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Liu F, Lin X, Yan Y, Gan X, Cheng Y, Luo X. Self-Powered Programmable van der Waals Photodetectors with Nonvolatile Semifloating Gate. NANO LETTERS 2023; 23:11645-11654. [PMID: 38088857 DOI: 10.1021/acs.nanolett.3c03500] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Tunable photovoltaic photodetectors are of significant relevance in the fields of programmable and neuromorphic optoelectronics. However, their widespread adoption is hindered by intricate architectural design and energy consumption challenges. This study employs a nonvolatile MoTe2/hexagonal boron nitride/graphene semifloating photodetector to address these issues. Programed with pulsed gate voltage, the MoTe2 channel can be reconfigured from an n+-n to a p-n homojunction and the photocurrent transition changes from negative to positive values. Scanning photocurrent mapping reveals that the negative and positive photocurrents are attributed to Schottky junction and p-n homojunction, respectively. In the p-n configuration, the device demonstrates self-driven, linear, rapid response (∼3 ms), and broadband sensitivity (from 405 to 1500 nm) for photodetection, with typical performances of responsivity at ∼0.5 A/W and detectivity ∼1.6 × 1012 Jones under 635 nm illumination. These outstanding photodetection capabilities emphasize the potential of the semifloating photodetector as a pioneering approach for advancing logical and nonvolatile optoelectronics.
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Affiliation(s)
- Fan Liu
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an 710129, China
| | - Xi Lin
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an 710129, China
| | - Yuting Yan
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an 710129, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Yingchun Cheng
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Xiaoguang Luo
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an 710129, China
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2
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Zhang Q, Hou L, Shautsova V, Warner JH. Ultrathin All-2D Lateral Diodes Using Top and Bottom Contacted Laterally Spaced Graphene Electrodes to WS 2 Semiconductor Monolayers. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18012-18021. [PMID: 36977206 DOI: 10.1021/acsami.2c22014] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The ultrathin nature of two-dimensional (2D) materials opens up opportunities for creating devices that are substantially thinner than using traditional bulk materials. In this article, monolayer 2D materials grown by the chemical vapor deposition method are used to fabricate ultrathin all-2D lateral diodes. We show that placing graphene electrodes below and above the WS2 monolayer, instead of the same side, results in a lateral device with two different Schottky barrier heights. Due to the natural dielectric environment, the bottom graphene layer is wedged between the WS2 and the SiO2 substrate, which has a different doping level than the top graphene layer that is in contact with WS2 and air. The lateral separation of these two graphene electrodes results in a lateral metal-semiconductor-metal junction with two asymmetric barriers but yet retains its ultrathin form of two-layer thickness. The rectification and diode behavior can be exploited in transistors, photodiodes, and light-emitting devices. We show that the device exhibits a rectification ratio up to 90 under a laser power of 1.37 μW at a bias voltage of ±3 V. We demonstrate that both the back-gate voltage and laser illumination can tune the rectification behavior of the device. Furthermore, the device can generate strong red electroluminescence in the WS2 area across the two graphene electrodes under an average flowing current of 2.16 × 10-5 A. This work contributes to the current understanding of the 2D metal-semiconductor heterojunction and offers an idea to obtain all-2D Schottky diodes by retaining the ultrathin device concept.
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Affiliation(s)
- Qianyang Zhang
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, U.K
| | - Linlin Hou
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, U.K
| | - Viktoryia Shautsova
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, U.K
| | - Jamie H Warner
- Materials Science and Engineering Graduate Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States
- Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
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3
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Chen X, Zhang Y, Tian R, Wu X, Luo Z, Liu Y, Wang X, Zhao J, Gan X. Van der Waals Nonlinear Photodetector with Quadratic Photoresponse. NANO LETTERS 2023; 23:1023-1029. [PMID: 36706340 DOI: 10.1021/acs.nanolett.2c04472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
With unique electronic and optical attributes and dangling-bond-free surface, two-dimensional (2D) materials have broadened the functionalities of photodetectors. Here, we report a quadratically nonlinear photodetector (QNPD) composed of a van der Waals (vdW) stacked GaSe/InSe heterostructure. Compared with the reported 2D material-based photodetectors, the extra second-harmonic generation (SHG) process in GaSe/InSe leads to the quadratically nonlinear function between photocurrent and optical intensity, extending the photodetection wavelength from 900 to 1750 nm. The QNPD is highly sensitive to the variation of optical intensity with improved spatial resolution. With the light-light interaction in SHG converted into electrical signal directly, we also demonstrate the QNPD as an autocorrelator for measuring ultrafast pulse widths and an optoelectronic mixer of two modulated pulses for signal processings. The simultaneous involvement of light-light interaction and photoelectric conversion in the vdW stacked QNPD promises its potential to simplify the optoelectronic systems.
