Interfacial THz generation from graphene/Si mixed-dimensional van der Waals heterostructure

Emerging probing perspective of two-dimensional materials physics: terahertz emission spectroscopy

Terahertz (THz) emission spectroscopy (TES) has emerged as a highly effective and versatile technique for investigating the photoelectric properties of diverse materials and nonlinear physical processes in the past few decades. Concurrently, research on two-dimensional (2D) materials has experienced substantial growth due to their atomically thin structures, exceptional mechanical and optoelectronic properties, and the potential for applications in flexible electronics, sensing, and nanoelectronics. Specifically, these materials offer advantages such as tunable bandgap, high carrier mobility, wideband optical absorption, and relatively short carrier lifetime. By applying TES to investigate the 2D materials, their interfaces and heterostructures, rich information about the interplay among photons, charges, phonons and spins can be unfolded, which provides fundamental understanding for future applications. Thus it is timely to review the nonlinear processes underlying THz emission in 2D materials including optical rectification, photon-drag, high-order harmonic generation and spin-to-charge conversion, showcasing the rich diversity of the TES employed to unravel the complex nature of these materials. Typical applications based on THz emissions, such as THz lasers, ultrafast imaging and biosensors, are also discussed. Step further, we analyzed the unique advantages of spintronic terahertz emitters and the future technological advancements in the development of new THz generation mechanisms leading to advanced THz sources characterized by wide bandwidth, high power and integration, suitable for industrial and commercial applications. The continuous advancement and integration of TES with the study of 2D materials and heterostructures promise to revolutionize research in different areas, including basic materials physics, novel optoelectronic devices, and chips for post-Moore's era.

Bi2S3/Ti3C2-TPP nano-heterostructures induced by near-infrared for photodynamic therapy combined with photothermal therapy on hypoxic tumors

BACKGROUND

Photodynamic therapy (PDT) efficacy of bismuth sulfide (Bi2S3) semiconductor has been severely restricted by its electron-hole pairs (e--h+) separation inefficiency and oxygen (O2) deficiency in tumors, which greatly hinders reactive oxygen species (ROS) generation and further clinical application of Bi2S3 nanoparticles (NPs) in biomedicine.

RESULTS

Herein, novel Bi2S3/titanium carbide (Ti3C2) two-dimensional nano-heterostructures (NHs) are designed to realize multimode PDT of synchronous O2 self-supply and ROS generation combined with highly efficient photothermal tumor elimination for hypoxic tumor therapy. Bi2S3/Ti3C2 NHs were synthesized via the in situ synthesis method starting from Ti3C2 nanosheets (NSs), a classical type of MXene nanostructure. Compared to simple Bi2S3 NPs, Bi2S3/Ti3C2 NHs significantly extend the absorption to the near-infrared (NIR) region and enhance the photocatalytic activity owing to the improved photogenerated carrier separation, where the hole on the valence band (VB) of Bi2S3 can react with water to supply O2 for the electron on the Ti3C2 NSs to generate ·O2- and ·OH through electron transfer. Furthermore, they also achieve 1O2 generation through energy transfer due to O2 self-supply. After the modification of triphenylphosphium bromide (TPP) on Bi2S3/Ti3C2 NHs, systematic in vitro and in vivo evaluations were conducted, revealing that the synergistic-therapeutic outcome of this nanoplatform enables complete eradication of the U251 tumors without recurrence by NIR laser irradiation, and it can be used for computed tomography (CT) imaging because of the strong X-ray attenuation ability.

CONCLUSION

This work expands the phototherapeutic effect of Bi2S3-based nanoplatforms, providing a new strategy for hypoxic tumor theranostics.

Enhancement of Terahertz Radiation by Surface Plasmons Based on CdTe Thin Films

Terahertz (THz) time-domain spectroscopy (TDS) is a powerful tool used to characterize the surface/interface of materials, and semiconductor/metal interfaces can generate THz emission through ultrafast optical excitation, which can be further improved through the optical excitation of surface plasmons. Here, we assembled cadmium telluride (CdTe) on an AuAg alloy (Au₂₅Ag₇₅, wt.%) substrate and obtained five times stronger THz emission compared with silicon substrate, and found that the enhancement can be tuned by controlling the thickness of the semiconductor materials and plasmonic metal substrates. We believe that our results not only promote the development of THz emission enhancement, but also provide a straightforward way of producing small, thin, and more efficient terahertz photonic devices.

Surface plasmon enhanced THz emission with nanoporous gold supported CdTe

Terahertz emission by ultrafast excitation of semiconductor/metal interfaces was found strongly enhanced by plasmon resonance. Here, a three-dimensional nanoporous gold (NPG) was used to form semiconductor/metal compound with cadmium telluride (CdTe). We investigated the specific impact of surface plasmon from randomly nanoporous structure in the ultrafast optoelectronic response for THz generation, and observed a THz amplitude enhancement around an order of magnitude from CdTe on NPG compared to that from CdTe on silicon. Moreover, the plasmon enhancement for THz emission from NPG is stronger than that from gold film, indicating that randomly nanoporous structure is also effective for plasmonic enhancement in THz band.

Terahertz Surface Emission from MoSe2 at the Monolayer Limit

The surface-charge region of bulk and monolayer MoSe₂ is analyzed directly by terahertz (THz) surface emission spectroscopy in a nondestructive way. Both surface nonlinear optical polarization and surface field-induced photocurrent contribute to the THz radiation in both bulk and monolayer MoSe₂. The first THz emission mechanism is due to the surface optical rectification and the second one is due to the photogenerated carriers accelerated by the surface depletion field. The THz radiation contribution from the surface optical rectification is basically the same for both bulk and monolayer MoSe₂ because of the same symmetry at the surface. However, the contribution from the surface field-induced photocurrent is ∼94.2% in bulk MoSe₂ and it goes down to 74.5% in monolayer MoSe₂. This is due to the larger surface depletion field in bulk MoSe₂ (∼2.54 × 10⁷ V/m) compared with that in monolayer MoSe₂ (∼5.42 × 10⁵ V/m), as such THz emission from the bulk is approximately four times larger than that from monolayer MoSe₂. This work not only proves the clear THz radiation mechanism from MoSe₂ crystals but also affords a THz technology for the surface characterization of two-dimensional materials.