InTeI: a novel wide-bandgap 2D material with desirable stability and highly anisotropic carrier mobility

Vanadium incorporation in 2D-layered MoSe2

Recent advances in experimental techniques have made it possible to manipulate the structural and electronic properties of two-dimensional layered materials (2DM) through interaction with foreign atoms. Using quantum mechanics calculations based on the density functional theory, we explored the dependency of the structural, energetic, electronic, and magnetic properties of the interaction between Vanadium (V) atoms and monolayer and bilayer MoSe2. Spin-polarized metallic behavior was observed for high V concentration, and a semiconductor/metal interface emerged due to V adsorption on top of BL MoSe2. Our research demonstrated that the functionalization of 2D materials makes an important contribution to the design of spintronic devices based on a 2D-layered materials platform.

Auxetic and multiferroic MP5 (M = Al, Ga): a novel 2D material with negative Possion's ratio and high anisotropic carrier mobility

In the field of materials science, the development of multifunctional 2D materials has been a long-standing research objective. In this study, we employ first-principles calculations to predict a novel 2D material named MP5 (M = Al, Ga), which exhibits ferroelasticity, ferroelectricity, negative Poisson's ratio, and high anisotropic carrier mobility. Our investigation reveals that a single layer of MP5 displays multiferroic behavior, wherein ferroelasticity and ferroelectricity are coupled. The remarkable structural anisotropy of MP5 enables easy switching between ferroelastic and ferroelectric states, rendering it suitable for nonvolatile memory applications. Simultaneously, monolayer AlP5 (GaP5) demonstrates a negative Poisson's ratio of -0.074 (-0.058) and a carrier mobility of up to 91 720 cm2 V-1 S-1 (99 690 cm2 V-1 S-1). These exceptional properties position monolayer MP5 as a highly versatile and promising 2D material for implementation in nanomechanical and microelectromechanical devices.

Janus GaOClX (X = F, Br, and I) monolayers as predicted using first-principles calculations: a novel class of nanodielectrics with superior energy storage properties

Dielectric materials play an important role in devices for energy conversion and storage. Based on first-principles calculations, novel two-dimensional Janus GaOClX (X = F, Br, and I) monolayers with superior energy storage properties are predicted. They are indirect-bandgap semiconductors with bandgaps in the range of 2.18-4.36 eV, and possess anisotropic carrier mobility, strong mechanical flexibility, and excellent out-of-plane piezoelectricity. More importantly, it is found that the GaOCl monolayer and Janus GaOClX monolayers could exhibit an ultrahigh energy storage density (as high as 893.32 J cm-3) comparable to those of electrochemical supercapacitors and batteries, unparalleled by other dielectric materials reported to date. This work opens up a new window in searching for novel dielectric materials, which could be used in dielectric capacitors with superior energy storage density and power density, excellent efficiency and thermal stability.

Two-Dimensional Violet Phosphorus P11: A Large Band Gap Phosphorus Allotrope

The discovery of novel large band gap two-dimensional (2D) materials with good stability and high carrier mobility will innovate the next generation of electronics and optoelectronics. A new allotrope of 2D violet phosphorus P₁₁ was synthesized via a salt flux method in the presence of bismuth. Millimeter-sized crystals of violet-P₁₁ were collected after removing the salt flux with DI water. From single-crystal X-ray diffraction, the crystal structure of violet-P₁₁ was determined to be in the monoclinic space group C2/c (no. 15) with unit cell parameters of a = 9.166(6) Å, b = 9.121(6) Å, c = 21.803(14)Å, β = 97.638(17)°, and a unit cell volume of 1807(2) ų. The structure differences between violet-P₁₁, violet-P₂₁, and fibrous-P₂₁ are discussed. The violet-P₁₁ crystals can be mechanically exfoliated down to a few layers (∼6 nm). Photoluminescence and Raman measurements reveal the thickness-dependent nature of violet-P₁₁, and exfoliated violet-P₁₁ flakes were stable in ambient air for at least 1 h, exhibiting moderate ambient stability. The bulk violet-P₁₁ crystals exhibit excellent stability, being stable in ambient air for many days. The optical band gap of violet-P₁₁ bulk crystals is 2.0(1) eV measured by UV-Vis and electron energy-loss spectroscopy measurements, in agreement with density functional theory calculations which predict that violet-P₁₁ is a direct band gap semiconductor with band gaps of 1.8 and 1.9 eV for bulk and monolayer, respectively, and with a high carrier mobility. This band gap is the largest among the known single-element 2D layered bulk crystals and thus attractive for various optoelectronic devices.

