1
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Liu YZ, Dai JQ, Yuan J, Zhao MW. The tunneling electroresistance effect in a van der Waals ferroelectric tunnel junction based on a graphene/In 2Se 3/MoS 2/graphene heterostructure. Phys Chem Chem Phys 2023. [PMID: 38047441 DOI: 10.1039/d3cp04408d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/05/2023]
Abstract
In recent years, α-In2Se3 has attracted great attention in miniaturizing nonvolatile random memory devices because of its room temperature ferroelectricity and atomic thickness. In this work, we construct two-dimensional (2D) van der Waals (vdW) heterostructures α-In2Se3/MoS2 with different ferroelectric polarization and design a 2D graphene (Gr)/In2Se3/MoS2/Gr ferroelectric tunnel junction (FTJ) with the symmetric electrodes. Our calculations show that the band alignment of the heterostructures can be changed from type-I to type-II accompanied by the reversal of the ferroelectric polarization of In2Se3. Furthermore, the ferroelectricity persists in Gr/In2Se3/MoS2/Gr vdW FTJs, and the presence of dielectric layer MoS2 in the FTJs enables the effective modulation of the tunneling barrier by altering the ferroelectric polarization of α-In2Se3, which results in two distinct conducting states denoted as "ON" and "OFF" with a large tunneling electroresistance (TER) ratio exceeding 105%. These findings suggest the importance of ferroelectric vdW heterostructures in the design of FTJs and propose a promising route for applying the 2D ferroelectric/semiconductor heterostructures with out-of-plane polarization in high-density ferroelectric memory devices.
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Affiliation(s)
- Yu-Zhu Liu
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| | - Jian-Qing Dai
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| | - Jin Yuan
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| | - Miao-Wei Zhao
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
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2
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Lobanov AD, Korkh YV, Patrakov EI, Gaviko VS, Sarychev MN, Ivanov VY, Kuznetsova TV. Effect of 10 MeV electron irradiation on the electrical properties of bulk α-In 2Se 3 crystals. Phys Chem Chem Phys 2023; 25:25772-25779. [PMID: 37724343 DOI: 10.1039/d3cp03098a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/20/2023]
Abstract
In this work, the effect of 10 MeV electron irradiation on the structure and electrical properties of bulk α-In2Se3 crystals is studied by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray microanalysis, atomic-force microscopy, and Raman spectroscopy methods. Droplets of 200-500 nm in size were detected on the bulk α-In2Se3 crystal surface. The droplets can be formations with the γ-In2Se3 crystalline phase. The current-voltage characteristics measured by conductive atomic-force microscopy are different on and outside the droplets after electron irradiation. On the droplets, slightly better conductive properties were detected after irradiation with the electron fluence of 1015 cm-2. It is found that local resistance increases significantly for both on and outside the droplets after irradiation with the electron fluence of 1017 cm-2. Our study shows that electron irradiation can contribute to the disappearance of ferroelectric domains in the bulk α-In2Se3 crystals. Also, the distribution of surface potentials measured by Kelvin probe force microscopy becomes more uniform after electron irradiation. The results obtained in the work allow us to calculate the operating time of the device containing α-In2Se3 under conditions of long-term electron irradiation with high-energy electrons. The study shows that α-In2Se3 is a very promising material for applications in the aerospace and nuclear industries.
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Affiliation(s)
- Alexey D Lobanov
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620108, Russia.
| | - Yulia V Korkh
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620108, Russia.
| | - Evgeny I Patrakov
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620108, Russia.
| | - Vasily S Gaviko
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620108, Russia.
| | | | | | - Tatyana V Kuznetsova
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620108, Russia.
