1
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Li YT, Prakoso SP, Hsu LC, Xu XN, Hung CC, Chen YL, Wu YH, Chen WC, Lin BH, Chiu YC. Controlled Growth of Highly Oriented Perovskite Crystals in Polymer Solutions via Selective Solvent Vapor Diffusion. Macromol Rapid Commun 2023; 44:e2300382. [PMID: 37703910 DOI: 10.1002/marc.202300382] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Revised: 08/27/2023] [Indexed: 09/15/2023]
Abstract
Organic-inorganic hybrid perovskites have garnered significant attention in optoelectronics owing to their outstanding tunable optical characteristics. Controlled growth of perovskite nanocrystals from solutions is key for controlling the emission intensity and photoluminescence lifetime of perovskites. In particular, most studies have focused on controlling the crystallization of perovskite through chemical treatment using chelating ligands or physical treatment via antisolvent diffusion, and there exists a trade-off between the photoluminescence intensity and lifetime of perovskites. Herein, a selective solvent vapor-assisted crystallization with the aid of a functional polymer, which nanoscale perovskite crystals are grown andante from precursor solution, is presented for tuning the crystallization and optical properties of a common halide perovskite, methylammonium lead bromide (MAPbBr3 ). The proposed method here produces perovskite nanocrystals in the range of 200-300 nm. The spin-coated thin film formed from the perovskite solution exhibits strong green photoluminescence with a long lifetime. The effects of the functional group and polymer dosage on the crystallization of MAPbBr3 are systematically investigated, and the crystallization mechanism is explained based on a modified LaMer model. This study provides an advanced solution process for precisely controlling perovskite crystallization to enhance their optical properties for next-generation optoelectronic devices.
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Affiliation(s)
- Yen-Ting Li
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Da'an Dist., Taipei, 10607, Taiwan
| | - Suhendro Purbo Prakoso
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Da'an Dist., Taipei, 10607, Taiwan
| | - Li-Che Hsu
- Institute of Polymer Science and Engineering, National Taiwan University, No.1, Sec. 4, Roosevelt Road, Taipei, 10617, Taiwan
| | - Xin-Ni Xu
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Da'an Dist., Taipei, 10607, Taiwan
| | - Chih-Chien Hung
- Department of Chemical Engineering, National Taiwan University, No.1, Sec. 4, Roosevelt Road, Taipei, 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Ya-Ling Chen
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Da'an Dist., Taipei, 10607, Taiwan
| | - Yu-Hao Wu
- National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, No.1, Sec. 4, Roosevelt Road, Taipei, 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Bi-Hsuan Lin
- National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan
| | - Yu-Cheng Chiu
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Da'an Dist., Taipei, 10607, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
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2
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Ercan E, Lin YC, Yang YF, Lin BH, Shimizu H, Inagaki S, Higashihara T, Chen WC. Tailoring Wavelength-Adaptive Visual Neuroplasticity Transitions of Synaptic Transistors Comprising Rod-Coil Block Copolymers for Dual-Mode Photoswitchable Learning/Forgetting Neural Functions. ACS APPLIED MATERIALS & INTERFACES 2023; 15:46157-46170. [PMID: 37728642 DOI: 10.1021/acsami.3c11441] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/21/2023]
Abstract
The vision-inspired artificial neural network based on optical synapses has drawn a tremendous amount of attention for emulating biological senses. Although photoexcitation-induced synaptic functionalities have been widely studied, optical habituation via the photoinhibitory pathway is yet to be demonstrated for sophisticated biomimetic visual adaptive systems. Here, the first optical neuromorphic block copolymer (BCP) phototransistor is demonstrated as an all-optical operation responding to various wavelengths, fulfilling photoassisted dynamic learning/forgetting cycles via optical potentiation without gate bias. The polyfluorene BCPs were precisely designed to enable wavelength-adaptive responses, benefiting from interfacial semiconductor/electret morphology and the crystallinity/electron affinity of the BCPs. Notably, this is the first work to simultaneously exhibit fully light-controlled short- and long-term memory based on organic material systems. The device presents a high current contrast above 100-fold and long-term retention over 104 s. As a proof-of-concept for neural networks, a 6 × 6 array of photosynapses performed outstanding visual pattern learning/forgetting with high accuracy. This study exploits the design strategy of a conjugated BCP electret to unleash the full potential of wavelength-adaptive visual neuroplasticity transitions. It provides an effective architecture for designing high-performance and high-storage capacity required applications in next-generation neuromorphic systems.
