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Hong I, Hong C, Tutanov OS, Massick C, Castleberry M, Zhang Q, Jeppesen DK, Higginbotham JN, Franklin JL, Vickers K, Coffey RJ, Ndukaife JC. Anapole-Assisted Low-Power Optical Trapping of Nanoscale Extracellular Vesicles and Particles. Nano Lett 2023; 23:7500-7507. [PMID: 37552655 PMCID: PMC10652798 DOI: 10.1021/acs.nanolett.3c02014] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/10/2023]
Abstract
This study addresses the challenge of trapping nanoscale biological particles using optical tweezers without the photothermal heating effect and the limitation presented by the diffraction limit. Optical tweezers are effective for trapping microscopic biological objects but not for nanoscale specimens due to the diffraction limit. To overcome this, we present an approach that uses optical anapole states in all-dielectric nanoantenna systems on distributed Bragg reflector substrates to generate strong optical gradient force and potential on nanoscale biological objects with negligible temperature rise below 1 K. The anapole antenna condenses the accessible electromagnetic energy to scales as small as 30 nm. Using this approach, we successfully trapped nanosized extracellular vesicles and supermeres (approximately 25 nm in size) using low laser power of only 10.8 mW. This nanoscale optical trapping platform has great potential for single molecule analysis while precluding photothermal degradation.
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Affiliation(s)
- Ikjun Hong
- Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
- Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Chuchuan Hong
- Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
- Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Oleg S Tutanov
- Department of Medicine, Vanderbilt University Medical Center, Nashville, Tennessee 37232, United States
- Center for Extracellular Vesicles Research, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Clark Massick
- Department of Medicine, Vanderbilt University Medical Center, Nashville, Tennessee 37232, United States
- Center for Extracellular Vesicles Research, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Mark Castleberry
- Department of Medicine, Vanderbilt University Medical Center, Nashville, Tennessee 37232, United States
- Center for Extracellular Vesicles Research, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Qin Zhang
- Department of Medicine, Vanderbilt University Medical Center, Nashville, Tennessee 37232, United States
- Center for Extracellular Vesicles Research, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Dennis K Jeppesen
- Department of Medicine, Vanderbilt University Medical Center, Nashville, Tennessee 37232, United States
| | - James N Higginbotham
- Department of Medicine, Vanderbilt University Medical Center, Nashville, Tennessee 37232, United States
- Center for Extracellular Vesicles Research, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Jeffrey L Franklin
- Department of Medicine, Vanderbilt University Medical Center, Nashville, Tennessee 37232, United States
- Department of Cell and Developmental Biology, Vanderbilt University, Nashville, Tennessee 37232, United States
- Center for Extracellular Vesicles Research, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Kasey Vickers
- Department of Medicine, Vanderbilt University Medical Center, Nashville, Tennessee 37232, United States
- Center for Extracellular Vesicles Research, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Robert J Coffey
- Department of Medicine, Vanderbilt University Medical Center, Nashville, Tennessee 37232, United States
- Department of Cell and Developmental Biology, Vanderbilt University, Nashville, Tennessee 37232, United States
- Epithelial Biology Center, Vanderbilt University Medical Center, Nashville, Tennessee 37232, United States
| | - Justus C Ndukaife
- Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
- Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
- Department of Mechanical Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
- Center for Extracellular Vesicles Research, Vanderbilt University, Nashville, Tennessee 37235, United States
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Huang CH, Wu CH, Bikbaev RG, Ye MJ, Chen CW, Wang TJ, Timofeev IV, Lee W, Chen KP. Wavelength- and Angle-Selective Photodetectors Enabled by Graphene Hot Electrons with Tamm Plasmon Polaritons. Nanomaterials (Basel) 2023; 13:693. [PMID: 36839064 PMCID: PMC9961655 DOI: 10.3390/nano13040693] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/03/2023] [Revised: 02/05/2023] [Accepted: 02/07/2023] [Indexed: 06/18/2023]
Abstract
Recently, two-dimensional materials have attracted attention owing to their special optical characteristics and miniaturization, with low thickness as well as extremely high responsivity. Additionally, Tamm plasmon polariton (TPP) resonance can be observed by combining a metal film and a one-dimensional (1D) photonic crystal (PC), where an electric field confinement is located at the metal-1D PC interface. In this study, a graphene layer combined with a TPP is proposed as a wavelength- and angle-selective photodetector. The graphene layer is located where the strong field confinement occurs, and the photocurrent response is significantly enhanced with increasing absorption by over four times (from 62.5 μA⋅W-1 to 271 μA⋅W-1 and undetected state to 330 μA⋅W-1 in two different samples). Moreover, the graphene-TPP photodetector has wavelength and angle selectivity, which can be applied in LiDAR detecting, sun sensors, laser beacon tracking, and navigational instruments in the future.
