Three dimensional localization of unintentional oxygen impurities in gallium nitride

Atomistic Origins of Various Luminescent Centers and n-Type Conductivity in GaN: Exploring the Point Defects Induced by Cr, Mn, and O through an Ab Initio Thermodynamic Approach

GaN is a technologically indispensable material for various optoelectronic properties, mainly due to the dopant-induced or native atomic-scale point defects that can create single photon emitters, a range of luminescence bands, and n- or p-type conductivities. Among the various dopants, chromium and manganese-induced defects have been of particular interest over the past few years, because some of them contribute to our present-day light-emitting diode (LED) and spintronic technologies. However, the nature of such atomistic centers in Cr and Mn-doped GaN is yet to be understood. A comprehensive defect thermodynamic analysis of Cr- and Mn-induced defects is essential for their engineering in GaN crystals because by mapping out the defect stabilities as a function of crystal growth parameters, we can maximize the concentration of the target point defects. We therefore investigate chromium and manganese-induced defects in GaN with ab initio methods using the highly accurate exchange-correlation hybrid functionals, and the phase transformations upon excess incorporation of these dopants using the CALPHAD method. We also investigate the impact of oxygen codoping that can be unintentionally incorporated during crystal growth. Our analysis sheds light on the atomistic cause of the unintentional n-type conductivity in GaN, being ON-related. In the case of Cr doping, the formation of CrGa defects is the most dominant, with an E +/0 charge transition at E VBM + 2.19 eV. Increasing nitrogen partial pressure tends to enhance the concentration of CrGa. However, in the case of doping with Mn, several different Mn-related centers can form depending on the growth conditions, with MnGa being the most dominant. MnGa possesses the E 2+/+, E +/0, and E 0/- charge transitions at 0.56, 1.04, and 2.10 eV above the VBM. The incorporation of oxygen tends to cause the formation of the MnGa-VGa center, which explains a series of prior experimental observations in Mn-doped GaN. We provide a powerful tool for point defect engineering in wide band gap binary semiconductors that can be readily used to design optimal crystal growth protocols.

Nanostars in Highly Si-Doped GaN

Understanding the relation between surface morphology during epitaxy of GaN:Si and its electrical properties is important from both the fundamental and application perspectives. This work evidences the formation of nanostars in highly doped GaN:Si layers with doping level ranging from 5 × 10¹⁹ to 1 × 10²⁰ cm^-3 grown by plasma-assisted molecular beam epitaxy (PAMBE). Nanostars are 50-nm-wide platelets arranged in six-fold symmetry around the [0001] axis and have different electrical properties from the surrounding layer. Nanostars are formed in highly doped GaN:Si layers due to the enhanced growth rate along the a-direction ⟨112̅0⟩. Then, the hexagonal-shaped growth spirals, typically observed in GaN grown on GaN/sapphire templates, develop distinct arms that extend in the a-direction ⟨112̅0⟩. The nanostar surface morphology is reflected in the inhomogeneity of electrical properties at the nanoscale as evidenced in this work. Complementary techniques such as electrochemical etching (ECE), atomic force microscopy (AFM), and scanning spreading resistance microscopy (SSRM) are used to link the morphology and conductivity variations across the surface. Additionally, transmission electron microscopy (TEM) studies with high spatial resolution composition mapping by energy-dispersive X-ray spectroscopy (EDX) confirmed about 10% lower incorporation of Si in the hillock arms than in the layer. However, the lower Si content in the nanostars cannot solely be responsible for the fact that they are not etched in ECE. The compensation mechanism in the nanostars observed in GaN:Si is discussed to be an additional contribution to the local decrease in conductivity at the nanoscale.

Quantification of Trace-Level Silicon Doping in Al x Ga1-xN Films Using Wavelength-Dispersive X-Ray Microanalysis

Wavelength-dispersive X-ray (WDX) spectroscopy was used to measure silicon atom concentrations in the range 35-100 ppm [corresponding to (3-9) × 1018 cm-3] in doped AlxGa1-xN films using an electron probe microanalyser also equipped with a cathodoluminescence (CL) spectrometer. Doping with Si is the usual way to produce the n-type conducting layers that are critical in GaN- and AlxGa1-xN-based devices such as LEDs and laser diodes. Previously, we have shown excellent agreement for Mg dopant concentrations in p-GaN measured by WDX with values from the more widely used technique of secondary ion mass spectrometry (SIMS). However, a discrepancy between these methods has been reported when quantifying the n-type dopant, silicon. We identify the cause of discrepancy as inherent sample contamination and propose a way to correct this using a calibration relation. This new approach, using a method combining data derived from SIMS measurements on both GaN and AlxGa1-xN samples, provides the means to measure the Si content in these samples with account taken of variations in the ZAF corrections. This method presents a cost-effective and time-saving way to measure the Si doping and can also benefit from simultaneously measuring other signals, such as CL and electron channeling contrast imaging.

MASS SPECTROMETRY-BASED TECHNIQUES FOR DIRECT QUANTIFICATION OF HIGH IONIZATION ENERGY ELEMENTS IN SOLID MATERIALS-CHALLENGES AND PERSPECTIVES

The determination of nonmetals, first of all, the most electronegative ones-nitrogen, oxygen, fluorine, chlorine, and bromine, poses the highest challenge for element analysis. These elements are characterized by high reactivity, volatility, high ionization energy, and the absence of intensive spectral lines in the optical spectral range. Conventional techniques of their quantification include considerable "wet chemistry" stages so the application of these techniques for the solid sample is highly laborious and prone to uncontrollable uncertainties. Additionally, current development in material science and other areas requires the quantification of the elements at lower levels with good sensitivity. Owing to their robustness and flexibility, mass spectrometry techniques provide vast possibilities for the quantification, spatial and isotopic analysis, including the solutions for direct analysis of solids. The current review focuses on the application of major mass spectrometric techniques for the quantification of N, O, F, Cl, and Br in solid samples. The following techniques are mainly considered: thermal ionization mass spectrometry (TIMS), isotope-ratio MS (IRMS), secondary ion MS (SIMS), inductively coupled plasma MS (ICP-MS), and glow discharge MS (GDMS); as the most accessible and widely applied for the purpose. General ionization issues, advantages, limitations, and novel methodological solutions are discussed. © 2020 John Wiley & Sons Ltd.

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

GaN epitaxially grown on Si is a material for power electronics that intrinsically shows a high density of dislocations. We show by Conductive Atomic Force Microscopy (C-AFM) and Defect Selective Etching that even for materials with similar total dislocation densities substantially different subsets of dislocations with screw component act as current leakage paths within the AlGaN barrier under forward bias. Potential reasons are discussed and it will be directly shown by an innovative experiment that current voltage forward characteristics of AlGaN/GaN Schottky diodes shift to lower absolute voltages when such dislocations are present within the device. A local lowering of the Schottky barrier height around conductive dislocations is identified and impurity segregation is assumed as responsible root cause. While dislocation related leakage current under low reverse bias could not be resolved, breakdown of AlGaN/GaN Schottky diodes under high reverse bias correlates well with observed conductive dislocations as measured by C-AFM. If such dislocations are located near the drain side of the gate edge, failure of the gate in terms of breakdown or formation of percolation paths is observed for AlGaN/GaN high electron mobility transistors.