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Lu G, Wang J, Zhou R, Xie Z, Yuan Y, Huang L, Yeow JTW. Terahertz communication: detection and signal processing. NANOTECHNOLOGY 2024; 35:352002. [PMID: 38768574 DOI: 10.1088/1361-6528/ad4dad] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2023] [Accepted: 05/20/2024] [Indexed: 05/22/2024]
Abstract
The development of 6 G networks has promoted related research based on terahertz communication. As submillimeter radiation, signal transportation via terahertz waves has several superior properties, including non-ionizing and easy penetration of non-metallic materials. This paper provides an overview of different terahertz detectors based on various mechanisms. Additionally, the detailed fabrication process, structural design, and the improvement strategies are summarized. Following that, it is essential and necessary to prevent the practical signal from noise, and methods such as wavelet transform, UM-MIMO and decoding have been introduced. This paper highlights the detection process of the terahertz wave system and signal processing after the collection of signal data.
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Affiliation(s)
- Guanxuan Lu
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Jiaqi Wang
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Rui Zhou
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Zhemiao Xie
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Yifei Yuan
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Lin Huang
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - John T W Yeow
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
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2
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Guo YT, Yi SS. Recent Advances in the Preparation and Application of Two-Dimensional Nanomaterials. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5798. [PMID: 37687495 PMCID: PMC10488888 DOI: 10.3390/ma16175798] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2023] [Revised: 08/16/2023] [Accepted: 08/22/2023] [Indexed: 09/10/2023]
Abstract
Two-dimensional nanomaterials (2D NMs), consisting of atoms or a near-atomic thickness with infinite transverse dimensions, possess unique structures, excellent physical properties, and tunable surface chemistry. They exhibit significant potential for development in the fields of sensing, renewable energy, and catalysis. This paper presents a comprehensive overview of the latest research findings on the preparation and application of 2D NMs. First, the article introduces the common synthesis methods of 2D NMs from both "top-down" and "bottom-up" perspectives, including mechanical exfoliation, ultrasonic-assisted liquid-phase exfoliation, ion intercalation, chemical vapor deposition, and hydrothermal techniques. In terms of the applications of 2D NMs, this study focuses on their potential in gas sensing, lithium-ion batteries, photodetection, electromagnetic wave absorption, photocatalysis, and electrocatalysis. Additionally, based on existing research, the article looks forward to the future development trends and possible challenges of 2D NMs. The significance of this work lies in its systematic summary of the recent advancements in the preparation methods and applications of 2D NMs.
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Affiliation(s)
| | - Sha-Sha Yi
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China;
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3
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Wang J, Xie Z, Lu G, Liu JA, Yeow JTW. An infrared photothermoelectric detector enabled by MXene and PEDOT:PSS composite for noncontact fingertip tracking. MICROSYSTEMS & NANOENGINEERING 2023; 9:21. [PMID: 36860334 PMCID: PMC9968636 DOI: 10.1038/s41378-022-00454-3] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/18/2022] [Revised: 07/26/2022] [Accepted: 09/01/2022] [Indexed: 06/18/2023]
Abstract
Photothermoelectric (PTE) detectors functioning on the infrared spectrum show much potential for use in many fields, such as energy harvesting, nondestructive monitoring, and imaging fields. Recent advances in low-dimensional and semiconductor materials research have facilitated new opportunities for PTE detectors to be applied in material and structural design. However, these materials applied in PTE detectors face some challenges, such as unstable properties, high infrared reflection, and miniaturization issues. Herein, we report our fabrication of scalable bias-free PTE detectors based on Ti3C2 and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) composites and characterization of their composite morphology and broadband photoresponse. We also discuss various PTE engineering strategies, including substrate choices, electrode types, deposition methods, and vacuum conditions. Furthermore, we simulate metamaterials using different materials and hole sizes and fabricated a gold metamaterial with a bottom-up configuration by simultaneously combining MXene and polymer, which achieved an infrared photoresponse enhancement. Finally, we demonstrate a fingertip gesture response using the metamaterial-integrated PTE detector. This research proposes numerous implications of MXene and its related composites for wearable devices and Internet of Things (IoT) applications, such as the continuous biomedical tracking of human health conditions.
