Damage-free and rapid transfer of CVD-grown two-dimensional transition metal dichalcogenides by dissolving sacrificial water-soluble layers

Clean Transfer of Two-Dimensional Materials: A Comprehensive Review

The growth of two-dimensional (2D) materials through chemical vapor deposition (CVD) has sparked a growing interest among both the industrial and academic communities. The interest stems from several key advantages associated with CVD, including high yield, high quality, and high tunability. In order to harness the application potentials of 2D materials, it is often necessary to transfer them from their growth substrates to their desired target substrates. However, conventional transfer methods introduce contamination that can adversely affect the quality and properties of the transferred 2D materials, thus limiting their overall application performance. This review presents a comprehensive summary of the current clean transfer methods for 2D materials with a specific focus on the understanding of interaction between supporting layers and 2D materials. The review encompasses various aspects, including clean transfer methods, post-transfer cleaning techniques, and cleanliness assessment. Furthermore, it analyzes and compares the advances and limitations of these clean transfer techniques. Finally, the review highlights the primary challenges associated with current clean transfer methods and provides an outlook on future prospects.

From Material to Cameras: Low-Dimensional Photodetector Arrays on CMOS

The last two decades have witnessed a dramatic increase in research on low-dimensional material with exceptional optoelectronic properties. While low-dimensional materials offer exciting new opportunities for imaging, their integration in practical applications has been slow. In fact, most existing reports are based on single-pixel devices that cannot rival the quantity and quality of information provided by massively parallelized mega-pixel imagers based on complementary metal-oxide semiconductor (CMOS) readout electronics. The first goal of this review is to present new opportunities in producing high-resolution cameras using these new materials. New photodetection methods and materials in the field are presented, and the challenges involved in their integration on CMOS chips for making high-resolution cameras are discussed. Practical approaches are then presented to address these challenges and methods to integrate low-dimensional material on CMOS. It is also shown that such integrations could be used for ultra-low noise and massively parallel testing of new material and devices. The second goal of this review is to present the colossal untapped potential of low-dimensional material in enabling the next-generation of low-cost and high-performance cameras. It is proposed that low-dimensional materials have the natural ability to create excellent bio-inspired artificial imaging systems with unique features such as in-pixel computing, multi-band imaging, and curved retinas.

Study of Ion Velocity Effect on the Band Gap of CVD-Grown Few-Layer MoS2

The present work reports on a simple chemical vapor deposition (CVD) technique that employs alkali halide (NaCl) to synthesize high-quality few-layer MoS2 by reducing growth temperature from 850 to 650 °C, and its ion irradiation study for band gap modification. The Raman peak position difference of A1g to E12g of ≈24.5 cm-1 for the synthesized MoS2 corresponds to a few layers (<5 monolayers) of MoS2 on the substrate, as also confirmed by atomic force microscopy (AFM). The optical image shows the continuous distribution of flakes throughout the substrate and the average area of flakes ≈0.2 μm2 as confirmed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analysis. Swift heavy-ion (SHI) irradiation at 60, 100, and 150 MeV ion energies of 1 × 1012 ions/cm2 ion fluence have been used to modify the band gap in few-layer MoS2. The ions with two different energies are chosen at two sides of the Bragg peak of energy loss curve in such a way as to have the same value of electronic energy loss (Se) but different ion energies to examine the velocity effect for the ion-induced modification. The absorbance peaks for 60 and 150 MeV irradiated samples show the same effect in the band gap modification.

Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer

Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition metal dichalcogenides provide an ideal material platform, but the device performances such as the contact resistance, on/off ratio and mobility are often limited by the presence of interfacial residues caused by transfer procedures. Here, we show an ideal residue-free transfer approach using polypropylene carbonate with a negligible residue coverage of ~0.08% for monolayer MoS2 at the centimetre scale. By incorporating a bismuth semimetal contact with an atomically clean monolayer MoS2 field-effect transistor on hexagonal boron nitride substrate, we obtain an ultralow Ohmic contact resistance of ~78 Ω µm, approaching the quantum limit, and a record-high on/off ratio of ~1011 at 15 K. Such an ultra-clean fabrication approach could be the ideal platform for high-performance electrical devices using large-area semiconducting transition metal dichalcogenides.

