Experimental and theoretical 2p core-level spectra of size-selected gas-phase aluminum and silicon cluster cations: chemical shifts, geometric structure, and coordination-dependent screening

Extended X-ray Absorption Fine Structure (EXAFS) Measurements on Alkali Metal Superatoms of Ta-Atom-Encapsulated Si16 Cage

The silicon cage nanoclusters encapsulating a tantalum atom, termed Ta@Si16, exhibit characteristics of alkali metal "superatoms (SAs)". Despite this conceptual framework, the precise structures of Ta@Si16 and Ta@Si16+ remain unclear in quantum calculations due to three energetically close structural isomers: C3v, Td, and D4d structures. To identify the geometrical structure of Ta@Si16 SAs, structural analysis was conducted using extended X-ray absorption fine structure (EXAFS) with a high-intensity monochromatic X-ray source, keeping anaerobic conditions. Focusing on "superordered" films, which constitute amorphous thin films composed solely of Ta@Si16 SAs, this analysis preserved locally ordered structures. Spectral comparisons between experimental and simulated Ta L3-edge EXAFS unveil that Ta@Si16 SAs on a substrate adopt a C3v-derived structure, while Si K-edge EXAFS introduces spectral ambiguity in structural identifications, attributed to both intracluster and intercluster scatterings. These findings underscore the significance of locally ordered structure analyses in understanding and characterizing novel nanoscale materials.

Dielectric Behavior and Prolate Growth Patterns of Silicon Clusters SiN with N = 12-30 by Cryogenic Electric Beam Deflection

We present a comprehensive investigation of the dielectric behavior and geometric structures of cold neutral SiN clusters of intermediate size with N = 12-30 atoms. For this, cryogenic electric beam deflection experiments were carried out for the first time for Si clusters at nozzle temperatures below 30 K. In combination with quantum chemical calculations based on density functional theory and classical trajectory simulations of the rotational dynamics in the electric field, the geometric structures of the clusters are discriminated. Clusters with N < 15 favor a single-capped square antiprism as a nucleus for cluster growth, forming compact geometries in the molecular beam. Starting with 15 atoms, a prolate-like growth is observed. The prolate structures are based on stable building blocks which reappear for numerous sizes throughout the cluster growth. Finally, the transition from prolate to quasi-spherical shapes is shown to take place around Si29/Si30 as predicted theoretically by the literature. The influence of the exchange-correlation functional on the predicted structure and dielectric properties is discussed in detail for some clusters. Relaxation of the electric-dipole moment and therefore quenching of the observed electric response due to vibrational excitation and collisions with the background gas are also considered, which explains deviations between experiment and theory.

Soft X-ray absorption and fragmentation of tin-oxo cage photoresists

"Tin-oxo cage" organometallic compounds are considered as photoresists for extreme ultraviolet (EUV) photolithography. To gain insight into their electronic structure and reactivity to ionizing radiation, we trapped bare gas-phase n-butyltin-oxo cage dications [(BuSn)12O14(OH)6]2+ in an ion trap and investigated their fragmentation upon soft X-ray photoabsorption by means of mass spectrometry. In complementary experiments, the tin-oxo cages with hydroxide and trifluoroacetate counter-anions were cast in thin films and studied using X-ray transmission spectroscopy. Quantum-chemical calculations were used to interpret the observed spectra. At the carbon K-edge, a distinct pre-edge absorption band can be attributed to transitions in which electrons are promoted from C1s orbitals to the lowest unoccupied molecular orbitals, which are delocalized orbitals with strong antibonding (Sn-C σ*) character. At higher energies, the most prominent resonant transitions involve C-C and C-H σ* valence states and Rydberg (3s and 3p) states. In the solid state, the onset of continuum ionization is shifted by ∼5 eV to lower energy with respect to the gas phase, due to the electrostatic effect of the counterions. The O K-edge also shows a pre-edge absorption, but it is devoid of any specific features, because there are many transitions from the different O1s orbitals to a large number of vacant orbitals. In the gas phase, formation of the parent [(BuSn)12O14(OH)6]3+ radical ion is not observed at the C K-edge nor at the O K-edge, because the loss of a butyl group from this species is very efficient. We do observe a number of triply charged photofragment ions, some of which have lost up to 5 butyl groups. Structures of these species are proposed based on quantum-chemical calculations, and pathways of formation are discussed. Our results provide insight into the electronic structure of alkyltin-oxo cages, which is a prerequisite for understanding their response to EUV photons and their performance as EUV photoresists.

Structural Evolution and Electronic Properties of V2Sin-/0 (n = 7-14) Clusters: Anion Photoelectron Spectroscopy and Theoretical Calculations

A systematic study of the structures and electronic properties of V2-doped silicon clusters, V2Sin-/0 (n = 7-14), was carried out by anion photoelectron spectroscopic experiments combined with theoretical calculations. According to the experimental spectra of V2Sin- (n = 7-14) clusters, the V2Si12- cluster has the highest vertical detachment energy (VDE) of 3.66 eV, while V2Si7- and V2Si14- clusters have lower VDEs of 2.81 and 2.84 eV, respectively. The most stable structure searches find that two V atoms in the V2Sin- clusters with size n = 7 and 8 are located at the surface, while V2Sin- clusters with n ≥ 9 prefer cage-like structures. Based on the analysis of the structural evolution of V2Sin- (n = 9-14) clusters, it can be clearly seen how the antihexagonal prism with one V encapsulated in the cage is gradually built from n = 9 to 12 and further developed from n = 12 to 14 with the extra silicon atoms located at the surface of the Si12 cage. The molecular orbital and the atoms in molecule analysis of the V2Sin- (n = 7-14) anions demonstrate that the strong V-V bond and the delocalized interaction between the V2 moiety and the Sin ligand play a significant role in stabilizing the cluster structures. A strong linear correlation has been found between the Wiberg bond order of the V-V bond and the electron density at the V-V bond critical points.

