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Araki T, Li K, Suzuki D, Abe T, Kawabata R, Uemura T, Izumi S, Tsuruta S, Terasaki N, Kawano Y, Sekitani T. Broadband Photodetectors and Imagers in Stretchable Electronics Packaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2304048. [PMID: 37403808 DOI: 10.1002/adma.202304048] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Revised: 06/22/2023] [Accepted: 07/03/2023] [Indexed: 07/06/2023]
Abstract
The integration of flexible electronics with optics can help realize a powerful tool that facilitates the creation of a smart society wherein internal evaluations can be easily performed nondestructively from the surface of various objects that is used or encountered in daily lives. Here, organic-material-based stretchable optical sensors and imagers that possess both bending capability and rubber-like elasticity are reviewed. The latest trends in nondestructive evaluation equipment that enable simple on-site evaluations of health conditions and abnormalities are discussed without subjecting the targeted living bodies and various objects to mechanical stress. Real-time performance under real-life conditions is becoming increasingly important for creating smart societies interwoven with optical technologies. In particular, the terahertz (THz)-wave region offers a substance- and state-specific fingerprint spectrum that enables instantaneous analyses. However, to make THz sensors accessible, the following issues must be addressed: broadband and high-sensitivity at room temperature, stretchability to follow the surface movements of targets, and digital transformation compatibility. The materials, electronics packaging, and remote imaging systems used to overcome these issues are discussed in detail. Ultimately, stretchable optical sensors and imagers with highly sensitive and broadband THz sensors can facilitate the multifaceted on-site evaluation of solids, liquids, and gases.
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Affiliation(s)
- Teppei Araki
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1 Mihogaoka, Ibaraki-shi, 567-0047, Osaka, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamada-Oka, Suita, 565-0871, Osaka, Japan
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, 565-0871, Osaka, Japan
| | - Kou Li
- Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, 112-8551, Tokyo, Japan
| | - Daichi Suzuki
- Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 807-1, Shuku-machi, Tosu, 841-0052, Saga, Japan
| | - Takaaki Abe
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1 Mihogaoka, Ibaraki-shi, 567-0047, Osaka, Japan
| | - Rei Kawabata
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1 Mihogaoka, Ibaraki-shi, 567-0047, Osaka, Japan
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, 565-0871, Osaka, Japan
| | - Takafumi Uemura
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1 Mihogaoka, Ibaraki-shi, 567-0047, Osaka, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamada-Oka, Suita, 565-0871, Osaka, Japan
| | - Shintaro Izumi
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1 Mihogaoka, Ibaraki-shi, 567-0047, Osaka, Japan
- Graduate School of Science, Technology and Innovation, Kobe University, 1-1 Rokkodai-cho, Nada-ku, 657-8501, Kobe, Japan
| | - Shuichi Tsuruta
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1 Mihogaoka, Ibaraki-shi, 567-0047, Osaka, Japan
| | - Nao Terasaki
- Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 807-1, Shuku-machi, Tosu, 841-0052, Saga, Japan
| | - Yukio Kawano
- Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, 112-8551, Tokyo, Japan
- National Institute of Informatics, Tokyo, 101-8430, Japan
| | - Tsuyoshi Sekitani
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1 Mihogaoka, Ibaraki-shi, 567-0047, Osaka, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamada-Oka, Suita, 565-0871, Osaka, Japan
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, 565-0871, Osaka, Japan
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2
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Nguyen TMH, Tran MH, Bark CW. Deep-Ultraviolet Transparent Electrode Design for High-Performance and Self-Powered Perovskite Photodetector. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2979. [PMID: 37999333 PMCID: PMC10675135 DOI: 10.3390/nano13222979] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2023] [Revised: 11/17/2023] [Accepted: 11/19/2023] [Indexed: 11/25/2023]
Abstract
In this study, a highly crystalline and transparent indium-tin-oxide (ITO) thin film was prepared on a quartz substrate via RF sputtering to fabricate an efficient bottom-to-top illuminated electrode for an ultraviolet C (UVC) photodetector. Accordingly, the 26.6 nm thick ITO thin film, which was deposited using the sputtering method followed by post-annealing treatment, exhibited good transparency to deep-UV spectra (67% at a wavelength of 254 nm), along with high electrical conductivity (11.3 S/cm). Under 254 nm UVC illumination, the lead-halide-perovskite-based photodetector developed on the prepared ITO electrode in a vertical structure exhibited an excellent on/off ratio of 1.05 × 104, a superb responsivity of 250.98 mA/W, and a high specific detectivity of 4.71 × 1012 Jones without external energy consumption. This study indicates that post-annealed ITO ultrathin films can be used as electrodes that satisfy both the electrical conductivity and deep-UV transparency requirements for high-performance bottom-illuminated optoelectronic devices, particularly for use in UVC photodetectors.
