Defect evolution in ZnO and its effect on radiation tolerance

Dosimetry and defect analysis of aluminum-doped zinc oxide after irradiation with 90Sr/90Y

This study aims to perform dosimetry and defect analysis of different Al concentrations in AZO after being irradiated for 91 days using ⁹⁰Sr/⁹⁰Y. Particle interaction was also simulated using MCNPX to confirm the effect of Al addition on the radiation dose received. AZO films were prepared using the sol-gel spin coating method with Al concentrations ranging from 0 wt%, 3 wt%, 6 wt%, and 9 wt%, while the structure was characterized with XRD and FTIR. The beta dose received for 91 days was calculated by direct measurement using a gamma survey meter and simulation by MCNPX, both culminating in the order of 10² Gy. The results showed that the damage to AZO crystallization increased with rising Al concentrations. Moreover, the deposited energy received by AZO increased with increasing concentrations of Al. The 9 wt% Al concentration caused the most significant damage to AZO crystallization compared to lower concentrations.

Drastic evolution of point defects in vertically grown ZnO nanorods induced by lithium ion implantation

The evolution of various point defects in 100 keV lithium (Li) ion-implanted ZnO nanorods (NRs) by varying the fluences from 1 × 10¹⁴ to 7 × 10¹⁵ ions per cm² has been investigated experimentally and using a simulation by stopping and range of ions in matter (SRIM). The X-ray photoelectron spectroscopy results indicate that the Li¹⁺ ions have been incorporated at Zn²⁺ sites, which forms Li_Zn acceptors in the implanted NRs. The structural disorder and the number of oxygen vacancies in the implanted ZnO NRs increase drastically with an increase in the Li fluence as indicated by the X-ray diffractometry and Raman scattering analyses. Both the formation of acceptors and implantation-induced defects make the Li-implanted NRs electrically highly resistive. The yellow-orange photoluminescence (PL) emission of the as-grown ZnO NRs has evolved into green emission in the implanted NRs. A suppression of the green PL at higher fluences is possibly due to an apparent decrease in the zinc vacancy concentration. The SRIM results explain the quantitative energy loss, the distributions of the implanted Li ions and the point defects along the target ZnO NRs. The consistency between the experimental and theoretical simulations validates our analyses on the formation and evolution of various point defects in highly resistive Li-implanted ZnO NRs.

Ga-Doped ZnO Nanostructured Powder for Cool-Nanopigment in Environment Applications

Gallium (Ga) doped zinc oxide (ZnO) nanocrystals were successfully synthesized via a γ-radiation-assisted polymer-pyrolysis route. Ga doped ZnO samples with Ga and ZnO precursor salts with molar ratios of 0%, 3%, 5%, and 10% were produced. A γ-radiation dosage of 1.5 kGy was used for polymerization initiation during the sample preparation. The properties of the obtained nanocrystal samples were characterized using X-ray diffraction (XRD), Fourier transform infrared (FTIR), UV-visible absorption, NIR-VIS-UV diffused reflectance, and high-resolution transmission electron microscopy (HR-TEM) characterization techniques. XRD results revealed the formation of ZnO nanocrystals with wurtzite structure for both Ga-doped and undoped ZnO samples. Noticeable increasing in the line broadening of the XRD peaks as well as pronounced decreasing of crystallite size were observed with the increasing Ga ratio in the samples. Optical peaks around Ga:ZnO samples showed a blueshift in the optical absorption peaks with increasing Ga content. These results are in good agreement with the dependency of crystallites size as well as grain size on Ga ratio obtained from XRD and TEM images, which make them fit well for the powder cool-pigment applications. The doped samples showed high values of NIR reflectance (RNIR*) with percentage varied from 84.25% to 89.05% that enabled them to qualify for cool-nanopigment applications. Furthermore, such doped samples registered low values of visible reflectance (RVIS*) that enabled to reduce the glare from the reflected visible sunlight.