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Affiliation(s)
- Jiaqi Wang
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, 200 University Ave West, Waterloo, ON N2L 3G1 Canada
| | - Zhemiao Xie
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, 200 University Ave West, Waterloo, ON N2L 3G1 Canada
| | - Guanxuan Lu
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, 200 University Ave West, Waterloo, ON N2L 3G1 Canada
| | - Jiayu Alexander Liu
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, 200 University Ave West, Waterloo, ON N2L 3G1 Canada
| | - John T. W. Yeow
- Advanced Micro-/Nano- Devices Lab, Department of Systems Design Engineering, University of Waterloo, 200 University Ave West, Waterloo, ON N2L 3G1 Canada
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4
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Zdeg I, Al‐Shami A, Tiouichi G, Absike H, Chaudhary V, Neugebauer P, Nouneh K, Belhboub A, Mounkachi O, El Fatimy A. Electrical Transport Properties of Layered Black Phosphorus grown by Chemical Vapor Transport. CRYSTAL RESEARCH AND TECHNOLOGY 2022. [DOI: 10.1002/crat.202200164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
Affiliation(s)
- I. Zdeg
- Institute of Applied Physics Mohammed VI Polytechnic University Lot 660, Hay Moulay Rachid Ben Guerir Benguerir 43150 Morocco
- Complex Systems and Interactions Ecole Centrale Casablanca Bouskoura, Ville Verte Casablanca 27182 Morocco
| | - A. Al‐Shami
- Laboratory of Condensed Matter and Interdisciplinary Sciences LaMCScI, Faculty of Sciences Mohammed V University of Rabat Benguerir 43150 Morocco
| | - G. Tiouichi
- Institute of Applied Physics Mohammed VI Polytechnic University Lot 660, Hay Moulay Rachid Ben Guerir Benguerir 43150 Morocco
- MSDA Mohammed VI Polytechnic University Lot 660, Hay Moulay Rachid Ben Guerir Benguerir 43150 Morocco
| | - H. Absike
- Institute of Applied Physics Mohammed VI Polytechnic University Lot 660, Hay Moulay Rachid Ben Guerir Benguerir 43150 Morocco
| | - V. Chaudhary
- Institute of Applied Physics Mohammed VI Polytechnic University Lot 660, Hay Moulay Rachid Ben Guerir Benguerir 43150 Morocco
- MSDA Mohammed VI Polytechnic University Lot 660, Hay Moulay Rachid Ben Guerir Benguerir 43150 Morocco
| | - P. Neugebauer
- Central European Institute of Technology CEITEC BUT Purkyňova 656/123 Brno 61200 Czech Republic
| | - K. Nouneh
- Laboratory of Material Physics and Subatomic Ibn Tofail University BP 242 Kenitra 14000 Morocco
| | - A. Belhboub
- Complex Systems and Interactions Ecole Centrale Casablanca Bouskoura, Ville Verte Casablanca 27182 Morocco
| | - O. Mounkachi
- Institute of Applied Physics Mohammed VI Polytechnic University Lot 660, Hay Moulay Rachid Ben Guerir Benguerir 43150 Morocco
- Laboratory of Condensed Matter and Interdisciplinary Sciences LaMCScI, Faculty of Sciences Mohammed V University of Rabat Benguerir 43150 Morocco
- MSDA Mohammed VI Polytechnic University Lot 660, Hay Moulay Rachid Ben Guerir Benguerir 43150 Morocco
| | - A. El Fatimy
- Institute of Applied Physics Mohammed VI Polytechnic University Lot 660, Hay Moulay Rachid Ben Guerir Benguerir 43150 Morocco
- Central European Institute of Technology CEITEC BUT Purkyňova 656/123 Brno 61200 Czech Republic
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Ren X, Wang Y, Ji W, Ren M, Wang P, Zhang S, Li S, Zhang C. Possibility of regulating valley-contrasting physics and topological properties by ferroelectricity in functionalized arsenene. Phys Chem Chem Phys 2022; 24:23910-23918. [PMID: 36165573 DOI: 10.1039/d2cp03196e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A two-dimensional (2D) multifunctional material, which couples multiple physical properties together, is both fundamentally intriguing and practically appealing. Here, based on first-principles calculations and tight-binding (TB) model analysis, the possibility of regulating the valley-contrasting physics and nontrivial topological properties via ferroelectricity is investigated in monolayer AsCH2OH. Reversible electric polarization is accessible via the rotation operation on the ligand. The broken inversion symmetry and the spin-orbit coupling (SOC) would lead to valley spin splitting, spin-valley coupling and valley-contrasting Berry curvature. More importantly, the reversal of electric polarization can realize the nonvolatile control of valley-dependent properties. Besides, the nontrivial topological state is confirmed in the monolayer AsCH2OH, which is robust against the rotation operation on the ligand. The magnitude of polarization, valley spin splitting and bulk band gap can be effectively modulated by the biaxial strain. The H-terminated SiC is demonstrated to be an appropriate candidate for encapsulating monolayer AsCH2OH, without affecting its exotic properties. These findings provide insights into the fundamental physics for the coupling of the valley-contrasting phenomenon, topological properties and ferroelectricity, and open avenues for exploiting innovative device applications.