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Affiliation(s)
- Ender Ercan
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yan-Cheng Lin
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Yun-Fang Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Bi-Hsuan Lin
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Hiroya Shimizu
- Department of Organic Materials Science, Graduate School of Organic Materials Science, Yamagata University, Yonezawa 992-8510, Yamagata, Japan
| | - Shin Inagaki
- Department of Organic Materials Science, Graduate School of Organic Materials Science, Yamagata University, Yonezawa 992-8510, Yamagata, Japan
| | - Tomoya Higashihara
- Department of Organic Materials Science, Graduate School of Organic Materials Science, Yamagata University, Yonezawa 992-8510, Yamagata, Japan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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3
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Chen JC, Lu YD, Chen JY. Generation of Long-Lived Excitons in Room-Temperature Phosphorescence 2D Organic and Inorganic Hybrid Perovskites for Ultrafast and Low Power-Consumption Nonvolatile Photomemory. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2301028. [PMID: 37075740 DOI: 10.1002/advs.202301028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/14/2023] [Revised: 03/18/2023] [Indexed: 05/03/2023]
Abstract
Room-temperature phosphorescence (RTP) two-dimensional (2D) organic-inorganic hybrid perovskites (OIHPs) that possess superior stability and efficient triplet energy transfer between inorganic parts and organic cations have been seen as promising materials in optoelectronic devices. However, the development of RTP 2D OIHP-based photomemory has not been explored yet. In this work, the spatially addressable RTP 2D OIHPs-based nonvolatile flash photomemory is first investigated to explore the function of triplet excitons in elevating the performance of photomemory. Thanks to the triplet excitons generated in RTP 2D OIHP, extremely low photo-programming time of 0.7 ms, multilevel behavior of minimum 7 bits (128 levels), remarkable photoresponsivity of 19.10 AW-1 and significantly low power consumption of 6.79 × 10-8 J per bit can be achieved. The current study provides a new prospective in understanding triplet excitons function in nonvolatile photomemory.
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Affiliation(s)
- Jian-Cheng Chen
- Department of Chemical Engineering, National Chung Cheng University, Chiayi, 62102, Taiwan
| | - Yu-Dao Lu
- Department of Photonics, National Cheng Kung University, Tainan, 70101, Taiwan
| | - Jung-Yao Chen
- Department of Chemical Engineering, National Chung Cheng University, Chiayi, 62102, Taiwan
- Department of Photonics, National Cheng Kung University, Tainan, 70101, Taiwan
- Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, 70101, Tainan, Taiwan
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4
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Veeramuthu L, Cho CJ, Liang FC, Venkatesan M, Kumar G R, Hsu HY, Chung RJ, Lee CH, Lee WY, Kuo CC. Human Skin-Inspired Electrospun Patterned Robust Strain-Insensitive Pressure Sensors and Wearable Flexible Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2022; 14:30160-30173. [PMID: 35748505 DOI: 10.1021/acsami.2c04916] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Wearable skin-inspired electronic skins present remarkable outgrowth in recent years because their promising comfort device integration, lightweight, and mechanically robust durable characteristics led to significant progresses in wearable sensors and optoelectronics. Wearable electronic devices demand real-time applicability and factors such as complex fabrication steps, manufacturing cost, and reliable and durable performances, severely limiting the utilization. Herein, we nominate a scalable solution-processable electrospun patterned candidate capable of forming ultralong mechanically robust nano-microdimensional fibers with higher uniformity. Nanofibrous patterned substrates present surface energy and silver nanoparticle crystallization shifts, contributing to strain-sensitive and -insensitive conductive electrodes (10 000 cycles of 50% strain). Synergistic robust stress releasing and durable electromechanical behavior engenders stretchable durable health sensors, strain-insensitive pressure sensors (sensitivity of ∼83 kPa-1 and 5000 durable cycles), robust alternating current electroluminescent displays, and flexible organic light-emitting diodes (20% improved luminescence and 300 flex endurance of 2 mm bend radius).
