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Gou Z, Qu H, Liu H, Ma Y, Zong L, Li B, Xie C, Li Z, Li W, Wang L. Coupling of N-Doped Mesoporous Carbon and N-Ti 3 C 2 in 2D Sandwiched Heterostructure for Enhanced Oxygen Electroreduction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106581. [PMID: 35229469 DOI: 10.1002/smll.202106581] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
2D heterostructures provide a competitive platform to tailor electrical property through control of layer structure and constituents. However, despite the diverse integration of 2D materials and their application flexibility, tailoring synergistic interlayer interactions between 2D materials that form electronically coupled heterostructures remains a grand challenge. Here, the rational design and optimized synthesis of electronically coupled N-doped mesoporous defective carbon and nitrogen modified titanium carbide (Ti3 C2 ) in a 2D sandwiched heterostructure, is reported. First, a F127-polydopamine single-micelle-directed interfacial assembly strategy guarantees the construction of two surrounding mesoporous N-doped carbon monolayers assembled on both sides of Ti3 C2 nanosheets. Second, the followed ammonia post-treatment successfully introduces N elements into Ti3 C2 structure and more defective sites in N-doped mesoporous carbon. Finally, the oxygen reduction reaction (ORR) and theoretical calculation prove the synergistic coupled electronic effect between N-Ti3 C2 and defective N-doped carbon active sites in the 2D sandwiched heterostructure. Compared with the control 2D samples (0.87-0.88 V, 4.90-5.15 mA cm-2 ), the coupled 2D heterostructure possesses the best onset potential of 0.90 V and limited density current of 5.50 mA cm-2 . Meanwhile, this catalyst exhibits superior methanol tolerance and cyclic durability. This design philosophy opens up a new thought for tailoring synergistic interlayer interactions between 2D materials.
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Affiliation(s)
- Zhaolin Gou
- Key Laboratory of Eco-chemical Engineering, Taishan Scholar Advantage and Characteristic Discipline Team of Eco-Chemical Process and Technology, Qingdao, 266042, China
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Huiqi Qu
- Key Laboratory of Eco-chemical Engineering, Taishan Scholar Advantage and Characteristic Discipline Team of Eco-Chemical Process and Technology, Qingdao, 266042, China
| | - Hanfang Liu
- Key Laboratory of Eco-chemical Engineering, Taishan Scholar Advantage and Characteristic Discipline Team of Eco-Chemical Process and Technology, Qingdao, 266042, China
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Yiru Ma
- Key Laboratory of Eco-chemical Engineering, Taishan Scholar Advantage and Characteristic Discipline Team of Eco-Chemical Process and Technology, Qingdao, 266042, China
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Lingbo Zong
- Key Laboratory of Eco-chemical Engineering, Taishan Scholar Advantage and Characteristic Discipline Team of Eco-Chemical Process and Technology, Qingdao, 266042, China
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Bin Li
- Key Laboratory of Eco-chemical Engineering, Taishan Scholar Advantage and Characteristic Discipline Team of Eco-Chemical Process and Technology, Qingdao, 266042, China
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Congxia Xie
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Zhenjiang Li
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Wei Li
- Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Fudan University Shanghai, Shanghai, 200433, China
| | - Lei Wang
- Key Laboratory of Eco-chemical Engineering, Taishan Scholar Advantage and Characteristic Discipline Team of Eco-Chemical Process and Technology, Qingdao, 266042, China
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
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Jang H, Song Y, Seok Y, Im H, Kim TH, Lee JH, Kim YH, Lee K. Zero power infrared sensing in 2D/3D-assembled heterogeneous graphene/In/InSe/Au. NANOSCALE 2022; 14:3004-3012. [PMID: 35170602 DOI: 10.1039/d1nr07884d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Low- or self-powered infrared sensors can be used in a broad range of applications, including networking mobile edge devices and image recognition for autonomous driving technology. Here, we show state-of-the-art self-powered near-infrared (NIR) sensors using graphene/In/InSe/Au as a photoactive region. The self-powered NIR sensors show outstanding performance, achieving a photoresponsivity of ∼8.5 A W-1 and a detectivity of ∼1012 Jones at 850 nm light. Multiple self-powered InSe photodetectors with different device structures and contacts were systematically investigated. In particular, the asymmetrically assembled graphene/In/InSe/Au vertical heterostructure offers a high built-in field, which gives rise to efficient electron-hole pair separation and transit time that is shorter than the photocarrier lifetime. The built-in potential across the InSe was estimated using the Schottky barrier height at each metal contact with InSe, obtained using density functional theory calculations. We also demonstrate InSe vertical field-effect transistors and provide an out-of-plane carrier mobility of InSe. Using the out-of-plane mobility and structural parameters of each device, the built-in field, drift velocity, and corresponding transit time are estimated.
