Computational investigations of the metal/semiconductor NbS2/boron phosphide van der Waals heterostructure: effects of an electric field

In this work, we design computationally the metal-semiconductor NbS2/BP heterostructure and investigate its atomic structure, electronic properties and contact barrier using first-principles prediction. Our results show that the M-S NbS2/BP heterostructure is energetically stable and is characterized by weak vdW interactions. Interestingly, we find that the combination of the metallic NbS2 and semiconducting BP layers leads to the formation of a M-S contact. The M-S NbS2/BP heterostructure exhibits a p-type Schottky contact and a low tunneling-specific resistivity of 3.98 × 10-10 Ω cm2, indicating that the metallic NbS2 can be considered as an efficient 2D electrical contact to the semiconducting BP layer to design NbS2/BP heterostructure-based electronic devices with high charge injection efficiency. The contact barrier and contact type in the M-S NbS2/BP heterostructure can be adjusted by applying an external electric field. The conversion from p-type ShC to n-type ShC can be achieved by applying a negative electric field, while the transformation from ShC to OhC type can be achieved under the application of a positive electric field. The conversion between p-type and n-type ShC and ShC to OhC type in the NbS2/BP heterostructure demonstrates that it can be considered as a promising material for next-generation electronic devices.

First principles study of BAs/MoSi2N4 van der Waals heterostructure: tunable electronic and optical properties via vertical strain

Constructing van der Waals heterostructures from layered materials can form new optoelectronic devices with superior performance to the individual monolayers. Here, we use first-principles calculations to explore the modulation of a two-dimensional BAs/MoSi2N4 van der Waals heterostructure via strain, including the structure stabilities, electronic properties, charge transfer, and optical properties. Our calculated results reveal that the BAs/MoSi2N4 heterostructure has a direct bandgap of 0.72 eV and type-I band alignment. In addition, the BAs/MoSi2N4 heterostructure exhibits enhanced light absorption in the visible light region. The electronic properties of the BAs/MoSi2N4 heterostructure are tunable by vertical strain, exhibiting a direct to indirect bandgap transition as well as a type-I to type-II band alignment transition when the vertical distance is reduced. Our research provides a comprehensive understanding of the electronic and optical properties of the BAs/MoSi2N4 heterostructure and could be helpful for their potential applications in optoelectronic devices.

Two-dimensional Janus pentagonal MSeTe (M = Ni, Pd, Pt): promising water-splitting photocatalysts and optoelectronic materials

Inspired by the interesting and novel properties exhibited by Janus transition metal dichalcogenides (TMDs) and two-dimensional pentagonal structures, we here investigated the structural stability, mechanical, electronic, photocatalytic, and optical properties for a class of two-dimensional (2D) pentagonal Janus TMDs, namely penta-MSeTe (M = Ni, Pd, Pt) monolayers, by using density functional theory (DFT) combined with Hubbard's correction (U). Our results showed that these monolayers exhibit good structural stability, appropriate band structures for photocatalysts, high visible light absorption, and good photocatalytic applicability. The calculated electronic properties reveal that the penta-MSeTe are semiconductors with a bandgap range of 2.06-2.39 eV, and their band edge positions meet the requirements for water-splitting photocatalysts in various environments (pH = 0-13). We used stress engineering to seek higher solar-to-hydrogen (STH) efficiency in acidic (pH = 0), neutral (pH = 7) and alkaline (pH = 13) environments for penta-MSeTe from 0% to +8% biaxial and uniaxial strains. Our results showed that penta-PdSeTe stretched 8% along the y direction and demonstrates an STH efficiency of up to 29.71% when pH = 0, which breaks the theoretical limit of the conventional photocatalytic model. We also calculated the optical properties and found that they exhibit high absorption (13.11%) in the visible light range and possess a diverse range of hyperbolic regions. Hence, it is anticipated that penta-MSeTe materials hold great promise for applications in photocatalytic water splitting and optoelectronic devices.

Electronic structures, transport properties, and optical absorption of bilayer blue phosphorene nanoribbons

