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Włodarski M, Nowak MP, Putkonen M, Nyga P, Norek M. Surface Modification of ZnO Nanotubes by Ag and Au Coatings of Variable Thickness: Systematic Analysis of the Factors Leading to UV Light Emission Enhancement. ACS OMEGA 2024; 9:1670-1682. [PMID: 38222608 PMCID: PMC10785295 DOI: 10.1021/acsomega.3c08253] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2023] [Revised: 12/07/2023] [Accepted: 12/11/2023] [Indexed: 01/16/2024]
Abstract
Surface modification by plasmonic metals is one of the most promising ways to increase the band-to-band excitonic recombination in zinc oxide (ZnO) nanostructures. However, the metal-induced modulation of the UV light emission depends strongly on the production method, making it difficult to recognize the mechanism responsible for charge/energy transfer between the semiconductor and a metal. Therefore, in this study, the ZnO/Ag and Au hybrids were produced by the same, fully controlled experimental approach. ZnO nanotubes (NTs), fabricated by a template-assisted ALD synthesis, were coated by metals of variable mass thickness (1-6.5 nm thick) using the electron beam PVD technique. The deposited Ag and Au metals grew in the form of island films made of metallic nanoparticles (NPs). The size of the NPs and their size distribution decreased, while the spacing between the NPs increased as the mass of the deposited Ag and Au metals decreased. Systematic optical analysis allowed us to unravel a specific role of surface defects in ZnO NTs in the processes occurring at the ZnO/metal interface. The enhancement of the UV emission was observed only in the ZnO/Ag system. The phenomena were tentatively ascribed to the coupling between the defect-related (DL) excitonic recombination in ZnO and the localized surface plasmon resonance (LSPR) at the Ag NPs. However, the enhancement of UV light was observed only for a narrow range of Ag NP dimensions, indicating the great importance of the size and internanoparticle spacing in the plasmonic coupling. Moreover, the enhancement factors were much stronger in ZnO NTs characterized by robust DL-related emission before metal deposition. In contrast to Ag, Au coatings caused quenching of the UV emission from ZnO NTs, which was attributed to the uncoupling between the DL and LSP energies in this system and a possible formation of the ohmic contact between the Au metal and the ZnO.
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Affiliation(s)
- Maksymilian Włodarski
- Institute
of Optoelectronics, Military University of Technology, 2 Gen. Sylwestra Kaliskiego Str., 00-908 Warsaw, Poland
| | - Michał P. Nowak
- Institute
of Optoelectronics, Military University of Technology, 2 Gen. Sylwestra Kaliskiego Str., 00-908 Warsaw, Poland
| | - Matti Putkonen
- Department
of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland
| | - Piotr Nyga
- Institute
of Optoelectronics, Military University of Technology, 2 Gen. Sylwestra Kaliskiego Str., 00-908 Warsaw, Poland
| | - Małgorzata Norek
- Institute
of Materials Science and Engineering, Faculty of Advanced Technologies
and Chemistry, Military University of Technology, 2 Gen. Sylwestra Kaliskiego Str., 00-908 Warsaw, Poland
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2
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Li J, Li B, Meng M, Sun L, Jiang M. Interface engineering enhanced near-infrared electroluminescence in an n-ZnO microwire/p-GaAs heterojunction. OPTICS EXPRESS 2022; 30:24773-24787. [PMID: 36237023 DOI: 10.1364/oe.459837] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2022] [Accepted: 06/15/2022] [Indexed: 06/16/2023]
Abstract
Interface engineering in the fabrication of low-dimensional optoelectronic devices has been highlighted in recent decades to enhance device characteristics such as reducing leakage current, optimizing charge transport, and modulating the energy-band structure. In this paper, we report a dielectric interface approach to realize one-dimensional (1D) wire near-infrared light-emitting devices with high brightness and enhanced emission efficiency. The light-emitting diode is composed of a zinc oxide microwire covered by a silver nanolayer (Ag@ZnO MW), magnesium oxide (MgO) buffer layer, and p-type gallium arsenide (GaAs) substrate. In the device structure, the insertion of a MgO dielectric layer in the n-ZnO MW/p-GaAs heterojunction can be used to modulate the device features, such as changing the charge transport properties, reducing the leakage current and engineering the band alignment. Furthermore, the cladding of the Ag nanolayer on the ZnO MW can optimize the junction interface quality, thus reducing the turn-on voltage and increasing the current injection and electroluminescence (EL) efficiency. The combination of MgO buffer layer and Ag nanolayer cladding can be utilized to achieve modulating the carrier recombination path, interfacial engineering of heterojunction with optimized band alignment and electronic structure in these carefully designed emission devices. Besides, the enhanced near-infrared EL and improved physical contact were also obtained. The study of current transport modulation and energy-band engineering proposes an original and efficient route for improving the device performances of 1D wire-type heterojunction light sources.
