Enhanced light out-coupling efficiency of quantum dot light emitting diodes by nanoimprint lithography

Color-conversion displays: current status and future outlook

The growing focus on enhancing color quality in liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) has spurred significant advancements in color-conversion materials. Furthermore, color conversion is also important for the development and commercialization of Micro-LEDs. This article provides a comprehensive review of different types of color conversion methods as well as different types of color conversion materials. We summarize the current status of patterning process, and discuss key strategies to enhance display performance. Finally, we speculate on the future prospects and roles that color conversion will play in ultra-high-definition micro- and projection displays.

High Efficiency Ultra-Narrow Emission Quantum Dot Light-Emitting Diodes Enabled by Microcavity

A wide-color-gamut display enableby a narrow emission linewidth facilitates a visually immersive experience akin to the real world. Quantum dot light-emitting diodes (QLEDs) with excellent color purity and high efficiency hold great promise as future candidates for high-definition displays. However, most devices typically exhibit emission linewidths exceeding 20 nm, and lack a universal strategy for further enhancing the color purity. In this study, a planar microcavity structure for realizing ultra-narrow emissions is developed by incorporating a distributed Bragg reflector into normal electroluminescent devices. By leveraging the strong optical resonance effect derived from this microcavity structure, red QLEDs are successfully fabricated with an extraordinary full width at half maximum of 11 nm in the normal direction, beyond the BT.2020 color coordinates. The fabricated red-microcavity QLEDs exhibit a considerable enhancement in the external quantum efficiency, which increases from 28.2% to 35.6%, together with an extended operating lifetime. The strategy adopted herein will serve as an effective reference for achieving ultra-narrow emission and high-efficiency QLEDs.

Inkjet printing of heavy-metal-free quantum dots-based devices: a review

Inkjet printing (IJP) has become a versatile, cost-effective technology for fabricating organic and hybrid electronic devices. Heavy-metal-based quantum dots (HM QDs) play a significant role in these inkjet-printed devices due to their excellent optoelectrical properties. Despite their utility, the intrinsic toxicity of HM QDs limits their applications in commercial products. To address this limitation, developing alternative HM-free quantum dots (HMF QDs) that have equivalent optoelectronic properties to HM QD is a promising approach to reduce toxicity and environmental impact. This article comprehensively reviews HMF QD-based devices fabricated using IJP methods. The discussion includes the basics of IJP technology, the formulation of printable HMF QD inks, and solutions to the coffee ring effect. Additionally, this review briefly explores the performance of typical state-of-the-art HMF QDs and cutting-edge characterization techniques for QD inks and printed QD films. The performance of printed devices based on HMF QDs is discussed and compared with those fabricated by other techniques. In the conclusion, the persisting challenges are identified, and perspectives on potential avenues for further progress in this rapidly developing research field are provided.

Color Revolution: Prospects and Challenges of Quantum-Dot Light-Emitting Diode Display Technologies

Light-emitting diodes (LEDs) based on colloidal quantum-dots (QDs) such as CdSe, InP, and ZnSeTe feature a unique advantage of narrow emission linewidth of ≈20 nm, which can produce highly accurate colors, making them a highly promising technology for the realization of displays with Rec. 2020 color gamut. With the rapid development in the past decades, the performances of red and green QLEDs have been remarkably improved, and their efficiency and lifetime can almost meet industrial requirements. However, the industrialization of QLED displays still faces many challenges; for example, (1) the device mechanisms including the charge injection/transport/leakage, exciton quenching, and device degradation are still unclear, which fundamentally limit QLED performance improvement; (2) the blue performances including the efficiency, chromaticity, and stability are relatively low, which are still far from the requirements of practical applications; (3) the color patterning processes including the ink-jet printing, transfer printing, and photolithography are still immature, which restrict the manufacturing of high resolution full-color QLED displays. Here, the recent advancements attempting to address the above challenges of QLED displays are specifically reviewed. After a brief overview of QLED development history, device structure/principle, and performances, the main focus is to investigate the recent discoveries on device mechanisms with an emphasis on device degradation. Then recent progress is introduced in blue QLEDs and color patterning. Finally, the opportunities, challenges, solutions, and future research directions of QLED displays are summarized.