W4PCl11 monolayer: an unexplored 2D material with moderate direct bandgap and strong visible-light absorption for highly efficient solar cells

The discovery of novel two-dimensional (2D) materials with excellent electronic and optoelectronic properties have attracted much scientific attention. Based on the first-principles calculations, we predict an unexplored 2D W₄PCl₁₁ monolayer, which is potentially strippable from its bulk counterpart with the exfoliation energy of only 0.16 J m^-2. The dynamical, thermal, and mechanical stabilities have also been confirmed. Remarkably, W₄PCl₁₁ monolayer is direct semiconductor with a bandgap of 1.25 eV, which endows the monolayer with very strong visible-light absorption in the magnitude of 10⁵ cm^-1. Meanwhile, the calculated carrier mobilities of W₄PCl₁₁ monolayer can reach to 10³ cm² V^-1 s^-1. Considering the moderate direct bandgap and high carrier mobility, W₄PCl₁₁ monolayer should be a superior candidate for the donor material of excitonic solar cells. The estimated power conversion efficiency of the fabricated W₄PCl₁₁/Bi₂WO₆ heterojunction reaches as high as 21.64%, which much superior to those of most recently reported 2D heterojunction. All these outstanding properties accompanied with its experimental feasibility endows W₄PCl₁₁ monolayer with promising photovoltaic applications.

Monolayer GaOCl: a novel wide-bandgap 2D material with hole-doping-induced ferromagnetism and multidirectional piezoelectricity

Two-dimensional (2D) materials with excellent properties are emerging as promising candidates in electronics and spintronics. In this work, a novel GaOCl monolayer is proposed and studied systematically based on first-principles calculations. With excellent thermal and dynamic stability at room temperature, its wide direct bandgap (4.46 eV) can be further modulated under applied strains. The 2D semiconductor exhibits high mechanical flexibility, and anisotropy in Poisson's ratio and carrier mobilities, endowing it with a broad spectrum of electronic and optoelectronic applications. More importantly, the GaOCl monolayer has spontaneous magnetization induced by hole doping and shows outstanding multidirectional piezoelectricity, which are comparable with those of either magnetic or piezoelectric 2D materials. Our calculations indicate that the GaOCl monolayer with wide bandgaps and tunable piezoelectricity and ferromagnetism could be promising for applications in multifunctional integrated nano-devices with high performance.

High electron mobility and wide-bandgap properties in a novel 1D PdGeS3 nanochain

As a versatile platform, one-dimensional (1D) electronic systems host plenty of excellent merits, such as high length-to-diameter ratios, flexible mechanical properties, and manageable electronic characteristics, which endow them with significant potential applications in catalysts, flexible wearable devices, and multifunctional integrated circuits. Herein, based on first-principles calculations, we propose a versatile 1D PdGeS₃ nanochain system. Our calculations show that the 1D PdGeS₃ nanochain can be synthesized simply from its bulk crystal by exfoliation methods and can stably exist at room temperature. The 1D PdGeS₃ nanochain is an indirect semiconductor with a wide bandgap of 2.86 eV, and such a bandgap can be effectively modulated by strain. Remarkably, the electron mobility of the 1D PdGeS₃ nanochain reaches as high as 1506 cm² V^-1 s^-1, which is one to two orders of magnitude larger than those of most reported 1D materials and even some 2D materials. Such high electron mobility accompanied with low hole mobility endow the 1D PdGeS₃ nanochain with the capacity of the separation of carriers. Our work shows that the 1D PdGeS₃ nanochain is a promising candidate for applications in novel multifunctional nanoelectronic devices.

Ultrahigh mechanical flexibility induced superior piezoelectricity of InSeBr-type 2D Janus materials

InSeBr-Type monolayers, ternary In(Se,S)(Br,Cl) compounds, are typical two-dimensional (2D) Janus materials and can be exfoliated from their bulk crystals. The structural stability, electronic properties, mechanical flexibility, and intrinsic piezoelectricity of these InSeBr-type 2D Janus monolayers are comprehensively investigated by first-principles calculations. Our calculations show that the stable InSeBr-type monolayers exhibit ultrahigh mechanical flexibility with low Young's moduli. Due to the amazing flexibility of the InSeBr monolayer with an ultra-low Young's modulus of 0.81 N m^-1, the piezoelectric strain coefficient d₁₁ can reach 10³ pm V^-1 orders of magnitude (around 2361-3224 pm V^-1), which is larger than those of reported 2D materials and even superior to those of conventional perovskite bulk materials. Such a superior piezoelectric response of InSeBr-type monolayers could facilitate their practical applications in sensors and energy harvesters.

Layer-Dependent Raman Spectroscopy and Electronic Applications of Wide-Bandgap 2D Semiconductor β-ZrNCl

In recent years, 2D layered semiconductors have received much attention for their potential in next-generation electronics and optoelectronics. Wide-bandgap 2D semiconductors are especially important in the blue and ultraviolet wavelength region, although there are very few 2D materials in this region. Here, monolayer β-type zirconium nitride chloride (β-ZrNCl) is isolated for the first time, which is an air-stable layered material with a bandgap of ≈3.0 eV in bulk. Systematical investigation of layer-dependent Raman scattering of ZrNCl from monolayer, bilayer, to bulk reveals a blueshift of its out-of-plane A_1g peak at ≈189 cm^-1 . Importantly, this A_1g peak is absent in the monolayer, suggesting that it is a fingerprint to quickly identify the monolayer and for the thickness determination of 2D ZrNCl. The back gate field-effect transistor based on few-layer ZrNCl shows a high on/off ratio of 10⁸ . These results suggest the potential of 2D β-ZrNCl for electronic applications.

