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Sutorius A, Weißing R, Rindtorff Pèrez C, Fischer T, Hartl F, Basu N, Shin HS, Mathur S. Understanding vapor phase growth of hexagonal boron nitride. NANOSCALE 2024; 16:15782-15792. [PMID: 39118450 DOI: 10.1039/d4nr02624a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/10/2024]
Abstract
Hexagonal boron nitride (hBN), with its atomically flat structure, excellent chemical stability, and large band gap energy (∼6 eV), serves as an exemplary 2D insulator in electronics. Additionally, it offers exceptional attributes for the growth and encapsulation of semiconductor transition metal dichalcogenides (TMDCs). Current methodologies for producing hBN thin films primarily involve exfoliating multi-layer or bulk crystals and thin film growth via chemical vapor deposition (CVD), which entails the thermal decomposition and surface reaction of molecular precursors like ammonia boranes (NH3BH3) and borazine (B3N3H6). These molecular precursors contain pre-existing B-N bonds, thus promoting the nucleation of BN. However, the quality and phase purity of resulting BN films are greatly influenced by the film preparation and deposition process conditions that remain a substantial concern. This study aims to comprehensively investigate the impact of varied CVD systems, parameters, and precursor chemistry on the synthesis of high-quality, large scale hBN on both catalytic and non-catalytic substrates. The comparative analysis provided new insights into most effective approaches concerning both quality and scalability of vapor phase grown hBN films.
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Affiliation(s)
- Anja Sutorius
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
| | - René Weißing
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
| | - Carina Rindtorff Pèrez
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
| | - Thomas Fischer
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
| | - Fabian Hartl
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
| | - Nilanjan Basu
- Center for 2D Quantum Heterostructures, Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hyeon Suk Shin
- Center for 2D Quantum Heterostructures, Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Sanjay Mathur
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
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Sengottaiyan C, Hara M, Nagata H, Mitsuboshi H, Jeganathan C, Yoshimura M. Large-Area Synthesis and Fabrication of Few-Layer hBN/Monolayer RGO Heterostructures for Enhanced Contact Surface Potential. ACS OMEGA 2024; 9:26307-26315. [PMID: 38911715 PMCID: PMC11190914 DOI: 10.1021/acsomega.4c02219] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/06/2024] [Revised: 04/28/2024] [Accepted: 05/08/2024] [Indexed: 06/25/2024]
Abstract
Hexagonal boron nitride (hBN) has a property similar to that of graphene, and it has become one of the most popular materials due to its flexible physical and chemical properties for a variety of applications, especially in nanoelectronics. Enhanced properties of hBN-based heterostructures are crucial for future electronic devices. In this work, a sheet-like hBN crystal was synthesized and transferred onto SiO2/Si substrate and reduced graphene oxide (RGO)/SiO2/Si substrate. Accordingly, the hBN and hBN/RGO films are investigated by optical microscopy, X-ray diffraction, high-resolution transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. The thickness of a single hBN layer is approximately 0.4 nm. A few layers of hBN stacked in large areas are mostly observed in both hBN and the hBN/RGO films. By using Kelvin probe force microscopy, it was found that the hBN/RGO heterostructure has a contact surface potential higher than that of the hBN layer. The large-scale synthesis and fabrication of hBN/RGO films could be extended to fabricate other van der Waals heterostructures.