Top-Emitting Quantum Dot Light-Emitting Diodes: Theory, Optimization, and Application

The superior optical properties of colloidal quantum dots (QDs) have garnered significant broad interest from academia and industry owing to their successful application in self-emitting QD-based light-emitting diodes (QLEDs). In particular, active research is being conducted on QLEDs with top-emission device architectures (TQLEDs) owing to their advantages such as easy integration with conventional backplanes, high color purity, and excellent light extraction. However, due to the complicated optical phenomena and their highly sensitive optoelectrical properties to experimental variations, TQLEDs cannot be optimized easily for practical use. This review summarizes previous studies that have investigated top-emitting device structures and discusses ways to advance the performance of TQLEDs. First, theories relevant to the optoelectrical properties of TQLEDs are introduced. Second, advancements in device optimization are presented, where the underlying theories for each are considered. Finally, multilateral strategies for TQLEDs to enable their wider application to advanced industries are discussed. This work believes that this review can provide valuable insights for realizing commercial TQLEDs applicable to a broad range of applications.

pH Tunable Patterning of Quantum Dots

Patterning of quantum dots (QDs) is essential for many, especially high-tech, applications. Here, pH tunable assembly of QDs over functional patterns prepared by electrohydrodynamic jet printing of poly(2-vinylpyridine) is presented. The selective adsorption of QDs from water dispersions is mediated by the electrostatic interaction between the ligand composed of 3-mercaptopropionic acid and patterned poly(2-vinylpyridine). The pH of the dispersion provides tunability at two levels. First, the adsorption density of QDs and fluorescence from the patterns can be modulated for pH > ≈4. Second, patterned features show unique type of disintegration resulting in randomly positioned features within areas defined by the printing for pH ≤ ≈4. The first capability is useful for deterministic patterning of QDs, whereas the second one enables hierarchically structured encoding of information by generating stochastic features of QDs within areas defined by the printing. This second capability is exploited for generating addressable security labels based on unclonable features. Through image analysis and feature matching algorithms, it is demonstrated that such patterns are unclonable in nature and provide a suitable platform for anti-counterfeiting applications. Collectively, the presented approach not only enables effective patterning of QDs, but also establishes key guidelines for addressable assembly of colloidal nanomaterials.

Randomly Disassembled Nanostructure for Wide Angle Light Extraction of Top-Emitting Quantum Dot Light-Emitting Diodes

The quantum dot light-emitting diode (QLED) represents one of the strongest display technologies and has unique advantages like a shallow emission spectrum and superior performance based on the cumulative studies of state-of-the-art quantum dot (QD) synthesis and interfacial engineering. However, research on managing the device's light extraction has been lacking compared to the conventional LED field. Moreover, relevant studies on top-emitting QLEDs (TE-QLEDs) have been severely lacking compared to bottom-emitting QLEDs (BE-QLEDs). This paper demonstrates a novel light extraction structure called the randomly disassembled nanostructure (RaDiNa). The RaDiNa is formed by detaching polydimethylsiloxane (PDMS) film from a ZnO nanorod (ZnO NR) layer and laying it on top of the TE-QLED. The RaDiNa-attached TE-QLED shows significantly widened angular-dependent electroluminescence (EL) intensities over the pristine TE-QLED, confirming the effective light extraction capability of the RaDiNa layer. Consequently, the optimized RaDiNa-attached TE-QLED achieves enhanced external quantum efficiency (EQE) over the reference device by 60%. For systematic analyses, current-voltage-luminance (J-V-L) characteristics are investigated using scanning electron microscopy (SEM) and optical simulation based on COMSOL Multiphysics. It is believed that this study's results provide essential information for the commercialization of TE-QLEDs.

Enhanced emission directivity from asymmetrically strained colloidal quantum dots

Current state-of-the-art quantum dot light-emitting diodes have reached close to unity internal quantum efficiency. Further improvement in external quantum efficiency requires more efficient photon out-coupling. Improving the directivity of the photon emission is considered to be the most feasible approach. Here, we report improved emission directivity from colloidal quantum dot films. By growing an asymmetric compressive shell, we are able to lift their band-edge state degeneracy, which leads to an overwhelming population of exciton with in-plane dipole moment, as desired for high-efficiency photon out-coupling. The in-plane dipole proportion determined by back-focal plane imaging method is 88%, remarkably higher than 70% obtained from conventional hydrostatically strained colloidal quantum dots. Enhanced emission directivity obtained here opens a path to increasing the external quantum efficiencies notably.