Based on first-principles density functional theory and nonequilibrium Green's function, we study the electronic band structures, the electronic transport properties, and the optical absorption of bilayer blue phosphorene nanoribbons (BPNRs). Both bilayer armchair BPNRs (a-BPNRs) and zigzag BPNRs (z-BPNRs) behave as semiconductors in the narrow nanoribbon case and metals in the wide nanoribbon case, sharply different from their monolayer counterparts where the monolayer a-BPNRs (z-BPNRs) are always semiconducting (metallic). This indicates that interlayer couplings or the increasing layer number may induce the switching of the conductivity of the monolayer BPNRs, which is absent in graphene and phosphorene nanoribbons. Furthermore, we explore the edge states of the energy bands near Fermi energy, and find that there are almost no pure edge-state band branches in the bilayer BPNRs, which can be attributed to the interlayer couplings between the edge-states in one layer and the bulk-states in the other. Consequently, the resulting complex band structures cannot be directly analyzed any more in the framework of the two-body coupling picture just according to the simple band structures of the monolayer BPNRs. Finally, we present the current-voltage characteristics and the optical absorption of the bilayer a-BPNRs and z-BPNRs. The influences of the nanoribbon width and the interlayer couplings on the current and the anisotropic optical absorption can be understood based on the complex energy band structures. This research should be an important reference of extending the field of BPNRs from the monolayer to the bilayer case, and deepen the understanding of the difference between the monolayer and bilayer nanoribbons in different materials.

Two Janus Ga2STe monolayers and their electronic, optical, and photocatalytic properties

Recently, two-dimensional Janus materials have attracted increasing interest due to their unique structure and novel properties. Based on density-functional and many-body perturbation theories (i.e. DFT + G₀W₀ + BSE methods), the electronic, optical, and photocatalytic properties of Janus Ga₂STe monolayers with two configurations are explored systematically. It is found that the two Janus Ga₂STe monolayers exhibit high dynamical and thermal stabilities and have desirable direct gaps of about 2 eV at the G₀W₀ level. Their optical absorption spectra are dominated by the enhanced excitonic effects, in which bright bound excitons possess moderate binding energies of about 0.6 eV. Most interestingly, Janus Ga₂STe monolayers show high light absorption coefficients (larger than 10⁶ cm^-1) in the visible light region, effective spatial separation of photoexcited carriers, and suitable band edge positions, which make them potential candidates for photoelectronic and photocatalytic devices. These observed findings enrich the deep understanding of the properties of Janus Ga₂STe monolayers.

Strain-induced ultrahigh power conversion efficiency in BP-MoSe2vdW heterostructure

Photocatalytic water splitting is a promising method for hydrogen production, and the search for efficient photocatalysts has received extensive attention. Two-dimensional van der Waals (vdW) heterostructures have recently been considered excellent candidates for photocatalytic water splitting. In this work, a BP-MoSe₂vdW heterostructure composed of a blue phosphorus (BP) and MoSe₂monolayer was studied as a potential photocatalyst for water splitting using first-principles calculations. The results show that the heterostructure has a type-II band structure, and the band edges straddle water redox potentials under biaxial strains from -3% to 2%, satisfying the requirements for photocatalytic water splitting. In addition, the heterostructure has excellent power conversion efficiency (PCE) and strong optical absorption in both visible light and near-ultraviolet region, indicating that it is a very promising candidate for photocatalytic water splitting. Specifically, the PCE was enhanced to ∼20.2% under a tensile strain of 2%. The Gibbs free energy profiles indicate that BP-MoSe₂vdW heterostructure exhibits good catalytic performance in hydrogen and oxygen evolution reactions. In particular, high carrier mobility implies that the transfer of carriers to reactive sites is easy, and the recombination probability of photogenerated electron-hole pairs is reduced.

A first-principles study on the electronic, piezoelectric, and optical properties and strain-dependent carrier mobility of Janus TiXY (X ≠ Y, X/Y = Cl, Br, I) monolayers

Janus transition metal dichalcogenide monolayers (TMDs) have attracted wide attention due to their unique physical and chemical properties since the successful synthesis of the MoSSe monolayer. However, the related studies of Janus monolayers of transition metal halides (TMHs) with similar structures have rarely been reported. In this article, we systematically investigate the electronic properties, piezoelectric properties, optical properties, and carrier mobility of new Janus TiXY (X ≠ Y, X/Y = Cl, Br, I) monolayers using first principles calculations for the first time. These Janus TiXY monolayers are thermally, dynamically, and mechanically stable, and their energy bands near the Fermi level (E_F) are almost entirely contributed by the central Ti atom. Besides, the Janus TiXY monolayers exhibit excellent in-plane and out-of-plane piezoelectric effects, especially with an in-plane piezoelectric coefficient of ∼4.58 pm V^-1 for the TiBrI monolayer and an out-of-plane piezoelectric coefficient of ∼1.63 pm V^-1 for the TiClI monolayer, suggesting their promising applications in piezoelectric sensors and energy storage applications. The absorption spectra of Janus TiXY monolayers are mainly distributed in the visible and infrared regions, implying that they are fantastic candidates for photoelectric and photovoltaic applications. The obtained carrier mobilities revealed that TiXY monolayers are hole-type semiconductors. Under uniaxial compressive strain, the hole mobilities of these monolayers are gradually improved, indicating that TiXY monolayers have potential applications in the field of flexible electronic devices.