- Ural Federal University, Yekaterinburg, 620002, Russia
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3
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Zhong F, Nie GZ, Lang Y, Zhang Z, Li H, Gan L, Xu Y, Zhao YQ. First-principles study on photoelectric properties of all-inorganic two-dimensional double perovskite Cs 3AgBiBr 7. Phys Chem Chem Phys 2023; 25:3175-3181. [PMID: 36621958 DOI: 10.1039/d2cp04707a] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/03/2022]
Abstract
Two-dimensional (2D) all-inorganic double perovskite materials have attracted great interest owing to their unique photoelectric characteristics, such as high quantum efficiency and relative stability. However, few studies have been conducted on the 2D all-inorganic double perovskite Cs3AgBiBr7, and its photoelectric properties are unclear. In this study, we present a detailed investigation of the band structure, optical absorption spectrum, carrier mobility and exciton binding energy of the double perovskite Cs3AgBiBr7 based on the first-principles. The results show that this system has an indirect band gap and low carrier mobility, high exciton binding energy (2041.38 meV) and significant light absorption in the UV region. We also find that the material may be a potential exciton insulation candidate owing to the exciton binding energy beyond the band gap. Our calculated results also show that low dimensional perovskite Cs3AgBiBr7 is more suitable for luminescence than a photovoltaic device. We hope our theoretical results will inspire and promote the experimental exploration of 2D all-inorganic double perovskite materials for photoelectric applications.
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Affiliation(s)
- Fang Zhong
- School of Physics and Electronics Science, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China. .,Hunan Provincial key Laboratory of Intelligent Sensors and New Sensor Materials, Xiangtan 411201, Hunan, People's Republic of China
| | - Guo-Zheng Nie
- School of Physics and Electronics Science, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China. .,Hunan Provincial key Laboratory of Intelligent Sensors and New Sensor Materials, Xiangtan 411201, Hunan, People's Republic of China
| | - Yufei Lang
- School of Physics and Electronics Science, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China. .,Hunan Provincial key Laboratory of Intelligent Sensors and New Sensor Materials, Xiangtan 411201, Hunan, People's Republic of China
| | - Ziwen Zhang
- School of Physics and Electronics Science, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China. .,Hunan Provincial key Laboratory of Intelligent Sensors and New Sensor Materials, Xiangtan 411201, Hunan, People's Republic of China
| | - Huilin Li
- School of Physics and Electronics Science, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China. .,Hunan Provincial key Laboratory of Intelligent Sensors and New Sensor Materials, Xiangtan 411201, Hunan, People's Republic of China
| | - Longfei Gan
- School of Microelectronics and Physics, Hunan University of Technology and Business, Changsha 410205, People's Republic of China
| | - Ying Xu
- School of Physics and Electronics Science, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China. .,Hunan Provincial key Laboratory of Intelligent Sensors and New Sensor Materials, Xiangtan 411201, Hunan, People's Republic of China
| | - Yu-Qing Zhao
- School of Physics and Electronics Science, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China. .,Hunan Provincial key Laboratory of Intelligent Sensors and New Sensor Materials, Xiangtan 411201, Hunan, People's Republic of China
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4
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Hu Y, Yang H, Huang J, Zhang X, Tan B, Shang H, Zhang S, Feng W, Zhu J, Zhang J, Shuai Y, Jia D, Zhou Y, Hu P. Flexible Optical Synapses Based on In 2Se 3/MoS 2 Heterojunctions for Artificial Vision Systems in the Near-Infrared Range. ACS APPLIED MATERIALS & INTERFACES 2022; 14:55839-55849. [PMID: 36511344 DOI: 10.1021/acsami.2c19097] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Near-infrared (NIR) synaptic devices integrate NIR optical sensitivity and synaptic plasticity, emulating the basic biomimetic function of the human visual system and showing great potential in NIR artificial vision systems. However, the lack of semiconductor materials with appropriate band gaps for NIR photodetection and effective strategies for fabricating devices with synaptic behaviors limit the further development of NIR synaptic devices. Here, a two-terminal NIR synaptic device consisting of the In2Se3/MoS2 heterojunction has been constructed, and it exhibits fundamental synaptic functions. The reduced band gap and potential barrier of In2Se3/MoS2 heterojunctions are essential for NIR synaptic plasticity. In addition, the NIR synaptic properties of In2Se3/MoS2 heterojunctions under strain have been studied systematically. The ΔEPSC of the In2Se3/MoS2 synaptic device can be improved from 38.4% under no strain to 49.0% under a 0.54% strain with a 1060 nm illumination for 1 s at 100 mV. Furthermore, the artificial NIR vision system consisting of a 10 × 10 In2Se3/MoS2 device array has been fabricated, exhibiting image sensing, learning, and storage functions under NIR illumination. This research provides new ideas for the design of flexible NIR synaptic devices based on 2D materials and presents many opportunities in artificial intelligence and NIR vision systems.