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Affiliation(s)
- Hanbyeol Jang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Yumin Song
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Yongwook Seok
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Heungsoon Im
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Tae Hyung Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Joo-Hyoung Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Yong-Hoon Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Kayoung Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
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Wu D, Guo C, Wang Z, Ren X, Tian Y, Shi Z, Lin P, Tian Y, Chen Y, Li X. A defect-induced broadband photodetector based on WS 2/pyramid Si 2D/3D mixed-dimensional heterojunction with a light confinement effect. NANOSCALE 2021; 13:13550-13557. [PMID: 34477759 DOI: 10.1039/d1nr03243g] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Broadband photodetection is of vital importance for both civil and technological applications. The widespread use of commercial photodiodes based on traditional semiconductors (e.g. GaN, Si, and InGaAs) is limited to the relatively narrow response range. In this work, we have demonstrated a self-driven and broadband photodetector based on WS2/pyramid Si 2D/3D mixed-dimensional van der Waals (vdW) heterojunction, which is assembled by directly transferring 2D WS2 film on 3D pyramid Si. Thanks to the enhanced light absorption with the pyramid Si structure, the defect-induced narrowed bandgap of the WS2 film, and high-quality vdW heterojunction, impressive device performances in terms of a large responsivity of 290 mA W-1, a high specific detectivity of up to 2.6 × 1014 Jones and an ultrabroad response spectrum ranging from 265 nm to 3.0 μm are achieved at zero bias. Importantly, the photodetector can function as an infrared imaging cell with a high spatial resolution. The totality of these excellent features confirms that the demonstrated WS2/pyramid Si 2D/3D mixed-dimensional vdW heterojunction device may hold great promise for applications in high-performance broadband infrared photodetection and imaging.
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Affiliation(s)
- Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, P. R. China.
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Wu D, Guo J, Wang C, Ren X, Chen Y, Lin P, Zeng L, Shi Z, Li XJ, Shan CX, Jie J. Ultrabroadband and High-Detectivity Photodetector Based on WS 2/Ge Heterojunction through Defect Engineering and Interface Passivation. ACS NANO 2021; 15:10119-10129. [PMID: 34024094 DOI: 10.1021/acsnano.1c02007] [Citation(s) in RCA: 63] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Broadband photodetectors are of great importance for numerous optoelectronic applications. Two-dimensional (2D) tungsten disulfide (WS2), an important family member of transition-metal dichalcogenides (TMDs), has shown great potential for high-sensitivity photodetection due to its extraordinary properties. However, the inherent large bandgap of WS2 and the strong interface recombination impede the actualization of high-sensitivity broadband photodetectors. Here, we demonstrate the fabrication of an ultrabroadband WS2/Ge heterojunction photodetector through defect engineering and interface passivation. Thanks to the narrowed bandgap of WS2 induced by the vacancy defects, the effective surface modification with an ultrathin AlOx layer, and the well-designed vertical n-n heterojunction structure, the WS2/AlOx/Ge photodetector exhibits an excellent device performance in terms of a high responsivity of 634.5 mA/W, a large specific detectivity up to 4.3 × 1011 Jones, and an ultrafast response speed. Significantly, the device possesses an ultrawide spectral response spanning from deep ultraviolet (200 nm) to mid-wave infrared (MWIR) of 4.6 μm, along with a superior MWIR imaging capability at room temperature. The detection range has surpassed the WS2-based photodetectors in previous reports and is among the broadest for TMD-based photodetectors. Our work provides a strategy for the fabrication of high-performance ultrabroadband photodetectors based on 2D TMD materials.
