1
|
Saito Y, Hatayama S, Chang WH, Okada N, Irisawa T, Uesugi F, Takeguchi M, Sutou Y, Fons P. Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film. MATERIALS HORIZONS 2023; 10:2254-2261. [PMID: 37021482 DOI: 10.1039/d2mh01449a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Here we report on the growth of thin crystalline films of the metastable phase GeTe2. Direct observation by transmission electron microscopy revealed a Te-Ge-Te stacking with van der Waals gaps. Moreover, electrical and optical measurements revealed the films exhibted semiconducting properties commensurate with electronics applications. Feasibility studies in which device structures were fabricated demonstrated the potential application of GeTe2 as an electronic material.
Collapse
Affiliation(s)
- Yuta Saito
- Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan.
| | - Shogo Hatayama
- Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan.
| | - Wen Hsin Chang
- Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan.
| | - Naoya Okada
- Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan.
| | - Toshifumi Irisawa
- Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan.
| | - Fumihiko Uesugi
- Electron Microscopy Analysis Station, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, 305-0047, Japan
| | - Masaki Takeguchi
- Electron Microscopy Analysis Station, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, 305-0047, Japan
| | - Yuji Sutou
- Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Sendai, 980-8579, Japan
- Advanced Institute for Materials Research (AIMR), Tohoku University, 2-1-1 Katahira, Sendai, 980-8577, Japan
| | - Paul Fons
- Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan.
- Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan
| |
Collapse
|
2
|
Bergeron H, Lebedev D, Hersam MC. Polymorphism in Post-Dichalcogenide Two-Dimensional Materials. Chem Rev 2021; 121:2713-2775. [PMID: 33555868 DOI: 10.1021/acs.chemrev.0c00933] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.
Collapse
Affiliation(s)
- Hadallia Bergeron
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.,Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.,Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
| |
Collapse
|
3
|
Aryana K, Gaskins JT, Nag J, Stewart DA, Bai Z, Mukhopadhyay S, Read JC, Olson DH, Hoglund ER, Howe JM, Giri A, Grobis MK, Hopkins PE. Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices. Nat Commun 2021; 12:774. [PMID: 33536411 PMCID: PMC7858634 DOI: 10.1038/s41467-020-20661-8] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/20/2020] [Accepted: 12/15/2020] [Indexed: 01/30/2023] Open
Abstract
Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data processing to overcome the von Neumann bottleneck. In PCMs, data storage is driven by thermal excitation. However, there is limited research regarding PCM thermal properties at length scales close to the memory cell dimensions. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in interfacial thermal resistance as GST transitions from cubic to hexagonal crystal structure, resulting in a factor of 4 reduction in the effective thermal conductivity. Simulations reveal that interfacial resistance between PCM and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~ 40% and ~ 50%, respectively. These thermal insights present a new opportunity to reduce power and operating currents in PCMs.
Collapse
Affiliation(s)
- Kiumars Aryana
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - John T Gaskins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Joyeeta Nag
- Western Digital Corporation, San Jose, CA, 95119, USA
| | | | - Zhaoqiang Bai
- Western Digital Corporation, San Jose, CA, 95119, USA
| | - Saikat Mukhopadhyay
- NRC Research Associate at Naval Research Laboratory, Washington, DC, 20375, USA
| | - John C Read
- Western Digital Corporation, San Jose, CA, 95119, USA
| | - David H Olson
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Eric R Hoglund
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - James M Howe
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Ashutosh Giri
- Department of Mechanical, Industrial and Systems Engineering, University of Rhode Island, Kingston, RI, 02881, USA
| | | | - Patrick E Hopkins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA.
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA.
