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Wu Y, Wang Y, Bao D, Deng X, Zhang S, Yu-Chun L, Ke S, Liu J, Liu Y, Wang Z, Ham P, Hanna A, Pan J, Hu X, Li Z, Zhou J, Wang C. Emerging probing perspective of two-dimensional materials physics: terahertz emission spectroscopy. LIGHT, SCIENCE & APPLICATIONS 2024; 13:146. [PMID: 38951490 PMCID: PMC11217405 DOI: 10.1038/s41377-024-01486-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/16/2023] [Revised: 04/09/2024] [Accepted: 05/15/2024] [Indexed: 07/03/2024]
Abstract
Terahertz (THz) emission spectroscopy (TES) has emerged as a highly effective and versatile technique for investigating the photoelectric properties of diverse materials and nonlinear physical processes in the past few decades. Concurrently, research on two-dimensional (2D) materials has experienced substantial growth due to their atomically thin structures, exceptional mechanical and optoelectronic properties, and the potential for applications in flexible electronics, sensing, and nanoelectronics. Specifically, these materials offer advantages such as tunable bandgap, high carrier mobility, wideband optical absorption, and relatively short carrier lifetime. By applying TES to investigate the 2D materials, their interfaces and heterostructures, rich information about the interplay among photons, charges, phonons and spins can be unfolded, which provides fundamental understanding for future applications. Thus it is timely to review the nonlinear processes underlying THz emission in 2D materials including optical rectification, photon-drag, high-order harmonic generation and spin-to-charge conversion, showcasing the rich diversity of the TES employed to unravel the complex nature of these materials. Typical applications based on THz emissions, such as THz lasers, ultrafast imaging and biosensors, are also discussed. Step further, we analyzed the unique advantages of spintronic terahertz emitters and the future technological advancements in the development of new THz generation mechanisms leading to advanced THz sources characterized by wide bandwidth, high power and integration, suitable for industrial and commercial applications. The continuous advancement and integration of TES with the study of 2D materials and heterostructures promise to revolutionize research in different areas, including basic materials physics, novel optoelectronic devices, and chips for post-Moore's era.
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Affiliation(s)
- Yifei Wu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Yuqi Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Di Bao
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Xiaonan Deng
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Simian Zhang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Lin Yu-Chun
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Shengxian Ke
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Jianing Liu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Yingjie Liu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zeli Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Pingren Ham
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Andrew Hanna
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Jiaming Pan
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Xinyue Hu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zhengcao Li
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Ji Zhou
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Chen Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China.
- Beijing Advanced Innovation Center for Integrated Circuits, 100084, Beijing, China.
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Jiang H, Sun J, Liu F, Zhao Y, Chen X, Dai C, Wen Z. Bi 2S 3/Ti 3C 2-TPP nano-heterostructures induced by near-infrared for photodynamic therapy combined with photothermal therapy on hypoxic tumors. J Nanobiotechnology 2024; 22:123. [PMID: 38504272 PMCID: PMC10953153 DOI: 10.1186/s12951-024-02391-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2024] [Accepted: 03/10/2024] [Indexed: 03/21/2024] Open
Abstract
BACKGROUND Photodynamic therapy (PDT) efficacy of bismuth sulfide (Bi2S3) semiconductor has been severely restricted by its electron-hole pairs (e--h+) separation inefficiency and oxygen (O2) deficiency in tumors, which greatly hinders reactive oxygen species (ROS) generation and further clinical application of Bi2S3 nanoparticles (NPs) in biomedicine. RESULTS Herein, novel Bi2S3/titanium carbide (Ti3C2) two-dimensional nano-heterostructures (NHs) are designed to realize multimode PDT of synchronous O2 self-supply and ROS generation combined with highly efficient photothermal tumor elimination for hypoxic tumor therapy. Bi2S3/Ti3C2 NHs were synthesized via the in situ synthesis method starting from Ti3C2 nanosheets (NSs), a classical type of MXene nanostructure. Compared to simple Bi2S3 NPs, Bi2S3/Ti3C2 NHs significantly extend the absorption to the near-infrared (NIR) region and enhance the photocatalytic activity owing to the improved photogenerated carrier separation, where the hole on the valence band (VB) of Bi2S3 can react with water to supply O2 for the electron on the Ti3C2 NSs to generate ·O2- and ·OH through electron transfer. Furthermore, they also achieve 1O2 generation through energy transfer due to O2 self-supply. After the modification of triphenylphosphium bromide (TPP) on Bi2S3/Ti3C2 NHs, systematic in vitro and in vivo evaluations were conducted, revealing that the synergistic-therapeutic outcome of this nanoplatform enables complete eradication of the U251 tumors without recurrence by NIR laser irradiation, and it can be used for computed tomography (CT) imaging because of the strong X-ray attenuation ability. CONCLUSION This work expands the phototherapeutic effect of Bi2S3-based nanoplatforms, providing a new strategy for hypoxic tumor theranostics.