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Affiliation(s)
- Di Wu
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Jiawen Guo
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Chaoqiang Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China
| | - Xiaoyan Ren
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Yongsheng Chen
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Pei Lin
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Longhui Zeng
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Zhifeng Shi
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Xin Jian Li
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Chong-Xin Shan
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa 999078, Macau SAR, China
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Xu Y, Ma Y, Yu Y, Chen S, Chang Y, Chen X, Xu G. Self-powered, ultra-high detectivity and high-speed near-infrared photodetectors from stacked-layered MoSe 2/Si heterojunction. NANOTECHNOLOGY 2021; 32:075201. [PMID: 33113523 DOI: 10.1088/1361-6528/abc57d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Photodetectors based on high-performance, two-dimensional (2D) layered transition metal dichalcogenides (TMDCs) are limited by the synthesis of larger-area 2D TMDCs with high quality and optimized device structure. Herein, we report, for the first time, a uniform and stacked-layered MoSe2 film of high quality was deposited onto Si substrate by using the pulsed laser deposition technique, and then in situ constructed layered MoSe2/Si 2D-3D vertical heterojunction. The resultant heterojunction showed a wide near-infrared response up to 1550 nm, with both ultra-high detectivity up to 1.4 × 1014 Jones and a response speed approaching 120 ns at zero bias, which are much better than most previous 2D TMDC-based photodetectors and are comparable to that of commercial Si photodiodes. The high performance of the layered MoSe2/Si heterojunction can be attributed to be the high-quality stacked-layered MoSe2 film, the excellent rectifying behavior of the device and the n-n heterojunction structure. Moreover, the defect-enhanced near-infrared response was determined to be Se vacancies from the density functional theory (DFT) simulations. These results suggest great potential of the layered MoSe2/Si 2D-3D heterojunctions in the field of communication light detection. More importantly, the in situ grown heterojunctions are expected to boost the development of other 2D TMDCs heterojunction-based optoelectronic devices.
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Affiliation(s)
- Yan Xu
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
- Intelligent Interconnected Systems Laboratory of Anhui Province (Hefei University of Technology), Anhui, 230009, People's Republic of China
| | - Yuanming Ma
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
| | - Yongqiang Yu
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
- Intelligent Interconnected Systems Laboratory of Anhui Province (Hefei University of Technology), Anhui, 230009, People's Republic of China
| | - Shirong Chen
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
| | - Yajing Chang
- State Key Laboratory of Pulsed Power Laser Technology, National University of Defense Technology, Hefei, Anhui, 230037, People's Republic of China
| | - Xing Chen
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
| | - Gaobin Xu
- School of Electrical Science and Applied Physics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China
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Abstract
Our review provides a comprehensive overview of the latest evolution of broadband photodetectors (BBPDs) based on 2D materials (2DMs). We begin with BBPDs built on various 2DM channels, including narrow-bandgap 2DMs, 2D topological semimetals, 2D charge density wave compounds, and 2D heterojunctions. Then, we introduce defect-engineered 2DM BBPDs, including vacancy engineering, heteroatom incorporation, and interfacial engineering. Subsequently, we summarize 2DM based mixed-dimensional (0D-2D, 1D-2D, 2D-3D, and 0D-2D-3D) BBPDs. Finally, we provide several viewpoints for the future development of this burgeoning field.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
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