The contribution of Eu3+ doping concentration on the modulation of morphology and luminescence properties of InVO4:Eu3+

Nanomaterials Based on Collaboration with Multiple Partners: Zn3Nb2O8 Doped with Eu3+ and/or Amino Substituted Porphyrin Incorporated in Silica Matrices for the Discoloration of Methyl Red

Designing appropriate materials destined for the removal of dyes from waste waters represents a great challenge for achieving a sustainable society. Three partnerships were set up to obtain novel adsorbents with tailored optoelectronic properties using silica matrices, Zn₃Nb₂O₈ oxide doped with Eu³⁺, and a symmetrical amino-substituted porphyrin. The pseudo-binary oxide with the formula Zn₃Nb₂O₈ was obtained by the solid-state method. The doping of Zn₃Nb₂O₈ with Eu³⁺ ions was intended in order to amplify the optical properties of the mixed oxide that are highly influenced by the coordination environment of Eu³⁺ ions, as confirmed by density functional theory (DFT) calculations. The first proposed silica material, based solely on tetraethyl orthosilicate (TEOS) with high specific surface areas of 518-726 m²/g, offered better performance as an adsorbent than the second one, which also contained 3-aminopropyltrimethoxysilane (APTMOS). The contribution of amino-substituted porphyrin incorporated into silica matrices resides both in providing anchoring groups for the methyl red dye and in increasing the optical properties of the whole nanomaterial. Two different types of methyl red adsorption mechanisms can be reported: one based on surface absorbance and one based on the dye entering the pores of the adsorbents due to their open groove shape network.

Effect of Cu doping on the photocatalytic activity of InVO4 for hazardous dye photodegradation under LED light and its mechanism

Cu doped InVO₄ (xCu-InVO₄ (x = 0.06-0.15 wt %) was synthesized by a facile one-pot hydrothermal method for the removal of methylene blue (MB) under LED light irradiation. The X-ray photoelectron spectroscopy (XPS) analysis indicated the coexistence of V⁵⁺ and V⁴⁺ species due to the O-deficient nature of the xCu-InVO₄. The synthesized photocatalysts displayed a morphology of spherical and square shaped particles (20-40 nm) and micro-sized rectangle rods with a length range of 100-200 μm. The xCu-InVO₄ exhibited superior adsorption and photodegradation efficiency compared to pristine InVO₄ and TiO₂ due to the presence of O₂ vacancies, V⁴⁺/V⁵⁺ species, and Cu dopant. The optimum reaction conditions were found to be 5 mg L^-1 (MB concentration), pH 6, and 100 mg of photocatalyst mass with a removal efficiency and mineralization degree of 100% and 96.67%, respectively. The main active species responsible for the degradation of MB were ^•OH radicals and h⁺. Reusability studies indicated that the 0.13Cu-InVO₄ was deactivated after a single cycle of photocatalytic reaction due to significant leaching of V⁴⁺ and Cu²⁺ species.

Malate-aided selective crystallization and luminescence comparison of tetragonal and monoclinic LaVO4:Eu nanocrystals

With malate (Mal2-) as a new type of chelate, tetragonal (t-) and monoclinic (m-) structured LaVO4:Eu crystals (∼10-60 nm) were selectively crystallized as nanosquares and nanorods via a hydrothermal reaction at 200 °C for 24 h. The effects of the Mal2-:(La,Eu)3+ molar ratio, solution pH and Eu3+ content on the phase structure and crystal morphology were systematically investigated and elucidated. The competition between OH- and Mal2- toward rare earth ions was discussed to play a critical role in phase selection, and the t-phase can only be fabricated at pH ∼ 6-8 with the assistance of Mal2-. The optimal Eu3+ content for luminescence was determined to be ∼5 at% under the VO43- → Eu3+ energy transfer mechanism. Experimental comparison showed that t-(La0.95Eu0.05)VO4 (λex = 275 nm, λem = 620 nm) emits ∼5.3 times as strong as m-(La0.95Eu0.05)VO4 does (λex = 313 nm, λem = 616 nm), while theoretical analysis revealed that the 5D0 level of Eu3+ has a quantum efficiency of ∼80% for the former and ∼70% for the latter. Besides, the t- and m-(La0.95Eu0.05)VO4 nanocrystal phosphors were analyzed to have fluorescence lifetimes of ∼1.53 ± 0.01 and 2.28 ± 0.01 ms for their 620 and 616 nm red emissions, respectively.

Wide visible-range fluorescence of Eu3+ located in the macroscopic bi-layer ceramic/glass composite

The Eu3+ doped fluoride bi-layer ceramic/glass composite (GCZBL-Eu) was prepared by a one-step method and the effective wide visible-range fluorescence was recorded. The de-population rates of the 5D0, 5D1, 5D2, and 5D3 multi-levels in the glass layer (GZBL-Eu) were estimated to be 214, 746, 1163, and 680 s-1, respectively, and that in the ceramic layer (CZBL-Eu) were 211, 730, 1075, and 654 s-1, which implies multi-channel radiative transitions due to the non-radiative relaxation limitation of low OH content and low phonon energy. Simultaneously, the quantum efficiencies of the 5D0 levels in GZBL-Eu and CZBL-Eu were as high as 98.5% and 94.8%, respectively, thus demonstrating the effectiveness of the radiative transition emissions from Eu3+. Besides, GCZBL-Eu with the glass forming layer increases the emission intensity by 24% compared to CZBL-Eu, which is attributed to the multiple-cycle reflection in the composite structure of the glass-ceramic transition region, and the color coordinates of CZBL-Eu (0.483, 0.385) and GCZBL-Eu (0.469, 0.389) show that they can release yellowish-white light. The hetero-structured GCZBL-Eu provides a new approach for laser lighting, fluorescent display, and up-conversion applications.

Investigation on the Luminescence Properties of InMO4 (M = V5+, Nb5+, Ta5+) Crystals Doped with Tb3+ or Yb3+ Rare Earth Ions

We explore the potential of Tb- and Yb-doped InVO4, InTaO4, and InNbO4 for applications as phosphors for light-emitting sources. Doping below 0.2% barely change the crystal structure and Raman spectrum but provide optical excitation and emission properties in the visible and near-infrared (NIR) spectral regions. From optical measurements, the energy of the first/second direct band gaps was determined to be 3.7/4.1 eV in InVO4, 4.7/5.3 in InNbO4, and 5.6/6.1 eV in InTaO4. In the last two cases, these band gaps are larger than the fundamental band gap (being indirect gap materials), while for InVO4, a direct band gap semiconductor, the fundamental band gap is at 3.7 eV. As a consequence, this material shows a strong self-activated photoluminescence centered at 2.2 eV. The other two materials have a weak self-activated signal at 2.2 and 2.9 eV. We provide an explanation for the origin of these signals taking into account the analysis of the polyhedral coordination around the pentavalent cations (V, Nb, and Ta). Finally, the characteristic green (5D4 → 7F J ) and NIR (2F5/2 → 2F7/2) emissions of Tb3+ and Yb3+ have been analyzed and explained.