Doping controlled pyro-phototronic effect in self-powered zinc oxide photodetector for enhancement of photoresponse

Self-powered photodetectors: a device engineering perspective

Nanoscale self-powered photodetectors that can work without any external source of energy are required for future applications. There is potential demand for these devices in areas like wireless surveillance, weather forecasting, remote monitoring, and places where the availability of power is scarce. This study provides an overview of state of the art research trends and improvements in self-powered photodetectors. A device engineering perspective for improvement in the figures of merit has been presented along with a description of additional effects like pyro-phototronic, piezo-phototronic, and surface plasmonics.

Disentangling the Role of the SnO Layer on the Pyro-Phototronic Effect in ZnO-Based Self-Powered Photodetectors

Self-powered photodetectors (PDs) have been recognized as one of the developing trends of next-generation optoelectronic devices. Herein, it is shown that by introducing a thin layer of SnO film between the Si substrate and the ZnO film, the self-powered photodetector Al/Si/SnO/ZnO/ITO exhibits a stable and uniform violet sensing ability with high photoresponsivity and fast response. The SnO layer introduces a built-in electrostatic field to highly enhance the photocurrent by over 1000%. By analyzing energy diagrams of the p-n junction, the underlying physical mechanism of the self-powered violet PDs is carefully illustrated. A high photo-responsivity (R) of 93 mA W-1 accompanied by a detectivity (D*) of 3.1 × 1010 Jones are observed under self-driven conditions, when the device is exposed to 405 nm excitation laser wavelength, with a laser power density of 36 mW cm-2 and at a chopper frequency of 400 Hz. The Si/SnO/ZnO/ITO device shows an enhancement of 3067% in responsivity when compared to the Al/Si/ZnO/ITO. The photodetector holds an ultra-fast response of ≈ 2 µs, which is among the best self-powered photodetectors reported in the literature based on ZnO.

Pyro-Phototronic Effect for Advanced Photodetectors and Novel Light Energy Harvesting

Pyroelectricity was discovered long ago and utilized to convert thermal energy that is tiny and usually wasted in daily life into useful electrical energy. The combination of pyroelectricity and optoelectronic yields a novel research field named as Pyro-Phototronic, where light-induced temperature variation of the pyroelectric material produces pyroelectric polarization charges at the interfaces of semiconductor optoelectronic devices, capable of modulating the device performances. In recent years, the pyro-phototronic effect has been vastly adopted and presents huge potential applications in functional optoelectronic devices. Here, we first introduce the basic concept and working mechanism of the pyro-phototronic effect and next summarize the recent progress of the pyro-phototronic effect in advanced photodetectors and light energy harvesting based on diverse materials with different dimensions. The coupling between the pyro-phototronic effect and the piezo-phototronic effect has also been reviewed. This review provides a comprehensive and conceptual summary of the pyro-phototronic effect and perspectives for pyro-phototronic-effect-based potential applications.

Porous Carbon Coated on Cadmium Sulfide-Decorated Zinc Oxide Nanorod Photocathodes for Photo-accelerated Zinc Ion Capacitors

The development of devices with dual solar energy-harvesting and storage functionalities has recently gained significant traction for off-grid power supply. In their most compact embodiment, these devices rely on the same electrode to harvest and store energy; however, in this approach, the development of energy-efficient photoelectrodes with intrinsic characteristics of good optical and electrochemical activities remains challenging. Here, we propose photoelectrodes with a porous carbon coated on a zinc oxide-cadmium sulfide heterostructure as an energy-efficient photocathode for photo-accelerated zinc ion capacitors (Photo-ZICs). The Photo-ZICs harvest light energy and store charge simultaneously, resulting in efficient charge storage performance under illumination compared to dark conditions (∼99% capacity enhancement at 500 mA g^-1 under illumination compared to dark conditions). The light absorption ability and charge separation efficiency achieved by the photocathodes meet the requirements for photo-ZIC applications. Moreover, Photo-ZICs display stable charge storage capacities over long-term cycling, that is, ∼1% capacity loss after 10,000 cycles.