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Affiliation(s)
- Xiaoqing Chen
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Yu Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Ruijuan Tian
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Xianghu Wu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Zhengdong Luo
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an710071, China
| | - Yan Liu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an710071, China
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing210093, China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
- School of Microelectronics, Northwestern Polytechnical University, Xi'an710129, China
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4
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Shang H, Hu Y, Gao F, Dai M, Zhang S, Wang S, Ouyang D, Li X, Song X, Gao B, Zhai T, Hu P. Carrier Recirculation Induced High-Gain Photodetector Based on van der Waals Heterojunction. ACS NANO 2022; 16:21293-21302. [PMID: 36468786 DOI: 10.1021/acsnano.2c09366] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) materials have attracted great attention in the field of photodetection due to their excellent electronic and optoelectronic properties. However, the weak optical absorption caused by atomically thin layers and the short lifetime of photocarriers limit their optoelectronic performance, especially for weak light detection. In this work, we design a high-gain photodetector induced by carrier recirculation based on a vertical InSe/GaSe heterojunction. In this architecture, the photogenerated holes are trapped in GaSe due to the built-in electric field, suppressing the recombination rate of photocarriers, so the electrons can recirculate for multiple times in the InSe channel following the generation of a single electron-hole pair, resulting a high photoconductive gain (107). The responsivity and detectivity of the InSe/GaSe heterojunction can reach 1037 A/W and 8.6 × 1013 Jones, which are 1 order of magnitude higher than those of individual InSe. More importantly, the InSe/GaSe heterojunction can respond to weaker light (1 μW/cm2) compared to individual InSe (10 μW/cm2). Utilizing GaSe as the channel and InSe as the electrons trapped layer, the same experimental phenomenon is achieved. This work can provide an approach for designing a highly sensitive device utilizing a 2D van der Waals heterojunction, and it also possesses wide applicability for other materials.
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Affiliation(s)
- Huiming Shang
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin150080,China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Yunxia Hu
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - Feng Gao
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Shichao Zhang
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin150080,China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Shuai Wang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
| | - Decai Ouyang
- School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan430074, P. R. China
| | - Xinyu Li
- School of Physics, Harbin Institute of Technology, Harbin150080, China
| | - Xin Song
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin150080,China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
| | - Bo Gao
- School of Physics, Harbin Institute of Technology, Harbin150080, China
| | - Tianyou Zhai
- School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan430074, P. R. China
| | - PingAn Hu
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin150080,China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin150080, China
- State Key Laboratory of Robotics and Systems, Harbin Institute of Technology, Harbin150080, China
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5
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Li C, Tian R, Chen X, Gu L, Luo Z, Zhang Q, Yi R, Li Z, Jiang B, Liu Y, Castellanos-Gomez A, Chua SJ, Wang X, Sun Z, Zhao J, Gan X. Waveguide-Integrated MoTe 2 p- i- n Homojunction Photodetector. ACS NANO 2022; 16:20946-20955. [PMID: 36413764 DOI: 10.1021/acsnano.2c08549] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) materials, featuring distinctive electronic and optical properties and dangling-bond-free surfaces, are promising for developing high-performance on-chip photodetectors in photonic integrated circuits. However, most of the previously reported devices operating in the photoconductive mode suffer from a high dark current or a low responsivity. Here, we demonstrate a MoTe2 p-i-n homojunction fabricated directly on a silicon photonic crystal (PC) waveguide, which enables on-chip photodetection with ultralow dark current, high responsivity, and fast response speed. The adopted silicon PC waveguide is electrically split into two individual back gates to selectively dope the top regions of the MoTe2 channel in p- or n-types. High-quality reconfigurable MoTe2 (p-i-n, n-i-p, n-i-n, p-i-p) homojunctions are realized successfully, presenting rectification behaviors with ideality factors approaching 1.0 and ultralow dark currents less than 90 pA. Waveguide-assisted MoTe2 absorption promises a sensitive photodetection in the telecommunication O-band from 1260 to 1340 nm, though it is close to MoTe2's absorption band-edge. A competitive photoresponsivity of 0.4 A/W is realized with a light on/off current ratio exceeding 104 and a record-high normalized photocurrent-to-dark-current ratio of 106 mW-1. The ultrasmall capacitance of p-i-n homojunction and high carrier mobility of MoTe2 promise a high dynamic response bandwidth close to 34.0 GHz. The proposed device geometry has the advantages of employing a silicon PC waveguide as the back gates to build a 2D material p-i-n homojunction directly and simultaneously to enhance light-2D material interaction. It provides a potential pathway to develop 2D material-based photodetectors, laser diodes, and electro-optic modulators on silicon photonic chips.
