Identifying the Active Sites in MoSi2@MoO3 Heterojunctions for Enhanced Hydrogen Evolution

Developing Two-dimensional (2D) Mo-based heterogeneous nanomaterials is of great significance for energy conversion, especially in alkaline hydrogen evolution reaction (HER), however, it remains a challenge to identify the active sites at the interface due to the structure complexity. Herein, the real active sites are systematically explored during the HER process in varied Mo-based 2D materials by theoretical computational and magnetron sputtering approaches first to filtrate the candidates, then successfully combined the MoSi2 and MoO3 together through Oxygen doping to construct heterojunctions. Benefiting from the synergistic effects between the MoSi2 and MoO3, the obtained MoSi2@MoO3 exhibits an unprecedented overpotential of 72 mV at a current density of 10 mA cm-2. Density functional theory calculations uncover the different Gibbs free energy of hydrogen adsorption (ΔGH*) values achieved at the interfaces with different sites as adsorption sites. The results can facilitate the optimization of heterojunction electrocatalyst design principles for the Mo-based 2D materials.

Ultrafast energy-dispersive soft-x-ray diffraction in the water window with a laser-driven source

Time-resolved soft-x-ray-diffraction experiments give access to microscopic processes in a broad range of solid-state materials by probing ultrafast dynamics of ordering phenomena. While laboratory-based high-harmonic generation (HHG) light sources provide the required photon energies, their limited photon flux is distributed over a wide spectral range, rendering typical monochromatic diffraction schemes challenging. Here, we present a scheme for energy-dispersive soft-x-ray diffraction with femtosecond temporal resolution and photon energies across the water window from 200 to 600 eV. The experiment utilizes the broadband nature of the HHG emission to efficiently probe large slices in reciprocal space. As a proof-of-concept, we study the laser-induced structural dynamics of a Mo/Si superlattice in an ultrafast, non-resonant soft-x-ray diffraction experiment. We extract the underlying strain dynamics from the measured shift of its first order superlattice Bragg peak in reciprocal space at photon energies around 500 eV via soft-x-ray scattering simulations.

Depth-resolved oxidational studies of Be/Al periodic multilayers investigated by X-ray photoelectron spectroscopy

The quantification of surface and subsurface oxidation of Be/Al periodic multilayer mirrors due to exposure in the ambient atmosphere was investigated by depth-resolved X-ray photoelectron spectroscopy. The contribution of oxidation was lower for the thicker layer of Al in the periodic structures since the surface was less chemically reactive for the oxidation. This was investigated by finding the depth-resolved slope of the intensity ratio of metal/oxides (Be/BeO_x and Al/AlO_x) by analyzing the chemical shift of Al 1s and Be 1s photoelectrons. Furthermore, a well-resolved doublet chemical shift in the O 1s spectra indicated the formation of BeO_x/AlO_x and BeOH/AlOH oxides. The investigation showed that the subsurface and surface regions were dominated by metal-hydroxide (BeOH/AlOH) and metal-oxide (BeO_x/AlO_x) bonding, respectively, analyzed by the depth-resolved chemical shifts.

Manifesting Epoxide and Hydroxyl Groups in XPS Spectra and Valence Band of Graphene Derivatives

The derivatization of graphene to engineer its band structure is a subject of significant attention nowadays, extending the frames of graphene material applications in the fields of catalysis, sensing, and energy harvesting. Yet, the accurate identification of a certain group and its effect on graphene's electronic structure is an intricate question. Herein, we propose the advanced fingerprinting of the epoxide and hydroxyl groups on the graphene layers via core-level methods and reveal the modification of their valence band (VB) upon the introduction of these oxygen functionalities. The distinctive contribution of epoxide and hydroxyl groups to the C 1s X-ray photoelectron spectra was indicated experimentally, allowing the quantitative characterization of each group, not just their sum. The appearance of a set of localized states in graphene's VB related to the molecular orbitals of the introduced functionalities was signified both experimentally and theoretically. Applying the density functional theory calculations, the impact of the localized states corresponding to the molecular orbitals of the hydroxyl and epoxide groups was decomposed. Altogether, these findings unveiled the particular contribution of the epoxide and hydroxyl groups to the core-level spectra and band structure of graphene derivatives, advancing graphene functionalization as a tool to engineer its physical properties.

