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Vishwanath SK, Febriansyah B, Ng SE, Das T, Acharya J, John RA, Sharma D, Dananjaya PA, Jagadeeswararao M, Tiwari N, Kulkarni MRC, Lew WS, Chakraborty S, Basu A, Mathews N. High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing. MATERIALS HORIZONS 2024; 11:2643-2656. [PMID: 38516931 DOI: 10.1039/d3mh02055j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
Despite impressive demonstrations of memristive behavior with halide perovskites, no clear pathway for material and device design exists for their applications in neuromorphic computing. Present approaches are limited to single element structures, fall behind in terms of switching reliability and scalability, and fail to map out the analog programming window of such devices. Here, we systematically design and evaluate robust pyridinium-templated one-dimensional halide perovskites as crossbar memristive materials for artificial neural networks. We compare two halide perovskite 1D inorganic lattices, namely (propyl)pyridinium and (benzyl)pyridinium lead iodide. The absence of conjugated, electron-rich substituents in PrPyr+ prevents edge-to-face type π-stacking, leading to enhanced electronic isolation of the 1D iodoplumbate chains in (PrPyr)[PbI3], and hence, superior resistive switching performance compared to (BnzPyr)[PbI3]. We report outstanding resistive switching behaviours in (PrPyr)[PbI3] on the largest flexible crossbar implementation (16 × 16) to date - on/off ratio (>105), long term retention (105 s) and high endurance (2000 cycles). Finally, we put forth a universal approach to comprehensively map the analog programming window of halide perovskite memristive devices - a critical prerequisite for weighted synaptic connections in artificial neural networks. This consequently facilitates the demonstration of accurate handwritten digit recognition from the MNIST database based on spike-timing-dependent plasticity of halide perovskite memristive synapses.
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Affiliation(s)
- Sujaya Kumar Vishwanath
- School of Materials Science & Engineering, Nanyang Technological University, 639798, Singapore.
| | - Benny Febriansyah
- Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, 637553, Singapore
| | - Si En Ng
- School of Materials Science & Engineering, Nanyang Technological University, 639798, Singapore.
| | - Tisita Das
- Materials Theory for Energy Scavenging (MATES) Lab, Harish-Chandra Research Institute(HRI) Allahabad, HBNI, Chhatnag Road, Jhunsi, Prayagraj (Allahabad), 211019, India.
| | - Jyotibdha Acharya
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Rohit Abraham John
- School of Materials Science & Engineering, Nanyang Technological University, 639798, Singapore.
| | - Divyam Sharma
- School of Materials Science & Engineering, Nanyang Technological University, 639798, Singapore.
| | - Putu Andhita Dananjaya
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore
| | | | - Naveen Tiwari
- School of Materials Science & Engineering, Nanyang Technological University, 639798, Singapore.
| | | | - Wen Siang Lew
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore
| | - Sudip Chakraborty
- Materials Theory for Energy Scavenging (MATES) Lab, Harish-Chandra Research Institute(HRI) Allahabad, HBNI, Chhatnag Road, Jhunsi, Prayagraj (Allahabad), 211019, India.
| | - Arindam Basu
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong
| | - Nripan Mathews
- School of Materials Science & Engineering, Nanyang Technological University, 639798, Singapore.
- Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, 637553, Singapore
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George T, Vadivel Murugan A. Revealing the effect of substitutional cation doping in the A-site of nanoscale APbI 3 perovskite layers for enhanced retention and endurance in optoelectronic resistive switching for non-volatile bipolar memory devices. NANOSCALE 2023; 15:6960-6975. [PMID: 37000576 DOI: 10.1039/d2nr07007c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The effect of substitutional cation doping in the A-site of the nanoscale APbI3 perovskite layer has been systematically investigated to achieve improvements in the charge-carrier dynamics and endurance of non-volatile bipolar (NVB) memory devices. We successfully adopted an energy-efficient, ultra-fast microwave-assisted solvothermal (MW-ST) synthesis route to prepare a sequence of APbI3 (A = MA+, FA+, MAFA+, CsMA+ and CsMAFA+) perovskite powders with morphological transitions from cube-like polyhedrons to mixed polyhedrons and rods within 10 minutes at 120 °C without requiring any inert-gas atmosphere under high-humid ambient conditions. As-prepared APbI3 powders were dissolved in DMSO:DMF, followed by the fabrication of a thin film via spin-coating. Upon annealing at 120 °C, the nanoscale self-assembled thin-film layer was formed. We observed that devices with the inorganic Cs+ cation with organic cations, (CsMAPI and CsMAFAPI) device showed improved endurance (3500 and 5000 cycles, respectively) and outstanding retention (60 000 s) owing to effective charge-carrier dynamics, compared to organic cation-based MAPI, FAPI and MAFAPI (1800, 1200 and 1300 cycles, respectively). Significantly, various cation-doped APbI3-powders obtained via the MW-ST method remained to be stable for up to 5-months under high-humid conditions. Thus, enhanced optoelectronic-memory performance studies could provide an opportunity for next-generation nanoscale ORSNVB-memory devices for artificial intelligence (AI) and Internet of Things (IoT) applications.
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Affiliation(s)
- Twinkle George
- Advanced Functional Nanomaterials Research Laboratory, Centre for Nanoscience and Technology, Madanjeet School of Green Energy Technologies, Pondicherry University (A Central University), Dr. R. Vankataraman Nagar, Kalapet, Puducherry-605014, India.
| | - Arumugam Vadivel Murugan
- Advanced Functional Nanomaterials Research Laboratory, Centre for Nanoscience and Technology, Madanjeet School of Green Energy Technologies, Pondicherry University (A Central University), Dr. R. Vankataraman Nagar, Kalapet, Puducherry-605014, India.
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Yang J, Lee J, Jung Y, Kim S, Kim J, Kim S, Kim J, Seo S, Park D, Lee J, Walsh A, Park J, Park N. Mixed-Dimensional Formamidinium Bismuth Iodides Featuring In-Situ Formed Type-I Band Structure for Convolution Neural Networks. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200168. [PMID: 35307991 PMCID: PMC9108665 DOI: 10.1002/advs.202200168] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/18/2022] [Indexed: 06/14/2023]
Abstract
For valence change memory (VCM)-type synapses, a large number of vacancies help to achieve very linearly changed dynamic range, and also, the low activation energy of vacancies enables low-voltage operation. However, a large number of vacancies increases the current of artificial synapses by acting like dopants, which aggravates low-energy operation and device scalability. Here, mixed-dimensional formamidinium bismuth iodides featuring in-situ formed type-I band structure are reported for the VCM-type synapse. As compared to the pure 2D and 0D phases, the mixed phase increases defect density, which induces a better dynamic range and higher linearity. In addition, the mixed phase decreases conductivity for non-paths despite a large number of defects providing lots of conducting paths. Thus, the mixed phase-based memristor devices exhibit excellent potentiation/depression characteristics with asymmetricity of 3.15, 500 conductance states, a dynamic range of 15, pico ampere-scale current level, and energy consumption per spike of 61.08 aJ. A convolutional neural network (CNN) simulation with the Canadian Institute for Advanced Research-10 (CIFAR-10) dataset is also performed, confirming a maximum recognition rate of approximately 87%. This study is expected to lay the groundwork for future research on organic bismuth halide-based memristor synapses usable for a neuromorphic computing system.
