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Antolini F. Direct Optical Patterning of Quantum Dots: One Strategy, Different Chemical Processes. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2008. [PMID: 37446523 DOI: 10.3390/nano13132008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2023] [Revised: 06/30/2023] [Accepted: 07/03/2023] [Indexed: 07/15/2023]
Abstract
Patterning, stability, and dispersion of the semiconductor quantum dots (scQDs) are three issues strictly interconnected for successful device manufacturing. Recently, several authors adopted direct optical patterning (DOP) as a step forward in photolithography to position the scQDs in a selected area. However, the chemistry behind the stability, dispersion, and patterning has to be carefully integrated to obtain a functional commercial device. This review describes different chemical strategies suitable to stabilize the scQDs both at a single level and as an ensemble. Special attention is paid to those strategies compatible with direct optical patterning (DOP). With the same purpose, the scQDs' dispersion in a matrix was described in terms of the scQD surface ligands' interactions with the matrix itself. The chemical processes behind the DOP are illustrated and discussed for five different approaches, all together considering stability, dispersion, and the patterning itself of the scQDs.
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Affiliation(s)
- Francesco Antolini
- Fusion and Technologies for Nuclear Safety and Security Department, Physical Technology for Safety and Health Division, ENEA C.R. Frascati, Via E. Fermi 45, 00044 Frascati, Italy
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2
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Kim S, Byun YY, Lee I, Cho W, Kim G, Culebras M, Jang J, Cho C. Organic Thermoelectric Nanocomposites Assembled via Spraying Layer-by-Layer Method. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13050866. [PMID: 36903743 PMCID: PMC10005322 DOI: 10.3390/nano13050866] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2023] [Revised: 02/18/2023] [Accepted: 02/24/2023] [Indexed: 05/31/2023]
Abstract
Thermoelectric (TE) materials have been considered as a promising energy harvesting technology for sustainably providing power to electronic devices. In particular, organic-based TE materials that consist of conducting polymers and carbon nanofillers make a large variety of applications. In this work, we develop organic TE nanocomposites via successive spraying of intrinsically conductive polymers such as polyaniline (PANi) and poly(3,4-ethylenedioxy- thiophene):poly(styrenesulfonate) (PEDOT:PSS) and carbon nanofillers, and single-walled carbon nanotubes (SWNT). It is found that the growth rate of the layer-by-layer (LbL) thin films, which comprise a PANi/SWNT-PEDOT:PSS repeating sequence, made by the spraying method is greater than that of the same ones assembled by traditional dip coating. The surface structure of multilayer thin films constructed by the spraying approach show excellent coverage of highly networked individual and bundled SWNT, which is similarly to what is observed when carbon nanotubes-based LbL assemblies are formed by classic dipping. The multilayer thin films via the spray-assisted LbL process exhibit significantly improved TE performances. A 20-bilayer PANi/SWNT-PEDOT:PSS thin film (~90 nm thick) yields an electrical conductivity of 14.3 S/cm and Seebeck coefficient of 76 μV/K. These two values translate to a power factor of 8.2 μW/m·K2, which is 9 times as large as the same films fabricated by a classic immersion process. We believe that this LbL spraying method will open up many opportunities in developing multifunctional thin films for large-scaled industrial use due to rapid processing and the ease with which it is applied.
