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Jo J, Kang S, Heo JS, Kim Y, Park SK. Flexible Metal Oxide Semiconductor Devices Made by Solution Methods. Chemistry 2020; 26:9126-9156. [DOI: 10.1002/chem.202000090] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2020] [Indexed: 01/22/2023]
Affiliation(s)
- Jeong‐Wan Jo
- School of Electrical and Electronics EngineeringChung-Ang University Seoul 06980 Republic of Korea
- School of Advanced Materials Science and EngineeringSungkyunkwan University Suwon 16419 Republic of Korea
| | - Seung‐Han Kang
- School of Electrical and Electronics EngineeringChung-Ang University Seoul 06980 Republic of Korea
| | - Jae Sang Heo
- Department of MedicineUniversity of Connecticut School of Medicine Farmington CT 06030 USA
| | - Yong‐Hoon Kim
- School of Advanced Materials Science and EngineeringSungkyunkwan University Suwon 16419 Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan University Suwon 16419 Republic of Korea
| | - Sung Kyu Park
- School of Electrical and Electronics EngineeringChung-Ang University Seoul 06980 Republic of Korea
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Liou YR, Lin HY, Cai SY, Liao YM, Lin TY, Chen YF. Photoelectronic memory based on nitride multiple quantum wells and the hybrid of graphene nanoflakes and a-IGZO film. OPTICS EXPRESS 2020; 28:13542-13552. [PMID: 32403826 DOI: 10.1364/oe.374548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2019] [Accepted: 03/30/2020] [Indexed: 06/11/2023]
Abstract
Optical memories are vitally important for the future development of high speed and low cost information technologies. Current optical memory devices still suffer from difficulties such as scaling-down of size, short-life expectancy, and non-volatility without the control of a gate electrode. To resolve these obstacles, a robust photoelectronic memory device is designed and demonstrated based on the integration of amorphous InGaZnO (a-IGZO), GNSs, and nitride multiple-quantum-wells light-emitting diode (MQWs LED). Utilizing the inherent nature of the band alignment between a-IGZO and graphene nanosheets (GNSs), electrons can transfer from a-IGZO to GNSs causing a persistent photoconductivity (PPC). With the long-lasting lifetime of PPC, the signal can be written optically and the encoded signal can be read both electrically and optically. The read and write processes reveal little current degradation for more than 10,000 sec, even repeated for more than hundred times. The device can convert invisible information to visible signal, and the encoded information can be simply erased under a reversed bias without a gate electrode. In addition, the memory device possesses a simple vertically stacked structure for 3D integration, and it is compatible with established technologies.
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Kim J, Kwon SM, Jo C, Heo JS, Kim WB, Jung HS, Kim YH, Kim MG, Park SK. Highly Efficient Photo-Induced Charge Separation Enabled by Metal-Chalcogenide Interfaces in Quantum-Dot/Metal-Oxide Hybrid Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:16620-16629. [PMID: 32180407 DOI: 10.1021/acsami.0c01176] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Quantum dot (QD)-based optoelectronics have received great interest for versatile applications because of their excellent photosensitivity, facile solution processability, and the wide range of band gap tunability. In addition, QD-based hybrid devices, which are combined with various high-mobility semiconductors, have been actively researched to enhance the optoelectronic characteristics and maximize the zero-dimensional structural advantages, such as tunable band gap and high light absorption. However, the difficulty of highly efficient charge transfer between QDs and the semiconductors and the lack of systematic analysis for the interfaces have impeded the fidelity of this platform, resulting in complex device architectures and unsatisfactory device performance. Here, we report ultrahigh detective phototransistors with highly efficient photo-induced charge separation using a Sn2S64--capped CdSe QD/amorphous oxide semiconductor (AOS) hybrid structure. The photo-induced electron transfer characteristics at the interface of the two materials were comprehensively investigated with an array of electrochemical and spectroscopic analyses. In particular, photocurrent imaging microscopy revealed that interface engineering in QD/AOS with chelating chalcometallate ligands causes efficient charge transfer, resulting in photovoltaic-dominated responses over the whole channel area. On the other hand, monodentate ligand-incorporated QD/AOS-based devices typically exhibit limited charge transfer with atomic vibration, showing photo-thermoelectric-dominated responses in the drain electrode area.