Prediction of beryllium clusters (Ben; n = 3-25) from first principles

Evolutionary searches using the USPEX method (Universal Structure Predictor: Evolutionary Xtallography) combined with density functional theory (DFT) calculations were performed to obtain the global minimum structures of beryllium (Be_n, n = 3-25) clusters. The thermodynamic stability, optoelectronic and photocatalytic properties as well as the nature of bonding are considered for the most stable clusters. It is found that the cluster with n = 15 is the transition point at which the configurations change from 3D hollow cages to filled cage structures (with an interior atom appearing in the structure). All the ground state structures are energetically favorable with negative binding energies, suggesting good synthetic feasibility for these structures. The calculated relative stabilities and electronic structure show that the Be₄, Be₁₀ and, Be₁₇ clusters are the most stable structures and can be considered as superatoms. The electron configurations of Be₄, Be₁₀ and Be₁₇ clusters with 8, 20 and 34 electrons are identified as 1S² 1P⁶, 1S² 1P⁶ 1D¹⁰ 2S², 1S² 1P⁶ 1D¹⁰ 2S² 1F¹⁴, respectively. Theoretical simulations determined that all the ground state structures exhibit excellent thermal stability, where the upper-limit temperature that the structures can tolerate is 900 K. During AIMD simulation of O₂ adsorption onto the Be₁₇ cluster an interesting phenomenon was happening in which the pristine Be₁₇ cluster becomes a new stable Be₁₇O₁₆ cluster. Based on ELF (electron localization function) analysis, it can be concluded that the Be-Be bonds in the small clusters are primarily of van der Waals type, while for the larger clusters, the bonds are of metallic nature. The Be_n clusters show very strong absorption in the UV and visible regions with absorption coefficients larger than 10⁵ cm^-1, which suggests a wide range of potential advanced optoelectronics applications. The Be₁₇ cluster has a suitable band alignment in the visible-light excitation region which will produce enhanced photocatalytic activities (making it a promising material for water splitting).

Prediction of unexpected B n P n structures: promising materials for non-linear optical devices and photocatalytic activities

In the present work, a modern method of crystal structure prediction, namely USPEX conjugated with density functional theory (DFT) calculations, was used to predict the new stable structures of B n P n (n = 12, 24) clusters. Since B12N12 and B24N24 fullerenes have been synthesized experimentally, it motivated us to explore the structural prediction of B12P12 and B24P24 clusters. All new structures were predicted to be energetically favorable with negative binding energy in the range from -4.7 to -4.8 eV per atom, suggesting good experimental feasibility for the synthesis of these structures. Our search for the most stable structure of B n P n clusters led us to classify the predicted structures into two completely distinct structures such as α-B n P n and β-B n P n phases. In α-B n P n , each phosphorus atom is doped into a boron atom, whereas B atoms form a B n unit. On the other hand, each boron atom in the β-phase was bonded to a phosphorus atom to make a fullerene-like cage structure. Besides, theoretical simulations determined that α-B n P n structures, especially α-B24P24, show superior oxidation resistance and also, both α-B n P n and β-B n P n exhibit better thermal stability; the upper limit temperature that structures can tolerance is 900 K. The electronic properties of new compounds illustrate a higher degree of absorption in the UV and visible-region with the absorption coefficient larger than 105 cm-1, which suggests a wide range of opportunities for advanced optoelectronic applications. The β-B n P n phase has suitable band alignments in the visible-light excitation region, which will produce enhanced photocatalytic activities. On the other hand, α-B n P n structures with modest band gap exhibit large second hyperpolarizability, which are anticipated to have excellent potential as second-order non-linear optical (NLO) materials.

Janus 2D titanium nitride halide TiNX0.5Y0.5 (X, Y = F, Cl, or Br, and X ≠ Y) monolayers with giant out-of-plane piezoelectricity and high carrier mobility

We have proposed a series of Janus 2D titanium nitride halide TiNX_0.5Y_0.5 (X, Y = F, Cl, or Br, and X ≠ Y) monolayers, which have considerable out-of-plane piezoelectricity and high carrier mobility.

Computational prediction of a novel 1D InSeI nanochain with high stability and promising wide-bandgap properties

Low-dimensional materials have aroused widespread interest for their novel and fascinating properties. Based on first-principles calculations, we predict the one-dimensional (1D) InSeI nanochains with van der Waals (vdW) interchain interactions, which could be exfoliated mechanically and kept at steady states at room temperature. Compared with bulk InSeI, the single nanochain InSeI has a larger direct bandgap of 3.15 eV. Its calculated carrier mobility is as high as 54.17 and 27.49 cm2 V-1 s-1 for holes and electrons, respectively, comparable with those of other 1D materials. In addition, a direct-to-indirect bandgap transition is implemented under a small applied strain (∼6%). More importantly, the nanochains are found to be promising candidates for optoelectronic devices since they possess a high absorption coefficient of ∼105 cm-1 in the ultraviolet region. The results thus pave a novel avenue for the applications of InSeI nanochains with excellent thermal stability in nanoelectronic and optoelectronic devices.