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Affiliation(s)
- Seojin Kim
- Department of Carbon Convergence Engineering, College of Engineering, Wonkwang University, Iksan 54538, Republic of Korea
| | - You Young Byun
- Department of Carbon Convergence Engineering, College of Engineering, Wonkwang University, Iksan 54538, Republic of Korea
| | - InYoung Lee
- Department of Carbon Convergence Engineering, College of Engineering, Wonkwang University, Iksan 54538, Republic of Korea
| | - Woohyeon Cho
- Core Facility for Supporting Analysis & Imaging of Biomedical Materials, Wonkwang University, Iksan 54538, Republic of Korea
| | - Gyungho Kim
- DMT Company, 60, Wanggungnonggong Danji-Gil, Wanggung-Myeon, Iksan 54576, Republic of Korea
| | - Mario Culebras
- Institute of Materials Science (ICMUV), University of Valencia, 46980 Paterna, Spain
| | - Junho Jang
- Wearable Platform Materials Technology Center (WMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Chungyeon Cho
- Department of Carbon Convergence Engineering, College of Engineering, Wonkwang University, Iksan 54538, Republic of Korea
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Lee HE, Lee D, Lee TI, Jang J, Jang J, Lim YW, Shin JH, Kang SM, Choi GM, Joe DJ, Kim JH, Lee SH, Park SH, Park CB, Kim TS, Lee KJ, Bae BS. Siloxane Hybrid Material-Encapsulated Highly Robust Flexible μLEDs for Biocompatible Lighting Applications. ACS APPLIED MATERIALS & INTERFACES 2022; 14:28258-28269. [PMID: 35674729 DOI: 10.1021/acsami.2c03922] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Flexible micro-light-emitting diodes (f-μLEDs) have been regarded as an attractive light source for the next-generation human-machine interfaces, thanks to their noticeable optoelectronic performances. However, when it comes to their practical utilizations fulfilling industrial standards, there have been unsolved reliability and durability issues of the f-μLEDs, despite previous developments in the high-performance f-μLEDs for various applications. Herein, highly robust flexible μLEDs (f-HμLEDs) with 20 × 20 arrays, which are realized by a siloxane-based organic-inorganic hybrid material (SHM), are reported. The f-HμLEDs are created by combining the f-μLED fabrication process with SHM synthesis procedures (i.e., sol-gel reaction and successive photocuring). The outstanding mechanical, thermal, and environmental stabilities of our f-HμLEDs are confirmed by a host of experimental and theoretical examinations, including a bending fatigue test (105 bending/unbending cycles), a lifetime accelerated stress test (85 °C and 85% relative humidity), and finite element method simulations. Eventually, to demonstrate the potential of our f-HμLEDs for practical applications of flexible displays and/or biomedical devices, their white light emission due to quantum dot-based color conversion of blue light emitted by GaN-based f-HμLEDs is demonstrated, and the biocompatibility of our f-HμLEDs is confirmed via cytotoxicity and cell proliferation tests with muscle, bone, and neuron cell lines. As far as we can tell, this work is the first demonstration of the flexible μLED encapsulation platform based on the SHM, which proved its mechanical, thermal, and environmental stabilities and biocompatibility, enabling us to envisage biomedical and/or flexible display applications using our f-HμLEDs.
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Affiliation(s)
- Han Eol Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- Wearable Platform Materials Technology Center (WMC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- Division of Advanced Materials Engineering, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju-si 54896, Jeollabuk-do, Republic of Korea
| | - Daewon Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- Wearable Platform Materials Technology Center (WMC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Tae-Ik Lee
- Joining R&D Group, Root Industry Technology Center, Korea Institute of Industrial Technology (KITECH), 156 Gaetbeol-ro, Yeonsu-gu, Incheon 21999, Republic of Korea
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jinhyeong Jang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Junho Jang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- Wearable Platform Materials Technology Center (WMC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Young-Woo Lim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- Wearable Platform Materials Technology Center (WMC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jung Ho Shin
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- Wearable Platform Materials Technology Center (WMC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Seung-Mo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- Wearable Platform Materials Technology Center (WMC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Gwang-Mun Choi
- ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34141, Republic of Korea
| | - Daniel J Joe
- Safety Measurement Institute, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea
| | - Jeong Hyeon Kim
- Division of Advanced Materials Engineering, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju-si 54896, Jeollabuk-do, Republic of Korea
| | - Seung Hyung Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- Wearable Platform Materials Technology Center (WMC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sang Hyun Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- Wearable Platform Materials Technology Center (WMC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Chan Beum Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Taek-Soo Kim
- Wearable Platform Materials Technology Center (WMC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Keon Jae Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- Wearable Platform Materials Technology Center (WMC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Byeong-Soo Bae
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- Wearable Platform Materials Technology Center (WMC), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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Zhou S, Xie B, Yang X, Zhang X, Luo X. Superior hydrophobic silica-coated quantum dot for stable optical performance in humid environments. NANOTECHNOLOGY 2022; 33:195202. [PMID: 35086083 DOI: 10.1088/1361-6528/ac4f81] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2021] [Accepted: 01/27/2022] [Indexed: 06/14/2023]
Abstract
Quantum dot (QD) features many exceptional optical performances but is also vulnerable to moisture which results in structural damage and luminescent decrease. This work provided and fabricated a novel superior hydrophobic methylated core/shell silica-coated QD (MSQ) for high water stability. QD was coated with a silica shell and then surface-methylated by trimethyl silane. Mercaptopropyl trimethoxy silane, tetraethyl orthosilicate, and ethoxy trimethyl silane were utilized as the ligand exchanger, the raw material of silica, and the surface modification, respectively. Characterization results illustrated the core/shell structure of MSQ. In addition, its water contact angle was up to 159.6°. QD-, silica-coated QD(SQ)-, and MSQ-silicone were made and displayed similar absorption, emission, and excitation spectra but different water stabilities. The photoluminescence intensity and photoluminescence quantum yield of MSQ-silicone hardly changed during 15 d of water immersion, in contrast to the dramatical decrease of other two kinds of composite silicone. Specifically, the photoluminescence quantum yield decreases of MSQ-, SQ-, and QD-silicone were 1%, 40%, and 43%, respectively. Therefore, MSQ had a much better water stability. The superior hydrophobic methylated silica-coated QD has a great potential to realize the long-term working stability in a humid environment and the wider application in diverse fields.