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Affiliation(s)
- Jaehyun Kim
- Displays and Devices Research Laboratory School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
| | - Sung Min Kwon
- Displays and Devices Research Laboratory School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
| | - Chanho Jo
- Displays and Devices Research Laboratory School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
| | - Jae-Sang Heo
- Department of Medicine, University of Connecticut School of Medicine, Farmington 06030, Connecticut, United States
| | - Won Bin Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Hyun Suk Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Yong-Hoon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Myung-Gil Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Sung Kyu Park
- Displays and Devices Research Laboratory School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
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Yoo H, Kim WG, Kang BH, Kim HT, Park JW, Choi DH, Kim TS, Lim JH, Kim HJ. High Photosensitive Indium-Gallium-Zinc Oxide Thin-Film Phototransistor with a Selenium Capping Layer for Visible-Light Detection. ACS APPLIED MATERIALS & INTERFACES 2020; 12:10673-10680. [PMID: 32052953 DOI: 10.1021/acsami.9b22634] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Visible light can be detected using an indium-gallium-zinc oxide (IGZO)-based phototransistor, with a selenium capping layer (SCL) that functions as a visible light absorption layer. Selenium (Se) exhibits photoconductive properties as its conductivity increases with illumination. We report an IGZO phototransistor with an SCL (SCL/IGZO phototransistor) that demonstrated optimal photoresponse characteristics when the SCL was 150 nm thick. The SCL/IGZO phototransistor exhibited a photoresponsivity of 1.39 × 103 A/W, photosensitivity of 4.39 × 109, detectivity of 3.44 × 1013 Jones, and external quantum efficiency of 3.52 × 103% when illuminated by green light (532 nm). Ultraviolet-visible spectroscopy and ultraviolet photoelectron spectroscopy analysis showed that Se has a narrow energy band gap, in which visible light is absorbed and forms a p-n junction with IGZO so that photogenerated electron-hole pairs are easily separated, which makes recombination more challenging. We show that electrons generated in the SCL flow through the IGZO layer, which enables the phototransistor to detect visible light. Furthermore, the SCL/IGZO phototransistor exhibited excellent durability and reversibility owing to the constant light and dark current and the time-dependent photoresponse characteristics over 8000 s when a red light (635 nm) source was turned on and off at a frequency of 0.1 Hz.
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Affiliation(s)
- Hyukjoon Yoo
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Won-Gi Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Byung Ha Kang
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Hyung Tae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Jeong Woo Park
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Dong Hyun Choi
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Tae Sang Kim
- Frontier Technology Team, Display Research Center, Samsung Display, 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17113, Republic of Korea
| | - Jun Hyung Lim
- Frontier Technology Team, Display Research Center, Samsung Display, 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17113, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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Kim J, Kwon SM, Kang YK, Kim YH, Lee MJ, Han K, Facchetti A, Kim MG, Park SK. A skin-like two-dimensionally pixelized full-color quantum dot photodetector. SCIENCE ADVANCES 2019; 5:eaax8801. [PMID: 31803836 PMCID: PMC6874493 DOI: 10.1126/sciadv.aax8801] [Citation(s) in RCA: 42] [Impact Index Per Article: 8.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/01/2019] [Accepted: 10/02/2019] [Indexed: 05/12/2023]
Abstract
Direct full-color photodetectors without sophisticated color filters and interferometric optics have attracted considerable attention for widespread applications. However, difficulties of combining various multispectral semiconductors and improving photon transfer efficiency for high-performance optoelectronic devices have impeded the translation of these platforms into practical realization. Here, we report a low-temperature (<150°C) fabricated two-dimensionally pixelized full-color photodetector by using monolithic integration of various-sized colloidal quantum dots (QDs) and amorphous indium-gallium-zinc-oxide semiconductors. By introducing trap-reduced chelating chalcometallate ligands, highly efficient charge carrier transport and photoresistor-free fine-patterning of QD layers were successfully realized, exhibiting extremely high photodetectivity (>4.2 × 1017 Jones) and photoresponsivity (>8.3 × 103 A W-1) in a broad range of wavelengths (365 to 1310 nm). On the basis of these technologies, a wavelength discriminable phototransistor circuit array (>600 phototransistors) was implemented on a skin-like soft platform, which is expected to be a versatile and scalable approach for wide spectral image sensors and human-oriented biological devices.