Research progress of full electroluminescent white light-emitting diodes based on a single emissive layer

Carbon neutrality, energy savings, and lighting costs and quality have always led to urgent demand for lighting technology innovation. White light-emitting diodes (WLEDs) based on a single emissive layer (SEL) fabricated by the solution method have been continuously researched in recent years; they are advantageous because they have a low cost and are ultrathin and flexible. Here, we reviewed the history and development of SEL-WLEDs over recent years to provide inspiration and promote their progress in lighting applications. We first introduced the emitters and analysed the advantages of these emitters in creating SEL-WLEDs and then reviewed some cases that involve the above emitters, which were formed via vacuum thermal evaporation or solution processes. Some notable developments that deserve attention are highlighted in this review due to their potential use in SEL-WLEDs, such as perovskite materials. Finally, we looked at future development trends of SEL-WLEDs and proposed potential research directions.

Nanofabrication Techniques: Challenges and Future Prospects

Nanofabrication of functional micro/nano-features is becoming increasingly relevant in various electronic, photonic, energy, and biological devices globally. The development of these devices with special characteristics originates from the integration of low-cost and high-quality micro/nano-features into 3D-designs. Great progress has been achieved in recent years for the fabrication of micro/nanostructured based devices by using different imprinting techniques. The key problems are designing techniques/approaches with adequate resolution and consistency with specific materials. By considering optical device fabrication on the large-scale as a context, we discussed the considerations involved in product fabrication processes compatibility, the feature's functionality, and capability of bottom-up and top-down processes. This review summarizes the recent developments in these areas with an emphasis on established techniques for the micro/nano-fabrication of 3-dimensional structured devices on large-scale. Moreover, numerous potential applications and innovative products based on the large-scale are also demonstrated. Finally, prospects, challenges, and future directions for device fabrication are addressed precisely.

Design and fabrication of hybrid MLAs/gratings for the enhancement of light extraction efficiency and distribution uniformity of OLEDs

Extracting light from organic light-emitting diodes (OLEDs) and improving the angular distribution are essential for their commercial applications in illumination and displays. In this work, hybrid microlens arrays (MLAs) and gratings with periods and depths in the scale of submicron have been designed and incorporated on the lighting surface of OLEDs for simultaneous enhancement of light outcoupling efficiency and angular distribution improvement. It is found that the augmentation of light extraction efficiency is mainly attributed to the MLAs, while the gratings can improve the viewing angle by increasing the angular distribution uniformity. A novel approach was proposed by combining photoresist thermal reflow, soft-lithography and plasma treatments on polydimethylsiloxane (PDMS) surfaces synergistically to realize gratings on the wavy surface of MLAs. It has been proved that with the hybrid MLAs/gratings, the external quantum efficiency (EQE) of the OLED can reach up to 22.8%, which increased by 24% compared to that of bare OLED. Moreover, the OLED with the hybrid MLAs/gratings showed an obvious lateral enhancement at wider viewing angle.

High performance blue quantum light-emitting diodes by attaching diffraction wrinkle patterns

Highly efficient blue quantum-dot light-emitting diodes (QLEDs) are still challenging to use in displays and solid-state lighting. Enhancing light outcoupling is one of the most effective methods to improve the performance of blue QLEDs. Here, a strategy for a spectrally independent boost in light outcoupling of blue QLEDs is demonstrated by quasi-periodic wrinkles, which are successfully used as a diffraction grating for extracting trapped light at the substrate/air interface. The quasi-periodic wrinkles can be adjusted from nano-scale to micron-scale under the condition of a constant aspect ratio, and the optimized wrinkle device shows a maximum luminance of 11 769 cd m-2 and a peak EQE of 15.41%. The enhancement of EQE is 49.5% higher compared to that of the reference device. Furthermore, simulation and calculation also indicate that external micron-scattering wrinkle patterns are an attractive option for boosting the performances of blue QLEDs.

Lead-Free Halide Perovskites for Light Emission: Recent Advances and Perspectives

Lead-based halide perovskites have received great attention in light-emitting applications due to their excellent properties, including high photoluminescence quantum yield (PLQY), tunable emission wavelength, and facile solution preparation. In spite of excellent characteristics, the presence of toxic element lead directly obstructs their further commercial development. Hence, exploiting lead-free halide perovskite materials with superior properties is urgent and necessary. In this review, the deep-seated reasons that benefit light emission for halide perovskites, which help to develop lead-free halide perovskites with excellent performance, are first emphasized. Recent advances in lead-free halide perovskite materials (single crystals, thin films, and nanocrystals with different dimensionalities) from synthesis, crystal structures, optical and optoelectronic properties to applications are then systematically summarized. In particular, phosphor-converted LEDs and electroluminescent LEDs using lead-free halide perovskites are fully examined. Ultimately, based on current development of lead-free halide perovskites, the future directions of lead-free halide perovskites in terms of materials and light-emitting devices are discussed.