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Affiliation(s)
| | - Masanori Hara
- Toyota Technological Institute,
Tempaku, Nagoya, Aichi 468-8511, Japan
| | - Hiroki Nagata
- Toyota Technological Institute,
Tempaku, Nagoya, Aichi 468-8511, Japan
| | - Hibiki Mitsuboshi
- Toyota Technological Institute,
Tempaku, Nagoya, Aichi 468-8511, Japan
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Kwak HM, Kim J, Lee JS, Kim J, Baik J, Choi SY, Shin S, Kim JS, Mun SH, Kim KP, Oh SH, Lee DS. 2D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59025-59036. [PMID: 38084630 DOI: 10.1021/acsami.3c14076] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/22/2023]
Abstract
The production of freestanding membranes using two-dimensional (2D) materials often involves techniques such as van der Waals (vdW) epitaxy, quasi-vdW epitaxy, and remote epitaxy. However, a challenge arises when attempting to manufacture freestanding GaN by using these 2D-material-assisted growth techniques. The issue lies in securing stability, as high-temperature growth conditions under metal-organic chemical vapor deposition (MOCVD) can cause damage to the 2D materials due to GaN decomposition of the substrate. Even when GaN is successfully grown using this method, damage to the 2D material leads to direct bonding with the substrate, making the exfoliation of the grown GaN nearly impossible. This study introduces an approach for GaN growth and exfoliation on 2D material/GaN templates. First, graphene and hexagonal boron nitride (h-BN) were transferred onto the GaN template, creating stable conditions under high temperatures and various gases in MOCVD. GaN was grown in a two-step process at 750 and 900 °C, ensuring exfoliation in cases where the 2D materials remained intact. Essentially, while it is challenging to grow GaN on 2D material/GaN using only MOCVD, this study demonstrates that with effective protection of the 2D material, the grown GaN can endure high temperatures and still be exfoliated. Furthermore, these results support that vdW epitaxy and remote epitaxy principle are not only possible with specific equipment but also applicable generally.
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Affiliation(s)
- Hoe-Min Kwak
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Jongil Kim
- Department of Energy Engineering, Institute for Energy Materials and Devices, Korea Institute of Energy Technology (KENTECH), 200 Hyeoksin-ro, Naju 58330, Republic of Korea
| | - Je-Sung Lee
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Jeongwoon Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Jaeyoung Baik
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Soo-Young Choi
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Sunwoo Shin
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Jin-Soo Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Seung-Hyun Mun
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Kyung-Pil Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Sang Ho Oh
- Department of Energy Engineering, Institute for Energy Materials and Devices, Korea Institute of Energy Technology (KENTECH), 200 Hyeoksin-ro, Naju 58330, Republic of Korea
| | - Dong-Seon Lee
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
- Department of Semiconductor Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
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Surana M, Ananthakrishnan G, Poss MM, Yaacoub JJ, Zhang K, Ahmed T, Admal NC, Pochet P, Johnson HT, Tawfick S. Strain-Driven Faceting of Graphene-Catalyst Interfaces. NANO LETTERS 2023; 23:1659-1665. [PMID: 36745111 DOI: 10.1021/acs.nanolett.2c03911] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The interfacial interaction of 2D materials with the substrate leads to striking surface faceting affecting its electronic properties. Here, we quantitatively study the orientation-dependent facet topographies observed on the catalyst under graphene using electron backscatter diffraction and atomic force microscopy. The original flat catalyst surface transforms into two facets: a low-energy low-index surface, e.g. (111), and a vicinal (high-index) surface. The critical role of graphene strain, besides anisotropic interfacial energy, in forming the observed topographies is revealed by molecular simulations. These insights are applicable to other 2D/3D heterostructures.
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Affiliation(s)
- Mitisha Surana
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
| | - Ganesh Ananthakrishnan
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
| | - Matthew M Poss
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
| | - Jad Jean Yaacoub
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
| | - Kaihao Zhang
- The Hong Kong University of Science and Technology, Guangzhou999077, Hong Kong, China
| | - Tusher Ahmed
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
| | - Nikhil Chandra Admal
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
| | - Pascal Pochet
- Department of Physics, IriG, Univ. Grenoble-Alpes and CEA, GrenobleF-38054, France
| | - Harley T Johnson
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
| | - Sameh Tawfick
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana61801, Illinois, USA
- The Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois61801, USA
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Dimitropoulos M, Trakakis G, Androulidakis C, Kotsidi M, Galiotis C. Wrinkle-mediated CVD synthesis of wafer scale Graphene/h-BN heterostructures. NANOTECHNOLOGY 2022; 34:025601. [PMID: 36215949 DOI: 10.1088/1361-6528/ac98d0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2022] [Accepted: 10/10/2022] [Indexed: 06/16/2023]
Abstract
The combination of two-dimensional materials (2D) into heterostructures enables their integration in tunable ultrathin devices. For applications in electronics and optoelectronics, direct growth of wafer-scale and vertically stacked graphene/hexagonal boron nitride (h-BN) heterostructures is vital. The fundamental problem, however, is the catalytically inert nature of h-BN substrates, which typically provide a low rate of carbon precursor breakdown and consequently a poor rate of graphene synthesis. Furthermore, out-of-plane deformations such as wrinkles are commonly seen in 2D materials grown by chemical vapor deposition (CVD). Herein, a wrinkle-facilitated route is developed for the fast growth of graphene/h-BN vertical heterostructures on Cu foils. The key advantage of this synthetic pathway is the exploitation of the increased reactivity from inevitable line defects arising from the CVD process, which can act as active sites for graphene nucleation. The resulted heterostructures are found to exhibit superlubric properties with increased bending stiffness, as well as directional electronic properties, as revealed from atomic force microscopy measurements. This work offers a brand-new route for the fast growth of Gr/h-BN heterostructures with practical scalability, thus propelling applications in electronics and nanomechanical systems.