Self-Expanding Molten Salt-Driven Growth of Patterned Transition-Metal Dichalcogenide Crystals

Transition-metal dichalcogenides (TMDs) have been considered potential materials for the next generation of semiconductors. Realizing controllable growth of TMD crystals is a prerequisite for their future applications, which remains challenging. Here, we reveal a new mechanism of self-expanding molten salt-driven growth for a salt-assisted method and achieve the patterned growth of TMD single-crystal arrays with a size of hundreds of micrometers. Time-of-flight secondary ion mass spectroscopy and other spectroscopy characterizations identify the component of the molten salt solution. Microscopic characterizations reveal the existence of salt solution as an interlayer between a TMD monolayer and the silicon substrate as well as particles along the crystal edge. The edged salt solution serves as a self-expanding liquid substrate, which confines the reactive sites to the localized liquid surface, thus avoiding random nucleation. The surface reaction also assures monolayer crystal formation due to self-limiting growth. Besides, the liquid substrate affords sources and spreads itself continuously owing to the nonwetting effect on TMD crystals, thereby facilitating the continuous extension of the TMD monolayer. This work provides novel insights into the controllable synthesis of TMD monolayers and paves the way for the fabrication of TMD-based integrated functional devices.

Salt-assisted chemical vapor deposition of two-dimensional transition metal dichalcogenides

Salt-assisted chemical vapor deposition (SA-CVD), which uses halide salts (e.g., NaCl, KBr, etc.) and molten salts (e.g., Na2MoO4, Na2WO4, etc.) as precursors, is one of the most popular methods favored for the fabrication of two-dimensional (2D) materials such as atomically thin metal chalcogenides, graphene, and h-BN. In this review, the distinct functions of halogens (F, Cl, Br, I) and alkali metals (Li, Na, K) in SA-CVD are first clarified. Based on the current development in SA-CVD growth and its related reaction modes, the existing methods are categorized into the Salt 1.0 (halide salts-based) and Salt 2.0 (molten salts-based) techniques. The achievements, advantages, and limitations of each technique are discussed in detail. Finally, new perspectives are proposed for the application of SA-CVD in the synthesis of 2D transition metal dichalcogenides for advanced electronics.

Review and comparison of layer transfer methods for two-dimensional materials for emerging applications

Two-dimensional (2D) materials offer immense potential for scientific breakthroughs and technological innovations. While early demonstrations of 2D material-based electronics, optoelectronics, flextronics, straintronics, twistronics, and biomimetic devices exploited micromechanically-exfoliated single crystal flakes, recent years have witnessed steady progress in large-area growth techniques such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and metal-organic CVD (MOCVD). However, use of high growth temperatures, chemically-active growth precursors and promoters, and the need for epitaxy often limit direct growth of 2D materials on the substrates of interest for commercial applications. This has led to the development of a large number of methods for the layer transfer of 2D materials from the growth substrate to the target application substrate with varying degrees of cleanliness, uniformity, and transfer-related damage. This review aims to catalog and discuss these layer transfer methods. In particular, the processes, advantages, and drawbacks of various transfer methods are discussed, as is their applicability to different technological platforms of interest for 2D material implementation.

Recyclable free-polymer transfer of nano-grain MoS2 film onto arbitrary substrates

Clean transfer of transition metal dichalcogenides (TMDs) film is highly desirable, as intrinsic properties of TMDs may be degraded in a conventional wet transfer process using a polymer-based resist and toxic chemical solvent. Residues from the resists often remain on the transferred TMDs, thereby causing a significant variation in their electrical and optical characteristics. Therefore, an alternative to the conventional wet transfer method is needed-one in which no residue is left behind. Herein, we report that our molybdenum disulfide (MoS₂) films synthesized by plasma-enhanced chemical vapor deposition can be easily transferred onto arbitrary substrates (such as SiO₂/Si, polyimide, fluorine-doped tin oxide, and polyethersulfone) by using water alone, i.e. without residues or chemical solvents. The transferred MoS₂ film retains its original morphology and physical properties, which are investigated by optical microscopy, atomic force microscopy, Raman, x-ray photoelectron spectroscopy, and surface tension analysis. Furthermore, we demonstrate multiple recycling of the resist-free transfer for the nano-grain MoS₂ film. Using the proposed water-assisted and recyclable transfer, MoS₂/p-doped Si wafer photodiode was fabricated, and the opto-electric properties of the photodiode were characterized to demonstrate the feasibility of the proposed method.