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Affiliation(s)
- Loganathan Veeramuthu
- Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Chia-Jung Cho
- Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan
- Institute of Biotechnology and Chemical Engineering, I-Shou University, Kaohsiung 84001, Taiwan
| | - Fang-Cheng Liang
- Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Manikandan Venkatesan
- Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Ranjith Kumar G
- International Graduate Institute of Mechanical and Electrical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Hua-Yi Hsu
- Department of Mechanical Engineering, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Ren-Jei Chung
- Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Chen-Hung Lee
- Division of Cardiology, Department of Internal Medicine, Chang Gung Memorial Hospital-Linkou, Chang Gung University College of Medicine, Tao-Yuan 33305, Taiwan
| | - Wen-Ya Lee
- Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Chi-Ching Kuo
- Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan
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5
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Yang W, Lin Y, Inagaki S, Shimizu H, Ercan E, Hsu L, Chueh C, Higashihara T, Chen W. Low-Energy-Consumption and Electret-Free Photosynaptic Transistor Utilizing Poly(3-hexylthiophene)-Based Conjugated Block Copolymers. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105190. [PMID: 35064648 PMCID: PMC8922097 DOI: 10.1002/advs.202105190] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Revised: 01/03/2022] [Indexed: 05/14/2023]
Abstract
Neuromorphic computation possesses the advantages of self-learning, highly parallel computation, and low energy consumption, and is of great promise to overcome the bottleneck of von Neumann computation. In this work, a series of poly(3-hexylthiophene) (P3HT)-based block copolymers (BCPs) with different coil segments, including polystyrene, poly(2-vinylpyridine) (P2VP), poly(2-vinylnaphthalene), and poly(butyl acrylate), are utilized in photosynaptic transistor to emulate paired-pulse facilitation, spike time/rate-dependent plasticity, short/long-term neuroplasticity, and learning-forgetting-relearning processes. P3HT serves as a carrier transport channel and a photogate, while the insulating coils with electrophilic groups are for charge trapping and preservation. Three main factors are unveiled to govern the properties of these P3HT-based BCPs: i) rigidity of the insulating coil, ii) energy levels between the constituent polymers, and iii) electrophilicity of the insulating coil. Accordingly, P3HT-b-P2VP-based photosynaptic transistor with a sought-after BCP combination demonstrates long-term memory behavior with current contrast up to 105 , short-term memory behavior with high paired-pulse facilitation ratio of 1.38, and an ultralow energy consumption of 0.56 fJ at an operating voltage of -0.0003 V. As far as it is known, this is the first work to utilize conjugated BCPs in an electret-free photosynaptic transistor showing great potential to the artificial intelligence technology.
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Affiliation(s)
- Wei‐Chen Yang
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Yan‐Cheng Lin
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Shin Inagaki
- Department of Organic Materials ScienceGraduate School of Organic Materials ScienceYamagata UniversityYonezawaYamagata992‐8510Japan
| | - Hiroya Shimizu
- Department of Organic Materials ScienceGraduate School of Organic Materials ScienceYamagata UniversityYonezawaYamagata992‐8510Japan
| | - Ender Ercan
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Li‐Che Hsu
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
- Institute of Polymer Science and EngineeringNational Taiwan UniversityTaipei10617Taiwan
| | - Chu‐Chen Chueh
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Tomoya Higashihara
- Department of Organic Materials ScienceGraduate School of Organic Materials ScienceYamagata UniversityYonezawaYamagata992‐8510Japan
| | - Wen‐Chang Chen
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center for Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
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6
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Lin YC, Yang WC, Chiang YC, Chen WC. Recent Advances in Organic Phototransistors: Nonvolatile Memory, Artificial Synapses, and Photodetectors. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202100109] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022] Open
Affiliation(s)
- Yan-Cheng Lin
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei 10617 Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei 10617 Taiwan
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7
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Lee S, Kim S, Yoo H. Contribution of Polymers to Electronic Memory Devices and Applications. Polymers (Basel) 2021; 13:3774. [PMID: 34771332 PMCID: PMC8588209 DOI: 10.3390/polym13213774] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 10/26/2021] [Accepted: 10/29/2021] [Indexed: 11/23/2022] Open
Abstract
Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes, mechanical flexibility, and neuromorphic applications. This review revisits recent efforts on polymer-based electronic memory developments. The versatile contributions of polymers for emerging memory devices are classified, providing a timely overview of such unconventional functionalities with a strong emphasis on the merits of polymer utilization. Furthermore, this review discusses the opportunities and challenges of polymer-based memory devices with respect to their device performance and stability for practical applications.
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Affiliation(s)
| | | | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 1342, Korea; (S.L.); (S.K.)
