Resonant energy transfer in a van der Waals stacked MoS2 - functionalized graphene quantum dot composite with ab initio validation

Possible charge ordering and anomalous transport in graphene/graphene quantum dot heterostructure

Observations of superconductivity and charge density waves (CDW) in graphene have been elusive thus far due to weak electron-phonon coupling (EPC) interactions. Here, we report a unique observation of anomalous transport and multiple charge ordering phases at high temperatures (T1∼213K,T2∼325K) in a 0D-2D van der Waals (vdW) heterostructure comprising of single layer graphene (SLG) and functionalized (amine) graphene quantum dots (GQD). The presence of functionalized GQD contributed to charge transfer with shifting of the Dirac point ∼ 0.05 eV above the Fermi level (ab initio   simulations) and carrier densityn∼-0.3×1012 cm-2confirming p-doping in SLG and two-fold increase in EPC interaction was achieved. Moreover, we elucidate the interplay between electron-electron and electron-phonon interactions to substantiate high temperature EPC driven charge ordering in the heterostructure through analyses of magnetotransport and weak anti-localization (WAL) framework. Our results provide impetus to investigate strongly correlated phenomena such as CDW and superconducting phase transitions in novel graphene based heterostructures.

Probing the charge transfer and electron-hole asymmetry in graphene-graphene quantum dot heterostructure

In recent years, graphene-based van der Waals (vdW) heterostructures have come into prominence showcasing interesting charge transfer dynamics which is significant for optoelectronic applications. These novel structures are highly tunable depending on several factors such as the combination of the two-dimensional materials, the number of layers and band alignment exhibiting interfacial charge transfer dynamics. Here, we report on a novel graphene based 0D-2D vdW heterostructure between graphene and amine-functionalized graphene quantum dots (GQD) to investigate the interfacial charge transfer and doping possibilities. Using a combination ofab initiosimulations and Kelvin probe force microscopy (KPFM) measurements, we confirm that the incorporation of functional GQDs leads to a charge transfer induced p-type doping in graphene. A shift of the Dirac point by 0.05 eV with respect to the Fermi level (E_F) in the graphene from the heterostructure was deduced from the calculated density of states. KPFM measurements revealed an increment in the surface potential of the GQD in the 0D-2D heterostructure by 29 mV with respect to graphene. Furthermore, we conducted power dependent Raman spectroscopy for both graphene and the heterostructure samples. An optical doping-induced gating effect resulted in a stiffening of theGband for electrons and holes in both samples (graphene and the heterostructure), suggesting a breakdown of the adiabatic Born-Oppenheimer approximation. Moreover, charge imbalance and renormalization of the electron-hole dispersion under the additional influence of the doped functional GQDs is pointing to an asymmetry in conduction and carrier mobility.

The role of sodium dodecyl sulfate mediated hydrothermal synthesis of MoS2 nanosheets for photocatalytic dye degradation and dye-sensitized solar cell application

The novel properties and exciting behavior of two-dimensional nanosheet-based materials have piqued the interest of research all over the world. In this study, bulk molybdenum disulfide (bulk MoS₂) and sodium dodecyl sulfate-mediated molybdenum disulfide nanosheets (MoS₂-SDS NS) were synthesized via a facile sonication and hydrothermal process. The findings from the characterization revealed that the addition of sodium dodecyl sulfate (SDS) surfactant reduces the crystal phase and changes the structural morphology of bulk MoS₂. Furthermore, the photocatalytic and photovoltaic performance of bulk MoS₂ and MoS₂-SDS NS were also investigated. The results show that by using methylene blue dye, the photocatalytic efficiency increased from 56.30% to 91.84% at 150 min under UV-Visible light irradiation, and the photo-conversion efficiency (PEC (%)) of the dye-sensitized solar cell increased from 1.47% to 3.81% for bulk MoS₂ and MoS₂-SDS NS, respectively. Finally, we discussed in-depth the effect of SDS surfactants on MoS₂, which can improve their photovoltaic and photocatalytic performance.

Probing the emission dynamics in nitrogen doped carbon dots by reversible capping with mercury (II) through surface chemistry

In this study, the mechanistic insight and emission dynamics have been explored of size dependent nitrogen doped carbon quantum dots (namely 3A,3B & 3C) with toxic metal Hg2+ ions via...

Tunable Ultrafast Nonlinear Optical Properties of Graphene/MoS2 van der Waals Heterostructures and Their Application in Solid-State Bulk Lasers

For van der Waals (vdW) heterostructures, optical and electrical properties ( e.g., saturable absorption and carrier dynamics) are strongly modulated by interlayer coupling, which may be due to effective charge transfer and band structure recombination. General theoretical studies have shown that the complementary properties of graphene and MoS₂ enable the graphene/MoS₂ (G/MoS₂) heterostructure to be used as an important building block for various optoelectronic devices. Here, density functional theory was used to calculate the work function values of G/MoS₂ with different thicknesses of MoS₂, and its relaxation dynamic mechanism was illustrated. The results reveal that the G/MoS₂ heterostructure interlayer coupling can be tuned by changing the thickness of MoS₂, furthering the understanding of the fundamental charge-transfer mechanism in few-layer G/MoS₂ heterostructures. The tunable carrier dynamics and saturable absorption were investigated by pump-probe spectroscopy and open-aperture Z-scan technique, respectively. In the experiments, we compared the performances of Q-switched lasers based on G/MoS₂ heterostructures with different MoS₂ layers. Taking advantage of ultrafast recovery time and good saturable absorption properties, a femtosecond solid-state laser at 1.0 μm with G/MoS₂ heterostructure saturable absorber was successfully achieved. This study on interlayer coupling in G/MoS₂ may allow various vdW heterostructures with controllable stacking to be fabricated and shows the promising applications of vdW heterostructures for ultrafast photonic devices.