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Gu J, Wang C, Xu X, Xiao L, Li J, Zhao J, Zou G. Efficient molecular ferroelectric photovoltaic device with high photocurrent via lewis acid-base adduct approach. NANOTECHNOLOGY 2022; 33:405402. [PMID: 35617939 DOI: 10.1088/1361-6528/ac73a7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2022] [Accepted: 05/26/2022] [Indexed: 06/15/2023]
Abstract
Traditional inorganic oxide ferroelectric materials usually have band gaps above 3 eV, leading to more than 80% of the solar spectrum unavailable, greatly limiting the current density of their devices just atμA cm-2level. Therefore, exploring ferroelectric materials with lower band gaps is considered as an effective method to improve the performance of ferroelectric photovoltaic devices. Inorganic ferroelectric materials are often doped with transition metal elements to reduce the band gap, which is a complex doping and high temperature fabrication process. Recently, molecular ferroelectric materials can change the symmetry and specific interactions of crystals at the molecular level by chemically modifying or tailoring cations with high symmetry, enabling rational design and banding of ferroelectricity in the framework of perovskite simultaneously. Therefore, the molecular ferroelectric materials have a great performance for both excellent ferroelectricity and narrow band gap without doping. Here, we report a ferroelectric photovoltaic device employing an organic-inorganic hybrid molecular ferroelectric material with a band gap of 2.3 eV to obtain high current density. While the poor film quality of molecular ferroelectrics still limits it. The Lewis acid-base adduct is found to greatly improve the film quality with lower defect density and higher carrier mobility. Under standard AM 1.5 G illumination, the photocurrents of ∼1.51 mA cm-2is achieved along with a device efficiency of 0.45%. This work demonstrates new possibilities for the application of molecular ferroelectric films with narrow band gaps in photovoltaic devices, and lays a foundation for Lewis acid-base chemistry to improve the quality of molecular ferroelectric thin films to obtain high current densities and device performance.
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Affiliation(s)
- Jiahao Gu
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Material and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
| | - Chen Wang
- College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao, 266590, People's Republic of China
| | - Xiaoli Xu
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Material and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
| | - Lingbo Xiao
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Material and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
| | - Jun Li
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Material and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
| | - Jie Zhao
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Material and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
| | - Guifu Zou
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Material and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
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Himcinschi C, Drechsler F, Walch DS, Bhatnagar A, Belik AA, Kortus J. Unexpected Phonon Behaviour in BiFe xCr 1-xO 3, a Material System Different from Its BiFeO 3 and BiCrO 3 Parents. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1607. [PMID: 35564316 PMCID: PMC9100047 DOI: 10.3390/nano12091607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2022] [Revised: 05/05/2022] [Accepted: 05/05/2022] [Indexed: 02/04/2023]
Abstract
The dielectric function and the bandgap of BiFe0.5Cr0.5O3 thin films were determined from spectroscopic ellipsometry and compared with that of the parent compounds BiFeO3 and BiCrO3. The bandgap value of BiFe0.5Cr0.5O3 is lower than that of BiFeO3 and BiCrO3, due to an optical transition at ~2.27 eV attributed to a charge transfer excitation between the Cr and Fe ions. This optical transition enables new phonon modes which have been investigated using Raman spectroscopy by employing multi-wavelengths excitation. The appearance of a new Raman mode at ~670 cm-1 with a strong intensity dependence on the excitation line and its higher order scattering activation was found for both BiFe0.5Cr0.5O3 thin films and BiFexCr1-xO3 polycrystalline bulk samples. Furthermore, Raman spectroscopy was also used to investigate temperature induced structural phase transitions in BiFe0.3Cr0.7O3.
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Affiliation(s)
- Cameliu Himcinschi
- Institute of Theoretical Physics, TU Bergakademie Freiberg, D-09596 Freiberg, Germany; (F.D.); (J.K.)
| | - Felix Drechsler
- Institute of Theoretical Physics, TU Bergakademie Freiberg, D-09596 Freiberg, Germany; (F.D.); (J.K.)
| | - David Sebastian Walch
- Zentrum für Innovationskompetenz SiLi-nano, Martin-Luther-Universität Halle-Wittenberg, D-06120 Halle (Saale), Germany; (D.S.W.); (A.B.)
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, D-06120 Halle (Saale), Germany
| | - Akash Bhatnagar
- Zentrum für Innovationskompetenz SiLi-nano, Martin-Luther-Universität Halle-Wittenberg, D-06120 Halle (Saale), Germany; (D.S.W.); (A.B.)
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, D-06120 Halle (Saale), Germany
| | - Alexei A. Belik
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Ibaraki, Tsukuba 305-0044, Japan;
| | - Jens Kortus
- Institute of Theoretical Physics, TU Bergakademie Freiberg, D-09596 Freiberg, Germany; (F.D.); (J.K.)