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Affiliation(s)
| | | | - Chung Wung Bark
- Department of Electrical Engineering, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si 13120, Gyeonggi-do, Republic of Korea; (T.M.H.N.); (M.H.T.)
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3
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Bai X, Gao W, Cai Y, Bai Z, Qi Y, Yan B, Wang Y, Lu Z, Ding J. Advanced Stretchable Photodetectors: Strategies, Materials and Devices. Chemistry 2023; 29:e202203022. [PMID: 36367372 DOI: 10.1002/chem.202203022] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/27/2022] [Revised: 10/28/2022] [Accepted: 11/11/2022] [Indexed: 11/13/2022]
Abstract
Past decades have witnessed the generation of new stretchable photodetectors in electronic eyes, health sensing, wearable devices, intelligent monitoring and other fields. Stretchable devices require not only outstanding performance but also excellent flexibility, adaptability and stability. Innovative strategies have been proposed to realize the stretchability of devices. In addition, novel functional materials including zero-dimensional nanomaterials, one-dimensional inorganic nanomaterials, two-dimensional layered materials, organic materials, and organic-inorganic composite materials with excellent properties are emerging to continuously improve the performance of devices. Here, the recent research progress of stretchable photodetectors in terms of both various design methods and functional materials is outlined. The optical performance and stretchable properties are also comprehensively reviewed. Finally, a summary and the challenges associated with the application of stretchable photodetectors are presented.
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Affiliation(s)
- Xinyao Bai
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
| | - Wanxiao Gao
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
| | - Yunpeng Cai
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
| | - Zhenxu Bai
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China.,MQ Photonics Research Centre, Department of Physics and Astronomy, Macquarie University, Sydney, NSW, 2109, Australia
| | - Yaoyao Qi
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
| | - Bingzheng Yan
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
| | - Yulei Wang
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
| | - Zhiwei Lu
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
| | - Jie Ding
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, 300401, P. R. China.,Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, 300401, P. R. China
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4
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Nguyen TMH, Garner SM, Bark CW. Metal Electrode-Free Halide Perovskite-Based Flexible Ultraviolet-C Photodetector with Large Area. NANOSCALE RESEARCH LETTERS 2022; 17:94. [PMID: 36129560 PMCID: PMC9492825 DOI: 10.1186/s11671-022-03733-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/05/2022] [Accepted: 09/09/2022] [Indexed: 06/15/2023]
Abstract
Ultraviolet-C (UVC) photodetector has appealed to a numerous number of research owing to its manifold applications in wireless communication, flame monitoring, and medicine. However, in addition to superior performance and high stability of recent studies, scalability and production cost are important factors for commercialization and practical implementation. In this study, a halide perovskite-based UVC photodetector was fabricated using spin-coating process and low-temperature annealing. Corning® Willow® Glass was selected as the substrate for the bottom-illuminated device due to its flexibility and exceptional optical transmission (approximately 60%) in the deep-UV region. The device had a vertical structure with a large active area (1 cm2) owing to the judicious utilization of electrodes. Under bent state with a curvature radius of 25 mm, the as-fabricated device exhibited high response and repeatability with an on/off ratio of 9.57 × 103, a fast response speed of 45/46 ms (rise/fall times) at zero bias under the illumination of a 254-nm UV lamp. The results are based on a flexible and lightweight photodetector without the utilization of notable metal electrodes.
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Affiliation(s)
- Thi My Huyen Nguyen
- Department of Electrical Engineering, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, 13120, South Korea
| | - Sean M Garner
- Corning Research and Development Corporation, One River Front Plaza, Corning, NY, 14831, USA
| | - Chung Wung Bark
- Department of Electrical Engineering, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, 13120, South Korea.