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Affiliation(s)
- Chen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Ruijuan Tian
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Xiaoqing Chen
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Linpeng Gu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Zhengdong Luo
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an710071, China
| | - Qiao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Zhiwen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Biqiang Jiang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Yan Liu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an710071, China
| | - Andres Castellanos-Gomez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), MadridE-28049, Spain
| | - Soo-Jin Chua
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore
- LEES Program, Singapore-MIT Alliance for Research & Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, 138602, Singapore
| | - Xiaomu Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing210093, China
| | - Zhipei Sun
- Department of Electronics and Nanoengineering and QTF Centre of Excellence, Aalto University, AaltoFI-00076, Finland
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
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6
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Wang J, Han N, Luo ZD, Zhang M, Chen X, Liu Y, Hao Y, Zhao J, Gan X. Electrically Tunable Second Harmonic Generation in Atomically Thin ReS 2. ACS NANO 2022; 16:6404-6413. [PMID: 35426299 DOI: 10.1021/acsnano.2c00514] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Electrical tuning of second-order nonlinearity in optical materials is attractive to strengthen and expand the functionalities of nonlinear optical technologies, though its implementation remains elusive. Here, we report the electrically tunable second-order nonlinearity in atomically thin ReS2 flakes benefiting from their distorted 1T crystal structure and interlayer charge transfer. Enabled by the efficient electrostatic control of the few-atomic-layer ReS2, we show that second harmonic generation (SHG) can be induced in odd-number-layered ReS2 flakes which are centrosymmetric and thus without intrinsic SHG. Moreover, the SHG can be precisely modulated by the electric field, reversibly switching from almost zero to an amplitude more than 1 order of magnitude stronger than that of the monolayer MoS2. For the even-number-layered ReS2 flakes with the intrinsic SHG, the external electric field could be leveraged to enhance the SHG. We further perform the first-principles calculations which suggest that the modification of in-plane second-order hyperpolarizability by the redistributed interlayer-transferring charges in the distorted 1T crystal structure underlies the electrically tunable SHG in ReS2. With its active SHG tunability while using the facile electrostatic control, our work may further expand the nonlinear optoelectronic functions of two-dimensional materials for developing electrically controllable nonlinear optoelectronic devices.
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Affiliation(s)
- Jing Wang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 China
| | - Nannan Han
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Zheng-Dong Luo
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 China
| | - Xiaoqing Chen
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 China
| | - Yan Liu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Yue Hao
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 China
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7
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Zhang L, Li Z, Yang J, Zhou J, Zhang Y, Zhang H, Li Y. A Fully Integrated Flexible Tunable Chemical Sensor Based on Gold-Modified Indium Selenide Nanosheets. ACS Sens 2022; 7:1183-1193. [PMID: 35380788 DOI: 10.1021/acssensors.2c00281] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/16/2023]
Abstract
In this work, a novel light-modulated bifunctional gas sensor based on Au nanoparticles-modified 2D InSe nanosheets was demonstrated. The prepared sensor displayed a reversible and extremely high response for recognition of nitrogen dioxide (NO2) under visible-light illumination. The sensitivity (1192%) was about 10 times higher than that under dark condition, and the limit of detection (LOD) was 0.17 ppb. In contrast, when sensing ammonia (NH3), higher sensitivity and selectivity were obtained in darkness rather than in light, with sensitivity and LOD of 11% and 0.2 ppm. Furthermore, the sensor possesses decent stability, repeatability, and anti-interference ability. The tunable sensing behavior with light modulation has been clearly studied with the help of density functional theory. A new principle called "carrier storage box" of Au nanoparticles was proposed to explain the change in surface state of InSe under light modulation. Finally, the prepared sensor has been successfully applied to construct a fully integrated wearable device to measure NH3 and NO2 in ambient environment. In all, this work provides a highly competitive gas detection method and paves the way for designing 2D materials-based optoelectronic devices with tunable and multifunctional features.