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Sun Y, Jiang M, Li B, Xie X, Shan C, Shen D. Electron-hole plasma Fabry-Perot lasing in a Ga-incorporated ZnO microbelt via Ag nanoparticle deposition. OPTICS EXPRESS 2022; 30:740-753. [PMID: 35209258 DOI: 10.1364/oe.440628] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/17/2021] [Accepted: 11/19/2021] [Indexed: 06/14/2023]
Abstract
In this work, individual ZnO via Ga-doped (ZnO:Ga) microbelts with excellent crystallinity and smooth facets can enable the realization of lateral microresonator Fabry-Perot (F-P) microlasers, and the F-P lasing action originates from excitonic state. Interestingly, introducing Ag nanoparticles (AgNPs) deposited on the microbelt can increase F-P lasing characteristics containing a lower threshold and enhanced lasing output. Especially for the large size AgNPs (the diameter d is approximately 200 nm), the lasing features also exhibit a significant redshift of each lasing peak and an observable broadening of the spectral line width with an increase of the excitation fluence. And the remarkable lasing characteristics are belonging to the electron-hole plasma (EHP) luminescence. The behavior and dynamics of the stimulated radiation in an AgNPs@ZnO:Ga microbelt are studied, suggesting the Mott-transition from the excitonic state to EHP state that is responsible for the F-P lasing. These features can be attributed to the working mechanism that the hot electrons created by the large size AgNPs through nonradiative decay can fill the conduction band of nearby ZnO:Ga, leading to a downward shift of the conduction band edge. This novel filling influence can facilitate bandgap renormalization and result in EHP emission. The results provide a comprehensive understanding of the transition between excitonic and EHP states in the stimulated emission process. More importantly, it also can provide new scheme to developing high efficiency and ultra-low threshold microlasing diodes.
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Jiang M, Liu X, Liu M, Zhu R, Li B, Wan P, Shi D, Kan C. Interfacial modulation and plasmonic effect mediated high-brightness green light sources in a single Ga-doped ZnO microwire based heterojunction. CrystEngComm 2022. [DOI: 10.1039/d2ce00917j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Heterostructure manufacturing has been extensively studied as indispensable footstones in the progressive semiconductor optoelectronic devices due to their constituent materials, interfacial states and electronic transport capabilities, thus enabling competitive candidates...
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Liu Y, Dai R, Jiang M, Tang K, Wan P, Kan C. Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires. NANOSCALE ADVANCES 2021; 3:5605-5617. [PMID: 36133259 PMCID: PMC9418426 DOI: 10.1039/d1na00428j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/08/2021] [Accepted: 08/07/2021] [Indexed: 06/16/2023]
Abstract
With the disadvantages of indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare low-dimensional high-performance optoelectronic devices. In this work, an individual ZnO microwire via Ga-incorproration (ZnO:Ga MW) was employed to prepare a light-emitting/detecting bifunctional heterojunction structure, combined with p-type Si crystal wafer as a hole transporting layer. In a forward-bias regime, red luminescence peaking at around 680 nm was captured. While, the fabricated heterojunction device also exhibited an obvious photoresponse in the ultraviolet wavelengths. Interestingly, the introduction of Ag nanowires (AgNWs) are utilized to increase light output with amplitude 4 times higher than with that of naked wire-based LEDs. Similarly, the performance parameters of the fabricated n-AgNWs@ZnO:Ga MW/p-Si heterojunction photodetector are significantly enhanced, containing a responsivity of 5.52 A W-1, detectivity of 2.34 × 1012 Jones, external quantum efficiency of 1.9 × 103% illuminated under 370 nm at -1 V. We compare this work with previous reported photodetectors based on various ZnO/Si-based materials and structures, some performance parameters are not superior, but our constructed n-AgNWs@ZnO:Ga MW/p-Si heterojunction photodetector has comparable overall characteristics, and our findings stand out especially for providing an inexpensive and suitable pathway for developing low-cost, miniaturized and integrated ultraviolet photodetectors. The demonstration of AgNWs enhanced low-dimensional light-emitting/detecting bifunctional photodiodes can offer a promising scheme to construct high-performance Si-based optoelectronic devices.