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5
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Recent Progress on Graphene Flexible Photodetectors. MATERIALS 2022; 15:ma15144820. [PMID: 35888288 PMCID: PMC9318373 DOI: 10.3390/ma15144820] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/14/2022] [Revised: 06/18/2022] [Accepted: 06/29/2022] [Indexed: 01/02/2023]
Abstract
In recent years, optoelectronics and related industries have developed rapidly. As typical optoelectronics devices, photodetectors (PDs) are widely applied in various fields. The functional materials in traditional PDs exhibit high hardness, and the performance of these rigid detectors is thus greatly reduced upon their stretching or bending. Therefore, the development of new flexible PDs with bendable and foldable functions is of great significance and has much interest in wearable, implantable optoelectronic devices. Graphene with excellent electrical and optical performance constructed on various flexible and rigid substrates has great potential in PDs. In this review, recent research progress on graphene-based flexible PDs is outlined. The research states of graphene conductive films are summarized, focusing on PDs based on single-component graphene and mixed-structure graphene, with a systematic analysis of their optical and mechanical performance, and the techniques for optimizing the PDs are also discussed. Finally, a summary of the current applications of graphene flexible PDs and perspectives is provided, and the remaining challenges are discussed.
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6
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Li K, Araki T, Utaki R, Tokumoto Y, Sun M, Yasui S, Kurihira N, Kasai Y, Suzuki D, Marteijn R, den Toonder JM, Sekitani T, Kawano Y. Stretchable broadband photo-sensor sheets for nonsampling, source-free, and label-free chemical monitoring by simple deformable wrapping. SCIENCE ADVANCES 2022; 8:eabm4349. [PMID: 35544563 PMCID: PMC9094654 DOI: 10.1126/sciadv.abm4349] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Accepted: 03/25/2022] [Indexed: 06/15/2023]
Abstract
Chemical monitoring communicates diverse environmental information from industrial and biological processes. However, promising and sustainable systems and associated inspection devices that dynamically enable on-site quality monitoring of target chemicals confined inside transformable and opaque channels are yet to be investigated. This paper designs stretchable photo-sensor patch sheets for nonsampling, source-free, and label-free on-site dynamic chemical monitoring of liquids flowing inside soft tubes via simple deformable surface wrapping. The device integrates carbon nanotube-based broadband photo-absorbent thin films with multilayer-laminated stretchable electrodes and substrates. The patterned rigid-soft structure of the proposed device provides durability and optical stability against mechanical deformations with a stretchability range of 70 to 280%, enabling shape-conformable attachments to transformable objects. The effective use of omnidirectional and transparent blackbody radiation from free-form targets themselves allows compact measurement configuration and enhances the functionality and simplicity of this scheme, while the presenting technology monitors concentrations of arbitrary water-soluble chemicals.
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Affiliation(s)
- Kou Li
- Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
- Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
| | - Teppei Araki
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki-shi, Osaka 567-0047, Japan
| | - Ryogo Utaki
- Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
- Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
| | - Yu Tokumoto
- Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
- Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
| | - Meiling Sun
- Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
- Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
| | - Satsuki Yasui
- Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
- Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
| | - Naoko Kurihira
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki-shi, Osaka 567-0047, Japan
| | - Yuko Kasai
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki-shi, Osaka 567-0047, Japan
| | - Daichi Suzuki
- Sensing System Research Center, National Institute of Advanced Science and Technology, 807-1 Shuku-machi, Tosu-shi, Saga 841-0052, Japan
| | - Ruben Marteijn
- Department of Mechanical Engineering and Institute for Complex Molecular Systems, Eindhoven University of Technology, Eindhoven 5600 MB, Netherlands
| | - Jaap M.J. den Toonder
- Department of Mechanical Engineering and Institute for Complex Molecular Systems, Eindhoven University of Technology, Eindhoven 5600 MB, Netherlands
| | - Tsuyoshi Sekitani
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki-shi, Osaka 567-0047, Japan
| | - Yukio Kawano
- Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
- Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
- Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551, Japan
- National Institute of Informatics, 2-1-2 Hitotsubashi, Chiyoda-ku, Tokyo 101-8430, Japan
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7
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Mathur A, Fan H, Maheshwari V. Soft Polymer-Organolead Halide Perovskite Films for Highly Stretchable and Durable Photodetectors with Pt-Au Nanochain-Based Electrodes. ACS APPLIED MATERIALS & INTERFACES 2021; 13:58956-58965. [PMID: 34851102 DOI: 10.1021/acsami.1c18939] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The rigid and brittle nature of methylammonium lead iodide (MAPbI3) polycrystalline films limits their application in stretchable devices due to rapid deterioration in performance on cycling. By incorporation of polymer chains in the MAPbI3 films, a strategy to alter the mechanical modulus and the viscoelastic nature of the films has been developed. Combining this with flexible nanochain electrodes, highly stretchable and stable perovskite devices have been fabricated. The resultant polymer-MAPbI3 photodetector exhibits ultralow dark currents (∼10-11 A) and high light switching ratios (∼103) and maintains 75% of performance after 30 days. The viscoelastic nature and lower modulus of the polymer improve the energy dissipation in the polymer-MAPbI3 devices; as a result, they maintain 52% of the device performance after 10000 stretching cycles at 50% strain. The difference in the mechanical behavior is clearly observed in the failure mode of the two films. While rapid catastrophic cracking is observed in MAPbI3 films, the intensity and size of such crack formation are highly limited in polymer-MAPbI3 films, which prevent their failure.