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8
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Ercan E, Lin Y, Chen C, Fang Y, Yang W, Yang Y, Chen W. Realizing fast photoinduced recovery with polyfluorene‐
block
‐poly
(vinylphenyl oxadiazole) block copolymers as electret in photonic transistor memory devices. JOURNAL OF POLYMER SCIENCE 2021. [DOI: 10.1002/pol.20210393] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Affiliation(s)
- Ender Ercan
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
| | - Yan‐Cheng Lin
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
| | - Chun‐Kai Chen
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Yi‐Kai Fang
- Institute of Polymer Science and Engineering National Taiwan University Taipei Taiwan
| | - Wei‐Chen Yang
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Yun‐Fang Yang
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Wen‐Chang Chen
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
- Institute of Polymer Science and Engineering National Taiwan University Taipei Taiwan
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9
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Yang WC, Lin YC, Liao MY, Hsu LC, Lam JY, Chuang TH, Li GS, Yang YF, Chueh CC, Chen WC. Comprehensive Non-volatile Photo-programming Transistor Memory via a Dual-Functional Perovskite-Based Floating Gate. ACS APPLIED MATERIALS & INTERFACES 2021; 13:20417-20426. [PMID: 33886254 DOI: 10.1021/acsami.1c03402] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Photonic transistor memory has received increasing attention as next-generation optoelectronic devices for light fidelity (Li-Fi) application due to the attractive advantages of ultra-speed, high security, and low power consumption. However, most transistor-type photonic memories developed to date still rely on electrical bias for operation, imposing certain limits on data transmission efficiency and energy consumption. In this study, the dual manipulation of "photo-writing" and "photo-erasing" of a novel photonic transistor memory is successfully realized by cleverly utilizing the complementary light absorption between the photoactive material, n-type BPE-PTCDI, in the active channel and the hybrid floating gate, CH3NH3PbBr3/poly(2-vinylpyridine). The fabricated device not only can be operated under the full spectrum but also shows stable switching cycles of photo-writing (PW)-reading (R)-photo-erasing (PE)-reading (R) (PW-R-PE-R) with a high memory ratio of ∼104, and the memory characteristics possess a stable long-term retention of >104 s. Notably, photo-erasing only requires 1 s light illumination. Due to the fully optical functionality, the rigid gate electrode is removed and a novel two-terminal flexible photonic memory is fabricated. The device not only exhibits stable electrical performance after 1000 bending cycles but also manifests a multilevel functional behavior, demonstrating a promising potential for the future development of photoactive electronic devices.
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Affiliation(s)
- Wei-Chen Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Ming-Yun Liao
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Li-Che Hsu
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Jeun-Yan Lam
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Tsung-Han Chuang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Guan-Syuan Li
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yun-Fang Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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10
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Li Q, Li T, Zhang Y, Zhao H, Li J, Yao J. Dual-functional optoelectronic memories based on ternary hybrid floating gate layers. NANOSCALE 2021; 13:3295-3303. [PMID: 33533792 DOI: 10.1039/d0nr09066b] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Optoelectronic memories based on organic field-effect transistors (OFETs) have been extensively investigated, and great progress has been made in improving memory performance and reducing operating power consumption. Despite these achievements, optoelectronic memories reported so far have only a single storage function, such as light-assisted memory, light writing memory, or light-erasing memory, which may not meet the requirements of multi-functional storage in the future. Here, the dual-functional optoelectronic memories are demonstrated by employing ternary hybrid films as floating gate layers. Integrating the advantages of hole trapping in [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and photoinduced electron trapping in CsPbBr3 quantum dots (QDs), the dual-functional storages including electric programming holes and light programming electrons can be realized in one device. Owing to the complementary charge trapping advantages in CsPbBr3 QDs and PCBM, the devices also show a short light erasing time of 0.05 s and low erasing gate bias within -35 V. In addition, the devices exhibit decent endurance for 500 continuous light programming-reading-electric programming-reading cycling tests and admirable electron and hole retention time of 10 000 s with negligible charge leakage. This study may offer a feasible path for the development of new-generation memory.
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Affiliation(s)
- Qingyan Li
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Tengteng Li
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Yating Zhang
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Hongliang Zhao
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Jie Li
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Jianquan Yao
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
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11
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Lin W, Chen G, Li E, He L, Yu W, Peng G, Chen H, Guo T. Nonvolatile Multilevel Photomemory Based on Lead-Free Double Perovskite Cs 2AgBiBr 6 Nanocrystals Wrapped Within SiO 2 as a Charge Trapping Layer. ACS APPLIED MATERIALS & INTERFACES 2020; 12:43967-43975. [PMID: 32867472 DOI: 10.1021/acsami.0c12185] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Floating gate transistor photomemory (FGTPM) has been regarded as one of the most prospective nonvolatile photomemory devices because of its compatibility with transistor-based circuits, nondestructive reading, and multilevel storage. Until now, owing to the excellent photoelectric properties, lead-based perovskite nanocrystals (PNCs) have been applied in most of the perovskite-based FGTPM devices and embedded in the polymer matrix as the charge trapping layer. However, the polymer matrix and its solvent would degrade the structure of the PNCs, resulting in the loss of their unique photoresponse ability. In addition, lead-based perovskites have environmental unfriendliness and poor stability. Hence, a novel nonvolatile FGTPM based on oligomeric silica (OS) wrapped lead-free double perovskite Cs2AgBiBr6 NCs was demonstrated for the first time. Acting synchronously as the protection layer for the discrete Cs2AgBiBr6 NCs and charge tunneling layer for the FGTPM device, the OS layer can achieve controllable thickness by adjusting the process parameters, leading to an adjustment of storage properties with a larger memory window (58 V). Owing to the excellent photoresponse ability of the Cs2AgBiBr6@OS composite layer, the FGTPM device exhibited high-performance with repeatable multilevel nonvolatile photomemory and precise photoresponse ability of wavelength/time/power-dependent photoirradiation without extra gate biasing.