- Department of Physics, University of Virginia, Charlottesville, VA, 22904, USA.
| |
Collapse
|
4
|
Wang X, Tan J, Han C, Wang JJ, Lu L, Du H, Jia CL, Deringer VL, Zhou J, Zhang W. Sub-Angstrom Characterization of the Structural Origin for High In-Plane Anisotropy in 2D GeS 2. ACS NANO 2020; 14:4456-4462. [PMID: 32275386 DOI: 10.1021/acsnano.9b10057] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Materials with layered crystal structures and high in-plane anisotropy, such as black phosphorus, present unique properties and thus promise for applications in electronic and photonic devices. Recently, the layered structures of GeS2 and GeSe2 were utilized for high-performance polarization-sensitive photodetection in the short wavelength region due to their high in-plane optical anisotropy and wide band gap. The highly complex, low-symmetric (monoclinic) crystal structures are at the origin of the high in-plane optical anisotropy, but the structural nature of the corresponding nanostructures remains to be fully understood. Here, we present an atomic-scale characterization of monoclinic GeS2 nanostructures and quantify the in-plane structural anisotropy at the sub-angstrom level in real space by Cs-corrected scanning transmission electron microscopy. We elucidate the origin of this high in-plane anisotropy in terms of ordered and disordered arrangement of [GeS4] tetrahedra in GeS2 monolayers, through density functional theory (DFT) calculations and orbital-based bonding analyses. We also demonstrate high in-plane mechanical, electronic, and optical anisotropies in monolayer GeS2 and envision phase transitions under uniaxial strain that could potentially be exploited for nonvolatile memory applications.
Collapse
Affiliation(s)
- Xudong Wang
- Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jieling Tan
- Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Chengqian Han
- Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jiang-Jing Wang
- Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Lu Lu
- The School of Microelectronics, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hongchu Du
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Chun-Lin Jia
- The School of Microelectronics, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Volker L Deringer
- Department of Chemistry, Inorganic Chemistry Laboratory, University of Oxford, Oxford OX1 3QR, U.K
| | - Jian Zhou
- Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Wei Zhang
- Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
- Xi'an Jiaotong University Suzhou Institute, Suzhou 215123, China
| |
Collapse
|
5
|
Zhao S, Dong B, Wang H, Wang H, Zhang Y, Han ZV, Zhang H. In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects. NANOSCALE ADVANCES 2020; 2:109-139. [PMID: 36133982 PMCID: PMC9417339 DOI: 10.1039/c9na00623k] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2019] [Accepted: 10/30/2019] [Indexed: 05/30/2023]
Abstract
Low-symmetry layered materials such as black phosphorus (BP) have been revived recently due to their high intrinsic mobility and in-plane anisotropic properties, which can be used in anisotropic electronic and optoelectronic devices. Since the anisotropic properties have a close relationship with their anisotropic structural characters, especially for materials with low-symmetry, exploring new low-symmetry layered materials and investigating their anisotropic properties have inspired numerous research efforts. In this paper, we review the recent experimental progresses on low-symmetry layered materials and their corresponding anisotropic electrical transport, magneto-transport, optoelectronic, thermoelectric, ferroelectric, and piezoelectric properties. The boom of new low-symmetry layered materials with high anisotropy could open up considerable possibilities for next-generation anisotropic multifunctional electronic devices.
Collapse
Affiliation(s)
- Siwen Zhao
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science Technology of Ministry of Education, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University Shenzhen 518060 China
| | - Baojuan Dong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences Shenyang 110000 China
- School of Material Science and Engineering, University of Science and Technology of China Anhui 230026 China
| | - Huide Wang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science Technology of Ministry of Education, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University Shenzhen 518060 China
| | - Hanwen Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences Shenyang 110000 China
- School of Material Science and Engineering, University of Science and Technology of China Anhui 230026 China
| | - Yupeng Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science Technology of Ministry of Education, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University Shenzhen 518060 China
| | - Zheng Vitto Han
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences Shenyang 110000 China
- School of Material Science and Engineering, University of Science and Technology of China Anhui 230026 China
| | - Han Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science Technology of Ministry of Education, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University Shenzhen 518060 China
| |
Collapse
|
6
|
Exploring ultrafast threshold switching in In 3SbTe 2 phase change memory devices. Sci Rep 2019; 9:19251. [PMID: 31848416 PMCID: PMC6917803 DOI: 10.1038/s41598-019-55874-5] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/30/2019] [Accepted: 11/21/2019] [Indexed: 11/09/2022] Open
Abstract
Phase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability and fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. We report here, a unique property-portfolio of high thermal stability and picosecond threshold switching characteristics in In3SbTe2 (IST) PCM devices. Our experimental findings reveal an improved thermal stability of amorphous IST compared to most other phase change materials. Furthermore, voltage dependent threshold switching and current-voltage characteristics corroborate an extremely fast, yet low electric field threshold switching operation within an exceptionally small delay time of less than 50 picoseconds. The combination of low electric field and high speed switching with improved thermal stability of IST makes the material attractive for next-generation high-speed, non-volatile memory applications.