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Affiliation(s)
- Avi Mathur
- Department of Chemistry, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Hua Fan
- Department of Chemistry, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Vivek Maheshwari
- Department of Chemistry, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
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8
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Gao J, Lv Q. Ambipolar Field‐Effect Transistor Based on CH
3
NH
3
PbI
3
Microwires. ChemistrySelect 2021. [DOI: 10.1002/slct.202101483] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Jinghan Gao
- Department of Applied Chemistry School of Biotechnology and Food Science Tianjin University of Commerce Tianjin 300134 China
| | - Qianrui Lv
- School of Science Beijing Jiaotong University Beijing 100044 China
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9
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Han S, Noh S, Kim JW, Lee CR, Lee SK, Kim JS. Stretchable Inorganic GaN-Nanowire Photosensor with High Photocurrent and Photoresponsivity. ACS APPLIED MATERIALS & INTERFACES 2021; 13:22728-22737. [PMID: 33969979 DOI: 10.1021/acsami.1c03023] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
To effectively implement wearable systems, their constituent components should be made stretchable. We successfully fabricated highly efficient stretchable photosensors made of inorganic GaN nanowires (NWs) as light-absorbing media and graphene as a carrier channel on polyurethane substrates using the pre-strain method. When a GaN-NW photosensor was stretched at a strain level of 50%, the photocurrent was measured to be 0.91 mA, corresponding to 87.5% of that (1.04 mA) obtained in the released state, and the photoresponsivity was calculated to be 11.38 A/W. These photosensors showed photocurrent and photoresponsivity levels much higher than those previously reported for any stretchable semiconductor-containing photosensor. To explain the superior performances of the stretchable GaN-NW photosensor, it was approximated as an equivalent circuit with resistances and capacitances, and in this way, we analyzed the behavior of the photogenerated carriers, particularly at the NW-graphene interface. In addition, the buckling phenomenon typically observed in organic-based stretchable devices fabricated using the pre-strain method was not observed in our photosensors. After a 1000-cycle stretching test with a strain level of 50%, the photocurrent and photoresponsivity of the GaN-NW photosensor were measured to be 0.96 mA and 11.96 A/W, respectively, comparable to those measured before the stretching test. To evaluate the potential of our stretchable devices in practical applications, the GaN-NW photosensors were attached to the proximal interphalangeal joint of the index finger and to the back of the wrist. Photocurrents of these photosensors were monitored during movements made about these joints.
