism of PbO nanoparticles from a Sm-doped 0.70PMN-0.30PT (Sm-PMN-PT) matrix were in situ observed using transmission electron microscopy with the help of electron beam irradiation. It was found that PbO nanodroplets firstly separated from the Sm-PMN-PT matrix, leading to rapid growth of newly formed PbO nanodroplets. Then, these nanodroplets coalesced into solid phase PbO nanoparticles with their size increased. After that, small solid phase nanoparticles further grew into large PbO nanoparticles by either rapidly engulfing adjacent nanodroplets and nanoparticles or slowly merging by matching these same crystal planes of adjacent nanoparticles. Finally, a heterojunction was formed between the formed large PbO nanoparticles and Sm-PMN-PT matrix. Our investigations demonstrate that the excess PbO could provide a liquid environment at the interface of Sm-PMN-PT, and the PbO nanoparticles formed act as the secondary phase at the grain boundaries of the Sm-PMN-PT matrix. This work provides a deep understanding of the role of excess PbO in the synthesis of lead-based piezoelectric materials.

Evaluation of interfacial misfit strain field of heterostructures using STEM nano secondary moiré method

STEM nano-moiré can achieve high-precision deformation measurement in a large field of view. In scanning moiré fringe technology, the scanning line and magnification of the existing transmission electron microscope (TEM) cannot be changed continuously. The frequency of the crystal lattice is often difficult to match with the fixed frequency of the scanning line, resulting in mostly too dense fringes that cannot be directly observed; thus, the calculation error is relatively large. This problem exists in both the STEM moiré method and the multiplication moiré method. Herein, we propose the STEM secondary nano-moiré method, i.e., a digital grating of similar frequency is superimposed on or sampling the primary moiré fringe or multiplication moiré to form the secondary moiré. The formation principle of the secondary moiré is analyzed in detail, with deduced theoretical relations for measuring the strain of STEM secondary nano-moiré fringe. The advantages of sampling secondary moiré and digital secondary moiré are compared. The optimal sampling interpolation function is obtained through error analysis. This method expands the application range of the STEM moiré method and has better practicability. Finally, the STEM secondary nano-moiré is used to accurately measure the strain field at the Si/Ge heterostructure interface, and the theoretical strain field calculated by the dislocation model is analyzed and compared. The obtained results are more compatible with the P-N dislocation model. Our work provides a practical method for the accurate evaluation of the interface characteristics of heterostructures, which is an important basis for judging the photoelectric performance of the entire device and the optimal design of the heterostructures.

Interphase interface structure and evolution of a single crystal Ni-based superalloy based on HRTEM image analysis

Interface plays an important role in determining several properties in multiphase systems. It is also essential for the accurate measurement of the interface structure in a single crystal Ni-based superalloy (SCNBS) under different conditions. In this work, a subpixel accuracy transform method is introduced in detail to measure SCNBS lattice spacing at high temperatures. An intensity ratio analysis based on a high-resolution transmission electron microscopy image is employed for SCNBS interface width analysis. In this particular sample, the interface width is about 2 nm. The evolution of the lattice spacing of an ordered γ^' phase and a solid solution γ matrix is also obtained at high temperatures. The lattice misfit between the matrix γ phase and the γ^' precipitation increases with the temperature, with values of -0.39% and -0.21% at 20°C and 600°C. In addition, the coefficient of the SCNBS thermal expansion at high temperatures is discussed.

STEM multiplication nano-moiré method with large field of view and high sensitivity

Strain is one of the important factors that determine the photoelectric and mechanical properties of semiconductor materials and devices. In this paper, the scanning transmission electron microscopy multiplication nano-moiré method is proposed to increase the measurement range and sensitivity for strain field. The formation principle, condition, and measurement range of positive and negative multiplication moiré fringes (PMMFs and NMMFs) are analysed in detail here. PMMF generally refers to the multiplication of field of view, NMMF generally refers to the multiplication of displacement measurement sensitivity. Based on the principle of multiplication nano-moiré, Theoretical formulas of the fringe spacing and strain field are derived. Compared with geometric phase analysis of deformation measurements based on high-resolution atom images, both the range of field of view and the sensitivity of displacement measurements of the multiplication moiré method are significantly improved. Most importantly, the area of field of view of the PMMF method is increased by about two orders of magnitude, which is close to micrometre-scale with strain measurement sensitivity of 2 × 10^-5. In addition, In order to improve the quality of moiré fringe and the accuracy of strain measurement, the secondary moiré method is developed.The strain laws at the interface of the InP/InGaAs superlattice materials are characterised using the developed method.

Spontaneous Formation of Moiré Patterns through Self-Assembly of Janus Nanoparticles

Two periodic two-dimensional lattices overlap with each other with a twisted angle can result in moiré patterns (MPs). In this in silico study, we show that by using amphiphilic Janus nanoparticles (JNPs) as a building block, the MPs of JNPs emerge spontaneously via direct self-assembly in dilute solution without additional complicated operation. The formation of MPs is attributed to the hydrophobicity of the nanoparticles (and the so-induced "force strings" at the membrane rim) together with suitable grafted hydrophilic and hydrophobic chain lengths. The mass production of MPs with controlled size can be fulfilled by adding stabilizers that effectively reduce the line tension at the rim of membranes with MPs.

Geometric phase analysis method using a subpixel displacement match algorithm

The geometrical phase analysis (GPA) method, which is an efficient and powerful noncontact method to obtain the strain field, has already been widely applied in deformation measurement in micro- and nano-scale. It is easy to get the strain field accurately; however, the displacement field is unreliable in some cases. Therefore, a subpixel displacement match method hereby is applied in the GPA method for the first time, to the best of our knowledge, to overcome this defect. The presented algorithm's limit error of 0.01 pixel under ideal conditions can match two corresponding local areas in reference and deformation image, and, thus, the displacement with subpixel precision of this point can be established. Owing to the continuity of the displacement field, the displacements of other points can be obtained subsequently. The error that is associated with the existing method will be dealt with in detail and verified by simulation further. Combined with simulation, the performance of the presented method is demonstrated; furthermore, the noise introduced by the imaging system is taken into consideration. Finally, a typical bending test was performed, and the result agrees well with the theoretical analysis. Both the simulation and experiment results prove that the presented method is effective and robust.