Structure and properties of intrinsic and extrinsic defects in black phosphorus

Unusual defect properties of the one-dimensional photovoltaic semiconductor selenium

Defect tolerance is crucial in photovoltaic absorbers. Here we report that trigonal selenium (t-Se) exhibits a perovskite-like antibonding valence band maximum arising from Se p-p coupling. This results in the shallow nature of dominant Se vacancy defects. We further reveal the unique defect self-healing characteristic of Se intrinsic point defects.

Diffusion and Coalescence of Phosphorene Monovacancies Studied Using High-Dimensional Neural Network Potentials

The properties of two-dimensional materials are strongly affected by defects that are often present in considerable numbers. In this study, we investigate the diffusion and coalescence of monovacancies in phosphorene using molecular dynamics (MD) simulations accelerated by high-dimensional neural network potentials. Trained and validated with reference data obtained with density functional theory (DFT), such surrogate models provide the accuracy of DFT at a much lower cost, enabling simulations on time scales that far exceed those of first-principles MD. Our microsecond long simulations reveal that monovacancies are highly mobile and move predominantly in the zigzag rather than armchair direction, consistent with the energy barriers of the underlying hopping mechanisms. In further simulations, we find that monovacancies merge into energetically more stable and less mobile divacancies following different routes that may involve metastable intermediates.

Phase Engineering and Synchrotron-Based Study on Two-Dimensional Energy Nanomaterials

In recent years, there has been significant interest in the development of two-dimensional (2D) nanomaterials with unique physicochemical properties for various energy applications. These properties are often derived from the phase structures established through a range of physical and chemical design strategies. A concrete analysis of the phase structures and real reaction mechanisms of 2D energy nanomaterials requires advanced characterization methods that offer valuable information as much as possible. Here, we present a comprehensive review on the phase engineering of typical 2D nanomaterials with the focus of synchrotron radiation characterizations. In particular, the intrinsic defects, atomic doping, intercalation, and heterogeneous interfaces on 2D nanomaterials are introduced, together with their applications in energy-related fields. Among them, synchrotron-based multiple spectroscopic techniques are emphasized to reveal their intrinsic phases and structures. More importantly, various in situ methods are employed to provide deep insights into their structural evolutions under working conditions or reaction processes of 2D energy nanomaterials. Finally, conclusions and research perspectives on the future outlook for the further development of 2D energy nanomaterials and synchrotron radiation light sources and integrated techniques are discussed.

Effect of vacancy defects on transport in all-phosphorene nanoribbon devices from first principles

Defects in experimentally manufactured phosphorene nanoribbons (PNRs) occur unavoidably, affecting the functionality of PNR-based devices. In this work, we theoretically propose and investigate an all-PNR devices with single-vacancy (SV) defects and double-vacancy (DV) defects along the zigzag direction, accounting for both hydrogen passivation and non-passivation scenarios. We discovered that, in the case of hydrogen passivation, the DV defect can introduce in-gap states, whereas the SV defect can result in p-type doping. The unpassivated hydrogen nanoribbon exhibits an edge state with a considerable influence on the transport properties, which also masks the effect of defects on transport; furthermore, it demonstrates the phenomenon of negative differential resistance, whose occurrence and characteristics depend less on the presence or absence of defects.

Black Phosphorous Aptamer-based Platform for Biomarker Detection

Black phosphorus nanostructures (nano-BPs) mainly include BP nanosheets (BP NSs), BP quantum dots (BPQDs), and other nano-BPs-based particles at nanoscale. Firstly discovered in 2014, nano-BPs are one of the most popular nanomaterials. Different synthesis methods are discussed in short to understand the basic concepts and developments in synthesis. Exfoliated nano-BPs, i.e. nano-BPs possess high surface area, high photothermal conversion efficacy, excellent biocompatibility, high charge carrier mobility (~1000 cm^-2V^-1s^-1), thermal conductivity of 86 Wm^-1K^-1; and these properties make it a highly potential candidate for fabrication of biosensing platform. These properties enable nano-BPs to be promising photothermal/drug delivery agents as well as in electrochemical data storage devices and sensing devices; and in super capacitors, photodetectors, photovoltaics and solar cells, LEDs, super-conductors, etc. Early diagnosis is very critical in the health sector scenarios. This review attempts to highlight the attempts made towards attaining stable BP, BP-aptamer conjugates for successful biosensing applications. BP-aptamer- based platforms are reviewed to highlight the significance of BP in detecting biological and physiological markers of cardiovascular diseases and cancer; to be useful in disease diagnosis and management.