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Affiliation(s)
- June‐Mo Yang
- School of Chemical EngineeringEnergy Frontier LaboratorySungkyunkwan UniversitySuwon16419Korea
| | - Ju‐Hee Lee
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Young‐Kwang Jung
- Department of Materials Science and EngineeringYonsei UniversitySeoul03722Korea
| | - So‐Yeon Kim
- School of Chemical EngineeringEnergy Frontier LaboratorySungkyunkwan UniversitySuwon16419Korea
| | - Jeong‐Hoon Kim
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Seul‐Gi Kim
- School of Chemical EngineeringEnergy Frontier LaboratorySungkyunkwan UniversitySuwon16419Korea
| | - Jeong‐Hyeon Kim
- School of Chemical EngineeringEnergy Frontier LaboratorySungkyunkwan UniversitySuwon16419Korea
| | - Seunghwan Seo
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Dong‐Am Park
- School of Chemical EngineeringEnergy Frontier LaboratorySungkyunkwan UniversitySuwon16419Korea
| | - Jin‐Wook Lee
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon16419Korea
| | - Aron Walsh
- Department of Materials Science and EngineeringYonsei UniversitySeoul03722Korea
- Department of MaterialsImperial College LondonLondonSW7 2AZUK
| | - Jin‐Hong Park
- Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Korea
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon16419Korea
| | - Nam‐Gyu Park
- School of Chemical EngineeringEnergy Frontier LaboratorySungkyunkwan UniversitySuwon16419Korea
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Liu Q, Gao S, Xu L, Yue W, Zhang C, Kan H, Li Y, Shen G. Nanostructured perovskites for nonvolatile memory devices. Chem Soc Rev 2022; 51:3341-3379. [PMID: 35293907 DOI: 10.1039/d1cs00886b] [Citation(s) in RCA: 30] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Perovskite materials have driven tremendous advances in constructing electronic devices owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties, flexible dimensionality engineering, and so on. Particularly, emerging nonvolatile memory devices (eNVMs) based on perovskites give birth to numerous traditional paradigm terminators in the fields of storage and computation. Despite significant exploration efforts being devoted to perovskite-based high-density storage and neuromorphic electronic devices, research studies on materials' dimensionality that has dominant effects on perovskite electronics' performances are paid little attention; therefore, a review from the point of view of structural morphologies of perovskites is essential for constructing perovskite-based devices. Here, recent advances of perovskite-based eNVMs (memristors and field-effect-transistors) are reviewed in terms of the dimensionality of perovskite materials and their potentialities in storage or neuromorphic computing. The corresponding material preparation methods, device structures, working mechanisms, and unique features are showcased and evaluated in detail. Furthermore, a broad spectrum of advanced technologies (e.g., hardware-based neural networks, in-sensor computing, logic operation, physical unclonable functions, and true random number generator), which are successfully achieved for perovskite-based electronics, are investigated. It is obvious that this review will provide benchmarks for designing high-quality perovskite-based electronics for application in storage, neuromorphic computing, artificial intelligence, information security, etc.
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Affiliation(s)
- Qi Liu
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Song Gao
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Lei Xu
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Wenjing Yue
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Chunwei Zhang
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Hao Kan
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Yang Li
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China. .,State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors & Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100083, China.
| | - Guozhen Shen
- State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors & Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100083, China.
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Yang JM, Jung YK, Lee JH, Kim YC, Kim SY, Seo S, Park DA, Kim JH, Jeong SY, Han IT, Park JH, Walsh A, Park NG. Asymmetric carrier transport in flexible interface-type memristor enables artificial synapses with sub-femtojoule energy consumption. NANOSCALE HORIZONS 2021; 6:987-997. [PMID: 34668915 DOI: 10.1039/d1nh00452b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Flexible and transparent artificial synapses with extremely low energy consumption have potential for use in brain-like neuromorphic electronics. However, most of the transparent materials for flexible memristive artificial synapses were reported to show picojoule-scale high energy consumption with kiloohm-scale low resistance, which limits the scalability for parallel operation. Here, we report on a flexible memristive artificial synapse based on Cs3Cu2I5 with energy consumption as low as 10.48 aJ (= 10.48 × 10-18 J) μm-2 and resistance as high as 243 MΩ for writing pulses. Interface-type resistive switching at the Schottky junction between p-type Cu3Cs2I5 and Au is verified, where migration of iodide vacancies and asymmetric carrier transport owing to the effective hole mass is three times heavier than effective electron mass are found to play critical roles in controlling the conductance, leading to high resistance. There was little difference in synaptic weight updates with high linearity and 250 states before and after bending the flexible device. Moreover, the MNIST-based recognition rate of over 90% is maintained upon bending, indicative of a promising candidate for highly efficient flexible artificial synapses.