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Affiliation(s)
- Shuling Zhou
- School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Bin Xie
- School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Xuan Yang
- School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Xinfeng Zhang
- School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Xiaobing Luo
- School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- Wuhan National Laboratory for Optoelectronics, Wuhan 430074, People's Republic of China
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Yang H, Liu Y, Hao J, Tang H, Ding S, Wang Z, Fang F, Wu D, Zhang W, Liu H, Xu B, Lu R, Yang L, Liu P, Wang K, Sun XW. Alloyed Green-Emitting CdZnSeS/ZnS Quantum Dots with Dense Protective Layers for Stable Lighting and Display Applications. ACS APPLIED MATERIALS & INTERFACES 2021; 13:32217-32225. [PMID: 34184525 DOI: 10.1021/acsami.1c07647] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Alloyed green-emitting CdZnSeS/ZnS quantum dots (QDs) demonstrate potential applications in solid-state lighting and displays owing to their various advantages, such as high color purity, light conversion efficiency, and color rendering index. However, their applications in white light-emitting diodes (WLEDs) are limited by their poor photostabilities on blue-emitting gallium nitride (GaN) LED chips. In this study, the effect of the specific surface area (SSA) in the coating layers on the photostabilities of QDs was investigated. SSA was adjusted by controlling the proportions of dense aluminum oxide (AlOX) layers and porous silica dioxide (SiO2) layers to fabricate QD protective layers via a catalyst-free sol-gel method. The results showed that the synthesized AlOX possessing the lowest SSA among the synthesis protective layers presented the best QD photostabilities on the LED chips. Moreover, they exhibited a 9.9-fold increase in the operational lifetime (T80) compared to that of pristine QDs. In addition, the QD-based WLED achieved an excellent display performance with a wide color gamut (115%) of the National Television System Committee (NTSC) color gamut standard. This approach offers a promising strategy for enhancing the QD photostabilities for applications in solid-state lighting and displays by coating the protective layers on the QD surface.
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Affiliation(s)
- Hongcheng Yang
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
| | - Yizun Liu
- Shenzhen Planck Innovation Technologies Co., Ltd., Shenzhen 518116, Guangdong, China
| | - Junjie Hao
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Planck Innovation Technologies Co., Ltd., Shenzhen 518116, Guangdong, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
| | - Haodong Tang
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
| | - Shihao Ding
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
| | - Zhaojin Wang
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
| | - Fan Fang
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
| | - Dan Wu
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
| | - Wenda Zhang
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
| | - Haochen Liu
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
| | - Bing Xu
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Planck Innovation Technologies Co., Ltd., Shenzhen 518116, Guangdong, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
| | - Rui Lu
- Tianjin Zhonghuan Quantum Tech Co., Ltd., Tianjin 300380, China
| | - Lei Yang
- Tianjin Zhonghuan Quantum Tech Co., Ltd., Tianjin 300380, China
| | - Pai Liu
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
| | - Kai Wang
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
| | - Xiao Wei Sun
- Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
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Li JS, Tang Y, Li ZT, Li JX, Ding XR, Yu BH, Yu SD, Ou JZ, Kuo HC. Toward 200 Lumens per Watt of Quantum-Dot White-Light-Emitting Diodes by Reducing Reabsorption Loss. ACS NANO 2021; 15:550-562. [PMID: 33356139 DOI: 10.1021/acsnano.0c05735] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In this study, we analyze the influence of the pore structure of an SBA-15 particle on the light emission from its inner adsorbed quantum dots (QDs) and outer light-emitting diode (LED) chips. It is found that the particle features of a high refractive index, comparable feature size of pore structure, and lower amount of QD adsorption help with QD light extraction, demonstrating a mechanism to suppress QD light propagating through pores and thus reducing the reabsorption loss. We consequently developed highly efficient QD white LEDs with wet-mixing QD/SBA-15 nanocomposite particles (NPs) by further optimizing the packaging methods and the introduced NP mass ratio. The LEDs demonstrated a record luminous efficacy (the ratio of luminous flux to electrical power) of 206.8 (entrusted test efficiency of 205.8 lm W-1 certificated by China National Accreditation Service) and 137.6 lm W-1 at 20 mA for white LEDs integrating only green QDs and green-red QD color convertors, respectively, with improved operating stability. These results are comparable to conventional phosphor-based white LEDs, which can be a starting point for white LEDs only using QDs as convertors toward commercialization in the near future.