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Affiliation(s)
- Yunxia Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Hongying Yang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Jingtao Huang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - Xin Zhang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Biying Tan
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Huiming Shang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Shichao Zhang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Wei Feng
- Department of Chemistry and Chemical Engineering, College of Science, Northeast Forestry University, Harbin150040, China
| | - Jingchuan Zhu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - Jia Zhang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Yong Shuai
- School of Energy Science and Engineering, Harbin Institute of Technology, Harbin150001, China
| | - Dechang Jia
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - Yu Zhou
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - PingAn Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
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5
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Liu M, Tang Y, Yao H, Bai L, Song J, Ma B. Theoretical study on photocatalytic performance of ZnO/C2N heterostructure towards high efficiency water splitting. Front Chem 2022; 10:1048437. [PMID: 36339040 PMCID: PMC9626801 DOI: 10.3389/fchem.2022.1048437] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Accepted: 09/29/2022] [Indexed: 11/24/2022] Open
Abstract
The construction of van der Waals heterostructures offers effective boosting of the photocatalytic performance of two-dimensional materials. In this study, which uses the first-principles method, the electronic and absorptive properties of an emerging ZnO/C2N heterostructure are systematically explored to determine the structure’s photocatalytic potential. The results demonstrate that ZnO and C2N form a type-II band alignment heterostructure with a reduced band gap, and hence superior absorption in the visible region. Furthermore, the band edge positions of a ZnO/C2N heterostructure meet the requirements for spontaneous water splitting. The ZnO/C2N heterostructure is known to possess considerably improved carrier mobility, which is advantageous in the separation and migration of carriers. The Gibbs free energy calculation confirms the high catalytic activity of the ZnO/C2N heterostructure for water-splitting reactions. All the aforementioned properties, including band gap, band edge positions, and optical absorption, can be directly tuned using biaxial lateral strain. A suitable band gap, decent band edge positions, high catalytic activity, and superior carrier mobility thus identify a ZnO/C2N heterostructure as a prominent potential photocatalyst for water splitting.
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Affiliation(s)
- Meiping Liu
- Henan Key Laboratory of Smart Lighting, Huanghuai University, Zhumadian, Henan, China
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, China
| | - Yong Tang
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, China
- School of Energy Engineering, Huanghuai University, Zhumadian, Henan, China
- *Correspondence: Yong Tang,
| | - Haizi Yao
- School of Energy Engineering, Huanghuai University, Zhumadian, Henan, China
| | - Liuyang Bai
- School of Energy Engineering, Huanghuai University, Zhumadian, Henan, China
| | - Jun Song
- School of Energy Engineering, Huanghuai University, Zhumadian, Henan, China
| | - Benyuan Ma
- School of Energy Engineering, Huanghuai University, Zhumadian, Henan, China
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6
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Li Z, Li D, Xue R, Zang L, Ma H, Guo S, Shi L. Ni-MOL/In 2Se 3 heterostructure construction with mixed metal (Ti/Ni) for efficient photocatalytic tetracycline degradation. CHEMOSPHERE 2022; 291:132743. [PMID: 34743801 DOI: 10.1016/j.chemosphere.2021.132743] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2021] [Revised: 10/27/2021] [Accepted: 10/28/2021] [Indexed: 06/13/2023]
Abstract
To investigate the mechanism of bimetallic 2-dimension (2D) catalyst existing in the current photocatalytic degradation process, the tetracycline (TC) degradation performance and mechanism by bimetallic 2D photocatalyst was studied extensively. Nickel metal-organic layer (Ni-MOL) and In2Se3, a typical 2D semiconductor photocatalyst, shows great potential for photocatalytic degradation of TC. Herein, an In2Se3 assisted Ni-MOL composite bimetallic photocatalyst was assembled, of which could obtain the degradation rate of 96.4% within 90 min for TC under visible light. Ni-MOL was the main active site for TC degradation by photo-induced holes which located at the Ni atom active site during the photocatalytic process. The role of In2Se3 and the element of Ti in Ni-MOL was to assist Ni-MOL by providing more photo-induced carriers and inhibiting carrier recombination. This work makes a contribution to the application of 2D bimetallic photocatalytic in TC degradation.