Interlayer Doping of Cu on Bilayer Black Phosphorus for Enhanced Charge Transfer and Transport Properties

Metal doping between black phosphorus (BP) layers has great advantages in modulating electronic properties. Here, the effects of Cu intercalation on charge transfer and carrier dynamics are investigated by theoretical calculations. Relative to the pristine bilayer BP, Cu suppresses the nonradiative electron-hole recombination, reducing the major pathways of energy and current loss. Furthermore, we investigate a novel pn homogeneous junction based on the Cu-doped bilayer BP, which shows enhanced transport properties and Ohmic contact characteristics. This is because doping leads to the transformation of BP from p-type to n-type, charge accumulation on conduction bands allows electrons to be easily transferred to the p-type bilayer BP, and associated electrical properties can be modulated by the doping concentration. This study has fundamental importance for understanding structure-property relationships in metal intercalation, which is an important guidance for integration and interlayer engineering for two-dimensional materials.

Identification and Manipulation of Defects in Black Phosphorus

We identify and manipulate commonly occurring defects in black phosphorus, combining scanning tunneling microscopy experiments with density functional theory calculations. A ubiquitous defect, imaged at negative bias as a bright dumbbell extending over several nanometers, is shown to arise from a substitutional Sn impurity in the second sublayer. Another frequently observed defect type is identified as arising from an interstitial Sn atom; this defect can be switched to a more stable configuration consisting of a Sn substitutional defect + P adatom, by application of an electrical pulse via the STM tip. DFT calculations show that this pulse-induced structural transition switches the system from a non-magnetic configuration to a magnetic one. We introduce States Projected Onto Individual Layers (SPOIL) quantities which provide information about atom-wise and orbital-wise contributions to bias-dependent features observed in STM images.

Electronic Self-Passivation of Single Vacancy in Black Phosphorus via Ionization

We report that monoelemental black phosphorus presents a new electronic self-passivation scheme of single vacancy (SV). By means of low-temperature scanning tunneling microscopy and noncontact atomic force microscopy, we demonstrate that the local reconstruction and ionization of SV into negatively charged SV^{-} leads to the passivation of dangling bonds and, thus, the quenching of in-gap states, which can be achieved by mild thermal annealing or STM tip manipulation. SV exhibits a strong and symmetric Friedel oscillation (FO) pattern, while SV^{-} shows an asymmetric FO pattern with local perturbation amplitude reduced by one order of magnitude and a faster decay rate. The enhanced passivation by forming SV^{-} can be attributed to its weak dipolelike perturbation, consistent with density-functional theory numerical calculations. Therefore, self-passivated SV^{-} is electrically benign and acts as a much weaker scattering center, which may hold the key to further enhance the charge mobility of black phosphorus and its analogs.

Zero-Valent Palladium Single-Atoms Catalysts Confined in Black Phosphorus for Efficient Semi-Hydrogenation

Single-atom catalysts (SACs) represent a new frontier in heterogeneous catalysis due to their remarkable catalytic properties and maximized atomic utilization. However, single atoms often bond to the support with polarized electron density and thus exhibit a high valence state, limiting their catalytic scopes in many chemical transformations. Here, it is demonstrated that 2D black phosphorus (BP) acts as giant phosphorus (P) ligand to confine a high density of single atoms (e.g., Pd₁ , Pt₁ ) via atomic layer deposition. Unlike other 2D materials, BP with relatively low electronegativity and buckled structure favors the strong confinement of robust zero-valent palladium SACs in the vacancy site. Metallic Pd₁ /BP SAC shows a highly selective semi-hydrogenation of phenylacetylene toward styrene, distinct from metallic Pd nanoparticles that facilitate the formation of fully hydrogenated products. Density functional theory calculations reveal that Pd atom forms covalent-like bonding with adjacent P atoms, wherein H atoms tend to adsorb, aiding the dissociative adsorption of H₂ . Zero-valent Pd in the confined space favors a larger energy gain for the synthesis of partially hydrogenated product over the fully hydrogenated one. This work provides a new route toward the synthesis of zero-valent SACs on BP for organic transformations.

Defect dynamics in two-dimensional black phosphorus under argon ion irradiation

Fundamental understanding of the atomic-scale mechanisms underlying production, accumulation, and temporal evolution of defects in phosphorene during noble-gas ion irradiation is crucial to design efficient defect engineering routes to fabricate next-generation materials for energy technologies. Here, we employed classical molecular dynamics (CMD) simulations using a reactive force field to unravel the effect of defect dynamics on the structural changes in a monolayer of phosphorene induced by argon-ion irradiation, and its subsequent relaxation during post-radiation annealing treatment. Analysis of our CMD trajectories using unsupervised machine learning methods showed that radiation fluence strongly influences the types of defect that form, their dynamics, and their relaxation mechanisms during subsequent annealing. Low ion fluences yielded a largely crystalline sheet featuring isolated small voids (up to 2 nm), Stone-Wales defects, and mono-/di-vacancies; while large nanopores (∼10 nm) can form beyond a critical fluence of ∼10¹⁴ ions per cm². During post-radiation annealing, we found two distinct relaxation mechanisms, depending on the fluence level. The isolated small voids (1-2 nm) formed at low ion-fluences heal via local re-arrangement of rings, which is facilitated by a cooperative mechanism involving a series of atomic motions that include thermal rippling, bond formation, bond rotation, angle bending and dihedral twisting. On the other hand, damaged structures obtained at high fluences exhibit pronounced coalescence of nanopores mediated by 3D networks of P-centered tetrahedra. These findings provide new perspectives to use ion beams to precisely control the concentration and distribution of specific defect types in phosphorene for emerging applications in electronics, batteries, sensing, and neuromorphic computing.