Multilayer Reflective Coatings for BEUV Lithography: A Review

The development of microelectronics is always driven by reducing transistor size and increasing integration, from the initial micron-scale to the current few nanometers. The photolithography technique for manufacturing the transistor needs to reduce the wavelength of the optical wave, from ultraviolet to the extreme ultraviolet radiation. One approach toward decreasing the working wavelength is using lithography based on beyond extreme ultraviolet radiation (BEUV) with a wavelength around 7 nm. The BEUV lithography relies on advanced reflective optics such as periodic multilayer film X-ray mirrors (PMMs). PMMs are artificial Bragg crystals having alternate layers of "light" and "heavy" materials. The periodicity of such a structure is relatively half of the working wavelength. Because a BEUV lithographical system contains at least 10 mirrors, the optics' reflectivity becomes a crucial point. The increasing of a single mirror's reflectivity by 10% will increase the system's overall throughput six-fold. In this work, the properties and development status of PMMs, particularly for BEUV lithography, were reviewed to gain a better understanding of their advantages and limitations. Emphasis was given to materials, design concepts, structure, deposition method, and optical characteristics of these coatings.

Nb Texture Evolution and Interdiffusion in Nb/Si-Layered Systems

In this paper, we present a detailed study on the microstructure evolution and interdiffusion in Nb/Si-layered systems. Interlayer formation during the early stages of growth in sputter-deposited Nb-on-Si and Si-on-Nb bilayer systems is studied in vacuo using a high-sensitivity low-energy ion-scattering technique. An asymmetric intermixing behavior is observed, where the Si-on-Nb interface is ∼2× thinner than the Nb-on-Si interface, and it is explained by the surface-energy difference between Nb and Si. During Nb-on-Si growth, the crystallization of the Nb layer occurs around 2.1 nm as-deposited Nb thickness with a strong Nb(110)-preferred orientation, which is maintained up to 3.3 nm as-deposited Nb thickness. A further increase in the Nb layer thickness above 3.3 nm results in a polycrystalline microstructure with a reduced degree of texture. High-resolution cross-sectional transmission electron microscopy imaging is performed on Nb/Si multilayers to study the effect of the Nb layer texture on interdiffusion during low-temperature annealing. Nb/Si multilayers with amorphous 2 nm Nb layers and strongly textured 3 nm thick Nb layers, with limited grain-boundary pathways for diffusion, show no observable interdiffusion during annealing at 200 °C for 8 h, whereas in a Nb/Si multilayer with polycrystalline 4 nm thick Nb layers, a ∼1 nm amorphous Nb/Si interlayer is formed at the Si-on-Nb interface during annealing.

Inhibition of chemical interaction of molybdenum and silicon in a Mo/Si multilayer structure by the formation of intermediate compounds

In the present study, the formation of intermediate compounds in the Mo/Si multilayer was realized by the introduction of barrier layers at the interfaces. Their impact on the interdiffusion of Mo and Si was analyzed via X-ray photoelectron spectroscopy. It was established that the insertion of a thin Be barrier layer led to the formation of beryllide MoBe12 at the interface Si-on-Mo, which prevented the formation of molybdenum disilicide and improved the interface. The insertion of the B4C barrier layer led to its complete decomposition with the formation of borides and carbides of molybdenum and silicon (MoBx, SiBx, MoxC and SiCx) at the Si-on-Mo interface. The formation of only MoBx and SiCx was detected at the Mo-on-Si interface. It was important that the insertion of a thin B4C barrier layer did not fully prevent the formation of MoSi2 at both (Si-on-Mo and Mo-on-Si) the interfaces. These facts allowed us to assume that the diffusion barrier function of the B4C interlayer could be caused by the stability of the formed compounds, rather than the stability of the B4C layer itself.

Phonon, plasmon and electronic properties of surfaces and interfaces of periodic W/Si and Si/W multilayers

The phonon and plasmon excitations and electronic properties of interfaces of periodic W/Si and Si/W multilayer structures were investigated. The Boson band originated from quasilocal surface acoustic phonons for ultrathin Si layers, excited by Raman scattering. In confined Si layers, a small fraction of crystalline Si nanoclusters were embedded within a large volume fraction of amorphous Si (a-Si) nanoclusters. The size of the a-Si nanoclusters was smaller for the thinner Si layer in the periodic layers. The plasmon energy in the Si layer was blueshifted with a decrease in the thickness of this layer. This was explained by the size-dependent quantization of plasmon shift. The valence band spectra comprised a substantial fine structure, which is associated with the interaction of valence orbitals of the W and Si atoms at the interface boundaries. For thinner Si layers, the binding interaction of W5d and Si3p states leads to the splitting of the density of states near the Fermi level in the energy range of 1.5-5 eV. However, the energy splitting with two maxima was observed at 0.7 and 2.4 eV for thicker layers. Thus, the results of X-ray photoelectron spectroscopy have indicated that the interface of W/Si multilayers consists of metal-enriched tungsten silicide. Both the atomic structure and the elemental composition of the silicide were modified with a change in the thickness of the Si layers. This novel investigation could be essential for designing nanomirrors with higher reflectivity.