Multiscale Model of CVD Growth of Graphene on Cu(111) Surface

Due to its outstanding properties, graphene has emerged as one of the most promising 2D materials in a large variety of research fields. Among the available fabrication protocols, chemical vapor deposition (CVD) enables the production of high quality single-layered large area graphene. To better understand the kinetics of CVD graphene growth, multiscale modeling approaches are sought after. Although a variety of models have been developed to study the growth mechanism, prior studies are either limited to very small systems, are forced to simplify the model to eliminate the fast process, or they simplify reactions. While it is possible to rationalize these approximations, it is important to note that they have non-trivial consequences on the overall growth of graphene. Therefore, a comprehensive understanding of the kinetics of graphene growth in CVD remains a challenge. Here, we introduce a kinetic Monte Carlo protocol that permits, for the first time, the representation of relevant reactions on the atomic scale, without additional approximations, while still reaching very long time and length scales of the simulation of graphene growth. The quantum-mechanics-based multiscale model, which links kinetic Monte Carlo growth processes with the rates of occurring chemical reactions, calculated from first principles makes it possible to investigate the contributions of the most important species in graphene growth. It permits the proper investigation of the role of carbon and its dimer in the growth process, thus indicating the carbon dimer to be the dominant species. The consideration of hydrogenation and dehydrogenation reactions enables us to correlate the quality of the material grown within the CVD control parameters and to demonstrate an important role of these reactions in the quality of the grown graphene in terms of its surface roughness, hydrogenation sites, and vacancy defects. The model developed is capable of providing additional insights to control the graphene growth mechanism on Cu(111), which may guide further experimental and theoretical developments.

Oxygenated Hydrocarbons from Catalytic Hydrogenation of Carbon Dioxide

Once fundamental difficulties such as active sites and selectivity are fully resolved, metal-free catalysts such as 3D graphene or carbon nanotubes (CNT) are very cost-effective substitutes for the expensive noble metals used for catalyzing CO2. A viable method for converting environmental wastes into useful energy storage or industrial wealth, and one which also addresses the environmental and energy problems brought on by emissions of CO2, is CO2 hydrogenation into hydrocarbon compounds. The creation of catalytic compounds and knowledge about the reaction mechanisms have received considerable attention. Numerous variables affect the catalytic process, including metal–support interaction, metal particle sizes, and promoters. CO2 hydrogenation into different hydrocarbon compounds like lower olefins, alcoholic composites, long-chain hydrocarbon composites, and fuels, in addition to other categories, have been explained in previous studies. With respect to catalyst design, photocatalytic activity, and the reaction mechanism, recent advances in obtaining oxygenated hydrocarbons from CO2 processing have been made both through experiments and through density functional theory (DFT) simulations. This review highlights the progress made in the use of three-dimensional (3D) nanomaterials and their compounds and methods for their synthesis in the process of hydrogenation of CO2. Recent advances in catalytic performance and the conversion mechanism for CO2 hydrogenation into hydrocarbons that have been made using both experiments and DFT simulations are also discussed. The development of 3D nanomaterials and metal catalysts supported on 3D nanomaterials is important for CO2 conversion because of their stability and the ability to continuously support the catalytic processes, in addition to the ability to reduce CO2 directly and hydrogenate it into oxygenated hydrocarbons.

Application of 2D Materials for Adsorptive Removal of Air Pollutants

Air pollution is on the priority list of global safety issues, with the concern of fatal environmental and public health deterioration. 2D materials are potential adsorbent materials for environmental decontamination, owing to their high surface area, manageable interlayer binding, large surface-to-volume ratio, specific binding capability, and chemical, thermal, and mechanistic stability. Specifically, graphene oxide and reduced graphene oxide have been attracting attention, taking advantage of their low cost synthesis, excessive oxygen containing surface functionalities, and intrinsic aqueous dispersibility, making them desirable for the development of cost-effective, high performance air filters. Many different material designs have been proposed to expand their filtration capability, including the functionalization and integration with other metals and metal oxides, which act not only as binding agents to the target pollutants but also as antimicrobial agents. This review highlights the advantages and drawbacks of 2D materials for air filtration and summarizes the interrelationships among various strategies and the resultant filtration performance in terms of structural engineering, morphology control, and material compositions. Finally, potential future directions are suggested toward the idealized designs of 2D material based air filters.

Synthesis of holey graphene for advanced nanotechnological applications

Holey or porous graphene, a structural derivative of graphene, has attracted immense attention due to its unique properties and potential applications in different branches of science and technology. In this review, the synthesis methods of holey or porous graphene/graphene oxide are systematically summarized and their potential applications in different areas are discussed. The process–structure–applications are explained, which helps relate the synthesis approaches to their corresponding key applications. The review paper is anticipated to benefit the readers in understanding the different synthesis methods of holey graphene, their key parameters to control the pore size distribution, advantages and limitations, and their potential applications in various fields.

The review paper presents a systematic understanding of different synthesis routes to obtain holey graphene, its properties, and key applications in different fields. The article also evaluates the current progress and future opportunities of HG.

Can a Procedure for the Growth of Single-layer Graphene on Copper be used in Different Chemical Vapor Deposition Reactors?

In the last decade, catalytic chemical vapor deposition (CVD) has been intensively explored for the growth of single-layer graphene (SLG). Despite the scattering of guidelines and procedures, variables such as the surface texture/chemistry of catalyst metal foils, carbon feedstock, and growth process parameters have been well-scrutinized. Still, questions remain on how best to standardize the growth procedure. The possible correlation of procedures between different CVD setups is an example. Here, two thermal CVD reactors were explored to grow graphene on Cu foil. The design of these setups was entirely distinct, one being a "showerhead" cold-wall type, whereas the other represented the popular "tubular" hot-wall type. Upon standardizing the Cu foil surface, it was possible to develop a procedure for cm² -scale SLG growth that differed only by the carrier gas flow rate used in the two reactors.