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Affiliation(s)
- Xiaohan Ren
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China.
| | - Yaping Wang
- State Key Lab of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Weixiao Ji
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China.
| | - Miaojuan Ren
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China.
| | - Peiji Wang
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China.
| | - Shufeng Zhang
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China.
| | - Shengshi Li
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China.
| | - Changwen Zhang
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China.
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Wang L, An N, He X, Zhang X, Zhu A, Yao B, Zhang Y. Dynamic and Active THz Graphene Metamaterial Devices. NANOMATERIALS 2022; 12:nano12122097. [PMID: 35745433 PMCID: PMC9228136 DOI: 10.3390/nano12122097] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Revised: 06/13/2022] [Accepted: 06/14/2022] [Indexed: 02/06/2023]
Abstract
In recent years, terahertz waves have attracted significant attention for their promising applications. Due to a broadband optical response, an ultra-fast relaxation time, a high nonlinear coefficient of graphene, and the flexible and controllable physical characteristics of its meta-structure, graphene metamaterial has been widely explored in interdisciplinary frontier research, especially in the technologically important terahertz (THz) frequency range. Here, graphene’s linear and nonlinear properties and typical applications of graphene metamaterial are reviewed. Specifically, the discussion focuses on applications in optically and electrically actuated terahertz amplitude, phase, and harmonic generation. The review concludes with a brief examination of potential prospects and trends in graphene metamaterial.
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Affiliation(s)
- Lan Wang
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China;
| | - Ning An
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu 610054, China;
| | - Xusheng He
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (X.H.); (X.Z.); (A.Z.)
| | - Xinfeng Zhang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (X.H.); (X.Z.); (A.Z.)
| | - Ao Zhu
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (X.H.); (X.Z.); (A.Z.)
| | - Baicheng Yao
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu 610054, China;
- Correspondence: (B.Y.); (Y.Z.)
| | - Yaxin Zhang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (X.H.); (X.Z.); (A.Z.)
- Correspondence: (B.Y.); (Y.Z.)
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7
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Shi Z, Zhang H, Khan K, Cao R, Zhang Y, Ma C, Tareen AK, Jiang Y, Jin M, Zhang H. Two-dimensional materials toward Terahertz optoelectronic device applications. JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY C: PHOTOCHEMISTRY REVIEWS 2022. [DOI: 10.1016/j.jphotochemrev.2021.100473] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2023]
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8
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Zhang Y, Wang X, Zhou Y, Lai H, Liu P, Chen H, Wang X, Xie W. Highly Sensitive and Ultra-Broadband VO 2(B) Photodetector Dominated by Bolometric Effect. NANO LETTERS 2022; 22:485-493. [PMID: 34967644 DOI: 10.1021/acs.nanolett.1c04393] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In this study, Wadsley B phase vanadium oxide (VO2(B)) with broad-band photoabsorption ability, a large temperature coefficient of resistance (TCR), and low noise was developed for uncooled broad-band detection. By using a freestanding structure and reducing the size of active area, the VO2(B) photodetector shows stable and excellent performances in the visible to the terahertz region (405 nm to 0.88 mm), with a peak TCR of -4.77% K-1 at 40 °C, a peak specific detectivity of 6.02 × 109 Jones, and a photoresponse time of 83 ms. A terahertz imaging ability with 30 × 30 pixels was demonstrated. Scanning photocurrent imaging and real-time temperature-photocurrent measurements confirm that a photothermal-type bolometric effect is the dominating mechanism. The study shows the potential of VO2(B) in applications as a new type of uncooled broad-band photodetection material and the potential to further raise the performance of broad-band photodetectors by structural design.