The SWSe-BP vdW Heterostructure as a Promising Photocatalyst for Water Splitting with Power Conversion Efficiency of 19.4

Hydrogen generation by photocatalytic water splitting has drawn enormous research attention for converting sunlight and water into clean and green hydrogen fuel. However, the search for a high efficiency photocatalyst for water splitting is a key challenge. Two dimensional (2D) van der Waals (vdW) heterostructures as photocatalysts exhibit many advantages over the stacked original materials. In this article, we designed two novel 2D vdW heterostructures composed of WSSe and blue phosphorene (BP) monolayers, SWSe-BP and SeWS-BP, which are thermodynamically stable at room temperature. Using first-principles calculations, we found that the SWSe-BP vdW heterostructure can act as a potential photocatalyst for water splitting due to its robust stabilities, type-II band alignment, moderate bandgap, and suitable band edge positions for the redox reactions of water splitting, strong optical absorption, and excellent power conversion efficiency (PCE). Remarkably, the PCE of the SWSe-BP vdW heterostructure can achieve approximately 19.4% under a 3% biaxial tensile strain.

Asymmetric Nanofractures Determined the Nonreciprocal Peeling for Self-Aligned Heterostructure Nanogaps and Devices

Planar heterostructures composed of two or more adjacent structures with different materials are a kind of building blocks for various applications in surface plasmon resonance sensors, rectifiers, photovoltaic devices, and ambipolar devices, but their reliable fabrication with controllable shape, size, and positioning accuracy remains challenging. In this work, we propose a concept for fabricating planar heterostructures via directional stripping and controlled nanofractures of metallic films, with which self-aligned, multimaterial, multiscale heterostructures with arbitrary geometries and sub-20 nm gaps can be obtained. By using a split ring as the template, the asymmetric nanofracture of the deposited film at the split position results in nonreciprocal peeling of the film in the split ring. Compared to the conventional processes, the final heterostructures are defined only by their outlines, thus providing the ability to fabricate complex heterostructures with higher resolutions. We demonstrate that this method can be used to fabricate heterodimers, multimaterial oligomers, and multiscale asymmetrical electrodes. An Ag-MoS₂-Au photodiode with a strong rectification effect is fabricated based on the nanogap heterostructures prepared by this method. This technology provides a unique and reliable approach to define nanogap heterostructures, which are supposed to have potential applications in nanoelectronics, nanoplasmonics, nano-optoelectronics, and electrochemistry.

Structure and electronic properties of MoSe2/PtS2 van der Waals heterostructure

Structure and electronic properties of MoSe2/PtS2 van der Waals heterostructure and their dependence on the interlayer coupling, biaxial strain and external electric field are systematically investigated by using the first-principles...

Vertically stacked GaN/WX2 (X = S, Se, Te) heterostructures for photocatalysts and photoelectronic devices

Tremendous attention has been paid to vertically stacked heterostructures owing to their tunable electronic structures and outstanding optical properties. In this work, we explore the structural, electronic and optical properties of vertically stacked GaN/WX₂ (X = S, Se, Te) heterostructures using density functional theory. We find that these stacking heterostructures are all semiconductors with direct band gaps of 1.473 eV (GaN/WTe₂), 2.102 eV (GaN/WSe₂) and 1.993 eV (GaN/WS₂). Interestingly, the GaN/WS₂ heterostructure exhibits a type-II band alignment, while the other two stackings of GaN/WSe₂ and GaN/WTe₂ heterostructures have type-I band alignment. The optical absorption of GaN/WX₂ heterostructures is very efficient in the visible light spectrum. Our results suggest that GaN/WX₂ heterostructures are promising candidates for photocatalytic water splitting and photoelectronic devices in visible light.

Predicted intrinsic piezoelectric ferromagnetism in Janus monolayer MnSbBiTe4: a first principles study