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Affiliation(s)
- Sangmoon Han
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Siyun Noh
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Jong-Woong Kim
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Cheul-Ro Lee
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
| | - Seoung-Ki Lee
- School of Materials Science and Engineering, Pusan National University, Busan 46241, South Korea
| | - Jin Soo Kim
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, South Korea
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10
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Zhang Z, Wang S, Liu X, Chen Y, Su C, Tang Z, Li Y, Xing G. Metal Halide Perovskite/2D Material Heterostructures: Syntheses and Applications. SMALL METHODS 2021; 5:e2000937. [PMID: 34927847 DOI: 10.1002/smtd.202000937] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2020] [Revised: 11/20/2020] [Indexed: 05/24/2023]
Abstract
The past decade has witnessed the great success achieved by metal halide perovskites (MHPs) in photovoltaic and related fields. However, challenges still remain in further improving their performance, as well as, settling the stability issue for future commercialization. Recently, MHP/2D material heterostructures that combining MHPs with the low-cost and solution-processable 2D materials have demonstrated unprecedented improvement in both performance and stability due to the distinctive features at hetero-interface. The diverse fabrication techniques of MHPs and 2D materials allow them to be assembled as heterostructures with different configurations in a variety of ways. Moreover, the large families of MHPs and 2D materials provide the opportunity for the rational design and modification on compositions and functionalities of MHP/2D materials heterostructures. Herein, a comprehensive review of MHP/2D material heterostructures from syntheses to applications is presented. First, various fabrication techniques for MHP/2D material heterostructures are introduced by classifying them into solid-state methods and solution-processed methods. Then the applications of MHP/2D heterostructures in various fields including photodetectors, solar cells, and photocatalysis are summarized in detail. Finally, current challenges for the development of MHP/2D material heterostructures are highlighted, and future opportunities for the advancements in this research field are also provided.
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Affiliation(s)
- Zhipeng Zhang
- International Collaborative Laboratory of 2D materials for Optoelectronic Science & Technology (ICL-2D MOST), Shenzhen University, Shenzhen, 518060, China
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, China
| | - Sisi Wang
- International Collaborative Laboratory of 2D materials for Optoelectronic Science & Technology (ICL-2D MOST), Shenzhen University, Shenzhen, 518060, China
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center of Excellence for Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Yonghua Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Chenliang Su
- International Collaborative Laboratory of 2D materials for Optoelectronic Science & Technology (ICL-2D MOST), Shenzhen University, Shenzhen, 518060, China
| | - Zikang Tang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, China
| | - Ying Li
- International Collaborative Laboratory of 2D materials for Optoelectronic Science & Technology (ICL-2D MOST), Shenzhen University, Shenzhen, 518060, China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, China
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11
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Lee EK, Baruah RK, Leem JW, Park W, Kim BH, Urbas A, Ku Z, Kim YL, Alam MA, Lee CH. Fractal Web Design of a Hemispherical Photodetector Array with Organic-Dye-Sensitized Graphene Hybrid Composites. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2004456. [PMID: 33043514 DOI: 10.1002/adma.202004456] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2020] [Revised: 08/07/2020] [Indexed: 06/11/2023]
Abstract
The vision system of arthropods consists of a dense array of individual photodetecting elements across a curvilinear surface. This compound-eye architecture could be a useful model for optoelectronic sensing devices that require a large field of view and high sensitivity to motion. Strategies that aim to mimic the compound-eye architecture involve integrating photodetector pixels with a curved microlens, but their fabrication on a curvilinear surface is challenged by the use of standard microfabrication processes that are traditionally designed for planar, rigid substrates (e.g., Si wafers). Here, a fractal web design of a hemispherical photodetector array that contains an organic-dye-sensitized graphene hybrid composite is reported to serve as an effective photoactive component with enhanced light-absorbing capabilities. The device is first fabricated on a planar Si wafer at the microscale and then transferred to transparent hemispherical domes with different curvatures in a deterministic manner. The unique structural property of the fractal web design provides protection of the device from damage by effectively tolerating various external loads. Comprehensive experimental and computational studies reveal the essential design features and optoelectronic properties of the device, followed by the evaluation of its utility in the measurement of both the direction and intensity of incident light.