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Affiliation(s)
- Weikun Lin
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Institute of Optoelectronic Display, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Emerging Display Research Center, Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Gengxu Chen
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Institute of Optoelectronic Display, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Emerging Display Research Center, Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Enlong Li
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Institute of Optoelectronic Display, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Emerging Display Research Center, Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Lihua He
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Institute of Optoelectronic Display, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Emerging Display Research Center, Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Weijie Yu
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Institute of Optoelectronic Display, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Emerging Display Research Center, Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Gang Peng
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Institute of Optoelectronic Display, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Emerging Display Research Center, Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Huipeng Chen
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Institute of Optoelectronic Display, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Emerging Display Research Center, Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Tailiang Guo
- National & Local United Engineering Laboratory of Flat Panel Display Technology, Institute of Optoelectronic Display, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Emerging Display Research Center, Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
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12
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Chiang YC, Hung CC, Lin YC, Chiu YC, Isono T, Satoh T, Chen WC. High-Performance Nonvolatile Organic Photonic Transistor Memory Devices using Conjugated Rod-Coil Materials as a Floating Gate. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002638. [PMID: 32700349 DOI: 10.1002/adma.202002638] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2020] [Revised: 06/07/2020] [Indexed: 06/11/2023]
Abstract
A novel approach for using conjugated rod-coil materials as a floating gate in the fabrication of nonvolatile photonic transistor memory devices, consisting of n-type Sol-PDI and p-type C10-DNTT, is presented. Sol-PDI and C10-DNTT are used as dual functions of charge-trapping (conjugated rod) and tunneling (insulating coil), while n-type BPE-PDI and p-type DNTT are employed as the corresponding transporting layers. By using the same conjugated rod in the memory layer and transporting channel with a self-assembled structure, both n-type and p-type memory devices exhibit a fast response, a high current contrast between "Photo-On" and "Electrical-Off" bistable states over 105 , and an extremely low programing driving force of 0.1 V. The fabricated photon-driven memory devices exhibit a quick response to different wavelengths of light and a broadband light response that highlight their promising potential for light-recorder and synaptic device applications.
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Affiliation(s)
- Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Chih-Chien Hung
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Yu-Cheng Chiu
- Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan
| | - Takuya Isono
- Faculty of Engineering, Hokkaido University, Sapporo, 060-8628, Japan
| | - Toshifumi Satoh
- Faculty of Engineering, Hokkaido University, Sapporo, 060-8628, Japan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
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13
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Liao MY, Chiang YC, Chen CH, Chen WC, Chueh CC. Two-Dimensional Cs 2Pb(SCN) 2Br 2-Based Photomemory Devices Showing a Photoinduced Recovery Behavior and an Unusual Fully Optically Driven Memory Behavior. ACS APPLIED MATERIALS & INTERFACES 2020; 12:36398-36408. [PMID: 32700518 DOI: 10.1021/acsami.0c10587] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The rapid development of Internet of Things and big data has made the conventional storage devices face the need of reforming. Rather than using electrical pulses to store data in one of two states, photomemory exploiting optical stimulation to store light information emerges as a revolutionary candidate for the optoelectronic community. However, fully optically driven photomemory with fast data transmission speed and outstanding energy saving capability suffers from less exploration. Herein, a transistor-type photomemory using a 2D Cs2Pb(SCN)2Br2/polymer hybrid floating gate is explored and three host polymers, polystyrene, poly(4-vinylphenol), and poly(vinylpyrrolidone) (PVP), are investigated to understand the relationship between polymer matrix selection and memory performance. All devices show a photoinduced recovery memory behavior but with two distinctly different photomemory behaviors. In addition to the demonstration of a regular nonvolatile photomemory showing a high on/off ratio of >106 over 104 s, an unusual fully optically driven memory behavior is intriguingly accomplished in the Cs2Pb(SCN)2Br2/PVP photomemory. Using white light as the driver of programming and a blue laser as the main performer of erasing, this device can be switched between two distinguishable states and possesses acceptable data discriminability, as evidenced by its fully optically driven writing (programing)-reading-erasing-reading switching function that shows an on/off current ratio of 103. This study not only presents the first 2D perovskite-based photomemory but also shows a novel fully optically driven memory that has been rarely reported in the literature.