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Affiliation(s)
- Zuyu Li
- College of Environmental Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250353, China
| | - Da Li
- College of Environmental Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250353, China
| | - Rong Xue
- College of Environmental Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250353, China
| | - Lihua Zang
- College of Environmental Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250353, China
| | - Huifang Ma
- College of Environmental Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250353, China.
| | - Shuangzhen Guo
- College of Environmental Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250353, China.
| | - Linglong Shi
- College of Environmental Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250353, China
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7
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Li Z, Ma H, Zang L, Li D, Guo S, Shi L. Construction of nano-flower MIL-125(Mo)-In2Se3 Z-scheme heterojunctions by one-step solvothermal method for removal of tetracycline from wastewater in the synergy of adsorption and photocatalysis way. Sep Purif Technol 2021. [DOI: 10.1016/j.seppur.2021.119355] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/22/2023]
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8
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Chen YL, Yan DN, Zeng MW, Liao CS, Cai MQ. 2D and 3D double perovskite with dimensionality-dependent optoelectronic properties: first-principle study on Cs 2AgBiBr 6and Cs 4AgBiBr 8. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:065501. [PMID: 34715688 DOI: 10.1088/1361-648x/ac34ae] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/22/2021] [Accepted: 10/29/2021] [Indexed: 06/13/2023]
Abstract
Recently, the effect of dimensional control on the optoelectronic performance of two-dimensional (2D)/three-dimensional (3D) single perovskites has been confirmed. However, how the dimensional change affects the photoelectric properties of 2D/3D all-inorganic double perovskites remains unclear. In this study, we present a detailed theoretical research on a comparison between the optoelectronic properties of 3D all-inorganic double perovskite Cs2AgBiBr6and recently reported 2D all-inorganic double perovskite Cs4AgBiBr8with Ruddlesden-Popper (RP) structure based on density functional theory calculations. The results demonstrate the charge carrier mobility and absorption coefficients in the visible spectrum of Cs4AgBiBr8(2D) is poorer than Cs2AgBiBr6(3D). Moreover, the value of exciton-binding energy for 2D RP all-inorganic double perovskite Cs4AgBiBr8(720 meV) is 3 times larger than that of 3D all-inorganic double perovskite Cs2AgBiBr6(240 meV). Our works indicate that Cs4AgBiBr8(2D) is a promising material for luminescent device, while Cs2AgBiBr6(3D) may be suitable for photovoltaic applications. This study provides a theoretical guidance for the understanding of 2D RP all-inorganic double perovskite with potential applications in photo-luminescent devices.