Channel Scaling Dependent Photoresponse of Copper-Based Flexible Photodetectors Fabricated Using Laser-Induced Oxidation

Copper (Cu) oxide compounds (Cu_xO), which include cupric (CuO) and cuprous (Cu₂O) oxide, have been recognized as a promising p-channel material with useful photovoltaic properties and superior thermal conductivity. Typically, deposition methods or thermal oxidation can be used to obtain Cu_xO. However, these processes are difficult to apply to flexible substrates because plastics have a comparatively low glass transition temperature. Also, additional patterning steps are needed to fabricate applications. In this work, we fabricated a metal-semiconductor-metal photodetector using laser-induced oxidation of thin Cu films under ambient conditions. Raman spectroscopy, scanning electron microscopy-energy-dispersive X-ray spectroscopy, and atomic force microscopy were used to study the composition and morphology of our devices. Moreover, the photoresponse of this device is reported herein. We performed an in-depth analysis of the relationship between the channel size and number of carriers using scanning photocurrent microscopy. The carrier transport behaviors were identified; the photocurrent decreased as the length and width of the channel increased. Furthermore, we verified the suitability of the device as a flexible photodetector using a variety of bending tests. Our in-depth analysis of this Cu-based flexible photodetector could play an important role in understanding the mechanisms of other flexible photovoltaic applications.

Fast-Response Metal-Semiconductor-Metal Junction Ultraviolet Photodetector Based on ZnS:Mn Nanorod Networks via a Cost-Effective Method

In this work, Mn2+-doped ZnS nanorods were synthesized by a facile hydrothermal method. The morphology, structure, and composition of the as-prepared samples were investigated. The temperature-dependent photoluminescence of ZnS:Mn nanorods was analyzed, and the corresponding activation energies were calculated by using a simple two-step rate equation. Mn2+-related orange emission (4T1 → 6A1) demonstrates high stability and is comparatively less affected by the temperature variations than the defect-related emission. A metal-semiconductor-metal junction ultraviolet photodetector based on the nanorod networks has been fabricated by a cost-effective method. The device exhibits visible blindness, superior ultraviolet photodetection with a responsivity of 1.62 A/W, and significantly fast photodetection response with the rise and decay times of 12 and 25 ms, respectively.

Sensing of ultraviolet light: a transition from conventional to self-powered photodetector

Clouds in the sky pass almost 80% of ultraviolet (UV) radiation to the earth's surface, which has a significant impact on humankind. Conventional UV photodetectors (PDs) require an external battery, which not only increases the device size but also has a limited life span and maintenance costs can be prohibitively expensive. An alternative and more technically-sound solution would be the use of self-powered UV PDs that can operate independently, eliminating the need for an external source. Although many exciting studies have been done and state-of-the-art research is underway to successfully fabricate self-powered UV PDs, periodic reviews on this topic are deemed essential so that the technology's readiness can be properly evaluated and critical challenges can be addressed in a timely manner. In this article, the key issues and most exciting developments made in recent years on built-in electric field assisted self-powered UV PDs based on p-n homojunctions, p-n heterojunctions, and Schottky junctions followed by energy harvester integrated UV PDs are extensively reviewed. Finally, a summary and comparison of different types of self-powered UV PDs as well as future challenges that need to be addressed are discussed. This review sets a foundation providing essential insights into the present status of self-powered UV PDs with which researchers can engage and deal with the major challenges.

Self-powered broadband photodetector based on a solution-processed p-NiO/n-CdS:Al heterojunction

Solution-processed photodetectors have emerged as the next generation of sensing technology owing to their ease of integration with electron devices and of tuning photodetector performance. Currently, novel self-powered photodetectors without an external power source, for use in sensing, imaging and communication, are in high demand. Herein, we successfully developed a self-powered photodetector based on a novel solution-processed p-NiO/n-CdS:Al heterojunction, which shows an excellent current rectification characteristic ratio of up to three orders in the dark and distinctive photovoltaic behavior under light illumination. The complete solution synthesis route followed the development of CdS:Al thin films on ITO substrates by chemical bath deposition and NiO thin films by the sol-gel route. Optical absorption data revealed that NiO is more active in the UV region and CdS:Al has a majority of absorption in the visible region; so, upon light illumination, the effective separation of photogenerated carriers produces fast photodetection in the UV-visible region. The photoresponsivity values of the fabricated device were calculated to be 55 mA W^-1 and 30 mA W^-1 for UV and visible illumination, respectively. Also, the device has a fast rise and decay photoresponse speed at zero bias voltage, due to the self-driven photovoltaic effect which makes this heterojunction a self-powered device. This complete solution and new method of fabrication make it possible to combine different materials and flexible substrates, enhancing its potential applications in photodetectors, optoelectronic devices and sensors.