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Affiliation(s)
- Ming-Yun Liao
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chiung-Han Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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14
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Ercan E, Liu CL, Chen WC. Nano-Micro Dimensional Structures of Fiber-Shaped Luminous Halide Perovskite Composites for Photonic and Optoelectronic Applications. Macromol Rapid Commun 2020; 41:e2000157. [PMID: 32608544 DOI: 10.1002/marc.202000157] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2020] [Revised: 05/19/2020] [Indexed: 12/27/2022]
Abstract
Perovskite nanomaterials have been revealed as highly luminescent structures regarding their dimensional confinement. In particular, their promising potential lies behind remarkable luminescent properties, including color tunability, high photoluminescence quantum yield, and the narrow emission band of halide perovskite (HP) nanostructures for optoelectronic and photonic applications such as lightning and displaying operations. However, HP nanomaterials possess such drawbacks, including oxygen, moisture, temperature, or UV lights, which limit their practical applications. Recently, HP-containing polymer composite fibers have gained much attention owing to the spatial distribution and alignment of HPs with high mechanical strength and ambient stability in addition to their remarkable optical properties comparable to that of nanocrystals. In this review, the fabrication methods for preparing nano-microdimensional HP composite fiber structures are described. Various advantages of the luminescent composite nanofibers are also described, followed by their applications for photonic and optoelectronic devices including sensors, polarizers, waveguides, lasers, light-down converters, light-emitting diode operations, etc. Finally, future directions and remaining challenges of HP-based nanofibers are presented.
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Affiliation(s)
- Ender Ercan
- Department of Chemical Engineering and Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Cheng-Liang Liu
- Department of Chemical and Materials Engineering and Research Center of New Generation Light Driven Photovoltaic Modules, National Central University, Taoyuan, 32001, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering and Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
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15
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Veeramuthu L, Liang FC, Zhang ZX, Cho CJ, Ercan E, Chueh CC, Chen WC, Borsali R, Kuo CC. Improving the Performance and Stability of Perovskite Light-Emitting Diodes by a Polymeric Nanothick Interlayer-Assisted Grain Control Process. ACS OMEGA 2020; 5:8972-8981. [PMID: 32337461 PMCID: PMC7178802 DOI: 10.1021/acsomega.0c00758] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/20/2020] [Accepted: 03/24/2020] [Indexed: 06/11/2023]
Abstract
CsPbBr3 is a promising light-emitting material due to its wet solution processability, high photoluminescence quantum yield (PLQY), narrow color spectrum, and cost-effectiveness. Despite such advantages, the morphological defects, unsatisfactory carrier injection, and stability issues retard its widespread applications in light-emitting devices (LEDs). In this work, we demonstrated a facile and cost-effective method to improve the morphology, efficiency, and stability of the CsPbBr3 emissive layer using a dual polymeric encapsulation governed by an interface-assisted grain control process (IAGCP). An eco-friendly low-cost hydrophilic polymer poly(vinylpyrrolidone) (PVP) was blended into the CsPbBr3 precursor solution, which endows the prepared film with a better surface coverage with a smoothened surface. Furthermore, it is revealed that inserting a thin PVP nanothick interlayer at the poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS)/emissive layer interface further promotes the film quality and the performance of the derived LED. It is mainly attributed to three major consequences: (i) reduced grain size of the emissive layer, which facilitates charge recombination, (ii) reduced current leakage due to the enhanced electron-blocking effect, and (iii) improved color purity and air stability owing to better defect passivation. As a result, the optimized composite emissive film can retain the luminescence properties even on exposure to ambient conditions for 80 days and ∼62% of its initial PL intensity can be preserved after 30 days of storage without any encapsulation.
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Affiliation(s)
- Loganathan Veeramuthu
- Institute
of Organic and Polymeric Materials, Research and Development Center
of Smart Textile Technology, National Taipei
University of Technology, 10608 Taipei, Taiwan
| | - Fang-Cheng Liang
- Institute
of Organic and Polymeric Materials, Research and Development Center
of Smart Textile Technology, National Taipei
University of Technology, 10608 Taipei, Taiwan
- Centre
de Recherches sur les Macromolécules Végétales
(CERMAV), affiliated with Grenoble Alpes
University, Institut Carnot PolyNat, BP53, 38041 Grenoble Cedex 9, France
| | - Zhi-Xuan Zhang
- Institute
of Organic and Polymeric Materials, Research and Development Center
of Smart Textile Technology, National Taipei
University of Technology, 10608 Taipei, Taiwan
| | - Chia-Jung Cho
- Institute
of Organic and Polymeric Materials, Research and Development Center
of Smart Textile Technology, National Taipei
University of Technology, 10608 Taipei, Taiwan
| | - Ender Ercan
- Department
of Chemical Engineering and Advanced Research Center for Green Materials
Science and Technology, National Taiwan
University, 106 Taipei, Taiwan
| | - Chu-Chen Chueh