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Affiliation(s)
- Yan-Long Chen
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Dan-Ni Yan
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Ming-Wei Zeng
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Cheng-Sheng Liao
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Meng-Qiu Cai
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
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Pan LY, Ding YF, Liu HQ, Cai MQ. High-performance photovoltaic application of the 2D all-inorganic Ruddlesden-Popper perovskite heterostructure Cs 2PbI 2Cl 2/MAPbI 3. Phys Chem Chem Phys 2021; 23:23703-23710. [PMID: 34642715 DOI: 10.1039/d1cp03375a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The three-dimensional (3D) organic-inorganic halide perovskite MAPbI3 has excellent light-harvesting properties but is unstable. However, the newly synthesized two-dimensional (2D) all-inorganic Ruddlesden-Popper (RP) perovskite Cs2PbI2Cl2 has superior stability but adverse photoelectric properties. Therefore, constructing a 2D Cs2PbI2Cl2/3D MAPbI3 heterostructure is expected to combine the superstability of the 2D material and the high efficiency of the 3D one. The photoelectric properties and charge transfer of 2D Cs2PbI2Cl2/3D MAPbI3 heterostructures are investigated using density functional theory, where MAPbI3 has two kinds of contacting interfaces, i.e., MAI and PbI interfaces. The band gaps of 2D/MAI and 2D/PbI heterostructures are 1.52 eV and 1.40 eV, smaller than those of the free-standing materials (2D ∼ 2.50 eV, MAI ∼ 1.77 eV, and PbI ∼ 1.73 eV), which can broaden the light absorption spectrum. Moreover, the 2D/3D heterostructures are typical type-II heterostructures, which is beneficial to facilitate the separation of carriers for increasing the photoelectric conversion. Interestingly, due to the work function difference (2D ∼ 4.97 eV, MAI ∼ 3.57 eV, and PbI ∼ 5.49 eV), the charge transfer directions of the 2D/MAI and 2D/PbI heterostructures are completely opposite, which shows that interface engineering to impose a consistent interface termination is needed to obtain good performance for solar cells. These results demonstrate that constructing 2D Cs2PbI2Cl2 and 3D MAPbI3 heterostructures by interfacial engineering is a potential strategy to improve the performance of perovskite solar cells (PSCs).
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Affiliation(s)
- Ling-Yu Pan
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China.
| | - Yu-Feng Ding
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China.
| | - Huang-Qing Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China.
| | - Meng-Qiu Cai
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China.
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10
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Theoretical study on the tunable electronic band structure of Cs2PbI2Cl2/CsPbBr3 halide perovskite heterostructure driven by ferroelectric polarization modulation. J Colloid Interface Sci 2021; 597:233-241. [DOI: 10.1016/j.jcis.2021.03.121] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/28/2021] [Revised: 03/19/2021] [Accepted: 03/21/2021] [Indexed: 10/21/2022]
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11
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Zhu L, Ding YF, Yang WJ, Yin SF, Cai MQ. Effects of doping on photocatalytic water splitting activities of PtS 2/SnS 2 van der Waals heterostructures. Phys Chem Chem Phys 2021; 23:18125-18136. [PMID: 34397065 DOI: 10.1039/d1cp01777b] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Photocatalytic water splitting is a promising technology to solve serious energy and environmental problems. The PtS2 monolayer has been previously predicted to be a water splitting photocatalyst. But the high efficiency of carrier recombination in the monolayer results in poor photocatalytic performance. It is well known that the construction of van der Waals (vdW) heterojunctions can improve the photocatalytic performance of a monolayer. In this investigation, we constructed a PtS2/SnS2 vdW heterojunction and systematically investigated the influence of the doping position and doping ratio on its performance using density functional theory calculations. Interestingly, the band alignment transforms from Type-II to Type-I and from Type-I to Type-II when the S in SnS2 is replaced with Se in the PtS2/SnS2 vdW heterojunction and the S in PtS2 is replaced with Se in the PtS2/SnSe2 vdW heterojunction, respectively. More importantly, from the PtS2/SnS2 to PtSe2/SnSe2 vdW heterojunction, the decomposition of water also changes from semi-decomposed water to fully decomposed water. Furthermore, the results show that the direct Z-scheme photocatalytic mechanism exists in the PtSSe/SnSe2 vdW heterojunction by analysis of the migration paths of photoinduced electrons and holes. And compared with the PtS2/SnS2, the PtSSe/SnSe2 heterostructure exhibits better photocatalytic water splitting activities. These results can provide a direction that doping can improve the photocatalytic water splitting performance of heterojunction photocatalysts.