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Affiliation(s)
- Yujing Zhang
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Ximiao Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, Guangdong 510275, People's Republic of China
| | - Yang Zhou
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Haojie Lai
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Pengyi Liu
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, Guangdong 510275, People's Republic of China
| | - Xiaomu Wang
- School of Electronic Science and Technology, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Weiguang Xie
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
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9
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Zhang L, Dong Z, Wang L, Hu Y, Guo C, Guo L, Chen Y, Han L, Zhang K, Tian S, Yao C, Chen Z, Cai M, Jiang M, Xing H, Yu X, Chen X, Zhang K, Lu W. Ultrasensitive and Self-Powered Terahertz Detection Driven by Nodal-Line Dirac Fermions and Van der Waals Architecture. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2102088. [PMID: 34668344 PMCID: PMC8655208 DOI: 10.1002/advs.202102088] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2021] [Revised: 08/14/2021] [Indexed: 05/09/2023]
Abstract
Terahertz detection has been highly sought to open a range of cutting-edge applications in biomedical, high-speed communications, astronomy, security screening, and military surveillance. Nonetheless, these ideal prospects are hindered by the difficulties in photodetection featuring self-powered operation at room temperature. Here, this challenge is addressed for the first time by synthesizing the high-quality ZrGeSe with extraordinary quantum properties of Dirac nodal-line semimetal. Benefiting from its high mobility and gapless nature, a metal-ZrGeSe-metal photodetector with broken mirror symmetry allows for a high-efficiency photoelectric conversion assisted by the photo-thermoelectric effect. The designed architecture features ultrahigh sensitivity, excellent ambient stability, and an efficient rectified signal even above 0.26 THz. Maximum responsivity larger than 0.11 A W-1 , response time of 8.3 µs, noise equivalent power (NEP) less than 0.15 nW Hz-1/2 , and demonstrative imaging application are all achieved. The superb performances with a lower dark current and NEP less than 15 pW Hz-1/2 are validated through integrating the van der Waals heterostructure. These results open up an appealing perspective to explore the nontrivial topology of Dirac nodal-line semimetal by devising the peculiar device geometry that allows for a novel roadmap to address targeted terahertz application requirements.
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Affiliation(s)
- Libo Zhang
- Department of Optoelectronic Science and EngineeringState Key Laboratory for Modification of Chemical Fibers and Polymer MaterialsDonghua UniversityShanghai201620China
- State Key Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐tian RoadShanghai200083China
| | - Zhuo Dong
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123China
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaJinzhai Road 96HefeiAnhui230026China
| | - Lin Wang
- Department of Optoelectronic Science and EngineeringState Key Laboratory for Modification of Chemical Fibers and Polymer MaterialsDonghua UniversityShanghai201620China
- State Key Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐tian RoadShanghai200083China
| | - Yibin Hu
- State Key Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐tian RoadShanghai200083China
| | - Cheng Guo
- Research Center for Intelligent NetworkZhejiang LabHangzhou311121China
| | - Lei Guo
- School of PhysicsSoutheast UniversityNanjing211189China
| | - Yulu Chen
- The 50th Research Institute of China Electronics Technology GroupShanghai200331China
| | - Li Han
- Department of Optoelectronic Science and EngineeringState Key Laboratory for Modification of Chemical Fibers and Polymer MaterialsDonghua UniversityShanghai201620China
| | - Kaixuan Zhang
- Department of Optoelectronic Science and EngineeringState Key Laboratory for Modification of Chemical Fibers and Polymer MaterialsDonghua UniversityShanghai201620China
| | - Shijian Tian
- Department of Optoelectronic Science and EngineeringState Key Laboratory for Modification of Chemical Fibers and Polymer MaterialsDonghua UniversityShanghai201620China
| | - Chenyu Yao
- State Key Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐tian RoadShanghai200083China
| | - Zhiqingzi Chen
- State Key Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐tian RoadShanghai200083China
| | - Miao Cai
- State Key Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐tian RoadShanghai200083China
| | - Mengjie Jiang
- Department of Optoelectronic Science and EngineeringState Key Laboratory for Modification of Chemical Fibers and Polymer MaterialsDonghua UniversityShanghai201620China
| | - Huaizhong Xing
- Department of Optoelectronic Science and EngineeringState Key Laboratory for Modification of Chemical Fibers and Polymer MaterialsDonghua UniversityShanghai201620China
| | - Xianbin Yu
- Research Center for Intelligent NetworkZhejiang LabHangzhou311121China
| | - Xiaoshuang Chen
- State Key Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐tian RoadShanghai200083China
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi‐LabSuzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO)Chinese Academy of SciencesRuoshui Road 398SuzhouJiangsu215123China
| | - Wei Lu
- State Key Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu‐tian RoadShanghai200083China
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
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10
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Yu Q, Guo K, Dai Y, Deng H, Wang T, Wu H, Xu Y, Shi X, Wu J, Zhang K, Zhou P. Black phosphorus for near-infrared ultrafast lasers in the spatial/temporal domain. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:503001. [PMID: 34544055 DOI: 10.1088/1361-648x/ac2862] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2021] [Accepted: 09/20/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted extensive interests due to their wide range of electronic and optical properties. After continuous and extensive research, black phosphorus (BP), a novel member of 2D layered semiconductor material, benefit for the unique in-plane anisotropic structure, controllable direct bandgap characteristic, and high charge carrier mobility, has attracted tremendous attention and successfully applied in ultrafast pulse generation. This article, which focuses on near-infrared ultrafast laser demonstration of BP, present discussion of preparation methods for high quality BP nanosheet, various BP based ultrafast lasers in the spatial/temporal domain, and the future research needs.