Multieffect Coupled Nanogenerators

With the advent of diverse electronics, the available energy may be light, thermal, and mechanical energies. Multieffect coupled nanogenerators (NGs) exhibit strong ability to harvest ambient energy by integrating various effects comprising piezoelectricity, pyroelectricity, thermoelectricity, optoelectricity, and triboelectricity into a standalone device. Interaction of multitype effects can promote energy harvesting and conversion by modulating charge carriers' behaviour. Multieffect coupled NGs stand for a vital group of energy harvesters, supporting the advances of an electronic device and promoting the resolution of energy crisis. The matchless versatility and high reliability of multieffect coupled NGs make them main candidates for integration in complicated arrays of the electronic device. Multieffect coupled NGs can also be employed as a variety of self-powered sensors due to their rapid response, high accuracy, and high responsivity. This article reviews the latest achievements of multieffect coupled NGs. Fundamentals mainly including basic theory and materials of interest are covered. Advanced device design and output characteristics are introduced. Potential applications are described, and future development is discussed.

Growth of Carbon Dot-Decorated ZnO Nanorods on a Graphite-Coated Paper Substrate to Fabricate a Flexible and Self-Powered Schottky Diode for UV Detection

The fabrication of flexible as well as self-powered optoelectronic devices is a growing and challenging area of research. Some scientists have reported the fabrication of either flexible or self-powered photodetectors recently. However, most of the literature studies fail to report the fabrication of self-powered as well as flexible photodetectors. This study reports the fabrication of self-powered, carbon dot (CD)-enhanced, flexible ZnO/graphite heterojunction-based UV detector where cellulose paper has been used as the substrate. A detailed study on the crystallinity and the defects of the ZnO nanorods has been done with appropriate characterizations. The CD-enhanced ZnO/graphite heterojunction showed Schottky characteristics. The Schottky parameters such as the barrier height, ideality factor, and the series resistance have also been calculated using the Cheung-Cheung method. The observed values of barrier height, ideality factor, and the series resistance are 0.74 eV, 3.74, and 503 kΩ, respectively. The transient response at self-powered condition has been demonstrated. The response time and the recovery time at self-powered condition have also been calculated with the help of the transient response, and those values are ∼2 and ∼3.2 s, respectively. The responsivity and the specific detectivity of the fabricated UV detector have been calculated as 9.57 mA/W and 4.27×10⁸ Jones, respectively, at 330 nm wavelength, which is quite comparable with literature-reported values, considering a self-powered photodetector.

Plasmon-induced Ag decorated CeO2 nanorod array for photodetector application

In this work, glancing angle deposition (GLAD) has been used to grow Ag decorated CeO₂ nanorod (NR) array on n-type Si substrate. The length of the NRs obtained was ∼235 nm and the size of the Ag NPs varied from 13 to 41 nm. The polycrystalline and crystalline nature of CeO₂ and Ag respectively was revealed via selected area electron diffraction (SAED) analysis as well as x-ray diffraction (XRD) pattern. Optical absorption measurement depicts a distinct broad peak around 413 nm that is ascribed to the localized surface plasmon resonance (LSPR) effect of Ag NPs. The Ag decorated CeO₂ NR device exhibited a turn on voltage at ∼3.2 V under dark, which then reduced to ∼1.3 V under 35 min illumination along with the increase in device current from 2.8 to 24.5 μA cm^-2 (4 V) on continuous exposure to light. Under white light illumination, a responsivity of 4.51 A W^-1 was obtained at 370 nm along with the detectivity and noise equivalent power (NEP) values of 4.15 × 10¹² jones and 0.01 pW respectively. Additionally, a fast response characteristic with rise and fall times of 74 ms and 42 ms respectively was demonstrated. Thus, these findings manifest the underlying LSPR mechanism at work in Ag/CeO₂ heterojunction and reveal its high potential in UV photodetector application.