Tuning Electrical Conductance in Bilayer MoS2 through Defect-Mediated Interlayer Chemical Bonding

Interlayer interaction could substantially affect the electrical transport in transition metal dichalcogenides, serving as an effective way to control the device performance. However, it is still challenging to utilize interlayer interaction in weakly interlayer-coupled materials such as pristine MoS₂ to realize layer-dependent tunable transport behavior. Here, we demonstrate that, by substitutional doping of vanadium atoms in the Mo sites of the MoS₂ lattice, the vanadium-doped monolayer MoS₂ device exhibits an ambipolar field effect characteristic, while its bilayer device demonstrates a heavy p-type field effect feature, in sharp contrast to the pristine monolayer and bilayer MoS₂ devices, both of which show similar n-type electrical transport behaviors. Moreover, the electrical conductance of the doped bilayer MoS₂ device is drastically enhanced with respect to that of the doped monolayer MoS₂ device. Employing first-principle calculations, we reveal that such striking behaviors arise from the presence of electrical transport networks associated with the enhanced interlayer hybridization of S-3p_z orbitals between adjacent layers activated by vanadium dopants in the bilayer MoS₂, which is nevertheless absent in its monolayer counterpart. Our work highlights that the effect of dopant not only is confined in the in-plane electrical transport behavior but also could be used to activate out-of-plane interaction between adjacent layers in tailoring the electrical transport of the bilayer transitional metal dichalcogenides, which may bring different applications in electronic and optoelectronic devices.

Automated Assembly of Wafer-Scale 2D TMD Heterostructures of Arbitrary Layer Orientation and Stacking Sequence Using Water Dissoluble Salt Substrates

We report a novel strategy to assemble wafer-scale two-dimensional (2D) transition metal dichalcogenide (TMD) layers of well-defined components and orientations. We directly grew a variety of 2D TMD layers on "water-dissoluble" single-crystalline salt wafers and precisely delaminated them inside water in a chemically benign manner. This manufacturing strategy enables the automated integration of vertically aligned 2D TMD layers as well as 2D/2D heterolayers of arbitrary stacking orders on exotic substrates insensitive to their kind and shape. Furthermore, the original salt wafers can be recycled for additional growths, confirming high process sustainability and scalability. The generality and versatility of this approach have been demonstrated by developing proof-of-concept "all 2D" devices for diverse yet unconventional applications. This study is believed to shed a light on leveraging opportunities of 2D TMD layers toward achieving large-area mechanically reconfigurable devices of various form factors at the industrially demanded scale.

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties

Doping of bulk silicon and III-V materials has paved the foundation of the current semiconductor industry. Controlled doping of 2D semiconductors, which can also be used to tune their bandgap and type of carrier thus changing their electronic, optical, and catalytic properties, remains challenging. Here the substitutional doping of nonlike element dopant (Mn) at the Mo sites of 2D MoS₂ is reported to tune its electronic and catalytic properties. The key for the successful incorporation of Mn into the MoS₂ lattice stems from the development of a new growth technology called dual-additive chemical vapor deposition. First, the addition of a MnO₂ additive to the MoS₂ growth process reshapes the morphology and increases lateral size of Mn-doped MoS₂ . Second, a NaCl additive helps in promoting the substitutional doping and increases the concentration of Mn dopant to 1.7 at%. Because Mn has more valance electrons than Mo, its doping into MoS₂ shifts the Fermi level toward the conduction band, resulting in improved electrical contact in field effect transistors. Mn doping also increases the hydrogen evolution activity of MoS₂ electrocatalysts. This work provides a growth method for doping nonlike elements into 2D MoS₂ and potentially many other 2D materials to modify their properties.

Applications of 2D MXenes in energy conversion and storage systems

This article provides a comprehensive review of MXene materials and their energy-related applications.