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Affiliation(s)
- Qiang Yu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
| | - Kun Guo
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Yongping Dai
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China
| | - Haiqin Deng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Tao Wang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Hanshuo Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Yijun Xu
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
| | - Xinyao Shi
- Institute of Quantum Sensing of Wuxi, Wuxi, People's Republic of China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Kai Zhang
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
| | - Pu Zhou
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
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11
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FEM Simulation of Frequency-Selective Surface Based on Thermoelectric Bi-Sb Thin Films for THz Detection. PHOTONICS 2021. [DOI: 10.3390/photonics8040119] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
Terahertz (THz) filters and detectors can find a wide application in such fields as: sensing, imaging, security systems, medicine, wireless connection, and detection of substances. Thermoelectric materials are promising basis for THz detectors’ development due to their sensitivity to the THz radiation, possibility to be heated under the THz radiation and produce voltage due to Seebeck effect. Thermoelectric thin films of Bi-Sb solid solutions are semimetals/semiconductors with the band gap comparable with THz energy and with high thermoelectric conversion efficiency at room temperature. Detecting film surface can be transformed into a periodic frequency selective surface (FSS) that can operate as a frequency filter and increases the absorption of THz radiation. We report for the first time about the simulation of THz detector based on thermoelectric Bi-Sb thin-filmed frequency-selective surface. We show that such structure can be both detector and frequency filter. Moreover, it was shown that FSS design increases not only a heating due to absorption but a temperature gradient in Bi-Sb film by two orders of magnitude in comparison with continuous films. Local temperature gradients can reach the values of the order of 100 K·mm−1. That opens new perspectives for thin-filmed thermoelectric detectors’ efficiency increase. Temperature difference formed due to THz radiation absorption can reach values on the order of 1 degree. Frequency-transient calculations show the power dependence of film temperature on time with characteristic saturation at times around several ms. That points to the perspective of reaching fast response times on such structures.
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12
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Qiu Q, Huang Z. Photodetectors of 2D Materials from Ultraviolet to Terahertz Waves. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008126. [PMID: 33687757 DOI: 10.1002/adma.202008126] [Citation(s) in RCA: 97] [Impact Index Per Article: 32.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2020] [Revised: 02/01/2021] [Indexed: 06/12/2023]
Abstract
2D materials are considered to be the most promising materials for photodetectors due to their unique optical and electrical properties. Since the discovery of graphene, many photodetectors based on 2D materials have been reported. However, the low quantum efficiency, large noise, and slow response caused by the thinness of 2D materials limit their application in photodetectors. Here, recent progress on 2D material photodetectors is reviewed, covering the spectrum from ultraviolet to terahertz waves. First the interaction of 2D materials with light is analyzed in terms of optical physics. Then the present methods to improve the performance of 2D material photodetectors are summarized, such as defect engineering, p-n junctions and hybrid detectors, and the issue of serious overestimation of the performance in reported photodetectors based on 2D materials is discussed. Next, a comparison of 2D material photodetectors with traditional commercially available detectors shows that it is difficult to balance the current 2D material photodetectors with regard to having simultaneously both high sensitivity and fast response. Finally, a possible novel EIW mechanism is suggested to advance the performance of 2D material photodetectors in the future.
