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Schmiedeke P, Panciera F, Harmand JC, Travers L, Koblmüller G. Real-time thermal decomposition kinetics of GaAs nanowires and their crystal polytypes on the atomic scale. NANOSCALE ADVANCES 2023; 5:2994-3004. [PMID: 37260482 PMCID: PMC10228496 DOI: 10.1039/d3na00135k] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/03/2023] [Accepted: 05/02/2023] [Indexed: 06/02/2023]
Abstract
Nanowires (NWs) offer unique opportunities for tuning the properties of III-V semiconductors by simultaneously controlling their nanoscale dimensions and switching their crystal phase between zinc-blende (ZB) and wurtzite (WZ). While much of this control has been enabled by direct, forward growth, the reverse reaction, i.e., crystal decomposition, provides very powerful means to further tailor properties towards the ultra-scaled dimensional level. Here, we use in situ transmission electron microscopy (TEM) to investigate the thermal decomposition kinetics of clean, ultrathin GaAs NWs and the role of distinctly different crystal polytypes in real-time and on the atomic scale. The whole process, from the NW growth to the decomposition, is conducted in situ without breaking vacuum to maintain pristine crystal surfaces. Radial decomposition occurs much faster for ZB- compared to WZ-phase NWs, due to the development of nano-faceted sidewall morphology and sublimation along the entire NW length. In contrast, WZ NWs form single-faceted, vertical sidewalls with decomposition proceeding only via step-flow mechanism from the NW tip. Concurrent axial decomposition is generally faster than the radial process, but is significantly faster (∼4-fold) in WZ phase, due to the absence of well-defined facets at the tip of WZ NWs. The results further show quantitatively the influence of the NW diameter on the sublimation and step-flow decomposition velocities elucidating several effects that can be exploited to fine-tune the NW dimensions.
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Affiliation(s)
- Paul Schmiedeke
- Technical University of Munich, Walter Schottky Institute, TUM School of Natural Sciences, Physics Department Garching 85747 Germany
| | - Federico Panciera
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Saclay 10 Boulevard Thomas Gobert 91120 Palaiseau France
| | - Jean-Christophe Harmand
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Saclay 10 Boulevard Thomas Gobert 91120 Palaiseau France
| | - Laurent Travers
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Saclay 10 Boulevard Thomas Gobert 91120 Palaiseau France
| | - Gregor Koblmüller
- Technical University of Munich, Walter Schottky Institute, TUM School of Natural Sciences, Physics Department Garching 85747 Germany
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Zhang L, Li X, Cheng S, Shan C. Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures. MATERIALS 2022; 15:ma15051917. [PMID: 35269147 PMCID: PMC8911728 DOI: 10.3390/ma15051917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 02/23/2022] [Accepted: 02/24/2022] [Indexed: 12/02/2022]
Abstract
III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.
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Affiliation(s)
| | - Xing Li
- Correspondence: (X.L.); (C.S.)
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Gang GW, Lee JH, Kim SY, Jeong T, Bin Kim K, Thi Hong Men N, Kim YR, Ahn SJ, Kim CS, Kim YH. Microstructural evolution in self-catalyzed GaAs nanowires during in-situ TEM study. NANOTECHNOLOGY 2021; 32:145709. [PMID: 33326944 DOI: 10.1088/1361-6528/abd437] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The microstructural evolutions in self-catalyzed GaAs nanowires (NWs) were investigated by using in situ heating transmission electron microscopy (TEM). The morphological changes of the self-catalyst metal gallium (Ga) droplet, the GaAs NWs, and the atomic behavior at the interface between the self-catalyst metal gallium and GaAs NWs were carefully studied by analysis of high-resolution TEM images. The microstructural change of the Ga-droplet/GaAs-NWs started at a low temperature of ∼200 °C. Formation and destruction of atomic layers were observed at the Ga/GaAs interface and slow depletion of the Ga droplet was detected in the temperature range investigated. Above 300 °C, the evolution process dramatically changed with time: The Ga droplet depleted rapidly and fast growth of zinc-blende (ZB) GaAs structures were observed in the droplet. The Ga droplet was completely removed with time and temperature. When the temperature reached ∼600 °C, the decomposition of GaAs was detected. This process began in the wurtzite (WZ) structure and propagated to the ZB structure. The morphological and atomistic behaviors in self-catalyzed GaAs NWs were demonstrated based on thermodynamic considerations, in addition to the effect of the incident electron beam in TEM. Finally, GaAs decomposition was demonstrated in terms of congruent vaporization.
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Affiliation(s)
- Geun Won Gang
- Department of Physics, Chungnam National University, 99 Daehak-Ro, Yuseong-Gu, Daejeon 34134, Republic of Korea
| | - Jong Hoon Lee
- UNIST Central Research Facilities (UCRF), UNIST, Ulsan 44919, Republic of Korea
| | - Su Yeon Kim
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Taehyeon Jeong
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Kyung Bin Kim
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Nguyen Thi Hong Men
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Yu Ra Kim
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Sang Jung Ahn
- Korea Research Institute of Standard and Science, 267 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea
- Korea University of Science and Technology, 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea
| | - Chung Soo Kim
- Korea Institute of Ceramic Engineering and Technology, 101 Soho-ro, Jinju 52851, Republic of Korea
| | - Young Heon Kim
- Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
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