Efficient All-Blade-Coated Quantum Dot Light-Emitting Diodes through Solvent Engineering

Blade-coating is a potential method for preparing all-solution-processed quantum dot light-emitting diodes (QLEDs) because of its high material utilization and large-scale preparation compatibility. However, it is a challenge to prepare uniform-emitting, high-performance QLEDs by blade coating because of film uniformity issues. Here, we report an efficient all-blade-coated QLED through solvent engineering. A binary water/methanol solvent is used to decrease the surface tension, leading to uniform blade-coating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) films. The binary solvent also enhances hole transport abilities because of phase separations and chain reorientations of PEDOT and PSS chains. The uniformity of a poly(N-vinylcarbazole) (PVK) layer is also improved by using a chlorobenzene/toluene binary solvent to facilitate the spontaneous spreading of the PVK solution on the substrate. This enables the successful preparation of an efficient QLED with a maximum external quantum efficiency of 12.48%, which is about 2.6 times the value of the QLED without solvent engineering.

Material and device engineering for high-performance blue quantum dot light-emitting diodes

Colloidal quantum dots (QDs) have attracted extensive attention due to their excellent optoelectronic properties, such as high quantum efficiency, narrow emission peaks, high color saturation, high stability and solution processability. Compared with the traditional display technology, QD based light-emitting diodes (QLEDs) show broad application prospects in the field of flat-panel displays and solid-state lighting. However, for full-color displays, the efficiency and lifetime of blue QLEDs are inferior to those of their green and red counterparts. Therefore, it is urgent for us to deeply understand the device physics and improve the performance of blue QLEDs through material and device engineering. An in-depth understanding of the optoelectronic properties (such as the structure of electronic states, electron-phonon interactions, Auger processes, etc.) and material engineering (such as size distribution control, composition control, and surface engineering) of blue emission QDs is greatly helpful for their applications in other fields. Herein, we review the key progress in the area of blue QLEDs, including the compositions and nanostructures of blue quantum dots, advances in the device architectures and the improvement of the device lifetime of blue QLEDs. The key factors that influence the blue device performance, including the nanostructure design and surface modification of QDs, interface engineering and architecture design of devices are discussed, aiming to propose possible solutions for these challenges, which will help to promote the commercialization process of QLEDs.

Light extraction from quantum dot light emitting diodes by multiscale nanostructures

Improving the light extraction efficiency by introducing optical-functional structures outside of quantum dot light emitting diodes (QLEDs) for further enhancing the external quantum efficiency (EQE) is essential for their application in display and lighting industries. Although the efficiency of QLEDs has been optimized by controlling the synthesis of the quantum dots, the low outcoupling efficiency is indeed unresolved because of total internal reflections, waveguides and metal surface absorptions within the device. Here, we utilize multiscale nanostructures attached to the outer surface of the glass substrate to extract the trapped light from the emitting layers of QLEDs. The result indicates that both the EQE and luminance are improved from 12.29% to 17.94% and 122 400 cd m^-2 to 178 700 cd m^-2, respectively. The maximum EQE and current efficiency improve to 21.3% and 88.3 cd A^-1, respectively, which are the best performances among reported green QLEDs with light outcoupling nanostructures. The improved performance is ascribed to the elimination of total internal reflection by multiscale nanostructures attached to the outer surface of the QLEDs. Additionally, the simulation results of the finite-difference time domain (FDTD) also demonstrate that the light trapping effect is reduced by the multiscale nanostructures. The design of novel light outcoupling nanostructures for further improving the efficiency of QLEDs can promote their application in display and lighting industries.

Enhancing extraction efficiency of quantum dot light-emitting diodes introducing a highly wrinkled ZnO electron transport layer

Light extraction efficiency is crucial for achieving highly efficient and bright quantum dot light-emitting diodes (QLEDs), and current efforts toward introducing light outcoupling nanostructures always require complicated procedures. An extremely simple and efficient method to introduce light outcoupling nanostructures in the ZnO electron transport layer (ETL) is demonstrated by adopting a certain heating rate during the annealing process. The ultimate device exhibits a current efficiency of 9.1 cd/A, giving a 50% efficiency improvement compared to the control device with a flat ZnO ETL. This arises from the increased light extraction efficiency induced by random nanostructures formed on a wrinkled ZnO ETL, which could also be modulated by adjusting the heating rate during the annealing process. This study not only provides a simple and efficient method to introduce light outcoupling nanostructures, but also shows ample room for further performance enhancement of QLEDs with the guideline of light extraction.