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Affiliation(s)
- Jaehyun Kim
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
| | - Sung-Min Kwon
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
| | - Yeo Kyung Kang
- Department of Chemistry, Chung-Ang University, Seoul 06974, Korea
| | - Yong-Hoon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Myung-Jae Lee
- Division of Nano and Energy Convergence Research, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333, Techno Jungang Daero, Hyeonpung-Myeon, Dalseong-Gun, Daegu 42988, Korea
| | - Kwangjoon Han
- Hyundai Motor Group R&D Division, Hwaseong-si, 18280, Korea
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, USA
- Flexterra Corporation, 8025 Lamon Avenue, Skokie, IL 60077, USA
| | - Myung-Gil Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Sung Kyu Park
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
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Chung J, Tak YJ, Kim WG, Kang BH, Kim HJ. Artificially Fabricated Subgap States for Visible-Light Absorption in Indium-Gallium-Zinc Oxide Phototransistor with Solution-Processed Oxide Absorption Layer. ACS APPLIED MATERIALS & INTERFACES 2019; 11:38964-38972. [PMID: 31573177 DOI: 10.1021/acsami.9b14154] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We present a solution-processed oxide absorption layer (SAL) for detecting visible light of long wavelengths (635 and 532 nm) for indium-gallium-zinc oxide (IGZO) phototransistors. The SALs were deposited onto sputtered IGZO using precursor solutions composed of IGZO, which have the same atomic configuration as that of the channel layer, resulting in superior interface characteristics. We artificially generated subgap states in the SAL using a low annealing temperature (200 °C), minimizing the degradation of the electrical characteristics of thin-film transistor. These subgap states improved the photoelectron generation in SALs under visible light of long wavelength despite the wide band gap of IGZO (∼3.7 eV). As a result, IGZO phototransistors with SALs have both high optical transparency and superior optoelectronic characteristics such as a high photoresponsivity of 206 A/W and photosensitivity of ∼106 under the influence of a green (532 nm) laser. Furthermore, endurance tests proved that the IGZO phototransistor with SALs can operate stably under red laser illumination switched on and off at 0.05 Hz for 7200 s.
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Affiliation(s)
- Jusung Chung
- School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Korea
| | - Young Jun Tak
- School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Korea
| | - Won-Gi Kim
- School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Korea
| | - Byung Ha Kang
- School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Korea
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Zhu H, Liu A, Luque HL, Sun H, Ji D, Noh YY. Perovskite and Conjugated Polymer Wrapped Semiconducting Carbon Nanotube Hybrid Films for High-Performance Transistors and Phototransistors. ACS NANO 2019; 13:3971-3981. [PMID: 30844243 DOI: 10.1021/acsnano.8b07567] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Although organic-inorganic halide perovskites continue to generate considerable interest due to great potentials for various optoelectronic devices, there are some critical obstacles to practical applications, including lead toxicity, relatively low field-effect mobility, and strong hysteresis during operation. This paper proposes a universal approach to significantly improve mobility and operational stability with reduced dual-sweep hysteresis for perovskite-based thin film transistors (TFTs) by coupling low-dimensional lead-free perovskite material (C6H5C2H4NH3)2SnI4 (hereafter abbreviated as (PEA)2SnI4) with embedded conjugated polymer wrapped semiconducting carbon nanotubes (semi-CNTs). In (PEA)2SnI4/semi-CNT hybrid TFTs, semi-CNTs can provide highway-like transport paths, enabling smoother carrier transport with less trapping and scattering. We also demonstrate the performance of (PEA)2SnI4/semi-CNT hybrid phototransistors with ultrahigh photoresponsivity ( R) of 6.3 × 104 A/W and detectivity ( D*) of 1.12 × 1017 Jones, which is about 2 or 3 orders of magnitude higher than that of the best devices available to date. The results indicate promising potentials for solution-processed perovskite/semi-CNT hybrid platforms, and the developed strategy can be applied for high-performance perovskite nanomaterial optoelectronics.