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Affiliation(s)
- Cheng-Han Huang
- Institute of Photonic System, National Yang Ming Chiao Tung University, 301 Sec. 2, Gaofa 3rd Road, Tainan 711010, Taiwan
| | - Chia-Hung Wu
- College of Photonics, National Yang Ming Chiao Tung University, 301 Sec. 2, Gaofa 3rd Road, Tainan 711010, Taiwan
| | - Rashid G. Bikbaev
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
- Siberian Federal University, 660041 Krasnoyarsk, Russia
| | - Ming-Jyun Ye
- College of Photonics, National Yang Ming Chiao Tung University, 301 Sec. 2, Gaofa 3rd Road, Tainan 711010, Taiwan
| | - Chi-Wen Chen
- Institute of Photonic System, National Yang Ming Chiao Tung University, 301 Sec. 2, Gaofa 3rd Road, Tainan 711010, Taiwan
| | - Tung-Jung Wang
- Institute of Imaging and Biomedical Photonics, National Yang Ming Chiao Tung University, 301 Sec. 2, Gaofa 3rd Road, Tainan 711010, Taiwan
| | - Ivan V. Timofeev
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
- Siberian Federal University, 660041 Krasnoyarsk, Russia
| | - Wei Lee
- Institute of Imaging and Biomedical Photonics, National Yang Ming Chiao Tung University, 301 Sec. 2, Gaofa 3rd Road, Tainan 711010, Taiwan
| | - Kuo-Ping Chen
- Institute of Imaging and Biomedical Photonics, National Yang Ming Chiao Tung University, 301 Sec. 2, Gaofa 3rd Road, Tainan 711010, Taiwan
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
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Buchnev O, Belosludtsev A, Fedotov VA. Observation of a High-Energy Tamm Plasmon State in the Near-IR Region. ACS Appl Mater Interfaces 2022; 14:13638-13644. [PMID: 35261229 PMCID: PMC9096782 DOI: 10.1021/acsami.2c00486] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/09/2022] [Accepted: 02/28/2022] [Indexed: 06/14/2023]
Abstract
We report on the experimental observation of a Tamm plasmon state in the near-IR region characterized by an anomalously high energy level located in the upper half of the photonic band gap. Such a "blue" Tamm plasmon was demonstrated at the interface between a conventional, completely periodic Bragg reflector and a nanostructured nonresonant thin gold grating. We study the effect of the grating period on the characteristics of the anomalous state and show that the anomaly results from a nontrivial topology of the nanograting's optical near field, which cannot be captured by the effective medium approach and transfer matrix method commonly employed in the analysis of Tamm plasmons.
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Affiliation(s)
- Oleksandr Buchnev
- Optoelectronics
Research Centre, University of Southampton, Southampton SO17 1BJ, U.K.
- Centre
for Photonic Metamaterials, University of
Southampton, Southampton SO17 1BJ, U.K.
| | - Alexandr Belosludtsev
- Optical
Coating Laboratory, Center for Physical
Sciences and Technology, Vilnius LT-02300, Lithuania
| | - Vassili A. Fedotov
- Optoelectronics
Research Centre, University of Southampton, Southampton SO17 1BJ, U.K.
- Centre
for Photonic Metamaterials, University of
Southampton, Southampton SO17 1BJ, U.K.
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Zheng Y, Chen J, Li W, Wang C, Peng J, Wei B, Li X. Improved green thermal activated delayed fluorescence OLEDs based on thermally evaporated distributed Bragg reflector (DBR) of MgF 2/ZnS. Nanotechnology 2021; 32:455203. [PMID: 34415853 DOI: 10.1088/1361-6528/ac1b51] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2021] [Accepted: 08/05/2021] [Indexed: 06/13/2023]
Abstract
Unlike the traditional fabrication of distributed Bragg reflector (DBR) structure via atomic layer deposition or spin-coating, here the 1-6 pairs of magnesium fluoride (MgF2)/zinc sulfide (ZnS) alternative dielectric layers were grown via thermal evaporation. The absorption, transmission, reflection, and photoluminescence (PL) spectra were evaluated. 5 pair MgF2/ZnS denotes the largest reflectance (88.5% at 535 nm) together with a stopband at 450-650 nm among the 1- 6 pair dielectric layers, exhibiting the potential for using as DBR. Relative to the bare 4,4'-bis(carbazol-9-yl)biphenyl(CBP):(4s,6s)-2,4,5,6-tetra(9H-carbazol-9-yl) isophthalonitrile (4CzIPN) film, the PL intensity of CBP:4CzIPN/5 pair MgF2/ZnS DBR is enhanced and splitted into two peaks. The 5 pair alternative dielectric film presents more uniform aggregation over 4 pair MgF2/ZnS. The cross-sectional scanning electron microscopic image denotes explicit layering for the MgF2and ZnS. The organic light-emitting diode (OLED) incorporating 5 pair MgF2/ZnS DBR layers illustrates significantly improved electroluminescent (EL) performance due to the photons concentrated in the direction perpendicular to the DBR. The slightly narrowed EL spectrum is originated from the microcavity effect between the two Al electrodes. Here we develop a universal method for the DBR fabrication suitable to most of OLEDs.