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Affiliation(s)
- Marinos Dimitropoulos
- Department of Chemical Engineering, University of Patras, GR-26500 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - George Trakakis
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - Charalampos Androulidakis
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - Maria Kotsidi
- Department of Chemical Engineering, University of Patras, GR-26500 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - Costas Galiotis
- Department of Chemical Engineering, University of Patras, GR-26500 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
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Hwang JH, Shrestha BK, Kim JH, Seo TH, Park CH, Kim MJ. Nanoscale layer of a minimized defect area of graphene and hexagonal boron nitride on copper for excellent anti-corrosion activity. NANOTECHNOLOGY 2021; 33:055601. [PMID: 34673562 DOI: 10.1088/1361-6528/ac31e9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2021] [Accepted: 10/21/2021] [Indexed: 06/13/2023]
Abstract
In this work, we synthesized a monolayer of graphene and hexagonal boron nitride (hBN) using chemical vapor deposition. The physicochemical and electrochemical properties of the materials were evaluated to determine their morphology. High-purity materials and their atomic-scale coating on copper (Cu) foil were employed to prevent fast degradation rate. The hexagonal two-dimensional (2D) atomic structures of the as-prepared materials were assessed to derive their best anti-corrosion behavior. The material prepared under optimized conditions included edge-defect-free graphene nanosheets (∼0.0034μm2) and hBN (∼0.0038μm2) per unit area of 1μm2. The coating of each material on the Cu surface significantly reduced the corrosion rate, which was ∼2.44 × 10-2/year and 6.57 × 10-3/year for graphene/Cu and hBN/Cu, respectively. Importantly, the corrosion rate of Cu was approximately 3-fold lower after coating with hBN relative to that of graphene/Cu. This approach suggests that the surface coating of Cu using cost-effective, eco-friendly, and the most abundant materials in nature is of interest for developing marine anti-corrosion micro-electronic devices and achieving surface modification of pure metals in industrial applications.
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Affiliation(s)
- Jae Hun Hwang
- Department of Bionanosystem Engineering, Graduate School, Jeonbuk National University, Jeonju 561-756, Republic of Korea
- Korea Institute of Interventional Mechanobio Technology (KIMET), Jeonju, 54896, Republic of Korea
| | - Bishnu Kumar Shrestha
- Department of Bionanosystem Engineering, Graduate School, Jeonbuk National University, Jeonju 561-756, Republic of Korea
- Regional Leading Research Center for Nanocarbon-based Energy Materials and Application Technology, Jeonbuk National University, Republic of Korea
| | - Jun Hee Kim
- Korea Institute of Interventional Mechanobio Technology (KIMET), Jeonju, 54896, Republic of Korea
| | - Tae Hoon Seo
- Green Energy & Nano Technology R&D Group, Korea Institute of Industrial Technology, 6, Cheomdangwagi-ro 208beon-gil, Buk-gu, Gwangju 61012, Republic of Korea
| | - Chan Hee Park
- Department of Bionanosystem Engineering, Graduate School, Jeonbuk National University, Jeonju 561-756, Republic of Korea
- Division of Mechanical Design Engineering, Jeonbuk National University, Jeonju 561-756, Republic of Korea
| | - Myung Jong Kim
- Department of Chemistry, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
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Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes. APPLIED SCIENCES-BASEL 2021. [DOI: 10.3390/app11199321] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Abstract
We introduce a low temperature process for coating InGaN/GaN light-emitting diodes (LEDs) with h-BN as a passivation layer. The effect of h-BN on device performance and reliability is investigated. At −5 V, the leakage current of the h-BN passivated LED was −1.15 × 10−9 A, which was one order lower than the reference LED’s leakage current of −1.09 × 10−8 A. The h-BN layer minimizes the leakage current characteristics and operating temperature by acting as a passivation and heat dispersion layer. With a reduced working temperature of 33 from 45 °C, the LED lifetime was extended 2.5 times following h-BN passivation. According to our findings, h-BN passivation significantly improves LED reliability.