- Department
of Chemical Engineering and Advanced Research Center for Green Materials
Science and Technology, National Taiwan
University, 106 Taipei, Taiwan
| | - Wen-Chang Chen
- Department
of Chemical Engineering and Advanced Research Center for Green Materials
Science and Technology, National Taiwan
University, 106 Taipei, Taiwan
| | - Redouane Borsali
- Centre
de Recherches sur les Macromolécules Végétales
(CERMAV), affiliated with Grenoble Alpes
University, Institut Carnot PolyNat, BP53, 38041 Grenoble Cedex 9, France
| | - Chi-Ching Kuo
- Institute
of Organic and Polymeric Materials, Research and Development Center
of Smart Textile Technology, National Taipei
University of Technology, 10608 Taipei, Taiwan
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16
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Lv Z, Wang Y, Chen J, Wang J, Zhou Y, Han ST. Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems. Chem Rev 2020; 120:3941-4006. [DOI: 10.1021/acs.chemrev.9b00730] [Citation(s) in RCA: 114] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Affiliation(s)
- Ziyu Lv
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yan Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Jingrui Chen
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Junjie Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
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17
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Xia C, Liu C, Zhou F, Gu P, Li H, He J, Li Y, Xu Q, Lu J. Tunable Electronic Memory Performances Based on Poly(Triphenylamine) and Its Metal Complex via a SuFEx Click Reaction. Chem Asian J 2019; 14:4296-4302. [DOI: 10.1002/asia.201901234] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2019] [Revised: 10/14/2019] [Indexed: 11/06/2022]
Affiliation(s)
- Chenyu Xia
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologyNational Center for International ResearchSoochow University Suzhou 215123 P. R. China
| | - Cheng Liu
- Institute of Functional Nano & Soft Materials Laboratory (FUNSOM)Jiangsu Key Laboratory for Carbon-Based Functional MaterialsSoochow University Suzhou 215123 P. R. China
| | - Feng Zhou
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologyNational Center for International ResearchSoochow University Suzhou 215123 P. R. China
| | - Peiyang Gu
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologyNational Center for International ResearchSoochow University Suzhou 215123 P. R. China
| | - Hua Li
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologyNational Center for International ResearchSoochow University Suzhou 215123 P. R. China
| | - Jinghui He
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologyNational Center for International ResearchSoochow University Suzhou 215123 P. R. China
| | - Youyong Li
- Institute of Functional Nano & Soft Materials Laboratory (FUNSOM)Jiangsu Key Laboratory for Carbon-Based Functional MaterialsSoochow University Suzhou 215123 P. R. China
| | - Qingfeng Xu
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologyNational Center for International ResearchSoochow University Suzhou 215123 P. R. China
| | - Jianmei Lu
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologyNational Center for International ResearchSoochow University Suzhou 215123 P. R. China
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18
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Shih CC, Chiang YC, Hsieh HC, Lin YC, Chen WC. Multilevel Photonic Transistor Memory Devices Using Conjugated/Insulated Polymer Blend Electrets. ACS APPLIED MATERIALS & INTERFACES 2019; 11:42429-42437. [PMID: 31625392 DOI: 10.1021/acsami.9b14628] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Photonic data storage has diverse optoelectronic applications such as optical sensing and recording, integrated image circuits, and multibit-storage flash memory. In this study, we employ conjugated/insulated polymer blends as the charge storage electret for photonic field-effect transistor memory devices by exploring the blend composition, energy level alignment, and morphology on the memory characteristics. The studied conjugated polymers included poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PF), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[{2,5-di(3',7'-dimethyloctyloxy)-1,4-phenylene-vinylene}-co-{3-(4'-(3″,7″-dimethyloctyloxy)phenyl)-1,4-phenylenevinylene}-co-{3-(3'-(3',7'-dimethyloctyloxy)phenyl)-1,4-phenylenevinylene}] (SY-PPV), and poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)] (F8BT), and the insulated polymers were polystyrene (PS) and poly(methyl methacrylate) (PMMA). The photonic memory device using the PF/PS blend electret exhibited a dynamic switching behavior with light-writing and voltage-erasing processes both within only 1 s, along with a high contrast on the current on/off ratio between "Photo-On" and "Electrical-OFF" over 106 and the decent retention time for more than 3 months. In addition, the multilevel memory behavior could be observed using different light sources of 405, 450, and 520 nm or energy intensity, which was supported by surface potential analysis. The characteristics were superior to those of the devices using PF/PMMA blend due to the higher charge storage behavior of PS supported by fluorescence analysis. The PF/PS blend film prepared from the chlorobenzene solvent exhibited mesh-like and aggregated PF domains in the PS matrix and enhanced the contact surface area between the semiconductor and blend electret, leading to a higher memory window. The photonic memory behavior was also observed in the blend electrets of PS with the low band gap polymer, MEH-PPV, SY-PPV, or F8BT, by changing the photoresponsive light sources. Our study demonstrated a new electret system to apply on the multilevel photonic memory devices.