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Affiliation(s)
- Lu Zhang
- School of Science, Harbin Institute of Technology, Shenzhen 518055, China
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Zhongjun Li
- Department of Neurosurgery, Shenzhen Key Laboratory of Neurosurgery, the First Affiliated Hospital of Shenzhen University/Shenzhen Second People’s Hospital; SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Jiao Yang
- School of Science, Harbin Institute of Technology, Shenzhen 518055, China
| | - Jia Zhou
- School of Science, Harbin Institute of Technology, Shenzhen 518055, China
| | - Yuan Zhang
- Department of Neurosurgery, Shenzhen Key Laboratory of Neurosurgery, the First Affiliated Hospital of Shenzhen University/Shenzhen Second People’s Hospital; SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Han Zhang
- Department of Neurosurgery, Shenzhen Key Laboratory of Neurosurgery, the First Affiliated Hospital of Shenzhen University/Shenzhen Second People’s Hospital; SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Yingchun Li
- School of Science, Harbin Institute of Technology, Shenzhen 518055, China
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China
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8
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Li YD, Zhen WL, Weng SR, Hu HJ, Niu R, Yue ZL, Xu F, Zhu WK, Zhang CJ. Interface effects of Schottky devices built from MoS 2and high work function metals. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:165001. [PMID: 35105834 DOI: 10.1088/1361-648x/ac50db] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2021] [Accepted: 02/01/2022] [Indexed: 06/14/2023]
Abstract
Schottky junctions, formed by high work function metals and semiconductors, are important devices in electronics and optoelectronics. The metal deposition in traditional Schottky interfaces usually damages the semiconductor surface and causes defect states, which reduces the Schottky barrier height and device performance. This can be avoided in the atomically smooth interface formed by two-dimensional (2D) metals and semiconductors. For better interface tailoring engineering, it is particularly important to understand various interface effects in such 2D Schottky devices under critical or boundary conditions. Here we report the fabrication and testing of three types of MoS2devices, i.e., using PtTe2, Cr and Au as contact materials. While the Cr/MoS2contact is an ohmic contact, the other two are Schottky contacts. The van-der-Waals interface of PtTe2-MoS2results in a well-defined OFF state and a significant rectification ratio of 104. This parameter, together with an ideality factor 2.1, outperforms the device based on evaporated Au. Moreover, a device in the intermediate condition is also presented. An abrupt increase in the reverse current is observed and understood based on the enhanced tunneling current. Our work manifests the essential role of doping concentration and provides another example for 2D Schottky interface design.
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Affiliation(s)
- Y D Li
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
- University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - W L Zhen
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - S R Weng
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - H J Hu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - R Niu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - Z L Yue
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - F Xu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - W K Zhu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - C J Zhang
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
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9
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Wu J, Wei M, Mu J, Ma H, Zhong C, Ye Y, Sun C, Tang B, Wang L, Li J, Xu X, Liu B, Li L, Lin H. High-Performance Waveguide-Integrated Bi 2O 2Se Photodetector for Si Photonic Integrated Circuits. ACS NANO 2021; 15:15982-15991. [PMID: 34652907 DOI: 10.1021/acsnano.1c04359] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Due to the excellent electrical and optical properties and their integration capability without lattice matching requirements, low-dimensional materials have received increasing attention in silicon photonic circuits. Bi2O2Se with high carrier mobility, narrow bandgap, and good air stability is very promising for high-performance near-infrared photodetectors. Here, the chemical vapor deposition method is applied to grow Bi2O2Se onto mica, and our developed polycarbonate/polydimethylsiloxane-assisted transfer method enables the clean and intact transfer of Bi2O2Se on top of a silicon waveguide. We demonstrated the Bi2O2Se/Si waveguide integrated photodetector with a small dark current of 72.9 nA, high responsivity of 3.5 A·W-1, fast rise/decay times of 22/78 ns, and low noise-equivalent power of 15.1 pW·Hz-0.5 at an applied voltage of 2 V in the O-band for transverse electric modes. Additionally, a microring resonator is designed for enhancing light-matter interaction, resulting in a wavelength-sensitive photodetector with reduced dark current (15.3 nA at 2 V) and more than a 3-fold enhancement in responsivity at the resonance wavelength, which is suitable for spectrally resolved applications. These results promote the integration of Bi2O2Se with a silicon photonic platform and are expected to accelerate the future use of integrated photodetectors in spectroscopy, sensing, and communication applications.