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Affiliation(s)
- Yang Liu
- College of Science, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics No. 29 Jiangjun Road Nanjing 211106 P. R. China
| | - Ruiming Dai
- College of Science, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics No. 29 Jiangjun Road Nanjing 211106 P. R. China
| | - Mingming Jiang
- College of Science, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics No. 29 Jiangjun Road Nanjing 211106 P. R. China
| | - Kai Tang
- College of Science, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics No. 29 Jiangjun Road Nanjing 211106 P. R. China
| | - Peng Wan
- College of Science, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics No. 29 Jiangjun Road Nanjing 211106 P. R. China
| | - Caixia Kan
- College of Science, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics No. 29 Jiangjun Road Nanjing 211106 P. R. China
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Ma K, Li B, Zhou X, Jiang M, Liu Y, Kan C. Plasmon-enabled spectrally narrow ultraviolet luminescence device using Pt nanoparticles covered one microwire-based heterojunction. OPTICS EXPRESS 2021; 29:21783-21794. [PMID: 34265958 DOI: 10.1364/oe.431124] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2021] [Accepted: 06/15/2021] [Indexed: 06/13/2023]
Abstract
Owing to great luminescent monochromaticity, high stability, and independent of automatic color filter, low dimensional ultraviolet light-emitting diodes (LEDs) via the hyperpure narrow band have attracted considerable interest for fabricating miniatured display equipments, solid state lighting sources, and other ultraviolet photoelectrical devices. In this study, a near-ultraviolet LED composed of one Ga-doped ZnO microwire (ZnO:Ga MW) and p-GaN layer was fabricated. The diode can exhibit bright electroluminescence (EL) peaking at 400.0 nm, with a line width of approximately 35 nm. Interestingly, by introducing platinum nanoparticles (PtNPs), we achieved an ultraviolet plasmonic response; an improved EL, including significantly enhanced light output; an observed blueshift of main EL peaks of 377.0 nm; and a reduction of line width narrowing to 10 nm. Working as a powerful scalpel, the decoration of PtNPs can be employed to tailor the spectral line profiles of the ultraviolet EL performances. Also, a rational physical model was built up, which could help us study the carrier transportation, recombination of electrons and holes, and dynamic procedure of luminescence. This method offers a simple and feasible way, without complicated fabricating technology such as an added insulating layer or core shell structure, to realize hyperpure ultraviolet LED. Therefore, the proposed engineering of energy band alignment by introducing PtNPs can be employed to build up high performance, high spectral purity luminescent devices in the short wavelengths.