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Affiliation(s)
- Hanwen Jiang
- Department of Neurology, Brain Ultrasound, The First Affiliated Hospital of Harbin Medical University, Harbin, Heilongjiang Province, 150001, China
- Department of Cardiology, Cardiac Ultrasound, The First Affiliated Hospital of Harbin Medical University, Harbin, Heilongjiang Province, 150001, China
| | - Jingxian Sun
- Key Colleges and Universities Laboratory of Neurosurgery in Heilongjiang Province, Harbin, Heilongjiang Province, 150001, China
- Department of Neurosurgery, The Affiliated Hospital of Qingdao University, Qingdao, Shandong Province, 266005, China
| | - Fucong Liu
- Department of Neurology, Brain Ultrasound, The First Affiliated Hospital of Harbin Medical University, Harbin, Heilongjiang Province, 150001, China
| | - Yuanjiao Zhao
- Department of Neurology, Brain Ultrasound, The First Affiliated Hospital of Harbin Medical University, Harbin, Heilongjiang Province, 150001, China
| | - Xin Chen
- Key Colleges and Universities Laboratory of Neurosurgery in Heilongjiang Province, Harbin, Heilongjiang Province, 150001, China
| | - Changsong Dai
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, China
| | - Zhaohui Wen
- Department of Neurology, Brain Ultrasound, The First Affiliated Hospital of Harbin Medical University, Harbin, Heilongjiang Province, 150001, China.
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Huang L, Zhang L, Zhou J, Li M, Li C, Li C, Zhang J, Wang S, Zeng H. Surface plasmon enhanced THz emission with nanoporous gold supported CdTe. OPTICS EXPRESS 2021; 29:19853-19861. [PMID: 34266087 DOI: 10.1364/oe.424230] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2021] [Accepted: 05/27/2021] [Indexed: 06/13/2023]
Abstract
Terahertz emission by ultrafast excitation of semiconductor/metal interfaces was found strongly enhanced by plasmon resonance. Here, a three-dimensional nanoporous gold (NPG) was used to form semiconductor/metal compound with cadmium telluride (CdTe). We investigated the specific impact of surface plasmon from randomly nanoporous structure in the ultrafast optoelectronic response for THz generation, and observed a THz amplitude enhancement around an order of magnitude from CdTe on NPG compared to that from CdTe on silicon. Moreover, the plasmon enhancement for THz emission from NPG is stronger than that from gold film, indicating that randomly nanoporous structure is also effective for plasmonic enhancement in THz band.
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Wu J, Ma H, Yin P, Ge Y, Zhang Y, Li L, Zhang H, Lin H. Two‐Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202000053] [Citation(s) in RCA: 34] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022] Open
Affiliation(s)
- Jianghong Wu
- Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang College of Information Science & Electronic Engineering Zhejiang University Hangzhou 310027 China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Hangzhou 310024 China
- Institute of Advanced Technology Westlake Institute for Advanced Study 18 Shilongshan Road Hangzhou 310024 China
| | - Hui Ma
- Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang College of Information Science & Electronic Engineering Zhejiang University Hangzhou 310027 China
| | - Peng Yin
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Yanqi Ge
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Yupeng Zhang
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Lan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Hangzhou 310024 China
- Institute of Advanced Technology Westlake Institute for Advanced Study 18 Shilongshan Road Hangzhou 310024 China
| | - Han Zhang
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Hongtao Lin
- Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang College of Information Science & Electronic Engineering Zhejiang University Hangzhou 310027 China
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Fan Z, Xu M, Huang Y, Lei Z, Zheng L, Zhang Z, Zhao W, Zhou Y, Wang X, Xu X, Liu Z. Terahertz Surface Emission from MoSe 2 at the Monolayer Limit. ACS APPLIED MATERIALS & INTERFACES 2020; 12:48161-48169. [PMID: 32990422 DOI: 10.1021/acsami.0c13474] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The surface-charge region of bulk and monolayer MoSe2 is analyzed directly by terahertz (THz) surface emission spectroscopy in a nondestructive way. Both surface nonlinear optical polarization and surface field-induced photocurrent contribute to the THz radiation in both bulk and monolayer MoSe2. The first THz emission mechanism is due to the surface optical rectification and the second one is due to the photogenerated carriers accelerated by the surface depletion field. The THz radiation contribution from the surface optical rectification is basically the same for both bulk and monolayer MoSe2 because of the same symmetry at the surface. However, the contribution from the surface field-induced photocurrent is ∼94.2% in bulk MoSe2 and it goes down to 74.5% in monolayer MoSe2. This is due to the larger surface depletion field in bulk MoSe2 (∼2.54 × 107 V/m) compared with that in monolayer MoSe2 (∼5.42 × 105 V/m), as such THz emission from the bulk is approximately four times larger than that from monolayer MoSe2. This work not only proves the clear THz radiation mechanism from MoSe2 crystals but also affords a THz technology for the surface characterization of two-dimensional materials.
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Affiliation(s)
- Zeyu Fan
- Shaanxi Joint Lab of Graphene, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710069, China
| | - Manzhang Xu
- School of Information Science and Technology, Northwest University, Xi'an 710127, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an 710072, China
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yuanyuan Huang
- Shaanxi Joint Lab of Graphene, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710069, China
| | - Zhen Lei
- Shaanxi Joint Lab of Graphene, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710069, China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an 710072, China
| | - Zhiyong Zhang
- School of Information Science and Technology, Northwest University, Xi'an 710127, China
| | - Wu Zhao
- School of Information Science and Technology, Northwest University, Xi'an 710127, China
| | - Yixuan Zhou
- Shaanxi Joint Lab of Graphene, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710069, China
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an 710072, China
| | - Xinlong Xu
- Shaanxi Joint Lab of Graphene, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710069, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- Centre for Micro-/Nano-Electronics (NOVITAS), School of Electrical & Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore 637553, Singapore
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