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Affiliation(s)
- Liang Zhu
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China.
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12
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Li QH, Ding YF, He PB, Zeng R, Wan Q, Cai MQ. Transition of the Type of Band Alignments for All-Inorganic Perovskite van der Waals Heterostructures CsSnBr 3/WS 2(1-x)Se 2x. J Phys Chem Lett 2021; 12:3809-3818. [PMID: 33852315 DOI: 10.1021/acs.jpclett.1c00830] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In general, two-dimensional semiconductor-based van der Waals heterostructures (vdWHs) can be modulated to achieve the transition of band alignments (type-I, type-II, and type-III), which can be applied in different applications. However, it is rare in three-dimensional perovskite-based vdWHs, and it is challenging to achieve the tunable band alignments for a single perovskite-based heterostructure. Here, we systematically investigate the electronic and optical properties of all-inorganic perovskite vdWHs CsSnBr3/WS2(1-x)Se2x based on density functional theory (DFT) calculation. The calculated results show that the transitions of band alignment from type-II to type-I and type-III to type-II are achieved by modulating the doping ratio of the Se atom in the WS2(1-x)Se2x monolayer for SnBr2/WS2(1-x)Se2x and CsBr/WS2(1-x)Se2x heterostructures, respectively, in which the CsBr and SnBr2 represent two different terminated surfaces of CsSnBr3. The change of band alignments can be attributed to the conduction band minimum (CBM) transforming from the W 5d to Sn 5p orbital in SnBr2/WS2(1-x)Se2x vdWHs, and the valence band maximum (VBM) and CBM change from an overlapped state to a separated one in CsBr/WS2(1-x)Se2x vdWHs. This work can provide a theoretical basis for the dynamic modulation of band alignments in perovskite-based vdWHs.
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Affiliation(s)
- Qiao-Hua Li
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yu-Feng Ding
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Peng-Bin He
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Ruosheng Zeng
- MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning, Guangxi 530004, China
| | - Qiang Wan
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Meng-Qiu Cai
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
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13
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Cai W, Wang J, He Y, Liu S, Xiong Q, Liu Z, Zhang Q. Strain-Modulated Photoelectric Responses from a Flexible α-In 2Se 3/3R MoS 2 Heterojunction. NANO-MICRO LETTERS 2021; 13:74. [PMID: 34138284 PMCID: PMC8128968 DOI: 10.1007/s40820-020-00584-1] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2020] [Accepted: 12/08/2020] [Indexed: 06/12/2023]
Abstract
Semiconducting piezoelectric α-In2Se3 and 3R MoS2 have attracted tremendous attention due to their unique electronic properties. Artificial van der Waals (vdWs) heterostructures constructed with α-In2Se3 and 3R MoS2 flakes have shown promising applications in optoelectronics and photocatalysis. Here, we present the first flexible α-In2Se3/3R MoS2 vdWs p-n heterojunction devices for photodetection from the visible to near infrared region. These heterojunction devices exhibit an ultrahigh photoresponsivity of 2.9 × 103 A W-1 and a substantial specific detectivity of 6.2 × 1010 Jones under a compressive strain of - 0.26%. The photocurrent can be increased by 64% under a tensile strain of + 0.35%, due to the heterojunction energy band modulation by piezoelectric polarization charges at the heterojunction interface. This work demonstrates a feasible approach to enhancement of α-In2Se3/3R MoS2 photoelectric response through an appropriate mechanical stimulus.