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Affiliation(s)
- Eun Kwang Lee
- Weldon School of Biomedical Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Ratul Kumar Baruah
- Department of Electronics and Communication Engineering, Tezpur University, Tezpur, Assam, 784028, India
- Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Jung Woo Leem
- Weldon School of Biomedical Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Woohyun Park
- School of Mechanical Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Bong Hoon Kim
- Department of Organic Materials and Fiber Engineering, Soongsil University, Seoul, 06978, South Korea
| | - Augustine Urbas
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH, 45433, USA
| | - Zahyun Ku
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH, 45433, USA
| | - Young L Kim
- Weldon School of Biomedical Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Muhammad Ashraful Alam
- Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Chi Hwan Lee
- Weldon School of Biomedical Engineering, School of Mechanical Engineering, School of Materials Engineering, Purdue University, West Lafayette, IN, 47907, USA
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12
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Zou Y, Zou T, Zhao C, Wang B, Xing J, Yu Z, Cheng J, Xin W, Yang J, Yu W, Dong H, Guo C. A Highly Sensitive Single Crystal Perovskite-Graphene Hybrid Vertical Photodetector. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2000733. [PMID: 32410334 DOI: 10.1002/smll.202000733] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2020] [Revised: 03/26/2020] [Accepted: 04/06/2020] [Indexed: 06/11/2023]
Abstract
Organolead trihalide perovskites have attracted significant attention for optoelectronic applications due to their excellent physical properties in the past decade. Generally, both grain boundaries in perovskite films and the device structure play key roles in determining the device performance, especially for horizontal-structured device. Here, the first optimized vertical-structured photodetector with the perovskite single crystal MAPbBr3 as the light absorber and graphene as the transport layer is shown. The hybrid device combines strong photoabsorption characteristics of perovskite and high carrier mobility of flexible graphene, exhibits excellent photoresponse performance with high photoresponsivity (≈1017.1 A W-1 ) and high photodetectivity (≈2.02 × 1013 Jones) in a low light intensity (0.66 mW cm-2 ) under the actuations of 3 V bias and laser irradiation at 532 nm. In particular, an ultrahigh photoconductive gain of ≈2.37 × 103 is attained because of fast charge transfer in the graphene and large recombination lifetime in the perovskite single crystal. The vertical architecture combining perovskite crystal with highly conductive graphene offers opportunities to fulfill the synergistic effect of perovskite and 2D materials, is thus promising for developing high-performance electronic and optoelectronic devices.
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Affiliation(s)
- Yuting Zou
- The Guo Photonics Laboratory, State Key Laboratory of Applied Optics Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), Changchun, 130033, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Tingting Zou
- The Guo Photonics Laboratory, State Key Laboratory of Applied Optics Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), Changchun, 130033, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Chen Zhao
- The Guo Photonics Laboratory, State Key Laboratory of Applied Optics Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), Changchun, 130033, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Bin Wang
- The Guo Photonics Laboratory, State Key Laboratory of Applied Optics Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), Changchun, 130033, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jun Xing
- The Guo Photonics Laboratory, State Key Laboratory of Applied Optics Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), Changchun, 130033, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhi Yu
- The Guo Photonics Laboratory, State Key Laboratory of Applied Optics Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), Changchun, 130033, P. R. China
| | - Jinluo Cheng
- The Guo Photonics Laboratory, State Key Laboratory of Applied Optics Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), Changchun, 130033, P. R. China
| | - Wei Xin
- The Guo Photonics Laboratory, State Key Laboratory of Applied Optics Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), Changchun, 130033, P. R. China
| | - Jianjun Yang
- The Guo Photonics Laboratory, State Key Laboratory of Applied Optics Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), Changchun, 130033, P. R. China
| | - Weili Yu
- The Guo Photonics Laboratory, State Key Laboratory of Applied Optics Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), Changchun, 130033, P. R. China
| | - Huanli Dong
- Beijing National Laboratory for Molecular Science, Key Laboratory of Organic Solids, Beijing, 100190, P. R. China
| | - Chunlei Guo
- The Guo Photonics Laboratory, State Key Laboratory of Applied Optics Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), Changchun, 130033, P. R. China
- The Institute of Optics, University of Rochester, Rochester, NY, 14627, USA
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13
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Xia K, Wu W, Zhu M, Shen X, Yin Z, Wang H, Li S, Zhang M, Wang H, Lu H, Pan A, Pan C, Zhang Y. CVD growth of perovskite/graphene films for high-performance flexible image sensor. Sci Bull (Beijing) 2020; 65:343-349. [PMID: 36659224 DOI: 10.1016/j.scib.2019.12.015] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/17/2019] [Revised: 11/03/2019] [Accepted: 12/06/2019] [Indexed: 01/21/2023]
Abstract
Hybrid perovskite possesses excellent photoelectric properties, including large light-absorption capacity and high carrier mobility, and is an ideal light-absorbing material for photoelectric devices. The grain size and compactness of hybrid perovskite are key factors affecting the performance of photoelectric devices. The photocurrent and photoresponsivity of these devices are relatively low because of the rapidly recombined photoexcited electron-hole pairs in hybrid perovskite. Herein, we develop a facile two-step chemical vapor deposition (CVD) method to synthesize a high-quality van der Waals (vdWs) MAPbI3/graphene heterostructure for high-performance image sensor. We introduced inorganic sources (PbI2) to vdWs epitaxially grown PbI2 film on a seamless graphene monolayer film template through CVD. Methylammonium iodide (MAI) was then reintroduced to prepare the vdWs MAPbI3/graphene heterostructure. The MAPbI3 layer is composed of densely packed, large-size grains and displays a smooth surface. High photoresponsivity of 107 A/W is achieved in the corresponding photodetector. Inspired by the human visual system, we designed a flexible photodetector array containing (24 × 24) pixels, achieving perfect image recognition and color discrimination. Our study may greatly facilitate the construction of high-performance optoelectronic devices in artificial retina, biomedical imaging, remote sensing, and optical communication.
