Low temperature atomic layer deposition of zirconium oxide for inkjet printed transistor applications

Resolving the Heat Generated from ZrO2 Atomic Layer Deposition Surface Reactions

In situ pyroelectric calorimetry and spectroscopic ellipsometry were used to investigate surface reactions in atomic layer deposition (ALD) of zirconium oxide (ZrO₂ ). Calibrated and time-resolved in situ ALD calorimetry provides new insights into the thermodynamics and kinetics of saturating surface reactions for tetrakis(dimethylamino)zirconium(IV) (TDMAZr) and water. The net ALD reaction heat ranged from 0.197 mJ cm^-2 at 76 °C to 0.155 mJ cm^-2 at 158 °C, corresponding to an average of 4.0 eV/Zr at all temperatures. A temperature dependence for reaction kinetics was not resolved over the range investigated. The temperature dependence of net reaction heat and distribution among metalorganic and oxygen source exposure is attributed to factors including growth rate, equilibrium surface hydroxylation, and the extent of the reaction. ZrO₂ -forming surface reactions were investigated computationally using DFT methods to better understand the influence of surface hydration on reaction thermodynamics.

Oxidative dehydrogenation of cyclohexene on atomically precise subnanometer Cu4-nPdn (0 ≤ n ≤ 4) tetramer clusters: the effect of cluster composition and support on performance

The pronounced effects of the composition of four-atom monometallic Cu and Pd and bimetallic CuPd clusters and the support on the catalytic activity and selectivity in the oxidative dehydrogenation of cyclohexene are reported. The ultra-nanocrystalline diamond supported clusters are highly active and dominantly produce benzene; some of the mixed clusters also produce cyclohexadiene, which are all clusters with a much suppressed combustion channel. The also highly active TiO₂-supported tetramers solely produce benzene, without any combustion to CO₂. The selectivity of the zirconia-supported mixed CuPd clusters and the monometallic Cu cluster is entirely different; though they are less active in comparison to clusters with other supports, these clusters produce significant fractions of cyclohexadiene, with their selectivity towards cyclohexadiene gradually increasing with the increasing number of copper atoms in the cluster, reaching about 50% for Cu₃Pd₁. The zirconia-supported copper tetramer stands out from among all the other tetramers in this reaction, with a selectivity towards cyclohexadiene of 70%, which far exceeds those of all the other cluster-support combinations. The findings from this study indicate a positive effect of copper on the stability of the mixed tetramers and potential new ways of fine-tuning catalyst performance by controlling the composition of the active site and via cluster-support interactions in complex oxidative reactions under the suppression of the undesired combustion of the feed.

Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors

Atomic layer deposition (ALD) is a deposition technique well-suited to produce high-quality thin film materials at the nanoscale for applications in transistors. This review comprehensively describes the latest developments in ALD of metal oxides (MOs) and chalcogenides with tunable bandgaps, compositions, and nanostructures for the fabrication of high-performance field-effect transistors. By ALD various n-type and p-type MOs, including binary and multinary semiconductors, can be deposited and applied as channel materials, transparent electrodes, or electrode interlayers for improving charge-transport and switching properties of transistors. On the other hand, MO insulators by ALD are applied as dielectrics or protecting/encapsulating layers for enhancing device performance and stability. Metal chalcogenide semiconductors and their heterostructures made by ALD have shown great promise as novel building blocks to fabricate single channel or heterojunction materials in transistors. By correlating the device performance to the structural and chemical properties of the ALD materials, clear structure-property relations can be proposed, which can help to design better-performing transistors. Finally, a brief concluding remark on these ALD materials and devices is presented, with insights into upcoming opportunities and challenges for future electronics and integrated applications.

Synthesis of Printable Polyvinyl Alcohol for Aerosol Jet and Inkjet Printing Technology

Polyvinyl Alcohol (PVA) is a promising polymer due to its high solubility with water, availability in low molecular weight, having short polymer chain, and cost-effectiveness in processing. Printed technology is gaining popularity to utilize processible solution materials at low/room temperature. This work demonstrates the synthesis of PVA solution for 2.5% w/w, 4.5% w/w, 6.5% w/w, 8.5% w/w and 10.5% w/w aqueous solution was formulated. Then the properties of the ink, such as viscosity, contact angle, surface tension, and printability by inkjet and aerosol jet printing, were investigated. The wettability of the ink was investigated on flexible (Kapton) and non-flexible (Silicon) substrates. Both were identified as suitable substrates for all concentrations of PVA. Additionally, we have shown aerosol jet printing (AJP) and inkjet printing (IJP) can produce multi-layer PVA structures. Finally, we have demonstrated the use of PVA as sacrificial material for micro-electro-mechanical-system (MEMS) device fabrication. The dielectric constant of printed PVA is 168 at 100 kHz, which shows an excellent candidate material for printed or traditional transistor fabrication.

Inkjet-Printed Graphene-Based 1 × 2 Phased Array Antenna

Low-cost and conformal phased array antennas (PAAs) on flexible substrates are of particular interest in many applications. The major deterrents to developing flexible PAA systems are the difficulty in integrating antenna and electronics circuits on the flexible surface, as well as the bendability and oxidation rate of radiating elements and electronics circuits. In this research, graphene ink was developed from graphene flakes and used to inkjet print the radiating element and the active channel of field effect transistors (FETs). Bending and oxidation tests were carried out to validate the application of printed flexible graphene thin films in flexible electronics. An inkjet-printed graphene-based 1 × 2 element phased array antenna was designed and fabricated. Graphene-based field effect transistors were used as switches in the true-time delay line of the phased array antenna. The graphene phased array antenna was 100% inkjet printed on top of a 5 mil flexible Kapton® substrate, at room temperature. Four possible azimuth steering angles were designed for -26.7°, 0°, 13°, and 42.4°. Measured far-field patterns show good agreement with simulation results.

Low-temperature atomic layer deposition of Al2O3/alucone nanolaminates for OLED encapsulation

Thin film encapsulation (TFE) is one of the key problems that hinders the lifetime and widespread commercialization of flexible organic light-emitting diodes (OLEDs). In this work, TFE of OLEDs with Al2O3/alucone laminates grown by atomic layer deposition (ALD) and molecular layer deposition (MLD) as moisture barriers were demonstrated. The barrier performances of Al2O3/alucone laminates with respect to the individual layer thickness and the number of dyads were investigated. It was found that alucone with suitable layer thickness could reduce the permeation to the defect zones of the inorganic layer by prolonging the permeation pathway, sequentially improving the moisture barrier performance. The water vapor transmission rate (WVTR) could be further lowered with increasing the number of dyads of the laminates, the WVTR value reached 1.44 × 10-4 g per m2 per day for laminates with 5.5 dyads. These laminates were incorporated in OLEDs with pixel define layer (PDL), and were found to be able to evidently prolong the lifetime of the OLED.