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19
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Liu H, Cui M, Dang C, Wen W, Wang X, Xie L. Two-Dimensional WSe 2/Organic Acceptor Hybrid Nonvolatile Memory Devices Based on Interface Charge Trapping. ACS APPLIED MATERIALS & INTERFACES 2019; 11:34424-34429. [PMID: 31448585 DOI: 10.1021/acsami.9b11998] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Two-dimensional (2D) materials, with atomic thickness and unique electronic structure, hold great potentials in electronic device applications. Charge transfer at the interface of 2D materials further provides a versatile platform for applications in electronics. Here, we report nonvolatile memory devices based on interface charge trapping between 2D WSe2 and organic electron acceptors. The 2D WSe2-organic acceptor hybrid structure exhibits a high storage performance, such as large gate memory windows, high on/off ratios (>103), and long retention time (>1000 s). Further analysis revealed that organic acceptors with a stronger electron affinity (i.e., higher redox potential) have a larger electron-trapping ability and hence a better memory performance.
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Affiliation(s)
- Haining Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience , National Center for Nanoscience and Technology , Beijing 100190 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Menghua Cui
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience , National Center for Nanoscience and Technology , Beijing 100190 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Chunhe Dang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience , National Center for Nanoscience and Technology , Beijing 100190 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Wen Wen
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience , National Center for Nanoscience and Technology , Beijing 100190 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Xinsheng Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience , National Center for Nanoscience and Technology , Beijing 100190 , P. R. China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience , National Center for Nanoscience and Technology , Beijing 100190 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
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20
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Li Q, Zhang Y, Yu Y, Chen Z, Jin L, Li Y, Li T, Yang Y, Zhao H, Li J, Dai H, Yang J, Yao J. Light enhanced low-voltage nonvolatile memory based on all-inorganic perovskite quantum dots. NANOTECHNOLOGY 2019; 30:37LT01. [PMID: 31181548 DOI: 10.1088/1361-6528/ab2809] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Light enhanced low-voltage nonvolatile memory was prepared using all-inorganic perovskite quantum dots (QDs) as a semiconductor layer and Ag nanoparticles (NPs) as a floating gate layer. The photo-induced carriers can be produced in CsPbBr3 QDs under ultraviolet light and trapped in Ag NPs under the action of an external electric field. With the assistance of light, the device exhibited a significantly larger memory window (ΔV th) under low programming and erasing voltages of ±5 V owing to the use of CsPbBr3 QDs. Furthermore, we proved that the ΔV th of the memory strongly depended on the applied bias voltage (V DS) as well as still remaining at 79.3% after 105 s at V DS of 1.4 V. The facile memory provides a new approach to trap a photo-induced charge and reduce operating voltages by combining QDs with metal NPs.
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Affiliation(s)
- Qingyan Li
- Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China
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21
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Ercan E, Tsai PC, Chen JY, Lam JY, Hsu LC, Chueh CC, Chen WC. Stretchable and Ambient Stable Perovskite/Polymer Luminous Hybrid Nanofibers of Multicolor Fiber Mats and Their White LED Applications. ACS APPLIED MATERIALS & INTERFACES 2019; 11:23605-23615. [PMID: 31252500 DOI: 10.1021/acsami.9b05527] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
We report the fabrication and optical/mechanical properties of perovskite/thermoplastic polyurethane (TPU)-based multicolor luminescent core-shell nanofibers and their large-scale fiber mats. One-step coaxial perovskite/TPU nanofibers had a high photoluminescence quantum yield value exceeding 23.3%, surpassing that of its uniaxial counterpart, due to the homogeneous distribution of perovskite nanoparticles (NPs) by the confinement of the TPU shell. The fabricated core-shell nanofibers exhibited a high mechanical endurance owing to the well elastic properties of TPU and maintained the luminescence intensity even under a 100% stretched state after 1000 stretching-relaxing cycles. By taking advantage of the hydrophobic nature of TPU, the ambient and moisture stability of the fabricated fibers were enhanced up to 1 month. Besides, large-area stretchable nanofibers with a dimension of 15 cm × 30 cm exhibiting various visible-light emission peaks were fabricated by changing the composition of perovskite NPs. Moreover, a large-scale luminescent and stretchable fiber mat was successfully fabricated by electrospinning. Furthermore, the white-light emission from the fabricated fibers and mats was achieved by incorporating orange-light-emitting poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] into the TPU shell and coupling the turquoise blue-light-emitting perovskite NPs in the core site. Finally, the integrity of the perovskite-based TPU fibers was realized by fabricating a light-emitting diode (LED) device containing the orange-light-emitting fibers embedded in the polyfluorene emissive layer. This work demonstrated an effective way to prepare stable and stretchable luminous nanofibers and the integration of such nanofibers into LED devices, which could facilitate the future development of wearable electronic devices.
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