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Ma K, Zhou X, Kan C, Xu J, Jiang M. Pt nanoparticles utilized as efficient ultraviolet plasmons for enhancing whispering gallery mode lasing of a ZnO microwire via Ga-incorporation. Phys Chem Chem Phys 2021; 23:6438-6447. [PMID: 33711087 DOI: 10.1039/d1cp00131k] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
Introducing nanostructured metals with ultraviolet plasmonic characters has attracted much attention for fabricating high performance optoelectronic devices in the shorter wavelength spectrum. In this work, platinum nanoparticles (PtNPs) with controlled plasmonic responses in ultraviolet wavelengths were successfully synthesized. To demonstrate the promising availability, PtNPs with desired sizes were deposited on a hexagonal ZnO microwire via Ga-doping (PtNPs@ZnO:Ga MW). Under ultraviolet illumination, typical near-band-edge emission of ZnO:Ga MW was considerably enhanced; meanwhile, the photocurrent is much larger than that of the bare MW. Thereby, the enhanced phenomena of a ZnO:Ga MW is related to localized surface plasmon resonances of the decorated PtNPs. A single MW with a hexagonal cross-section can be a potential platform to construct a whispering gallery mode (WGM) cavity due to its total inner wall reflection. Given this, the influence of PtNPs via ultraviolet plasmons on lasing features of the ZnO:Ga MW was tested. The lasing characteristics are significantly enhanced, including lasing output enhancement, a clear reduction of the threshold and the improvement of the quality factor. To exploit the working principle, PtNPs serving as powerful ultraviolet plasmons can couple with ZnO:Ga excitons, accelerating radiative recombination. Since fabricating stable, typical nanostructured metals with ultraviolet plasmons remains a challenging issue, the results illustrated in the work may offer a low-cost and efficient scheme for achieving plasmon-enhanced wide-bandgap semiconductor based ultraviolet optoelectronic devices with excellent performances.
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Affiliation(s)
- Kunjie Ma
- College of Science, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China.
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Tang K, Jiang M, Wan P, Kan C. Continuous-wave operation of an electrically pumped single microribbon based Fabry-Perot microlaser. OPTICS EXPRESS 2021; 29:983-995. [PMID: 33726323 DOI: 10.1364/oe.412475] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2020] [Accepted: 12/12/2020] [Indexed: 06/12/2023]
Abstract
Fabry-Perot (FP) mode microlasers have been popularized and applied widely in on-chip coherent light sources because of the unique advantages of directional output emission. In this work, a heterojunction light-emitting diode (LED) made of a Ga-doped ZnO (ZnO:Ga) microribbon and p-GaAs template is fabricated. And its electroluminescence characteristics of strong coupling of exciton-photon and polariton lasing, in the blue-violet spectrum, were demonstrated under continuous-wave operation of an electrical injection. In the device structure, a single microribbon with a rectangular-shaped cross section can achieve the FP-mode lasing action by the optical oscillation between the two lateral sides of the microcrystals in the ultraviolet spectrum. As the reverse-current is below the threshold value, the device can have radiative polaritonic lighting directly from bilateral sides of the microribbon, yielding strong coupling between excitons and FP-mode microresonator. And the exciton-polariton coupling strengths characterized by a Rabi splitting energy were extracted to be 500 meV. Further, when the input current increased more than a certain value, strong laser illuminating developed as two sharp peaks at the lower energy shoulder of the spontaneous emission peak, and these oscillating modes can dominate the waveguide EL spectra. The experimental results can provide us with further unambiguous evidence that the lasing is originated from the polariton resonances for the microribbon with strong exciton-polariton coupling. Since single microribbon based optical FP-mode microresonators do not require additional feedback mirrors, their compact size and resulting low thresholds make them a powerful candidate to construct on-chip coherent light sources for future integrated nanophotonic and optoelectronic circuitry.
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Miao C, Xu H, Jiang M, Liu Y, Wan P, Kan C. High performance lasing in a single ZnO microwire using Rh nanocubes. OPTICS EXPRESS 2020; 28:20920-20929. [PMID: 32680142 DOI: 10.1364/oe.395746] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2020] [Accepted: 06/22/2020] [Indexed: 06/11/2023]
Abstract
High-purity and size-controlled Rh nanocubes (RhNCs) with plasmonic responses in the ultraviolet spectrum range were synthesized; the ultraviolet plasmonic features of RhNCs have potential applications in wide bandgap semiconductors and optoelectronic devices because of their optical tunability and stability, as well as the compatibility with neighboring semiconductor micro/nanostructures. In this work, by incorporating RhNCs, the near-band-edge emission of a single ZnO microwire is considerably enhanced. When optically pumped by a fs pulsed laser at room temperature, RhNCs-plasmon enhanced high-performance whispering gallery mode (WGM) lasing characteristics, including lower lasing threshold, higher Q-factor, and lasing output enhancement, can be achieved from a single ZnO microwire covered by RhNCs. To further probe the modulation effect of RhNCs plasmons on the lasing characteristics of the ZnO microwires, time-resolved photoluminescence (TRPL) and electromagnetic simulation analyses were also performed. Based on our results, it can be concluded that size-controlled RhNCs with ultraviolet energy-tunable plasmons have the potential for use in optoelectronic devices requiring stable and high-performance in the short wavelength spectrum band owing to their unique ultraviolet plasmonic features.