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Guo K, Wang X, Zhang R, Fu Z, Zhang L, Ma G, Deng C. Multiferroic oxide BFCNT/BFCO heterojunction black silicon photovoltaic devices. LIGHT, SCIENCE & APPLICATIONS 2021; 10:201. [PMID: 34565801 PMCID: PMC8473570 DOI: 10.1038/s41377-021-00644-0] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/09/2021] [Revised: 08/18/2021] [Accepted: 09/10/2021] [Indexed: 06/13/2023]
Abstract
Multiferroics are being studied increasingly in applications of photovoltaic devices for the carrier separation driven by polarization and magnetization. In this work, textured black silicon photovoltaic devices are fabricated with Bi6Fe1.6Co0.2Ni0.2Ti3O18/Bi2FeCrO6 (BFCNT/BFCO) multiferroic heterojunction as an absorber and graphene as an anode. The structural and optical analyses showed that the bandgap of Aurivillius-typed BFCNT and double perovskite BFCO are 1.62 ± 0.04 eV and 1.74 ± 0.04 eV respectively, meeting the requirements for the active layer in solar cells. Under the simulated AM 1.5 G illumination, the black silicon photovoltaic devices delivered a photoconversion efficiency (η) of 3.9% with open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF) of 0.75 V, 10.8 mA cm-2, and 48.3%, respectively. Analyses of modulation of an applied electric and magnetic field on the photovoltaic properties revealed that both polarization and magnetization of multiferroics play an important role in tuning the built-in electric field and the transport mechanisms of charge carriers, thus providing a new idea for the design of future high-performance multiferroic oxide photovoltaic devices.
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Affiliation(s)
- Kaixin Guo
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, Guizhou, China
| | - Xu Wang
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, Guizhou, China
| | - Rongfen Zhang
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, Guizhou, China
| | - Zhao Fu
- Guizhou College of Electronic Science and Technology, Guiyang, 561113, Guizhou, China
| | - Liangyu Zhang
- Guizhou College of Electronic Science and Technology, Guiyang, 561113, Guizhou, China
| | - Guobin Ma
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, Guizhou, China
| | - Chaoyong Deng
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, Guizhou, China.
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Guo K, Zhang R, Fu Z, Zhang L, Wang X, Deng C. Regulation of Photovoltaic Response in ZSO-Based Multiferroic BFCO/BFCNT Heterojunction Photoelectrodes via Magnetization and Polarization. ACS APPLIED MATERIALS & INTERFACES 2021; 13:35657-35663. [PMID: 34309370 DOI: 10.1021/acsami.1c07534] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Multiferroic devices have attracted renewed attention in applications of photovoltaic devices for their efficient carrier separation driven by internal polarization, magnetization, and above-bandgap generated photovoltages. In this work, Zn2SnO4-based multiferroic Bi6Fe1.6Co0.2Ni0.2Ti3O18/Bi2FeCrO6 (BFCNT/BFCO) heterojunction photoelectrodes were fabricated. Structural and optical analyses showed that the bandgap of the spinel Zn2SnO4 is ∼3.1 eV while those of Aurivillius-type BFCNT and double-perovskite BFCO are 1.62 and 1.74 eV, respectively. Under the simulated AM 1.5G illumination, the as-prepared photoelectrodes delivered a photoconversion efficiency (η) of 3.40% with a short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) of 10.3 mA·cm-2, 0.66 V, and 50.4%, respectively. Analyses of adjustment of an applied electric and magnetic field on photovoltaic properties indicated that both magnetization and polarization of multiferroics can effectively tune the built-in electric field and the transport of charge carriers, providing a new idea for the design of future high-performance multiferroic oxide photovoltaic devices.
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Affiliation(s)
- Kaixin Guo
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, Guizhou, China
| | - Rongfen Zhang
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, Guizhou, China
| | - Zhao Fu
- Guizhou College of Electronic Science and Technology, Guiyang 561113, Guizhou, China
| | - Liangyu Zhang
- Guizhou College of Electronic Science and Technology, Guiyang 561113, Guizhou, China
| | - Xu Wang
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, Guizhou, China
| | - Chaoyong Deng
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, Guizhou, China
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Long X, Tan H, Sánchez F, Fina I, Fontcuberta J. Non-volatile optical switch of resistance in photoferroelectric tunnel junctions. Nat Commun 2021; 12:382. [PMID: 33452259 PMCID: PMC7810721 DOI: 10.1038/s41467-020-20660-9] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/15/2020] [Accepted: 12/14/2020] [Indexed: 01/29/2023] Open
Abstract
In the quest for energy efficient and fast memory elements, optically controlled ferroelectric memories are promising candidates. Here, we show that, by taking advantage of the imprint electric field existing in the nanometric BaTiO3 films and their photovoltaic response at visible light, the polarization of suitably written domains can be reversed under illumination. We exploit this effect to trigger and measure the associate change of resistance in tunnel devices. We show that engineering the device structure by inserting an auxiliary dielectric layer, the electroresistance increases by a factor near 2 × 103%, and a robust electric and optic cycling of the device can be obtained mimicking the operation of a memory device under dual control of light and electric fields.
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Affiliation(s)
- Xiao Long
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia, Spain
| | - Huan Tan
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia, Spain
| | - Florencio Sánchez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia, Spain
| | - Ignasi Fina
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia, Spain.
| | - Josep Fontcuberta
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia, Spain.
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