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Affiliation(s)
- Qinxi Qiu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, P. R. China
- Key Laboratory of Space Active Opto-Electronics Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, P. R. China
- University of Chinese Academy of Sciences, 19 Yu Quan Road, Beijing, 100049, P. R. China
| | - Zhiming Huang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, P. R. China
- Key Laboratory of Space Active Opto-Electronics Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, P. R. China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, 1 Sub-Lane Xiangshan, Hangzhou, Hangzhou, 310024, P. R. China
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He L, Lian P, Zhu Y, Zhao J, Mei Y. Heteroatom‐Doped
Black Phosphorus and Its Application: A Review. CHINESE J CHEM 2021. [DOI: 10.1002/cjoc.202000330] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Affiliation(s)
- Lu‐dong He
- Faculty of Chemical Engineering, Kunming University of Science and Technology, Yunnan Provincial Key Laboratory of Energy Saving in Phosphorus Chemical Engineering and New Phosphorus‐based Materials Kunming Yunnan 650500 China
| | - Pei‐chao Lian
- Faculty of Chemical Engineering, Kunming University of Science and Technology, Yunnan Provincial Key Laboratory of Energy Saving in Phosphorus Chemical Engineering and New Phosphorus‐based Materials Kunming Yunnan 650500 China
| | - Yuan‐zhi Zhu
- Faculty of Chemical Engineering, Kunming University of Science and Technology, Yunnan Provincial Key Laboratory of Energy Saving in Phosphorus Chemical Engineering and New Phosphorus‐based Materials Kunming Yunnan 650500 China
| | - Jun‐ping Zhao
- Faculty of Chemical Engineering, Kunming University of Science and Technology, Yunnan Provincial Key Laboratory of Energy Saving in Phosphorus Chemical Engineering and New Phosphorus‐based Materials Kunming Yunnan 650500 China
| | - Yi Mei
- Faculty of Chemical Engineering, Kunming University of Science and Technology, Yunnan Provincial Key Laboratory of Energy Saving in Phosphorus Chemical Engineering and New Phosphorus‐based Materials Kunming Yunnan 650500 China
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Zhang K, Zhang L, Han L, Wang L, Chen Z, Xing H, Chen X. Recent progress and challenges based on two-dimensional material photodetectors. NANO EXPRESS 2021. [DOI: 10.1088/2632-959x/abd45b] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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15
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Viti L, Purdie DG, Lombardo A, Ferrari AC, Vitiello MS. HBN-Encapsulated, Graphene-based, Room-temperature Terahertz Receivers, with High Speed and Low Noise. NANO LETTERS 2020; 20:3169-3177. [PMID: 32301617 DOI: 10.1021/acs.nanolett.9b05207] [Citation(s) in RCA: 33] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Uncooled terahertz photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < nW/Hz1/2) over a broad (0.5-10 THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ∼10-11), metrology, quantum information, security, imaging, optical communications. However, present terahertz receivers cannot provide the required balance between sensitivity, speed, operation temperature, and frequency range. Here, we demonstrate uncooled terahertz PDs combining the low (∼2000 kB μm-2) electronic specific heat of high mobility (>50 000 cm2 V-1 s-1) hexagonal boron nitride-encapsulated graphene, with asymmetric field enhancement produced by a bow-tie antenna, resonating at 3 THz. This produces a strong photo-thermoelectric conversion, which simultaneously leads to a combination of high sensitivity (NEP ≤ 160 pW Hz-1/2), fast response time (≤3.3 ns), and a 4 orders of magnitude dynamic range, making our devices the fastest, broad-band, low-noise, room-temperature terahertz PD, to date.
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Affiliation(s)
- Leonardo Viti
- NEST, Istituto Nanoscienze-CNR, Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - David G Purdie
- Cambridge Graphene Centre, University of Cambridge, CB3 0FA Cambridge, U.K
| | - Antonio Lombardo
- Cambridge Graphene Centre, University of Cambridge, CB3 0FA Cambridge, U.K
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, CB3 0FA Cambridge, U.K
| | - Miriam S Vitiello
- NEST, Istituto Nanoscienze-CNR, Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
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16
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Catalysis Mediated by 2D Black Phosphorus Either Pristine or Decorated with Transition Metals Species. SURFACES 2020. [DOI: 10.3390/surfaces3020012] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
Abstract
Among the novel class of mono-elemental two-dimensional (2D) materials, termed Xenes, phosphorene is emerging as a great promise for its peculiar chemical and physical properties. This review collects a selection of the recent breakthroughs that are related to the application of phosphorene in catalysis and electrocatalysis. Noteworthy, thanks to its intrinsic Lewis basic character, pristine phosphorene turned out to be more efficient and more selective than other non-metal catalysts, in chemical processes as the electroreduction of nitrogen to ammonia or the alkylation of nucleophiles with esters. Once functionalized with transition metals nanoparticles (Co, Ni, Pd, Pt, Ag, Au), its catalytic activity has been evaluated in several processes, mainly hydrogen and oxygen evolution reactions. Under visible light irradiation, it has shown a great improvement of the activity, demonstrating high potential as a photocatalyst.