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Miao C, Xu H, Jiang M, Ji J, Kan C. Employing rhodium tripod stars for ultraviolet plasmon enhanced Fabry–Perot mode lasing. CrystEngComm 2020. [DOI: 10.1039/d0ce00890g] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
Abstract
Rhodium tripod stars serving as ultraviolet plasmons can provide a highly competitive platform to achieve high-performance Fabry–Perot lasing of quadrilateral ZnO microwires.
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Affiliation(s)
- Changzong Miao
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
- Key Laboratory for Intelligent Nano Materials and Devices
| | - Haiying Xu
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
- Department of Mathematics and Physics
| | - Mingming Jiang
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
- Key Laboratory for Intelligent Nano Materials and Devices
| | - Jiaolong Ji
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
| | - Caixia Kan
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
- Key Laboratory for Intelligent Nano Materials and Devices
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Wan P, Jiang M, Tang K, Zhou X, Kan C. Hot electron injection induced electron–hole plasma lasing in a single microwire covered by large size Ag nanoparticles. CrystEngComm 2020. [DOI: 10.1039/d0ce00640h] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In addition to the plasmon-mediated resonant coupling mechanism, plasmon-induced hot electron transfer can provide an alternative approach to construct high-performance optoelectronic devices for various applications.
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Affiliation(s)
- Peng Wan
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 210016
- China
| | - Mingming Jiang
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 210016
- China
- Key Laboratory for Intelligent Nano Materials and Devices
| | - Kai Tang
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 210016
- China
| | - Xiangbo Zhou
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 210016
- China
| | - Caixia Kan
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 210016
- China
- Key Laboratory for Intelligent Nano Materials and Devices
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Miao C, Jiang M, Xu H, Ji J, Kan C. Vertically-aligned ZnO microrod for high-brightness light source. CrystEngComm 2020. [DOI: 10.1039/d0ce00933d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
ZnO-microrod array with well-aligned orientation prepared on p-GaN template can be utilized to construct high-performance near-ultraviolet emitters due to desired high optical quality and well-defined geometries.
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Affiliation(s)
- Changzong Miao
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
- Key Laboratory for Intelligent Nano Materials and Devices
| | - Mingming Jiang
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
- Key Laboratory for Intelligent Nano Materials and Devices
| | - Haiying Xu
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
- Department of Mathematics and Physics
| | - Jiaolong Ji
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
| | - Caixia Kan
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
- Key Laboratory for Intelligent Nano Materials and Devices
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Liu Y, Jiang M, Tang K, Ma K, Wu Y, Ji J, Kan C. Plasmon-enhanced high-performance Si-based light sources by incorporating alloyed Au and Ag nanorods. CrystEngComm 2020. [DOI: 10.1039/d0ce00823k] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
Benefitting from alloyed Au and Ag nanorods with desired plasmons, single ZnO:Ga microwire assembled on a p-Si template, can provide a promising candidate for the realization of high-efficiency Si-based light sources
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Affiliation(s)
- Yang Liu
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
| | - Mingming Jiang
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
- Key Laboratory for Intelligent Nano Materials and Devices
| | - Kai Tang
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
| | - Kunjie Ma
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
| | - Yuting Wu
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
| | - Jiaolong Ji
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
| | - Caixia Kan
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
- Key Laboratory for Intelligent Nano Materials and Devices
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