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Assad H, Lone IA, Sihmar A, Kumar A, Kumar A. An overview of contemporary developments and the application of graphene-based materials in anticorrosive coatings. ENVIRONMENTAL SCIENCE AND POLLUTION RESEARCH INTERNATIONAL 2023:10.1007/s11356-023-30658-7. [PMID: 37996595 DOI: 10.1007/s11356-023-30658-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Accepted: 10/20/2023] [Indexed: 11/25/2023]
Abstract
Although graphene and graphene-based materials (GBMs) offer a wide range of possible applications, interest in their use as barrier layers or as reinforcements in coatings for the mitigation of corrosion has grown during the past decade. Because of its unique two-dimensional nanostructure and exceptional physicochemical characteristics, graphene has gotten a lot of attention as an anti-corrosion material. This enthusiasm is largely driven by the requirement to integrate more features, improve anti-corrosion effectiveness, and eventually prolong the service duration of metallic components. As barriers against metal corrosion, graphene nanosheets can be applied singly or in combination to create thin films, layered frameworks, or composites. Concurrently, over the past few years, significant advancements have been made in the establishment of scalable production methods for graphene and materials based on graphene. Since there is currently a wide variety of graphene material with various morphologies and characteristics, it is even more important that the production approach and the intended application be properly matched. This review gathers the most recent data and aims to give the reader a comprehensive overview of the most recent developments in the use of graphene and GBMs in various anti-corrosion strategies. The structure-property correlation and anticorrosion techniques in these systems are given special consideration. The current article offers a critical examination of this topic as well, stressing the areas that require more research.
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Affiliation(s)
- Humira Assad
- Department of Chemistry, School of Chemical Engineering and Physical Sciences, Lovely Professional University, Phagwara, Punjab, India
| | - Imtiyaz Ahmed Lone
- Department of Chemistry, National Institute of Technology, Srinagar, 190006, Jammu and Kashmir, India
| | - Ashish Sihmar
- Department of Chemistry, M. D. University, Rohtak, Haryana, 124001, India
| | - Alok Kumar
- Department of Mechanical Engineering, Nalanda College of Engineering, Bihar Engineering University, Science, Technology and Technical Education Department, Government of Bihar, Nalanda, Bihar, 803108, India
| | - Ashish Kumar
- Department of Chemistry, Nalanda College of Engineering, Bihar Engineering University, Science, Technology and Technical Education Department, Government of Bihar, Nalanda, Bihar, 803108, India.
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Situ B, Yan Z, Huo R, Wang K, Chen L, Zhang Z, Zhao L, Tu Y. Locally spontaneous dynamic oxygen migration on biphenylene: a DFT study. Phys Chem Chem Phys 2023; 25:14089-14095. [PMID: 37161756 DOI: 10.1039/d3cp00925d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
The dynamic oxygen migration at the interface of carbon allotropes dominated by the periodic hexagonal rings, including graphene and carbon nanotubes, has opened up a new avenue to realize dynamic covalent materials. However, for the carbon materials with hybrid carbon rings, such as biphenylene, whether the dynamic oxygen migration at its interface can still be found remains unknown. Using both density functional theory calculations and machine-learning-based molecular dynamics (MLMD) simulations, we found that the oxygen migration departing away from the four-membered carbon (C4) ring is hindered, and the oxygen atom prefers to spontaneously migrate toward/around the C4 ring. This locally spontaneous dynamic oxygen migration on the biphenylene is attributed to a high barrier of about 1.5 eV for the former process and a relatively low barrier of about 0.3 eV for the latter one, originating from the enhanced activity of the C-O bond near/around the C4 ring due to the hybrid carbon ring structure. Moreover, the locally spontaneous dynamic oxygen migration is further confirmed by MLMD simulations. This work sheds light on the potential of biphenylene as a catalyst for spatially controlled energy conversion and provides the guidance for realizing the dynamic covalent interface at other carbon-based or two-dimensional materials.
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Affiliation(s)
- Boyi Situ
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Jiangsu 225009, China.
| | - Zihan Yan
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Jiangsu 225009, China.
| | - Rubin Huo
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Jiangsu 225009, China.
| | - Kongbo Wang
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Jiangsu 225009, China.
| | - Liang Chen
- School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
| | - Zhe Zhang
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Jiangsu 225009, China.
| | - Liang Zhao
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Jiangsu 225009, China.
| | - Yusong Tu
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Jiangsu 225009, China.
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Jo SS, Singh A, Yang L, Tiwari SC, Hong S, Krishnamoorthy A, Sales MG, Oliver SM, Fox J, Cavalero RL, Snyder DW, Vora PM, McDonnell SJ, Vashishta P, Kalia RK, Nakano A, Jaramillo R. Growth Kinetics and Atomistic Mechanisms of Native Oxidation of ZrS xSe 2-x and MoS 2 Crystals. NANO LETTERS 2020; 20:8592-8599. [PMID: 33180506 DOI: 10.1021/acs.nanolett.0c03263] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A thorough understanding of native oxides is essential for designing semiconductor devices. Here, we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrSxSe2-x alloys and MoS2. ZrSxSe2-x alloys oxidize rapidly, and the oxidation rate increases with Se content. Oxidation of basal surfaces is initiated by favorable O2 adsorption and proceeds by a mechanism of Zr-O bond switching, that collapses the van der Waals gaps, and is facilitated by progressive redox transitions of the chalcogen. The rate-limiting process is the formation and out-diffusion of SO2. In contrast, MoS2 basal surfaces are stable due to unfavorable oxygen adsorption. Our results provide insight and quantitative guidance for designing and processing semiconductor devices based on ZrSxSe2-x and MoS2 and identify the atomistic-scale mechanisms of bonding and phase transformations in layered materials with competing anions.
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Affiliation(s)
- Seong Soon Jo
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Akshay Singh
- Department of Physics, Indian Institute of Science, Bengaluru, Karnataka 560012, India
| | - Liqiu Yang
- Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States
| | - Subodh C Tiwari
- Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States
| | - Sungwook Hong
- Department of Physics and Engineering, California State University, Bakersfield, Bakersfield, California 93311, United States
| | - Aravind Krishnamoorthy
- Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States
| | - Maria Gabriela Sales
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Sean M Oliver
- Department of Physics and Astronomy, George Mason University, Fairfax, Virginia 22030, United States
- Quantum Science and Engineering Center, George Mason University, Fairfax, Virginia 22030, United States
| | - Joshua Fox
- Electronic Materials and Devices Department, Applied Research Laboratory and 2-Dimensional Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Randal L Cavalero
- Electronic Materials and Devices Department, Applied Research Laboratory and 2-Dimensional Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - David W Snyder
- Electronic Materials and Devices Department, Applied Research Laboratory and 2-Dimensional Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Patrick M Vora
- Department of Physics and Astronomy, George Mason University, Fairfax, Virginia 22030, United States
- Quantum Science and Engineering Center, George Mason University, Fairfax, Virginia 22030, United States
| | - Stephen J McDonnell
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Priya Vashishta
- Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States
| | - Rajiv K Kalia
- Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States
| | - Aiichiro Nakano
- Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States
| | - R Jaramillo
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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