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Chen X, Ponraj JS, Fan D, Zhang H. An overview of the optical properties and applications of black phosphorus. NANOSCALE 2020; 12:3513-3534. [PMID: 31904052 DOI: 10.1039/c9nr09122j] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Since the year 2014, when scientists first obtained black phosphorus using a sticky tape to peel the layers off, it has attracted tremendous interest as a novel two-dimensional material. After it was successfully produced, its outstanding optical properties have been unveiled. Various applications based on these properties have been reported. This study mainly reviews the unique optical properties and potential applications of black phosphorus. The optical performances of black phosphorus mainly include linear optical properties and nonlinear optical properties. Some examples include the anisotropic optical response, saturable absorption effect and Kerr effect. The researchers found that the nonlinear saturable absorption coefficients of black phosphorus are better than that of MoS2 and WS2 from the visible region to the near-infrared region. Compared with graphene, black phosphorus has a better nonlinear saturable absorption performance. After passivation or surface modification, black phosphorus is stable when exposed to oxygen and water. Herein, black phosphorus has the potential to be used in detector/sensors, solar energy harvesting, photocatalysts, optical saturable absorbers in ultrafast lasers, all optical switches, optical modulation, nanomedicine and some others in the near future.
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Affiliation(s)
- Xing Chen
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. China.
| | | | - Dianyuan Fan
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. China.
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. China.
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Yu Y, Yao J, Niu X, Xing B, Liu Y, Wu X, Li M, Yan X, Sha J, Wang Y. Synthesis and electrical properties of single crystalline black phosphorus nanoribbons. CrystEngComm 2020. [DOI: 10.1039/d0ce00390e] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Single crystal black phosphorus nanoribbons along the zigzag direction have been successfully grown by chemical vapor transport.
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Wei A, Lahkar S, Li X, Li S, Ye H. Multilayer Graphene-Based Thermal Rectifier with Interlayer Gradient Functionalization. ACS APPLIED MATERIALS & INTERFACES 2019; 11:45180-45188. [PMID: 31746588 DOI: 10.1021/acsami.9b11762] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
As a counterpart of electrical and optical diodes with asymmetric transmission properties, the nanoscale thermal rectifier has attracted huge attention. Graphene has been expected as the most promising candidate for the design and fabrication of high-performance thermal rectifiers. However, most reported graphene-based thermal rectification has been achieved only within the plane of the graphene layer, and the efficiency is heavily limited by the lateral size, restricting the potential applications. In this paper, we propose a design of multilayer graphene-based thermal rectifier (MGTR) with interlayer gradient functionalization. A unique thermal rectification along the vertical direction without lateral size limitation is demonstrated by molecular dynamics simulations. The heat flux prefers to transport from a fully hydrogenated graphene layer to a pristine graphene layer. The analysis of phonon density of states reveals that the mismatch between dominant frequency domains plays a crucial role in the vertical thermal rectification phenomenon. The impacts of temperature and strain on the rectification efficiency are systematically investigated, and we verify the interlayer welding process as an effective approach to eliminate the degradation induced by out-of-plane compression. In addition, compared with uniform hydrogenation at average H-coverage, an anomalous enhancement of in-plane thermal conductivity of multilayer graphene with interlayer gradient hydrogenation is observed. The proposed MGTR has great potential in designing devices for heat management and logic control.