Graphene Coating Obtained in a Cold-Wall CVD Process on the Co-Cr Alloy (L-605) for Medical Applications

Graphene coating on the cobalt-chromium alloy was optimized and successfully carried out by a cold-wall chemical vapor deposition (CW-CVD) method. A uniform layer of graphene for a large area of the Co-Cr alloy (discs of 10 mm diameter) was confirmed by Raman mapping coated area and analyzing specific G and 2D bands; in particular, the intensity ratio and the number of layers were calculated. The effect of the CW-CVD process on the microstructure and the morphology of the Co-Cr surface was investigated by scanning X-ray photoelectron microscope (SPEM), atomic force microscopy (AFM), scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDS). Nanoindentation and scratch tests were performed to determine mechanical properties of Co-Cr disks. The results of microbiological tests indicate that the studied Co-Cr alloys covered with a graphene layer did not show a pro-coagulant effect. The obtained results confirm the possibility of using the developed coating method in medical applications, in particular in the field of cardiovascular diseases.

Superclean Growth of Graphene Using a Cold-Wall Chemical Vapor Deposition Approach

Chemical vapor deposition (CVD) has become a promising approach for the industrial production of graphene films with appealing controllability and uniformity. However, in the conventional hot-wall CVD system, CVD-derived graphene films suffer from surface contamination originating from the gas-phase reaction during the high-temperature growth. Shown here is that the cold-wall CVD system is capable of suppressing the gas-phase reaction, and achieves the superclean growth of graphene films in a controllable manner. The as-received superclean graphene film, exhibiting improved optical and electrical properties, was proven to be an ideal candidate material used as transparent electrodes and substrate for epitaxial growth. This study provides a new promising choice for industrial production of high-quality graphene films, and the finding about the engineering of the gas-phase reaction, which is usually overlooked, will be instructive for future research on CVD growth of graphene.

Chemical Vapour Deposition of Graphene-Synthesis, Characterisation, and Applications: A Review

Graphene as the 2D material with extraordinary properties has attracted the interest of research communities to master the synthesis of this remarkable material at a large scale without sacrificing the quality. Although Top-Down and Bottom-Up approaches produce graphene of different quality, chemical vapour deposition (CVD) stands as the most promising technique. This review details the leading CVD methods for graphene growth, including hot-wall, cold-wall and plasma-enhanced CVD. The role of process conditions and growth substrates on the nucleation and growth of graphene film are thoroughly discussed. The essential characterisation techniques in the study of CVD-grown graphene are reported, highlighting the characteristics of a sample which can be extracted from those techniques. This review also offers a brief overview of the applications to which CVD-grown graphene is well-suited, drawing particular attention to its potential in the sectors of energy and electronic devices.

Kinetics of Graphene and 2D Materials Growth

During the last 10 years, remarkable achievements on the chemical vapor deposition (CVD) growth of 2D materials have been made, but the understanding of the underlying mechanisms is still relatively limited. Here, the current progress on the understanding of the growth kinetics of 2D materials, especially for their CVD synthesis, is reviewed. In order to present a complete picture of 2D materials' growth kinetics, the following factors are discussed: i) two types of growth modes, namely attachment-limited growth and diffusion-limited growth; ii) the etching of 2D materials, which offers an additional degree of freedom for growth control; iii) a number of experimental factors in graphene CVD synthesis, such as structure of the substrate, pressure of hydrogen or oxygen, temperature, etc., which are found to have profound effects on the growth kinetics; iv) double-layer and few-layer 2D materials' growth, which has distinct features different from the growth of single-layer 2D materials; and v) the growth of polycrystalline 2D materials by the coalescence of a few single crystalline domains. Finally, the current challenges and opportunities in future 2D materials' synthesis are summarized.

Interface engineering of graphene–silicon Schottky junction solar cells with an Al2O3 interfacial layer grown by atomic layer deposition

The recent progress in graphene (Gr)/silicon (Si) Schottky barrier solar cells (SBSC) has shown the potential to produce low cost and high efficiency solar cells. Among the different approaches to improve the performance of Gr/Si SBSC is engineering the interface with an interfacial layer to reduce the high recombination at the graphene (Gr)/silicon (Si) interface and facilitate the transport of photo-generated carriers. Herein, we demonstrate improved performance of Gr/Si SBSC by engineering the interface with an aluminum oxide (Al₂O₃) layer grown by atomic layer deposition (ALD). With the introduction of an Al₂O₃ interfacial layer, the Schottky barrier height is increased from 0.843 V to 0.912 V which contributed to an increase in the open circuit voltage from 0.45 V to 0.48 V. The power conversion efficiency improved from 7.2% to 8.7% with the Al₂O₃ interfacial layer. The stability of the Gr/Al₂O₃/Si devices was further investigated and the results have shown a stable performance after four weeks of operation. The findings of this work underpin the potential of using an Al₂O₃ interfacial layer to enhance the performance and stability of Gr/Si SBSC.

One approach to improve Gr/Si SBSC performance is engineering the interface with an interfacial layer. We demonstrate the improved performance of Gr/Si SBSC upon engineering the interface with an aluminium oxide (Al₂O₃) layer grown by atomic layer deposition (ALD)..