Low temperature-processed ZnO thin films for p–n junction-based visible-blind ultraviolet photodetectors

Real-Time Ultraviolet Monitoring System with Low-Temperature Solution-Processed High-Transparent p-n Junction Photodiode with a Fast Responsive and High Rectification Ratio

We introduce an enhanced performance organic-inorganic hybrid p-n junction photodiode, utilizing poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) and ZnO, fabricated through a solution-based process at a low temperature under 100 °C. Improved interfacial electronic structure, characterized by shallower Gaussian standard deviation of the density-of-state distribution and a larger interface dipole, has resulted in a remarkable fold increase of ∼102 in signal-to-noise ratio for the device. This photodiode exhibits a high specific detectivity (2.32 × 1011 Jones, cm × Hz × W - 1 ) and exceptional rectification ratio (5.47 × 104 at ±1 V). The primary light response, concentrated in the optimal thickness of the PTAA layer, contributes to response over the entire UVA region and rapid response speed, with rise and fall times of 0.24 and 0.64 ms, respectively. Furthermore, this work demonstrates immense potential of our device for health monitoring applications by enabling real-time and continuous measurements of UV intensity.

Electrochemical synthesis of Zinc oxide/polymer/phosphotungstic acid composites for a UV detector

ZnO is an ideal material for UV detection. However, due to the surface effect of ZnO, the photosensitivity of the ZnO based UV detector needs to be improved. In this study, we deposited a hydroxyl group functionalized (3,4-propylenethiophene) polymer (PProDOT-OH) film onto a hydrothermally grown ZnO nanoarray by electro-chemical deposition method to prevent the corrosion of ZnO by phosphotungsten acid (PWA), and then PWA was drip-coated on the composite film to prepare the ZnO/PProDOT-OH/PWA composite based UV detector. The structure and morphology of the composite were characterized by SEM, UV–vis, FT-IR, XRD, Raman, EDS, XPS analysis, illustrating the phosphotungstic acid was uniformly coated on ZnO/PProDOT-OH surface and confirming the composite was successfully synthesized. The UV detection performance was studied through preparing a UV detector with the composite material and results indicate that the introduction of PWA could enhance the responsivity of the ZnO/PProDOT-OH composite-based UV detector.

Simplified chemical processed Cd1-xAlxS thin films for high-performance photodetector applications

In this present investigation, we report the effect of aluminum (Al) doping on the photoelectric performance of cadmium sulfide (CdS) thin films prepared by cost-effective automatic nebulizer spray method. The doping of Al concentrations varied from 1 at.% to 9 at.% in the steps of 3 at.%. X-ray diffraction (XRD) patterns show hexagonal crystal structure with polycrystalline nature and the enrichment of crystallite sizes as a function of Al doping concentrations. The formed impurity phase i.e. CdO might be helpful in enhancing the photoelectric performance by its additional photo-generated charge carriers. The optical studies confirm the maximum absorption showed in the visible spectral range with the corresponding minimum bandgap of 2.28 eV for 6 at.% of Al. The room temperature photoluminescence studies show an increase of near-band-edge (NBE) emission as a function of Al doping concentration and this NBE is close to the obtained bandgap in terms of wavelength. In addition, the observed red emission at 635 nm is due to the surface-related impurities or native defect states. From the present work, the observed responsivity (R), external quantum efficiency (EQE) and detectivity (D*) of the CdS:Al detectors are 8.64 AW^-1, ∼2018% and 9.29 × 10¹¹jones, respectively for the optimum 6 at.% of CdS:Al film. The performance of CdS:Al films reported in this work are significantly improved when compared with literature reports. The present investigation, therefore offers a potential material, CdS:Al, as a photodetector for various scientific and industrial applications.

Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices

We developed silver-doped Cd1–xAgxO thin films (where x = 0, 0.01, 0.02, 0.03 and 0.04) on amorphous glass substrate by an automated nebulizer spray pyrolysis set-up. The XRD patterns show rock salt cubic crystal structures, and the crystallite sizes vary with respect to Ag doping concentrations. SEM images exhibited a uniform distribution of grains with the addition of Ag; this feature could support the enhancement of electron mobility. The transmittance spectra reveal that all films show high transmittance in the visible region with the observed bandgap of about 2.40 eV. The room temperature photoluminescence (PL) studies show the increase of near-band-edge (NBE) emission of the films prepared by different Ag doping levels, resulting in respective decreases in the bandgaps. The photodiode performance was analyzed for the fabricated p-Si/n-Cd1–xAgxO devices. The responsivity, external quantum efficiency and detectivity of the prepared p-Si/n-Cd1–xAgxO device were investigated. The repeatability of the optimum (3 at.% Ag) photodiode was also studied. The present investigation suggests that Cd1–xAgxO thin films are the potential candidates for various industrial and photodetector applications.

Boosted photoresponsivity using silver nanoparticle decorated TiO2 nanowire/reduced graphene oxide thin-film heterostructure

Here, we report on the fabrication and use of a silver (Ag) nanoparticle (NP) decorated TiO₂ nanowire (NW)/reduced graphene oxide (RGO) thin-film (TF) heterostructure as a UV detector, using a controlled method called the glancing angle deposition technique. Transmission electron microscope images show Ag NPs (size 7-13 nm) covering the entire surface of the TiO₂ NWs. A high absorption as well as photoluminescence for the Ag NP-TiO₂ NW/RGO TF sample reveals the generation of a large number of electron-hole pairs compared to bare TiO₂ NW. The resulting plasmonic UV photodetector from the Ag NP-TiO₂ NW/RGO TF exhibits a rectification ratio of 5039 (+10 V) and responsivity of 1760 A W^-1 at 350 nm light (with power density as low as 0.58 µ W cm^-2). Moreover, the device shows fast response speed (rise time of 157 ms and fall time of 488 ms) with detectivity and noise equivalent power of 6.659 × 10¹³ Jones and 51 fW, respectively. The enhanced plasmonic field and high scattering of light, along with the high mobility RGO layer at the bottom, result in the superior performance of the device.

Lattice defect-formulated ferromagnetism and UV photo-response in pure and Nd, Sm substituted ZnO thin films

The induction of charge and spin in diluted magnetic semiconductor ZnO is explored for spintronic devices and its wide direct band gap (3.37 eV) and large exciton binding energy (60 meV) exhibit potential in UV photodetectors. We reported the ferromagnetic and optical properties of pure ZnO, Zn_0.97Nd_0.03O and Zn_0.97Sm_0.03O thin films. These thin films were synthesized by a metallo-organic decomposition method and annealed at 500 °C for 7 h. Rietveld refinement of the XRD data results in a wurtzite ZnO structure with Nd, Sm doping. The dopants and nanoparticle size are responsible for wurtzite structural deformation, inducing lattice strain effect, which may influence the band gap energy and high-T_C ferromagnetism of ZnO. The average size of ZnO nanoparticles with Nd, Sm doping is 10 nm, confirmed with atomic force microscopy. The Raman spectra confirm the wurtzite structure of ZnO with crystalline quality and lattice defect formation with dopant Nd, Sm ions. A near-band-edge emission due to band gap energy is evaluated with photoluminescence spectra, which also involved multiple visible emissions due to oxygen vacancies. The oxygen vacancies-mediated magnetic interactions impart room temperature ferromagnetism in pure ZnO which is enhanced with Nd, Sm doping. The electron paramagnetic resonance spectra revealed the effects of defects and unpaired electrons responsible for observed room temperature ferromagnetism. The zero field cooling and field cooling magnetic measurements include antiferromagnetic interactions without any spin-glass formation. The observed ferromagnetism also correlates with first principle calculations reported for Nd, Sm-doped ZnO and suggests long-range ferromagnetic ordering attributed to defect carriers. The Nd, Sm doping into ZnO thin films significantly enhances absorption in the UV region and suggests its usability for UV detectors. Under UV irradiation (λ = 325 nm), the value of photocurrent in Nd, Sm:ZnO thin films is highly enhanced for possible use in UV sensors.