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Affiliation(s)
- Anran Wei
- State Key Laboratory of Information Photonics and Optical Communications , Beijing University of Posts and Telecommunications , Beijing 100876 , China
- Department of Mechanical Engineering , The Hong Kong Polytechnic University , Hong Hum, Kowloon 999077 , Hong Kong
| | | | | | | | - Han Ye
- State Key Laboratory of Information Photonics and Optical Communications , Beijing University of Posts and Telecommunications , Beijing 100876 , China
- Department of Materials Science and Engineering , Monash University , Clayton , VIC 3800 , Australia
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Lu X, Sun L, Jiang P, Bao X. Progress of Photodetectors Based on the Photothermoelectric Effect. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902044. [PMID: 31483546 DOI: 10.1002/adma.201902044] [Citation(s) in RCA: 49] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2019] [Revised: 07/06/2019] [Indexed: 06/10/2023]
Abstract
High-performance uncooled photodetectors operating in the long-wavelength infrared and terahertz regimes are highly demanded in the military and civilian fields. Photothermoelectric (PTE) detectors, which combine photothermal and thermoelectric conversion processes, can realize ultra-broadband photodetection without the requirement of a cooling unit and external bias. In the last few decades, the responsivity and speed of PTE-based photodetectors have made impressive progress with the discovery of novel thermoelectric materials and the development of nanophotonics. In particular, by introducing hot-carrier transport into low-dimensional material-based PTE detectors, the response time has been successfully pushed down to the picosecond level. Furthermore, with the assistance of surface plasmon, antenna, and phonon absorption, the responsivity of PTE detectors can be significantly enhanced. Beyond the photodetection, PTE effect can also be utilized to probe exotic physical phenomena in spintronics and valleytronics. Herein, recent advances in PTE detectors are summarized, and some potential strategies to further improve the performance are proposed.
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Affiliation(s)
- Xiaowei Lu
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Lin Sun
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Peng Jiang
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
| | - Xinhe Bao
- State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China
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Wang T, Jin X, Yang J, Wu J, Yu Q, Pan Z, Shi X, Xu Y, Wu H, Wang J, He T, Zhang K, Zhou P. Oxidation-Resistant Black Phosphorus Enable Highly Ambient-Stable Ultrafast Pulse Generation at a 2 μm Tm/Ho-Doped Fiber Laser. ACS APPLIED MATERIALS & INTERFACES 2019; 11:36854-36862. [PMID: 31535548 DOI: 10.1021/acsami.9b12415] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Black phosphorus (BP) ranks among the most promising saturable absorber materials for ultrafast pulse generations at 2 μm. However, the easy-to-degrade characteristic of BP seriously limits the long-term operation of ultrafast fiber lasers and hence becomes a bottleneck for its relevant practical applications. In this paper, a modified electrochemical delamination exfoliation process was explored to produce high-performance, large-size, and oxidation-resistant BP nanosheets, where BP nanosheets in high yield with evenly coated tetra-n-butyl-ammonium organics by precisely controlling the intercalation chemistry can be obtained. A mode-locked Tm/Ho co-doped fiber laser with high temporal stability and long-term operation capability was demonstrated based on the innovatively fabricated BP saturable absorber. The self-starting mode-locking operation featuring a high signal-to-noise ratio of 58 dB and long-term stability has been verified for at least 3 weeks, which indicates the successful passivation of the employed synthesis method. These results fully indicated that passivated BP is an efficient candidate in a 2 μm range ultrafast photonic field, which will promote the ultrafast optical application of BP and also other infrared photonic and photoelectronic devices.
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Affiliation(s)
- Tao Wang
- College of Advanced Interdisciplinary Studies , National University of Defense Technology , Changsha 410073 , China
| | - Xiaoxi Jin
- College of Advanced Interdisciplinary Studies , National University of Defense Technology , Changsha 410073 , China
| | | | - Jian Wu
- College of Advanced Interdisciplinary Studies , National University of Defense Technology , Changsha 410073 , China
| | | | - Zhenghui Pan
- Department of Materials Science and Engineering , National University of Singapore , Singapore 117574 , Singapore
| | - Xinyao Shi
- School of Nano Technology and Nano Bionics , University of Science and Technology of China , Hefei 230026 , China
| | | | - Hanshuo Wu
- College of Advanced Interdisciplinary Studies , National University of Defense Technology , Changsha 410073 , China
| | - Jin Wang
- College of Advanced Interdisciplinary Studies , National University of Defense Technology , Changsha 410073 , China
| | - Tingchao He
- College of Physics and Energy , Shenzhen University , Shenzhen 518060 , China
| | | | - Pu Zhou
- College of Advanced Interdisciplinary Studies , National University of Defense Technology , Changsha 410073 , China
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