Novel green phosphorene as a superior chemical gas sensing material

Green phosphorus and its monolayer variant, green phosphorene (GreenP), are the recent members of two-dimensional (2D) phosphorus polymorphs. The new polymorph possesses the high stability, tunable direct bandgap, exceptional electronic transport, and directionally anisotropic properties. All these unique features could reinforce it the new contender in a variety of electronic, optical, and sensing devices. Herein, we present gas-sensing characteristics of pristine and defected GreenP towards major environmental gases (i. e., NH₃, NO, NO₂, CO, CO₂, and H₂O) using combination of the density functional theory, statistical thermodynamic modeling, and the non-equilibrium Green's function approach (NEGF). The calculated adsorption energies, density of states (DOS), charge transfer, and Crystal Orbital Hamiltonian Population (COHP) reveal that NO, NO₂, CO, CO₂ are adsorbed on GreenP, stronger than both NH₃ and H₂O, which are weakly physisorbed via van der Waals interactions. Furthermore, substitutional doping by sulfur can selectively intensify the adsorption towards crucial NO₂ gas because of the enhanced charge transfer between p orbitals of the dopant and the analyte. The statistical estimation of macroscopic measurable adsorption densities manifests that the significant amount of NO₂ molecules can be practically adsorbed at ambient temperature even at the ultra-low concentration of part per billion (ppb). In addition, the current-voltage (I-V) characteristics of S-doped GreenP exhibit a variation upon NO₂ exposure, indicating the superior sensitivity in sensing devices. Our work sheds light on the promising application of the novel GreenP as promising chemical gas sensors.

Astability versus Bistability in van der Waals Tunnel Diode for Voltage Controlled Oscillator and Memory Applications

van der Waals (vdW) tunnel junctions are attractive because of their atomically sharp interface, gate tunability, and robustness against lattice mismatch between the successive layers. However, the negative differential resistance (NDR) demonstrated in this class of tunnel diodes often exhibits noisy behavior with low peak current density and lacks robustness and repeatability, limiting their practical circuit applications. Here, we propose a strategy of using a 1L-WS₂ as an optimum tunnel barrier sandwiched in a broken gap tunnel junction of highly doped black phosphorus (BP) and SnSe₂. We achieve high yield tunnel diodes exhibiting highly repeatable, ultraclean, and gate-tunable NDR characteristics with a signature of intrinsic oscillation, and a large peak-to-valley current ratio (PVCR) of 3.6 at 300 K (4.6 at 7 K), making them suitable for practical applications. We show that the thermodynamic stability of the vdW tunnel diode circuit can be tuned from astability to bistability by altering the constraint through choosing a voltage or a current bias, respectively. In the astable mode under voltage bias, we demonstrate a compact, voltage-controlled oscillator without the need for an external tank circuit. In the bistable mode under current bias, we demonstrate a highly scalable, single-element, one-bit memory cell that is promising for dense random access memory applications in memory intensive computation architectures.

Surface Adsorption and Vacancy in Tuning the Properties of Tellurene

The emerging two-dimensional tellurene has been demonstrated to be a promising candidate for photoelectronic devices. However, there is a lack of comprehensive insight into the effects of vacancies and common adsorbates (i.e., O₂ and H₂O) in ambient conditions, which play a crucial role in semiconducting devices. In this work, with the aid of first-principles calculations, we demonstrate that H₂O and O₂ molecules behave qualitatively differently on tellurene, while water adsorption can be remarkably promoted by adjacent preadsorbed O₂. Upon the formation of Te vacancies, the adsorption of both O₂ and H₂O molecules is enhanced. More importantly, the existence of H₂O and Te vacancies can dramatically facilitate the dissociation of O₂, suggesting that tellurene may be readily oxidized in humid conditions. In addition, it is found that the electronic properties of tellurene are well preserved upon either H₂O or O₂ adsorption on the surface. In sharp contrast, vacancies enable significant modification on the band structure. Specifically, an indirect-to-direct band gap transition is found at a vacancy concentration of 5.3%.