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Affiliation(s)
- Yanqiong Zheng
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, People's Republic of China
| | - Juncong Chen
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, People's Republic of China
- School of Materials Science and Engineering, Shanghai University, Shanghai 200072, People's Republic of China
| | - Weiguang Li
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, People's Republic of China
- School of Materials Science and Engineering, Shanghai University, Shanghai 200072, People's Republic of China
| | - Chao Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, People's Republic of China
- School of Materials Science and Engineering, Shanghai University, Shanghai 200072, People's Republic of China
| | - Junbiao Peng
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, People's Republic of China
| | - Bin Wei
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, People's Republic of China
| | - Xifeng Li
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, People's Republic of China
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Huang CY, Hong KB, Huang ZT, Hsieh WH, Huang WH, Lu TC. Challenges and Advancement of Blue III-Nitride Vertical-Cavity Surface-Emitting Lasers. Micromachines (Basel) 2021; 12:mi12060676. [PMID: 34207796 PMCID: PMC8230226 DOI: 10.3390/mi12060676] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/26/2021] [Revised: 05/30/2021] [Accepted: 06/04/2021] [Indexed: 11/16/2022]
Abstract
Since the first demonstration of (Al, In, Ga)N-based blue vertical-cavity surface-emitting lasers (VCSELs) in 2008, the maximum output power (Pmax) and threshold current density (Jth) has been improved significantly after a decade of technology advancements. This article reviewed the key challenges for the realization of VCSELs with III-nitride materials, such as inherent polarization effects, difficulties in distributed Bragg's reflectors (DBR) fabrication for a resonant cavity, and the anti-guiding effect due to the deposited dielectrics current aperture. The significant tensile strain between AlN and GaN hampered the intuitive cavity design with two epitaxial DBRs from arsenide-based VCSELs. Therefore, many alternative cavity structures and processing technologies were developed; for example, lattice-matched AlInN/GaN DBR, nano-porous DBR, or double dielectric DBRs via various overgrowth or film transfer processing strategies. The anti-guiding effect was overcome by integrating a fully planar or slightly convex DBR as one of the reflectors. Special designs to limit the emission polarization in a circular aperture were also summarized. Growing VCSELs on low-symmetry non-polar and semipolar planes discriminates the optical gain along different crystal orientations. A deliberately designed high-contrast grating could differentiate the reflectivity between the transverse-electric field and transverse-magnetic field, which restricts the lasing mode to be the one with the higher reflectivity. In the future, the III-nitride based VCSEL shall keep advancing in total power, applicable spectral region, and ultra-low threshold pumping density with the novel device structure design and processing technologies.
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Bai J, Cai Y, Feng P, Fletcher P, Zhu C, Tian Y, Wang T. Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width. ACS Nano 2020; 14:6906-6911. [PMID: 32453549 PMCID: PMC7315628 DOI: 10.1021/acsnano.0c01180] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2020] [Accepted: 05/26/2020] [Indexed: 06/02/2023]
Abstract
Augmented reality and visual reality (AR and VR) microdisplays require micro light emitting diodes (μLEDs) with an ultrasmall dimension (≤5 μm), high external quantum efficiency (EQE), and narrow spectral line width. Unfortunately, dry etching which is the most crucial step for the fabrication of μLEDs in current approaches introduces severe damages, which seem to become an insurmountable challenge for achieving ultrasmall μLEDs with high EQE. Furthermore, it is well-known that μLEDs which require InGaN layers as an emitting region naturally exhibit significantly broad spectral line width, which becomes increasingly severe toward long wavelengths such as green. In this paper, we have reported a combination of our selective overgrowth approach developed very recently and epitaxial lattice-matched distributed Bragg reflectors (DBRs) embedded in order to address all these fundamental issues. As a result, our μLEDs with a diameter of 3.6 μm and an interpitch of 2 μm exhibit an ultrahigh EQE of 9% at ∼500 nm. More importantly, the spectral line width of our μLEDs has been significantly reduced down to 25 nm, the narrowest value reported so far for III-nitride green μLEDs.