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Hou L, Zhang Q, Tweedie M, Shautsova V, Sheng Y, Zhou Y, Huang H, Chen T, Warner JH. Photocurrent Direction Control and Increased Photovoltaic Effects in All-2D Ultrathin Vertical Heterostructures Using Asymmetric h-BN Tunneling Barriers. ACS APPLIED MATERIALS & INTERFACES 2019; 11:40274-40282. [PMID: 31618001 DOI: 10.1021/acsami.9b13404] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) materials are atomically thick and without out-of-plane dangling bonds. As a result, they could break the confinement of lattice matching, and thus can be freely mixed and matched together to construct vertical van der Waals heterostructures. Here, we demonstrated an asymmetrical vertical structure of graphene/hexagonal boron nitride (h-BN)/tungsten disulfide (WS2)/graphene using all chemical vapor deposition grown 2D materials. Three building blocks are utilized in this construction: conductive graphene as a good alternative for the metal electrode due to its tunable Fermi level and ultrathin nature, semiconducting transition-metal dichalcogenides (TMDs) as an ultrathin photoactive material, and insulating h-BNas a tunneling barrier. Such an asymmetrical vertical structure exhibits a much stronger photovoltaic effect than the symmetrical vertical one without h-BN. By changing the sequence of h-BN in the vertical stack, we could even control the electron flow direction. Also, improvement has been further made by increasing the thickness of h-BN. The photovoltaic effect is attributed to different possibilities of excited electrons on TMDs to migrate to top and bottom graphene electrodes, which is caused by potential differences introduced by an insulating h-BN layer. This study shows that h-BN could be effectively used as a tunneling barrier in the asymmetrical vertical heterostructure to improve photovoltaic effect and control the electron flow direction, which is crucial for the design of other 2D vertical heterostructures to meet various needs of electronic and optoelectronic devices.
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Affiliation(s)
- Linlin Hou
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Qianyang Zhang
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Martin Tweedie
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Viktoryia Shautsova
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Yuewen Sheng
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Yingqiu Zhou
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Hefu Huang
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Tongxin Chen
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
| | - Jamie H Warner
- Department of Materials , University of Oxford , Parks Road , Oxford OX1 3PH , United Kingdom
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Chen W, Gui X, Yang L, Zhu H, Tang Z. Wrinkling of two-dimensional materials: methods, properties and applications. NANOSCALE HORIZONS 2019; 4:291-320. [PMID: 32254086 DOI: 10.1039/c8nh00112j] [Citation(s) in RCA: 56] [Impact Index Per Article: 11.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, two-dimensional (2D) materials, including graphene, its derivatives, metal films, MXenes and transition metal dichalcogenides (TMDs), have been widely studied because of their tunable electronic structures and special electrical and optical properties. However, during the fabrication of these 2D materials with atomic thickness, formation of wrinkles or folds is unavoidable to enable their stable existence. Meaningfully, it is found that wrinkled structures simultaneously impose positive changes on the 2D materials. Specifically, the architecture of wrinkled structures in 2D materials additionally induces excellent properties, which are of great importance for their practical applications. In this review, we provide an overview of categories of 2D materials, which contains formation and fabrication methods of wrinkled patterns and relevant mechanisms, as well as the induced mechanical, electrical, thermal and optical properties. Furthermore, these properties are modifiable by controlling the surface topography or even by dynamically stretching the 2D materials. Wrinkling offers a platform for 2D materials to be applied in some promising fields such as field emitters, energy containers and suppliers, field effect transistors, hydrophobic surfaces, sensors for flexible electronics and artificial intelligence. Finally, the opportunities and challenges of wrinkled 2D materials in the near future are discussed.
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Affiliation(s)
- Wenjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
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