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Affiliation(s)
- Jia-Sheng Li
- National & Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, China
- Guangdong Provincial Key Laboratory of Semiconductor Micro Display, Foshan Nationstar Optoelectronics Company Ltd., Foshan 528000, China
| | - Yong Tang
- National & Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, China
| | - Zong-Tao Li
- National & Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, China
- Guangdong Provincial Key Laboratory of Semiconductor Micro Display, Foshan Nationstar Optoelectronics Company Ltd., Foshan 528000, China
| | - Jie-Xin Li
- National & Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, China
| | - Xin-Rui Ding
- National & Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, China
| | - Bin-Hai Yu
- National & Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, China
| | - Shu-Dong Yu
- National & Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, China
| | - Jian-Zhen Ou
- School of Engineering, RMIT University Melbourne 3000, Victoria, Australia
| | - Hao-Chung Kuo
- Department of Photonics and Institute of Electro-Optical Engineering College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, China
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Prodanov MF, Gupta SK, Kang C, Diakov MY, Vashchenko VV, Srivastava AK. Thermally Stable Quantum Rods, Covering Full Visible Range for Display and Lighting Application. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2004487. [PMID: 33345459 DOI: 10.1002/smll.202004487] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2020] [Revised: 11/09/2020] [Indexed: 06/12/2023]
Abstract
Recently, quantum rods (QRs) have been studied heavily for display and lighting applications. QRs offer serious advantages over the quantum dots such as higher light out-coupling coefficient, and polarized emission. The QR enhancement films double liquid crystal display efficiency. However, it is still a challenge to synthesize good quality green (λem ≈ 520 nm) and blue (λem ≈ 465 nm) emitting QRs, due to very large bathochromic shift during the shell growth. Furthermore, until now, the presence of cadmium in high-quality QRs is inevitable, but due to its toxicity, RoHS has restricted the amount of cadmium in consumer products. In this article, low Cd core-shell QRs, with a narrow-band luminescence spectrum tuned in the whole visible range, are prepared by replacing Cd with Zn in a one-pot post-synthetic development. These QRs possess the good thermal stability of photoluminescence properties, and therefore, show high performance for the on-chip LED configuration. The designed white LEDs (WLEDs) are characterized by a high brightness of 120000 nits, and color gamut covering 122% NTSC (90% of BT2020), in the 1931CIE color space. Additionally, these LEDs show a high luminous efficiency of 115 lm W-1 . Thus, these quantum rod LED are perfectly viable for display backlighting and lighting applications.
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Affiliation(s)
- Maksym F Prodanov
- State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronics and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Swadesh K Gupta
- State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronics and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Chengbin Kang
- State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronics and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Maksym Y Diakov
- State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronics and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Valerii V Vashchenko
- State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronics and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Abhishek K Srivastava
- State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronics and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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8
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Dou B, Hua Y, Lei R, Deng D, Huang F, Xu S. Ln3+ doped phosphor-in-glass: A new choice of color filter for wide-color gamut white light-emitting diodes. J Colloid Interface Sci 2020; 563:139-144. [DOI: 10.1016/j.jcis.2019.12.071] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2019] [Revised: 11/28/2019] [Accepted: 12/16/2019] [Indexed: 11/15/2022]
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