Quantum dot light-emitting diodes with an Al-doped ZnO anode

A study of hybrid ZnCdSeS/ZnS quantum dot light-emitting diodes (QLEDs) device fabricated with indium tin oxide-free transparent electrodes is presented. Al-doped zinc oxide (AZO) prepared by magnetron sputtering is adopted in anode transparent electrodes for green QLEDs with different sputtering pressures. A Kelvin probe force microscopy measurement showed that AZO has a work function of approximately 5.0 eV. The AZO/poly(ethylene-dioxythiophene)/polystyrenesulfonate (PEDOT:PSS) interface can be adjusted by the sputtering pressures, which was confirmed by hole-only devices. AZO films with low surface roughness can form a good AZO/PEDOT:PSS interface, which can increase the holes' injection, and result in an improved charge balance. The maximum current efficiency, luminance, and external quantum efficiency of the optimized QLED devices under a sputtering pressure of 1 mTorr can achieve values of 50.75 cd A^-1, 102 500 cd m^-2, and 12.94%, respectively.

Micro-to-nanometer patterning of solution-based materials for electronics and optoelectronics

Technologies for micro-to-nanometer patterns of solution-based materials (SBMs) contribute to a wide range of practical applications in the fields of electronics and optoelectronics. Here, state-of-the-art micro-to-nanometer scale patterning technologies of SBMs are disseminated. The utilisation of patterning for a wide-range of SBMs leads to a high level of control over conventional solution-based film fabrication processes that are not easily accessible for the control and fabrication of ordered micro-to-nanometer patterns. In this review, various patterning procedures of SBMs, including modified photolithography, direct-contact patterning, and inkjet printing, are briefly introduced with several strategies for reducing their pattern size to enhance the electronic and optoelectronic properties of SBMs explained. We then conclude with comments on future research directions in the field.

Scale Effect of a Fluorescent Waveguide in Organic Micromaterials: A Case Study Based on Coumarin Microfibers

The classical method for evaluating the waveguide ability only focuses on the optical loss coefficient. However, for the micro- or submicroscale, an organic waveguide is demonstrated by the present study whose scale effect should not be neglected. We found that the optical loss coefficient increased remarkably when decreasing the sectional size of the microfibers. Furthermore, simulations based on Finite-Difference Time-Domain also demonstrated the size-dependent effect of the waveguide. Both the experimental and simulating results showed that the optical loss coefficient converges to a certain value, which means that the scale effect can be neglected as the sectional size is large enough. On the basis of the present study, we suggest that the scale-dependent effect on the sectional size of the waveguide should be investigated by evaluating the waveguide ability by the optical loss coefficient.

Bright Quantum Dot Light-Emitting Diodes Enabled by Imprinted Speckle Image Holography Nanostructures

Super-bright all-solution-processed quantum dot light-emitting diodes (QLEDs) with an inverted structure are achieved by imprinting speckle image holography (SIH) structures inside the devices. QLEDs with imprinted random grating structures can reach a luminance of up to 146 000 Cd/m² at driving voltage of 8 V, which is 1.76 times higher than the value of control devices with planar architecture, setting a new brightness record for all-solution-processed inverted red QLEDs. The luminous power efficiency and external quantum efficiency of the QLEDs with imprinted structures are 1.8 and 1.65 times higher to those of the control devices, respectively. Further optical simulation results reveal that not only can the structure help extract the trapped internal photon energy but also the mechanical pressure during the imprinting process plays a crucial role in improving the device performance.

Beyond OLED: Efficient Quantum Dot Light-Emitting Diodes for Display and Lighting Application

The unique features of solution-processed quantum dots (QDs) including emission tunability in the visible range, high-quality saturated color and outstanding intrinsic stability in environment are highly desired in various application fields. Especially, for the preparation of wide color gamut displays, QDs with high photoluminescence quantum yield are deemed as the optimal fluorescent emitter that has been utilized in the backlight for liquid crystal display. Nevertheless, the commercialization of electrically driven self-emissive quantum dot light-emitting diode (QLED) display is the ultimate target due to its merits of high contrast, slim configuration and compatibility with flexible substrate. Through the great efforts devoted to material engineering and device configuration, astonishing progresses have been made in device performance, giving the QLED technology a great chance to compete with other counterparts for next-generation displays. In this review, we retrospect the development roadmap of QLED technology and introduce the essential principles in the QLED devices. Moreover, we discuss the key factors that affect the QLED efficiency and lifetime. Finally, the advances in device architectures and pixel patterning are also summarized.