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Murawski C, Mischok A, Booth J, Kumar JD, Archer E, Tropf L, Keum CM, Deng YL, Yoshida K, Samuel IDW, Schubert M, Pulver SR, Gather MC. Narrowband Organic Light-Emitting Diodes for Fluorescence Microscopy and Calcium Imaging. Adv Mater 2019; 31:e1903599. [PMID: 31486161 DOI: 10.1002/adma.201903599] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/06/2019] [Revised: 08/05/2019] [Indexed: 06/10/2023]
Abstract
Fluorescence imaging is an indispensable tool in biology, with applications ranging from single-cell to whole-animal studies and with live mapping of neuronal activity currently receiving particular attention. To enable fluorescence imaging at cellular scale in freely moving animals, miniaturized microscopes and lensless imagers are developed that can be implanted in a minimally invasive fashion; but the rigidity, size, and potential toxicity of the involved light sources remain a challenge. Here, narrowband organic light-emitting diodes (OLEDs) are developed and used for fluorescence imaging of live cells and for mapping of neuronal activity in Drosophila melanogaster via genetically encoded Ca2+ indicators. In order to avoid spectral overlap with fluorescence from the sample, distributed Bragg reflectors are integrated onto the OLEDs to block their long-wavelength emission tail, which enables an image contrast comparable to conventional, much bulkier mercury light sources. As OLEDs can be fabricated on mechanically flexible substrates and structured into arrays of cell-sized pixels, this work opens a new pathway for the development of implantable light sources that enable functional imaging and sensing in freely moving animals.
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Affiliation(s)
- Caroline Murawski
- Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK
| | - Andreas Mischok
- Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK
| | - Jonathan Booth
- Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK
- School of Psychology and Neuroscience, University of St Andrews, St Andrews, KY16 9JP, UK
| | - Jothi Dinesh Kumar
- Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK
| | - Emily Archer
- Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK
| | - Laura Tropf
- Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK
| | - Chang-Min Keum
- Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK
| | - Ya-Li Deng
- Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK
| | - Kou Yoshida
- Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK
| | - Ifor D W Samuel
- Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK
| | - Marcel Schubert
- Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK
| | - Stefan R Pulver
- School of Psychology and Neuroscience, University of St Andrews, St Andrews, KY16 9JP, UK
| | - Malte C Gather
- Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews, KY16 9SS, UK
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Zhou S, Xu H, Liu M, Liu X, Zhao J, Li N, Liu S. Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes. Micromachines (Basel) 2018; 9:E650. [PMID: 30544773 DOI: 10.3390/mi9120650] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2018] [Revised: 11/30/2018] [Accepted: 12/06/2018] [Indexed: 11/16/2022]
Abstract
We demonstrated two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with distributed Bragg reflector (DBR) and without DBR to investigate the effect of dielectric TiO₂/SiO₂ DBR on optical and electrical characteristics of FCLEDs. The reflector consisting of two single TiO₂/SiO₂ DBR stacks optimized for different central wavelengths demonstrates a broader reflectance bandwidth and a less dependence of reflectance on the incident angle of light. As a result, the light output power (LOP) of FCLED with DBR shows 25.3% higher than that of FCLED without DBR at 150 mA. However, due to the better heat dissipation of FCLED without DBR, it was found that the light output saturation current shifted from 268 A/cm² for FCLED with DBR to 296 A/cm² for FCLED without DBR. We found that the use of via-hole-based n-type contacts can spread injection current uniformly over the entire active emitting region. Our study paves the way for application of DBR and via-hole-based n-type contact in high-efficiency FCLEDs.
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Shen P, Wang G, Kang B, Guo W, Shen L. High-Efficiency and High-Color-Rendering-Index Semitransparent Polymer Solar Cells Induced by Photonic Crystals and Surface Plasmon Resonance. ACS Appl Mater Interfaces 2018; 10:6513-6520. [PMID: 29380594 DOI: 10.1021/acsami.7b18765] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Semitransparent polymer solar cells (ST-PSCs) show attractive potential in power-generating windows or building-integrated photovoltaics. However, the development of ST-PSCs is lagging behind opaque PSCs because of the contradiction between device efficiency and transmission. Herein, Ag/Au alloy nanoparticles and photonic crystals (PCs) were simultaneously introduced into ST-PSCs, acting compatibly as localized surface plasmon resonances and distributed Bragg reflectors to enhance light absorption and transmission. As a result, ST-PSCs based on a hybrid PTB7-Th:PC71BM active layer contribute an efficiency as high as 7.13 ± 0.15% and an average visible transmission beyond 20%, which are superior to most of the reported results. Furthermore, PCs can partly compensate valley range of transmission by balancing reflection and transmission regions, yielding a high color rendering index of 95. We believe that the idea of two light management methods compatibly enhancing the performance of ST-PSCs can offer a promising path to develop photovoltaic applications.
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Affiliation(s)
- Ping Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University , 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Guoxin Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University , 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Bonan Kang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University , 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Wenbin Guo
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University , 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University , 2699 Qianjin Street, Changchun 130012, People's Republic of China
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