Collapse
|
7
|
Lotnyk A, Behrens M, Rauschenbach B. Phase change thin films for non-volatile memory applications. NANOSCALE ADVANCES 2019; 1:3836-3857. [PMID: 36132100 PMCID: PMC9419560 DOI: 10.1039/c9na00366e] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2019] [Accepted: 09/17/2019] [Indexed: 06/10/2023]
Abstract
The rapid development of Internet of Things devices requires real time processing of a huge amount of digital data, creating a new demand for computing technology. Phase change memory technology based on chalcogenide phase change materials meets many requirements of the emerging memory applications since it is fast, scalable and non-volatile. In addition, phase change memory offers multilevel data storage and can be applied both in neuro-inspired and all-photonic in-memory computing. Furthermore, phase change alloys represent an outstanding class of functional materials having a tremendous variety of industrially relevant characteristics and exceptional material properties. Many efforts have been devoted to understanding these properties with the particular aim to design universal memory. This paper reviews materials science aspects of chalcogenide-based phase change thin films relevant for non-volatile memory applications. Particular emphasis is put on local structure, control of disorder and its impact on material properties, order-disorder transitions and interfacial transformations.
Collapse
Affiliation(s)
- A Lotnyk
- Leibniz Institute of Surface Engineering (IOM) Permoserstr. 15 04318 Leipzig Germany
| | - M Behrens
- Leibniz Institute of Surface Engineering (IOM) Permoserstr. 15 04318 Leipzig Germany
| | - B Rauschenbach
- Leibniz Institute of Surface Engineering (IOM) Permoserstr. 15 04318 Leipzig Germany
| |
Collapse
|
8
|
Behrens M, Lotnyk A, Gerlach JW, Hilmi I, Abel T, Lorenz P, Rauschenbach B. Ultrafast interfacial transformation from 2D- to 3D-bonded structures in layered Ge-Sb-Te thin films and heterostructures. NANOSCALE 2018; 10:22946-22953. [PMID: 30500030 DOI: 10.1039/c8nr06567e] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2023]
Abstract
Two-dimensional van-der-Waals-bonded chalcogenide heterostructures have recently received a lot of attention due to promising applications in the fields of photonics, plasmonics and data storage. Of particular interest is the interfacial switching process inherent in these structures, which is assumed to occur locally at the van-der-Waals interfaces and thus represents an intracrystalline transition. However, detailed experimental studies on the underlying mechanism are still lacking. In this work, epitaxially grown thin films consisting of van-der-Waals-bonded Ge-Sb-Te and GeTe/Sb2Te3 based heterostructures are employed as a model system to investigate structural changes induced by a single ns-laser pulse. A combined approach using X-ray diffraction and advanced transmission electron microscopy is applied to study phase transitions within the Ge-Sb-Te-based thin films in detail. The results reveal ultrafast transitions from 2D-bonded layered structures to 3D-bonded structures via a transient molten phase. Moreover, the interface between the 2D- and 3D-bonded structures is well defined by a single van-der-Waals gap, suggesting that the transition can be controlled very precisely in its spatial extent by an appropriate choice of the laser fluence. Overall, the results of this work offer a new perspective on the switching mechanism in Ge-Sb-Te-based materials and demonstrate the potential of van-der-Waals-bonded Ge-Sb-Te compounds to be applied for novel phase-change memory concepts.
Collapse
Affiliation(s)
- Mario Behrens
- Leibniz Institute of Surface Engineering (IOM), Permoserstr. 15, D-04318 Leipzig, Germany.
| | | | | | | | | | | | | |
Collapse
|