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Affiliation(s)
- Jianghong Wu
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou 310024, China
| | - Maoliang Wei
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jianglong Mu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, China
| | - Hui Ma
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Chuyu Zhong
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yuting Ye
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou 310024, China
| | - Chunlei Sun
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou 310024, China
| | - Bo Tang
- Institute of Microelectronics, Chinese Academic Society, Beijing 100029, China
| | - Lichun Wang
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Junying Li
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Xiaomin Xu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, China
| | - Lan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou 310024, China
| | - Hongtao Lin
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
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Li X, Chen X, Li S, Chu F, Deng W, Zhang X, Li J, Bao X, An B, You C, Liu F, Zhang Y. High performance sub-bandgap photodetection via internal photoemission based on ideal metal/2D-material van der Waals Schottky interface. NANOSCALE 2021; 13:16448-16456. [PMID: 34522946 DOI: 10.1039/d1nr04770a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have been demonstrated to be promising candidates to design high performance photodetectors owing to their strong light-matter interaction. However, the performance of 2D material photodetectors is still unsatisfactory, such as slow response speed due to defects and vulnerable contact interface, which impede their rapid development in the field of optoelectronics. In this paper, we obtained the ideal and large photosensitive van der Waals Schottky interface by the laminating-flipping method. Hence, a fast response speed (<1 ms) and high detectivity (>1012 Jones) are observed on the van der Waals Schottky junction photodiode. More importantly, benefiting from the flat Schottky interface (the roughness ∼0.6 nm), a sub-bandgap light response modulated by the Schottky barrier height (cut-off edge at 1050 nm) has been detected based on the large Au/MoSe2 sensitive Schottky interface internal photoemission. As a result, a universal strategy for the sub-bandgap near-infrared van der Waals Schottky junction detector of 2D materials was obtained.
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Affiliation(s)
- Xuhong Li
- School of Physics, Beihang University, Beijing 100191, China.
- Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China.
| | - Xiaoqing Chen
- Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China.
| | - Songyu Li
- School of Physics, Beihang University, Beijing 100191, China.
| | - Feihong Chu
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Wenjie Deng
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Xiaobo Zhang
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Jingjie Li
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Xiulong Bao
- School of Electrical and Electronic Engineering, Beijing-Dublin International College (BDIC), University College Dublin, Ireland
| | - Boxing An
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Congya You
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Famin Liu
- School of Physics, Beihang University, Beijing 100191, China.
| | - Yongzhe Zhang
- Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China.
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11
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Luo L, Huang Y, Cheng K, Alhassan A, Alqahtani M, Tang L, Wang Z, Wu J. MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors. LIGHT, SCIENCE & APPLICATIONS 2021; 10:177. [PMID: 34471092 PMCID: PMC8410839 DOI: 10.1038/s41377-021-00619-1] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/18/2021] [Revised: 08/15/2021] [Accepted: 08/18/2021] [Indexed: 06/13/2023]
Abstract
A MXene-GaN-MXene based multiple quantum well photodetector was prepared on patterned sapphire substrate by facile drop casting. The use of MXene electrodes improves the responsivity and reduces dark current, compared with traditional Metal-Semiconductor-Metal (MSM) photodetectors using Cr/Au electrodes. Dark current of the device using MXene-GaN van der Waals junctions is reduced by three orders of magnitude and its noise spectral intensity shows distinct improvement compared with the traditional Cr/Au-GaN-Cr/Au MSM photodetector. The improved device performance is attributed to low-defect MXene-GaN van der Waals interfaces. Thanks to the high quality MXene-GaN interfaces, it is possible to verify that the patterned substrate can locally improve both light extraction and photocurrent collection. The measured responsivity and specific detectivity reach as high as 64.6 A/W and 1.93 × 1012 Jones, respectively, making it a potential candidate for underwater optical detection and communication. The simple fabrication of MXene-GaN-MXene photodetectors spearheaded the way to high performance photodetection by combining the advantages of emerging 2D MXene materials with the conventional III-V materials.
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Affiliation(s)
- Lingzhi Luo
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 610054, Chengdu, China
| | - Yixuan Huang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 610054, Chengdu, China
| | - Keming Cheng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 610054, Chengdu, China
| | - Abdullah Alhassan
- Materials Department, University of California, Santa Barbara, California, 93106, USA
| | - Mahdi Alqahtani
- King Abdulaziz City for Science and Technology (KACST), Riyadh, Saudi Arabia
| | - Libin Tang
- Kunming Institute of Physics, 650223, Kunming, Yunnan, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 610054, Chengdu, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 610054, Chengdu, China.