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Affiliation(s)
- Weifan Cai
- Center for Micro- and Nano-Electronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jingyuan Wang
- Center for Micro- and Nano-Electronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yongmin He
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Sheng Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 639798, Singapore
| | - Qihua Xiong
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Qing Zhang
- Center for Micro- and Nano-Electronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
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14
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Wang BH, Gao B, Zhang JR, Chen L, Junkang G, Shen S, Au CT, Li K, Cai MQ, Yin SF. Thickness-induced band-gap engineering in lead-free double perovskite Cs 2AgBiBr 6 for highly efficient photocatalysis. Phys Chem Chem Phys 2021; 23:12439-12448. [PMID: 34031670 DOI: 10.1039/d0cp03919e] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In recent years, two-dimensional (2D) lead-free double perovskites have been attracting much attention because of their unique performance in photovoltaic solar cells and photocatalysis. Nonetheless, how thickness affects the photoelectric properties of lead-free double perovskite remains unclear. In this work, by means of density functional theory (DFT) with a spin orbit coupling (SOC) effect, we have investigated the electronic and optical properties systemically, including band structures, carrier mobility, optical absorption spectra, exciton-binding energies, band edges alignment and molecule adsorption performance of Cs2AgBiBr6 with different thicknesses. The calculated results revealed the thickness-induced band gap and optical performance for Cs2AgBiBr6. It shows a low band gap and outstanding optical absorption of visible and ultraviolet light. When the thickness is reduced to a monolayer, Cs2AgBiBr6 moves from an indirect band gap to a direct band gap. Moreover, the carrier mobility of Cs2AgBiBr6 is excellent and the exciton-binding energy increases with the decreased thickness. Importantly, an analysis of molecule adsorption and band edge alignment indicates that Cs2AgBiBr6 is prone to H2O adsorption and H2 desorption theoretically, which is conducive to the photocatalytic water splitting for hydrogen generation and other photovatalytic reactions. Our work suggests that Cs2AgBiBr6 is a potential candidate as a solar cell or a photocatalyst, and we provide theoretical explorations into reducing the layers of lead-free double perovskite materials to 2D atomic thickness for a better photocatalytic application, which can serve as guidelines for the design of excellent photocatalysts.
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Affiliation(s)
- Bing-Hao Wang
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China.
| | - Bin Gao
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China.
| | - Jin-Rong Zhang
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China.
| | - Lang Chen
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China.
| | - Guo Junkang
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China.
| | - Sheng Shen
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China.
| | - Chak-Tong Au
- College of Chemistry and Chemical Engineering, Hunan Institute of Engineering, Xiangtan 411104, Hunan, People's Republic of China
| | - Kenli Li
- School of Computer and Communication, Hunan University, Changsha 410082, People's Republic of China
| | - Meng-Qiu Cai
- School of Physics and Electronics Science, Hunan University, Changsha 410082, People's Republic of China.
| | - Shuang-Feng Yin
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China.
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15
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Wang G, Li Z, Wu W, Guo H, Chen C, Yuan H, Yang SA. A two-dimensional h-BN/C 2N heterostructure as a promising metal-free photocatalyst for overall water-splitting. Phys Chem Chem Phys 2020; 22:24446-24454. [PMID: 33084701 DOI: 10.1039/d0cp03925j] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
The construction of a heterostructure (HS) is an effective strategy to modulate the desired properties of two-dimensional (2D) materials and to extend their applications. In this paper, based on the density functional theory, we predict a metal-free type-II HS formed by h-BN and C2N single layers. The h-BN/C2N HS possesses a smaller bandgap than individual h-BN and C2N single layers, and it exhibits excellent visible light absorption. Importantly, its band edge positions satisfy the requirements for spontaneous water-splitting. With the assistance of the built-in electric field across the HS and the band offset, the photoinduced carriers can be readily spatially separated. Free energy calculations indicate the high catalytic activity for water oxidation and reduction reactions. The performance can be further enhanced by strain, which modulates the bandgap and the band edge positions of the HS. The band alignment may undergo a transition from type-I to type-II under strain, offering an effective switch for the reaction. The appropriate bandgap, suitable band edge positions, and effective carrier separation make the h-BN/C2N HS a promising candidate for use as a photocatalyst in water-splitting.
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Affiliation(s)
- Guangzhao Wang
- Key Laboratory of Micro Nano Optoelectronic Devices and Intelligent Perception Systems, Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing, School of Electronic Information Engineering, Yangtze Normal University, Chongqing 408100, China.
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