Two-dimensional (2D) piezoelectric ferromagnetism (PFM) is essential for the development of the next-generation multifunctional spintronic technologies. Recently, the layered van der Waals (vdW) compound MnBi₂Te₄ as a platform to realize the quantum anomalous Hall effect (QAHE) has attracted great interest. In this work, the Janus monolayer MnSbBiTe₄ with dynamic, mechanical and thermal stabilities is constructed from a synthesized non-piezoelectric MnBi₂Te₄ monolayer by replacing the top Bi atomic layer with Sb atoms. The calculated results show that monolayer MnSbBiTe₄ is an intrinsic ferromagnetic (FM) semiconductor with a gap value of 0.25 eV, whose easy magnetization axis is out-of-plane direction with magnetic anisotropy energy (MAE) of 158 μeV per Mn. The predicted Curie temperature T_C is about 20.3 K, which is close to that of monolayer MnBi₂Te₄. The calculated results show that the in-plane d₁₁ is about 5.56 pm V^-1, which is higher than or comparable to those of other 2D known materials. Moreover, it is found that strain engineering can effectively tune the piezoelectric properties of Janus monolayer MnSbBiTe₄. The calculated results show that tensile strain can improve the d₁₁, which is improved to be 21.16 pm V^-1 at only 1.04 strain. It is proved that the ferromagnetic order, semiconducting properties, out-of-plane easy axis and a large d₁₁ are robust against electronic correlations. Our work provides a possible way to achieve PFM with a large d₁₁ in well-explored vdW compound MnBi₂Te₄, which makes it possible to use the piezoelectric effect to tune the quantum transport process.

Silicene/ZnI2van der Waals heterostructure: tunable structural and electronic properties

By utilizingab initiodensity functional theory, the structural and electronic properties of novel silicene/ZnI₂heterobilayers (HBLs) were investigated. Constructing HBLs with ZnI₂in different stacking configurations leads to direct bandgap opening of silicene at K point, which ranges from 138.2 to 201.2 meV. By analyzing the projected density of states and charge density distribution, we found that the predicted HBLs conserve the electronic properties of silicene and ZnI₂can serve as a decent substrate. The tunability of electronic properties can be achieved by enforcing biaxial strain and by varying interlayer distance where bandgap can get as low as zero to as high as 318.8 meV and 290.7 meV, respectively depending on the stacking patterns. Maintenance of the remarkable features of silicene, high mobility of charge carriers, and fine-tuning of bandgap pave the way to construct new nanoelectronic devices using these novel silicene/ZnI₂HBLs.

Stacking effects in van der Waals heterostructures of blueP and Janus XYO (X = Ti, Zr, Hf: Y = S, Se) monolayers

Using first-principles calculations, the geometry, electronic structure, optical and photocatalytic performance of blueP and XYO (X = Ti, Zr, Hf; Y = S, Se) monolayers and their corresponding van der Waal heterostructures in three possible stacking patterns, are investigated. BlueP and XYO (X = Ti, Zr, Hf; Y = S, Se) monolayers are indirect bandgap semiconductors. A tensile strain of 8(10)% leads to TiSeO(ZrSeO) monolayers transitioning to a direct bandgap of 1.30(1.61) eV. The calculated binding energy and AIMD simulation show that unstrained(strained) blueP and XYO (X = Ti, Zr, Hf; Y = S, Se) monolayers and their heterostructures are thermodynamically stable. Similar to the corresponding monolayers, blueP-XYO (X = Ti, Zr, Hf: Y = S, Se) vdW heterostructures in three possible stacking patterns are indirect bandgap semiconductors with staggered band alignment, except blueP-TiSeO vdW heterostructure, which signifies straddling band alignment. Absorption spectra show that optical transitions are dominated by excitons for blueP and XYO (X = Ti, Zr, Hf; Y = S, Se) monolayers and the corresponding vdW heterostructures. Both E VB and E CB in TiSO, ZrSO, ZrSeO and HfSO monolayers achieve energetically favorable positions, and therefore, are suitable for water splitting at pH = 0, while TiSeO and HfSeO monolayers showed good response for reduction and fail to oxidise water. All studied vdW heterostructures also show good response to any produced O2, while specific stacking reduces H+ to H2.

Two-dimensional blue phosphorene–BAs vdW heterostructure with optical and photocatalytic properties: a first-principles study

In this work, we investigated the electronic, optical and photocatalytic properties of a blue phosphorene–BAs (BlueP–BAs) vdW heterostructure using first-principles calculations.

Adjustable electronic and optical properties of BlueP/MoS2 van der Waals heterostructure by external strain: a first-principles study

Blue phosphorene (BlueP) has been widely researched recently as a potential material for novel photocatalytic and electronic devices. In this letter, due to its similar in-plane hexagonal lattice structure to MoS₂, BlueP/MoS₂ van der Waals heterostructures were built in six configurations. The II-stacking configuration was the most stable due to the lowest binding energy obtained from the calculation results. Furthermore, by controlling the external vertical strain, the geometry structures were optimized and the electronic structures of the BlueP/MoS₂ heterostructure were modulated. We found that when the interlayer distance was 3.71 Å, the structure was the most optimized. In addition, as the result of charge transfer at the interlayer, a built-in electric field was formed in the BlueP/MoS₂ heterostructure, which explained the formation of the type-II band alignment structure. The optical properties results show that the BlueP/MoS₂ heterostructure has a wide optical response range and good light absorption ability, which indicated significant potential for BlueP/MoS₂ heterostructure use in the next generation of photovoltaic devices and water-splitting materials.