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, Sichuan, China.
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12
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Xu J, Luo X, Hu S, Zhang X, Mei D, Liu F, Han N, Liu D, Gan X, Cheng Y, Huang W. Tunable Linearity of High-Performance Vertical Dual-Gate vdW Phototransistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008080. [PMID: 33694214 DOI: 10.1002/adma.202008080] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2020] [Revised: 02/02/2021] [Indexed: 06/12/2023]
Abstract
Layered 2D semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve their performance, photogating, photoconductive, photovoltaic, photothermoelectric, and other effects have been used in phototransistors and photodiodes made with 2D semiconductors or hybrid structures. However, it is difficult to achieve the desired high responsivity and linear photoresponse simultaneously in a monopolar conduction channel or a p-n junction. Here, dual-channel conduction with ambipolar multilayer WSe2 is presented by employing the device concept of dual-gate phototransistor, where p-type and n-type channels are produced in the same semiconductor using opposite dual-gating. It is possible to tune the photoconductive gain using a vertical electric field, so that the gain is constant with respect to the light intensity-a linear photoresponse, with a high responsivity of ≈2.5 × 104 A W-1 . Additionally, the 1/f noise of the device is kept at a low level under the opposite dual-gating due to the reduction of current and carrier fluctuation, resulting in a high detectivity of ≈2 × 1013 Jones in the linear photoresponse regime. The linear photoresponse and high performance of the dual-gate WSe2 phototransistor offer the possibility of achieving high-resolution and quantitative light detection with layered 2D semiconductors.
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Affiliation(s)
- Jinpeng Xu
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Xiaoguang Luo
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Siqi Hu
- MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China
| | - Xi Zhang
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Dong Mei
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Fan Liu
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Nannan Han
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Dan Liu
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Xuetao Gan
- MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China
| | - Yingchun Cheng
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, 211816, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, 211816, China
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13
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Zhang X, Liu B, Gao L, Yu H, Liu X, Du J, Xiao J, Liu Y, Gu L, Liao Q, Kang Z, Zhang Z, Zhang Y. Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions. Nat Commun 2021; 12:1522. [PMID: 33750797 PMCID: PMC7943806 DOI: 10.1038/s41467-021-21861-6] [Citation(s) in RCA: 41] [Impact Index Per Article: 13.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2020] [Accepted: 02/17/2021] [Indexed: 01/31/2023] Open
Abstract
The applications of any two-dimensional (2D) semiconductor devices cannot bypass the control of metal-semiconductor interfaces, which can be severely affected by complex Fermi pinning effects and defect states. Here, we report a near-ideal rectifier in the all-2D Schottky junctions composed of the 2D metal 1 T'-MoTe2 and the semiconducting monolayer MoS2. We show that the van der Waals integration of the two 2D materials can efficiently address the severe Fermi pinning effect generated by conventional metals, leading to increased Schottky barrier height. Furthermore, by healing original atom-vacancies and reducing the intrinsic defect doping in MoS2, the Schottky barrier width can be effectively enlarged by 59%. The 1 T'-MoTe2/healed-MoS2 rectifier exhibits a near-unity ideality factor of ~1.6, a rectifying ratio of >5 × 105, and high external quantum efficiency exceeding 20%. Finally, we generalize the barrier optimization strategy to other Schottky junctions, defining an alternative solution to enhance the performance of 2D-material-based electronic devices.
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Affiliation(s)
- Xiankun Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, People's Republic of China
| | - Baishan Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China
| | - Li Gao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China
| | - Huihui Yu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China
| | - Xiaozhi Liu
- Collaborative Innovation Center of Quantum Matter, Beijing, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Junli Du
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China
| | - Jiankun Xiao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China
| | - Yihe Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China
| | - Lin Gu
- Collaborative Innovation Center of Quantum Matter, Beijing, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Qingliang Liao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China
| | - Zhuo Kang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China
| | - Zheng Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China.
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, People's Republic of China.
| | - Yue Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, People's Republic of China.
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, People's Republic of China.
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14
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Galiy PV, Nenchuk TM, Ciszewski A, Mazur P, Buzhuk YM, Tsvetkova OV. Self-assembled indium nanostructures formation on InSe (0001) surface. APPLIED NANOSCIENCE 2020. [DOI: 10.1007/s13204-020-01421-y] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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