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Affiliation(s)
- June-Mo Yang
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Young-Kwang Jung
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea.
| | - Ju-Hee Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Yong Churl Kim
- Samsung Advanced Institute of Technology (SAIT), Suwon 443-803, Korea
| | - So-Yeon Kim
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Seunghwan Seo
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Dong-Am Park
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Jeong-Hyeon Kim
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Se-Yong Jeong
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - In-Taek Han
- Samsung Advanced Institute of Technology (SAIT), Suwon 443-803, Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Aron Walsh
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea.
- Department of Materials, Imperial College London, London SW7 2AZ, UK
| | - Nam-Gyu Park
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
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Lee S, Kim WB, Lee JM, Kim HJ, Choi JH, Jung HS. Oxide Passivation of Halide Perovskite Resistive Memory Device: A Strategy for Overcoming Endurance Problem. ACS APPLIED MATERIALS & INTERFACES 2021; 13:44577-44584. [PMID: 34495629 DOI: 10.1021/acsami.1c13210] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Owing to a low operation voltage, high on/off ratio, and tunable band gap, halide perovskites (HPs) are being conceived as an alternative to oxide or chalcogenide materials in resistive-switching (RS) memory devices. However, the HP-based RS memory devices face problems such as short endurance, low retention, and device stability. Herein, the oxide-passivated HP devices were fabricated by hybridizing the oxide sol-gel and halide adduct methods. The silicon oxide (SiO2)-passivation enhanced the device properties with an endurance of 6000 cycles and retention of 1.8 × 104 s. The study of activation energy using ionic conductivity and time-of-flight secondary-ion mass spectroscopy demonstrated that the migration path of the Ag ions is well-controlled by the SiO2 passivation layer. Various oxides were used as passivation materials. Especially, the zirconium oxide-passivated devices exhibit excellent properties with an endurance of 57 000 cycles and retention of 7.8 × 104 s. The high cohesive energy of oxides effectively increased the formation voltage by retarding the Ag-ion migration, leading to the improved endurance properties of the devices. This paper proposes a strategy for significantly improving the low endurance property of HP-based RS memory devices using the oxide passivation technology.
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Affiliation(s)
- SangMyeong Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Won Bin Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jae Myeong Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hee Jung Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jin Hyuk Choi
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyun Suk Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
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Kim SY, Yang JM, Lee SH, Park NG. A layered (n-C 4H 9NH 3) 2CsAgBiBr 7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio. NANOSCALE 2021; 13:12475-12483. [PMID: 34477612 DOI: 10.1039/d1nr03245c] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Lead-based halide perovskites have been proposed as potential candidates for resistive switching memristors due to the high ON/OFF ratio along with millivolt-level low operational voltage. However, lead-free perovskites with 3-dimensional structures, such as Cs2AgBiBr6, were reported to suffer from low ON/OFF ratios. We report here that reduction of dimensionality is an effective method to improve remarkably the ON/OFF ratio in lead-free perovskites. Introduction of butylammonium (BA) into the double perovskite Cs2AgBiBr6 forms 2-dimensional BA2CsAgBiBr7, which is confirmed by the well-developed (00l) peaks from powder X-ray diffraction. A 230 nm thick BA2CsAgBiBr7 film is sandwiched in between Ag and Pt electrodes, which demonstrates bipolar resistive switching behavior with a potential ON/OFF ratio up to 107. Reliable and reproducible SET and RESET processes occur at +0.13 V and -0.20 V, respectively. Endurance of 1000 cycles and a retention time of 2 × 104 s are measured. Multi-level storage capability is confirmed by controlling the compliance current. Schottky conduction at the high resistance state (HRS) and ohmic conduction at the low resistance state (LRS) are found to be responsible for resistive switching. The stability test at 85 °C or for 22 days under ambient conditions indicates that BA2CsAgBiBr7 is durably operable.
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Affiliation(s)
- So-Yeon Kim
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
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