Optical absorption and excitation spectra of monolayer blue phosphorene

We study the optical absorption and excitation spectra of monolayer blue phosphorene with two approaches. The first is based on the [Formula: see text] approximation in conjunction with the Bethe-Salpeter equation theory. The second is based on the time-dependent density-functional theory in the adiabatic local density approximation and the random phase approximation. The spectra from the two approaches are quite similar. The optical absorption spectrum is dominated by a single peak at 4.2 eV, which originates from direct interband transitions at the [Formula: see text] point of the Brillouin zone. The excitation spectrum is dominated by a plasmon peak at 9.2 eV, which arises from collective excitations of valence electrons. The plasmon shows a positive dispersion at finite momentum transfer. The in-plane electron is responsible for the optical absorption, whereas the out-of-plane electron is responsible for the plasmon dispersion. Monolayer blue phosphorene has an indirect band gap of 2.98 eV and an exciton binding energy of 1.03 eV.

Octahedrally coordinated single layered CaF2: robust insulating behaviour

Using first-principles calculations, the structural, vibrational, and electronic properties of single-layered calcium fluoride (CaF₂) are investigated. The dynamical stability of 1T-CaF₂ is confirmed by the phonon dispersions. Raman active vibrational modes of 1T-CaF₂ enable its characterization via Raman spectroscopy. In addition, the calculated electronic properties of 1T-CaF₂ confirmed insulating behavior with an indirect wide band gap which is larger than that of a well-known single-layered insulator, h-BN. Moreover, one-dimensional nanoribbons of CaF₂ are investigated for two main edge orientations, namely zigzag and armchair, and it is revealed that both structures maintain the 1T nature of CaF₂ without any structural edge reconstructions. Electronically, both types of CaF₂ nanoribbons display robust insulating behavior with respect to the nanoribbon width. The results show that both the 2D and 1D forms of 1T-CaF₂ show potential in nanoelectronics as an alternative to the widely-used insulator h-BN with its similar properties and wider electronic band gap.

Effects of electric field and strain engineering on the electronic properties, band alignment and enhanced optical properties of ZnO/Janus ZrSSe heterostructures

The formation of van der Waals heterostructures (vdWHs) have recently emerged as promising structures to make a variety of novel nanoelectronic and optoelectronic devices. Here, in this work, we investigate the structural, electronic and optical features of ZnO/ZrSSe vdWHs for different stacking patterns of ZnO/SeZrS and ZnO/SZrSe by employing first-principles calculations. Binding energy and ab initio molecular dynamics calculations are also employed to confirm the structural and thermal stability of the ZnO/ZrSSe vdWHs for both models. We find that in both stacking models, the ZnO and ZrSSe layers are bonded via weak vdW forces, leading to easy exfoliation of the layers. More interestingly, both the ZnO/SeZrS and ZnO/SZrSe vdWHs posses type-II band alignment, making them promising candidates for the use of photovoltaic devices because the photogenerated electrons–holes are separated at the interface. The ZnO/ZrSSe vdWHs for both models possess high performance absorption in the visible and near-infrared regions, revealing their use for acquiring efficient photocatalysts. Moreover, the band gap values and band alignments of the ZnO/ZrSSe for both models can be adjusted by an electric field as well as vertical strains. There is a transformation from semiconductor to metal under a negative electric field and tensile vertical strain. These findings demonstrate that ZnO/ZrSSe vdWHs are a promising option for optoelectronic and nanoelectronic applications.

Here, in this work, we investigate the structural, electronic and optical features of ZnO/ZrSSe vdWHs for different stacking patterns of ZnO/SeZrS and ZnO/SZrSe by employing first-principles calculations.

Tailoring the structural and electronic properties of an SnSe2/MoS2 van der Waals heterostructure with an electric field and the insertion of a graphene sheet

van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.

Determination of optimum optoelectronic properties in vertically stacked MoS2/h-BN/WSe2 van der Waals heterostructures

Inserting an insulator at the interface in vdW heterostructure solar cell unit can improve the photoelectric conversion efficiency, and the insulator has an optimal thickness.

Band alignment and optical features in Janus-MoSeTe/X(OH)2 (X = Ca, Mg) van der Waals heterostructures

van der Waals heterostructures can be effectively used to enhance the electronic and optical properties and extend the application range of two-dimensional materials.