NEXAFS spectra of model sulfide chains: implications for sulfur networks obtained from inverse vulcanization

Inverse vulcanization is a promising route to stabilize sulfur in lithium-sulfur batteries, but the resulting sulfur strand lengths in the materials are elusive. We address the strand length by characterization via sulfur near edge X-ray absorption fine structure (NEXAFS) spectroscopy. Theoretical predictions of NEXAFS spectra for model molecules containing strands with up to three sulfur atoms are verified by experiment. The near perfect agreement between simulation and experiment on the absolute energy scale allows for the predictions for larger chain lengths also. Inspection and interpretation of NEXAFS spectra from real battery materials on this basis reveals the appearance of single connecting sulfur atoms for very low sulfur content, and of longer strands when the sulfur fraction increases.

Wavefunction-based quantum-chemicalab initiocalculations for core electron binding energies of small open shell molecules

Core electron binding energies (CEBEs), i.e. ionization energies of 1s core orbitals, are calculated by means of wavefunction-based quantum-chemicalab initiomethods for a series of small open-shell molecules containing first-row atoms. The calculations are performed in three steps: (a) Koopmans' theorem, where the orbitals of the electronic ground state are used unchanged also for the ions, (b) Hartree-Fock or self consistent field (SCF) approximation in which the orbitals are allowed to relax after 1s ionization (ΔSCF), (c) dynamic correlation effects on top of SCF. For open-shell molecules 1s ionization leads to ions in several spin states, mostly to a pair of a triplet and a singlet state. In several cases one or both of these ionic states are only poorly described by a single-reference SCF wavefunction, therefore a multi-reference complete active space self consistent field (CAS-SCF) wavefunction is used instead. The correlation effects are evaluated by means of our multi-reference coupled electron pair approximation program. The accuracy of the calculated CEBEs is in the order of 0.1-0.4 eV. This is in agreement with experimental results for NO and O₂. But there exist only very few gas phase data for CEBEs of open-shell molecules.

Al13− and B@Al12− superatoms on a molecularly decorated substrate

Aluminum nanoclusters (Al_n NCs), particularly Al₁₃⁻ (n = 13), exhibit superatomic behavior with interplay between electron shell closure and geometrical packing in an anionic state. To fabricate superatom (SA) assemblies, substrates decorated with organic molecules can facilitate the optimization of cluster–surface interactions, because the molecularly local interactions for SAs govern the electronic properties via molecular complexation. In this study, Al_n NCs are soft-landed on organic substrates pre-deposited with n-type fullerene (C₆₀) and p-type hexa-tert-butyl-hexa-peri-hexabenzocoronene (HB-HBC, C₆₆H₆₆), and the electronic states of Al_n are characterized by X-ray photoelectron spectroscopy and chemical oxidative measurements. On the C₆₀ substrate, Al_n is fixed to be cationic but highly oxidative; however, on the HB-HBC substrate, they are stably fixed as anionic Al_n⁻ without any oxidations. The results reveal that the careful selection of organic molecules controls the design of assembled materials containing both Al₁₃⁻ and boron-doped B@Al₁₂⁻ SAs through optimizing the cluster–surface interactions.

Anionic aluminium clusters are promising candidates for the fabrication of superatom-assembled nanomaterials. Here, the authors report enhanced stability for Al₁₃⁻ and boron-doped B@Al₁₂⁻ on a molecularly decorated p-type organic substrate.

X-ray Induced Fragmentation of Protonated Cystine

We demonstrate site-specific X-ray induced fragmentation across the sulfur L-edge of protonated cystine, the dimer of the amino acid cysteine. Ion yield NEXAFS were performed in the gas phase using electrospray ionization (ESI) in combination with an ion trap. The interpretation of the sulfur L-edge NEXAFS spectrum is supported by Restricted Open-Shell Configuration Interaction (ROCIS) calculations. The fragmentation pathway of triply charged cystine ions was modeled by Molecular Dynamics (MD) simulations. We have deduced a possible pathway of fragmentation upon excitation and ionization of S 2p electrons. The disulfide bridge breaks for resonant excitation at lower photon energies but remains intact upon higher energy resonant excitation and upon ionization of S 2p. The larger fragments initially formed subsequently break into smaller fragments.

Appearance of V-encapsulated tetragonal prism motifs in VSi10- and VSi11- clusters

The structural and electronic properties of V-doped silicon clusters, VSi10-/0 and VSi11-/0, were investigated by using mass-selected anion photoelectron spectroscopy in combination with theoretical calculations. Photoelectron spectroscopy of VSi10- and VSi11- clusters with spectral similarity reveals that the two cluster structures resemble each other. Interestingly, theoretical calculation studies provide definitive evidence of the global minima for the two clusters to be V-encapsulated tetragonal prism motifs with extra Si atoms bicapped and tricapped, respectively. The enhanced stability of the tetragonal prism unit in VSi10- and VSi11- is due to the strong interactions between 3d (V) and 3p (Si) orbitals, and more charge transfers from the Sin framework to the encapsulated V atom. The tetragonal prism unit possessed by both the VSi10- and VSi11- clusters is observed for the first time in the current work, and may offer new ideas in developing components for Si-based nanodevices.