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Affiliation(s)
- Huihui Zhu
- Department of Chemical Engineering , Pohang University of Science and Technology (POSTECH) , 77 Cheongam-Ro, Nam-Gu , Pohang 37673 , Republic of Korea
- Department of Energy and Materials Engineering , Dongguk University , 30 Pildong-ro, 1-gil, Jung-gu , Seoul 04620 , Republic of Korea
| | - Ao Liu
- Department of Chemical Engineering , Pohang University of Science and Technology (POSTECH) , 77 Cheongam-Ro, Nam-Gu , Pohang 37673 , Republic of Korea
- Department of Energy and Materials Engineering , Dongguk University , 30 Pildong-ro, 1-gil, Jung-gu , Seoul 04620 , Republic of Korea
| | - Hector Lopez Luque
- Department of Energy and Materials Engineering , Dongguk University , 30 Pildong-ro, 1-gil, Jung-gu , Seoul 04620 , Republic of Korea
| | - Huabin Sun
- Department of Energy and Materials Engineering , Dongguk University , 30 Pildong-ro, 1-gil, Jung-gu , Seoul 04620 , Republic of Korea
| | - Dongseob Ji
- Department of Chemical Engineering , Pohang University of Science and Technology (POSTECH) , 77 Cheongam-Ro, Nam-Gu , Pohang 37673 , Republic of Korea
- Department of Energy and Materials Engineering , Dongguk University , 30 Pildong-ro, 1-gil, Jung-gu , Seoul 04620 , Republic of Korea
| | - Yong-Young Noh
- Department of Chemical Engineering , Pohang University of Science and Technology (POSTECH) , 77 Cheongam-Ro, Nam-Gu , Pohang 37673 , Republic of Korea
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Han G, Cao S, Yang Q, Yang W, Guo T, Chen H. High-Performance All-Solution-Processed Flexible Photodetector Arrays Based on Ultrashort Channel Amorphous Oxide Semiconductor Transistors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:40631-40640. [PMID: 30398043 DOI: 10.1021/acsami.8b14143] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Amorphous oxide semiconductor (AOS) field-effect phototransistors (FEPTs) are promising candidates for emerging photodetectors. Unfortunately, traditional lateral AOS FEPTs suffer from low photosensitivity, slow response time and inadequate mechanical flexibility, which restrict their widespread commercial application. In this work, novel AOS-based vertical field-effect phototransistor (VFEPT) arrays are presented, where the semiconducting layer and source and drain electrodes are deposited by inkjet printing. Benefitted from the unique vertical structure and ultrashort channel length, the exciton dissociation, carrier transfer, and collection efficiency were dramatically enhanced, resulting in excellent photoelectric performance in VFEPT devices, which was better than that of the traditional lateral AOS phototransistors. Moreover, flexible AOS VFEPT arrays were investigated for the first time on polyimide substrates. Due to the unique vertical architecture, the carrier transport was negligibly affected by the strain-induced in-plane cracks of the semiconductor channel layer during the mechanical bending process, which overcame the maximum bending limit of traditional lateral AOS thin-film transistors to ensure a transistor technique that gives notable mechanical robustness against repeated mechanical bending. Hence, this work provided a new pathway in emerging applications for AOS photodetectors with sensitivity, transparency, and flexibility.
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Affiliation(s)
- Guoqiang Han
- School of Mechanical Engineering and Automation , Fuzhou University , Fuzhou 350108 , China
| | - Shuguang Cao
- School of Mechanical Engineering and Automation , Fuzhou University , Fuzhou 350108 , China
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Bergemann K, Léonard F. Room-Temperature Phototransistor with Negative Photoresponsivity of 10 8 A W -1 Using Fullerene-Sensitized Aligned Carbon Nanotubes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1802806. [PMID: 30247808 DOI: 10.1002/smll.201802806] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2018] [Revised: 08/29/2018] [Indexed: 06/08/2023]
Abstract
Detection of low intensity light down to a few photons requires photodetectors with high gain. A new photodetector is reported based on C60 -sensitized aligned carbon nanotube (CNT) transistors with an extremely high responsivity of 108 A W-1 (gain > 108 ) in the ultraviolet and visible range, and 720 A W-1 (gain = 940) in the infrared range. In contrast to most sensitized phototransistors that operate on the photogating effect, the new photodetector operates on the modulation of the electrons scattering in the CNTs, leading to negative photoconductivity. Comparison with similar photodetectors using random CNT networks shows the benefit of using aligned CNTs. At room temperature, the aligned CNT photodetectors are demonstrated to detect a few tens of photons per CNT.
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Kang BH, Kim WG, Chung J, Lee JH, Kim HJ. Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Detection. ACS APPLIED MATERIALS & INTERFACES 2018; 10:7223-7230. [PMID: 29405061 DOI: 10.1021/acsami.7b17897] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A homojunction-structured amorphous indium gallium zinc oxide (a-IGZO) phototransistor that can detect visible light is reported. The key element of this technology is an absorption layer composed of hydrogen-doped a-IGZO. This absorption layer is fabricated by simple hydrogen plasma doping, and subgap states are induced by increasing the amount of hydrogen impurities. These subgap states, which lead to a higher number of photoexcited carriers and aggravate the instability under negative bias illumination stress, enabled the detection of a wide range of visible light (400-700 nm). The optimal condition of the hydrogen-doped absorption layer (HAL) is fabricated at a hydrogen partial pressure ratio of 2%. As a result, the optimized a-IGZO phototransistor with the HAL exhibits a high photoresponsivity of 1932.6 A/W, a photosensitivity of 3.85 × 106, and a detectivity of 6.93 × 1011 Jones under 635 nm light illumination.
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Affiliation(s)
- Byung Ha Kang
- School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Won-Gi Kim
- School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Jusung Chung
- School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Jin Hyeok Lee
- School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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