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Affiliation(s)
- Kailun Xia
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Wenqiang Wu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Mengjia Zhu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Xinyi Shen
- Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK
| | - Zhe Yin
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Haomin Wang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Shuo Li
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Mingchao Zhang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Huimin Wang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Haojie Lu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and Engineering, Hunan University, Changsha 410082, China.
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.
| | - Yingying Zhang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China.
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14
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Ghosh R, Yadav K, Kataria M, Lin HI, Paul Inbaraj CR, Liao YM, Nguyen Y, Lu CH, Hofmann M, Sankar R, Shih WH, Hsieh YP, Chen YF. Heavy Mediator at Quantum Dot/Graphene Heterojunction for Efficient Charge Carrier Transfer: Alternative Approach for High-Performance Optoelectronic Devices. ACS APPLIED MATERIALS & INTERFACES 2019; 11:26518-26527. [PMID: 31283174 DOI: 10.1021/acsami.9b08294] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional (2D) material nanocomposites have emerged as a material system for discovering new physical phenomena and developing novel devices. However, because of the low density of states of most two-dimensional materials such as graphene, the heterostructure of nanocomposites suffers from an enhanced depletion region, which can greatly reduce the efficiency of the charge carrier transfer and deteriorate the device performance. To circumvent this difficulty, here we propose an alternative approach by inserting a second 2D mediator with a heavy effective mass having a large density of states in-between the heterojunction of 2D nanocomposites. The mediator can effectively reduce the depletion region and form a type-II band alignment, which can speed up the dissociation of electron-hole pairs and enhance charge carrier transfer. To illustrate the principle, we demonstrate a novel stretchable photodetector based on the combination of graphene/ReS2/perovskite quantum dots. Two-dimensional ReS2 acts as a mediator in-between highly absorbing perovskite quantum dots and a high-mobility graphene channel and a thiol-based linker between the ReS2 and the perovskite. It is found that the optical sensitivity can be enhanced by 22 times. This enhancement was ascribed to the improvement of the charge transfer efficiency as evidenced by optical spectroscopy measurements. The produced photosensors are capable of reaching the highest reported value of photoresponsivity (>107 A W-1) and detectivity compared to previously studied stretchable devices. Mechanical robustness with tolerable strain up to 100% and excellent stability make our device ideal for future wearable electronics.