Novel Self-Powered Photodetector with Binary Photoswitching Based on SnSx/TiO2 Heterojunctions

Binary photoresponse characteristics can help realize optical signal processing and logic operations. UV photodetectors (PDs) with SnS_x nanoflakes and TiO₂ nanorod arrays (NRs) show a novel binary photoswitching behavior (change in current from positive to negative) by manipulating the light wavelength without an external power source, utilizing the interfacial recombination of the photogenerated carriers in the type-I SnS_x/TiO₂ heterojunctions. The enhanced responsivity (R*), detectivity (D^*), and fast photoresponse time for self-powered SnS_x/TiO₂PDs can be achieved by adjusting the phase ratio of SnS and SnS₂ nanoflakes. The binary photoswitching in the self-powered UV PDs can be applied in the encrypted optical signal processing and imaging in some special conditions without external bias.

High sensitivity ultraviolet detection based on three-dimensional graphene field effect transistors decorated with TiO2 NPs

A three-dimensional (3D) ultraviolet (UV) photodetector was fabricated by decorating a tubular graphene field-effect transistor (GFET) with titanium dioxide (TiO2) nanoparticles (NPs). The unique tubular architecture not only provides a natural 3D optical resonant microcavity to enhance the optical field inside it, but also increases the light-matter interaction area. Strong UV absorption in the TiO2 NPs creates a number of electron-hole pairs, where the electrons are transferred to graphene, while the holes are trapped within the TiO2 NPs, leading to a strong photogating effect on the graphene channel conductance. The photoresponsivity of our 3D GFET photodetector decorated with TiO2 NPs was demonstrated up to 475.5 A W-1 at 325 nm, which is about 2 orders of magnitude higher than that of a 3D GFET photodetector without the TiO2 NP decoration (1 A W-1), and over 3 orders of magnitude higher than that of a recently reported UV photodetector based on the graphene/vertical Ga2O3 nanowire array heterojunction (0.185 A W-1). Moreover, the photoresponsivity and photoresponse speed of the device can be easily tuned by applying a small gate bias (≤3 V) and/or changing the source-drain bias. These results indicate that the photoresponsivities of graphene-based photodetectors can be significantly improved by exploiting 3D graphene structures and integrating graphene with semiconducting light harvesters simultaneously.

Zinc oxide ultraviolet photodetectors: rapid progress from conventional to self-powered photodetectors

Currently, the development of ultraviolet (UV) photodetectors (PDs) has attracted the attention of the research community because of the vast range of applications of photodetectors in modern society. A variety of wide-band gap nanomaterials have been utilized for UV detection to achieve higher photosensitivity. Specifically, zinc oxide (ZnO) nanomaterials have attracted significant attention primarily due to their additional properties such as piezo-phototronic and pyro-phototronic effects, which allow the fabrication of high-performance and low power consumption-based UV PDs. This article primarily focuses on the recent development of ZnO nanostructure-based UV PDs ranging from nanomaterials to architectural device design. A brief overview of the photoresponse characteristics of UV PDs and potential ZnO nanostructures is presented. Moreover, the recent development in self-powered PDs and implementation of the piezo-phototronic effect, plasmonic effect and pyro-phototronic effect for performance enhancement is highlighted. Finally, the research perspectives and future research direction related to ZnO nanostructures for next-generation UV PDs are summarized.

High-performing ultrafast transparent photodetector governed by the pyro-phototronic effect

In this work we utilized the advantage of the photo-induced pyroelectric effect - known as "Pyro-phototronic" - to design a self-powered, ultrafast, transparent ultraviolet (UV, 365 nm) photodetector. The device architecture contains an UV absorbing pyroelectric ZnO layer sandwiched between hole-selective V2O5 and a bottom ITO electrode. In addition, the device shows a high optical transmittance, >70%, in the entire visible region. The photo current of the device was enhanced from 19 to 42 μA under pulsed UV light illumination (λ = 365 nm, 4 mW cm-2) by exploiting the pyro-phototronic potential. In addition, the photodetector demonstrated ultrafast responses of ∼4 μs for the rise time and ∼16 μs for the fall time. Further, a high photoresponsivity of ∼36.34 mA W-1 and excellent photodetectivity of ∼6.04 × 1014 Jones, with an enhancement of 725% in both due to the pyroelectric potential, were measured. This novel approach will open a new path to design transparent and ultrafast devices, as well as on the flexible substrates, for future optoelectronic applications.