Photoluminescence of ZnO Nanowires: A Review

One-dimensional ZnO nanostructures (nanowires/nanorods) are attractive materials for applications such as gas sensors, biosensors, solar cells, and photocatalysts. This is due to the relatively easy production process of these kinds of nanostructures with excellent charge carrier transport properties and high crystalline quality. In this work, we review the photoluminescence (PL) properties of single and collective ZnO nanowires and nanorods. As different growth techniques were obtained for the presented samples, a brief review of two popular growth methods, vapor-liquid-solid (VLS) and hydrothermal, is shown. Then, a discussion of the emission process and characteristics of the near-band edge excitonic emission (NBE) and deep-level emission (DLE) bands is presented. Their respective contribution to the total emission of the nanostructure is discussed using the spatial information distribution obtained by scanning transmission electron microscopy−cathodoluminescence (STEM-CL) measurements. Also, the influence of surface effects on the photoluminescence of ZnO nanowires, as well as the temperature dependence, is briefly discussed for both ultraviolet and visible emissions. Finally, we present a discussion of the size reduction effects of the two main photoluminescent bands of ZnO. For a wide emission (near ultra-violet and visible), which has sometimes been attributed to different origins, we present a summary of the different native point defects or trap centers in ZnO as a cause for the different deep-level emission bands.

Optical signatures of single ion tracks in ZnO

The optical properties of single ion tracks have been studied in ZnO implanted with Ge by combining depth-resolved hyperspectral cathodoluminescence (CL) and photoluminescence (PL) spectroscopy techniques. The results indicate that ZnO is susceptible to implantation doses as low as 10⁸ to 10⁹ cm^-2. We demonstrate that the intensity ratio of ionized and neutral donor bound exciton emissions [D⁺X/D⁰X] can be used as a tracer for a local band bending both at the surface as well as in the crystal bulk along the ion tracks. The hyperspectral CL imaging performed at 80 K with 50 nm resolution over the regions with single ion tracks permitted direct assessment of the minority carrier diffusion length. The radii of distortion and space charge surrounding single ion tracks were estimated from the 2D distributions of defect-related green emission (GE) and excitonic D⁺X emission, both normalized with regard to neutral D⁰X emission, i.e., from the [GE/D⁰X] and [D⁺X/D⁰X] ratio maps. Our results indicate that single ion tracks in ZnO can be resolved up to ion doses of the order of 5 × 10⁹ cm^-2, in which defect aggregation along the extended defects obstructs signatures of individual tracks.

ProbPFP: a multiple sequence alignment algorithm combining hidden Markov model optimized by particle swarm optimization with partition function

BACKGROUND

During procedures for conducting multiple sequence alignment, that is so essential to use the substitution score of pairwise alignment. To compute adaptive scores for alignment, researchers usually use Hidden Markov Model or probabilistic consistency methods such as partition function. Recent studies show that optimizing the parameters for hidden Markov model, as well as integrating hidden Markov model with partition function can raise the accuracy of alignment. The combination of partition function and optimized HMM, which could further improve the alignment's accuracy, however, was ignored by these researches.

RESULTS

A novel algorithm for MSA called ProbPFP is presented in this paper. It intergrate optimized HMM by particle swarm with partition function. The algorithm of PSO was applied to optimize HMM's parameters. After that, the posterior probability obtained by the HMM was combined with the one obtained by partition function, and thus to calculate an integrated substitution score for alignment. In order to evaluate the effectiveness of ProbPFP, we compared it with 13 outstanding or classic MSA methods. The results demonstrate that the alignments obtained by ProbPFP got the maximum mean TC scores and mean SP scores on these two benchmark datasets: SABmark and OXBench, and it got the second highest mean TC scores and mean SP scores on the benchmark dataset BAliBASE. ProbPFP is also compared with 4 other outstanding methods, by reconstructing the phylogenetic trees for six protein families extracted from the database TreeFam, based on the alignments obtained by these 5 methods. The result indicates that the reference trees are closer to the phylogenetic trees reconstructed from the alignments obtained by ProbPFP than the other methods.

CONCLUSIONS

We propose a new multiple sequence alignment method combining optimized HMM and partition function in this paper. The performance validates this method could make a great improvement of the alignment's accuracy.