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Affiliation(s)
- Rapti Ghosh
- Department of Physics , National Central University , Chung-Li 320 , Taiwan
| | - Kanchan Yadav
- Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics , Academia Sinica , Taipei 106 , Taiwan
| | - Monika Kataria
- Department of Physics , National Central University , Chung-Li 320 , Taiwan
| | | | - Christy Roshini Paul Inbaraj
- Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics , Academia Sinica , Taipei 106 , Taiwan
- Department of Engineering and System Sciences , National Tsing Hua University , Hsinchu 30013 , Taiwan
| | - Yu-Ming Liao
- Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics , Academia Sinica , Taipei 106 , Taiwan
| | | | - Cheng-Hsin Lu
- Department of Material Sciences and Engineering , Drexel University , Philadelphia , Pennsylvania 19104 , United States
| | | | - Raman Sankar
- Institute of Physics , Academia Sinica , Taipei 11529 , Taiwan
- Centre for Condensed Matter Sciences , National Taiwan University , Taipei 10617 , Taiwan
| | - Wei-Heng Shih
- Department of Material Sciences and Engineering , Drexel University , Philadelphia , Pennsylvania 19104 , United States
| | | | - Yang-Fang Chen
- Advanced Research Centre for Green Materials Science and Technology , National Taiwan University , Taipei , Taiwan
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15
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Wang Y, Fang WH, Long R, Prezhdo OV. Symmetry Breaking at MAPbI 3 Perovskite Grain Boundaries Suppresses Charge Recombination: Time-Domain ab Initio Analysis. J Phys Chem Lett 2019; 10:1617-1623. [PMID: 30892907 DOI: 10.1021/acs.jpclett.9b00763] [Citation(s) in RCA: 46] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The influence of grain boundaries (GBs) on charge carrier lifetimes in methylammonium lead triiodide perovskite (MAPbI3) remains unclear. Some experiments suggest that GBs promote rapid nonradiative decay and deteriorate device performance, while other measurements indicate that charge recombination happens primarily in non-GB regions and that GBs facilitate charge separation and collection. By combining time-domain density functional theory and nonadiabatic (NA) molecular dynamics, we demonstrate that charge separation and localization happening at MAPbI3 GBs due to symmetry breaking suppresses charge recombination. Even though GBs lower the MAPbI3 bandgap and charge localization enhances interactions with phonons, electron-hole separation decreases the NA coupling, and the excited state lifetime remains virtually unchanged compared to the pristine perovskite. Our study rationalizes how GBs can have a positive influence on perovskite optoelectronic properties and advances fundamental understanding of charge carrier dynamics in these fascinating materials.
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Affiliation(s)
- Yutong Wang
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education , Beijing Normal University , Beijing 100875 , P. R. China
| | - Wei-Hai Fang
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education , Beijing Normal University , Beijing 100875 , P. R. China
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education , Beijing Normal University , Beijing 100875 , P. R. China
| | - Oleg V Prezhdo
- Department of Chemistry , University of Southern California , Los Angeles , California 90089 , United States
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16
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Hong Z, Zhao J, Li S, Cheng B, Xiao Y, Lei S. Tunable hysteresis behaviour related to trap filling dependence of surface barrier in an individual CH 3NH 3PbI 3 micro/nanowire. NANOSCALE 2019; 11:3360-3369. [PMID: 30724937 DOI: 10.1039/c8nr08934e] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Hybrid organic-inorganic perovskite (HOIP) materials have remarkable potential in solar cells owing to their high power conversion efficiency and inexpensive preparation. However, their current-voltage (I-V) curves often exhibit hysteresis characteristics, which not only strongly affect the accuracy of measurements but also seriously impair device performance, and, moreover, their actual origin is still the subject of debate. Here, a single HOIP micro/nanowire-based two-terminal device was constructed. Not only can its hysteresis properties be accurately modulated, but also their origin can clearly be identified as variations in the surface barrier related to trap filling. Under illumination of the entire device with visible (VIS) light, two anticlockwise hysteresis loops appear symmetrically in cyclic I-V curves. Interestingly, the cyclic I-V curves can be switchably changed into asymmetrical "8"-shaped hysteresis loops with bipolar resistive switching (RS) features when only the vicinity of one electrode is illuminated. The traps located in the surface space charge region play a crucial role in the tunable hysteresis behaviour. Owing to the presence of abundant surface states, two back-to-back connected diodes related to the surface barrier can be formed in the two-terminal device. With the synergistic assistance of illumination and bias, moreover, the injection and extraction of holes in the surface space charge region can effectively modulate the surface barrier, which triggers the formation of a bipolar RS device. Accordingly, two switchable back-to-back connected bipolar RS devices were built. Regarding the tunable hysteresis with nonvolatile memory properties controlled by the synergistic action of bias and illumination, our results provide a valuable insight into the identification of its origin and, furthermore, also indicate that the HOIP materials have significant potential in nonvolatile memory applications.
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Affiliation(s)
- Zhen Hong
- School of Materials Science and Engineering, Nanchang University, Jiangxi 330031, P. R. China.
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