Infrared and Raman spectra of Bi2O2X and Bi2OX2 (X = S, Se, and Te) studied from first principles calculations

Mild chemistry synthesis of ultrathin Bi2O2S nanosheets exhibiting 2D-ferroelectricity at room temperature

Modern technology demands miniaturization of electronic components to build small, light, and portable devices. Hence, discovery and synthesis of new non-toxic, low cost, ultra-thin ferroelectric materials having potential applications in various electronic and optoelectronic devices are of paramount importance. However, achieving room-temperature ferroelectricity in two dimensional (2D) ultra-thin systems remains a major challenge as conventional three-dimensional ferroelectric materials lose their ferroelectricity when the thickness is brought down below a critical value owing to the depolarization field. Herein, we report room-temperature ferroelectricity in ultra-thin single-crystalline 2D nanosheets of Bi2O2S synthesized by a simple, rapid, and scalable solution-based soft chemistry method. The ferroelectric ground state of Bi2O2S nanosheets is confirmed by temperature-dependent dielectric measurements as well as piezoelectric force microscopy and spectroscopy. High resolution transmission electron microscopy analysis and density functional theory-based calculations suggest that the ferroelectricity in Bi2O2S nanosheets arises due to the local distortion of Bi2O2 layers, which destroys the local inversion symmetry of Bi2O2S.

Hidden Direct Bandgap of Bi2O2Se by Se Vacancy and Enhanced Direct Bandgap of Bismuth Oxide Overlayer

The Bi2O2Se surfaces are well-known to possess 50% Se vacancies, yet they have shown no in-gap states within the indirect bandgap (∼0.8 eV). We have found that the hidden in-gap states arising from the Se vacancies in a 2 × 1 pattern induce a reduced direct bandgap (∼0.5 eV). Such a reduced direct bandgap is responsible for the high electron mobility of Bi2O2Se. Moreover, the Bi oxide overlayers of the Bi thin films, formed through air exposure and annealing, unexpectedly exhibit a large direct bandgap (∼2.1 eV). The simplified fabrication of Bi oxide overlayers provides promise for improving Bi2O2Se electronic devices and enhancing photocatalytic activity.

Insight into the Isoreticularity of Li-MOFs for the Design of Low-Density Solid and Quasi-Solid Electrolytes

Isoreticularity in metal organic frameworks (MOFs) allows the design of the framework structure and tailoring the pore aperture at the molecular level. The optimal pore volume, long-range order of framework expansion, and crystallite size (grain size) could enable improving Li-ion conduction, thereby providing a unique opportunity to design high-performance solid and quasi-solid electrolytes. However, definitive understanding of the pore aperture, framework expansion, and crystallite size on the Li-ion conduction and its mechanism in MOFs remains at the exploratory stage. Among the different MOF subfamilies, Li-MOFs created by the isoreticular framework expansion using dicarboxylates of benzene, naphthalene, and biphenyl building blocks emerge as low-density porous solids with exceptional thermal stability to study the solid-state Li+ transport mechanisms. Herein, we report the subtle effect of the isoreticularity in Li-MOFs on the performance of solid and quasi-solid-state Li+ conduction, providing new insight into Li+ transport mechanisms in MOFs for the first time. Our experimental and computational results show that the reticular design on an isostructural extended framework structure with the optimal pore aperture and crystallite size can influence the Li+ conductivity, exhibiting comparable ionic conductivities to solid polymer electrolytes at room temperature. Aligning with the computational studies, our experimental absorption spectral traces of solid electrolytes prepared by encapsulating lithium salt (LiClO4) and the plasticizer (ethylene carbonate) with Li-MOFs confirm the participation of the free and bound states of Li+ in a pore filling-driven ion conduction mechanism. We postulate that porous channels of Li-MOFs aid free Li+ to move through the pores via a vehicle-type mechanism, in which the pore-filled plasticizer acts as a carrier for mobile Li+ while the framework's functional sites transport the bound state of Li+ via an ion hopping mechanism from one crystallite site to another. Our computational studies performed on the Li+ conduction pathway validated the postulated pore filling mechanism and confirmed the involvement of bridging complexes, formed by binding Li+ onto the framework's functional sites as well as to the pore-filled ethylene carbonates. The Li+ diffusion energy barrier profiles along with the respective conformational changes during the diffusion of Li+ in solid electrolytes prepared from Li-BDC MOF and Li-NDC MOF strongly support the cooperative movement of Li+ ions via ion hopping along the framework's edges and vehicle-type transfer, involving the pore-filled plasticizer. Our findings suggest that cooperative function of the optimal pore volume, framework expansion, and crystallite size play a unique role in Li-ion conduction, thereby providing design guidelines for the low-density solid and quasi-solid electrolytes.

Bi2O2Se-based CBRAM integrated artificial synapse

Integrating two-dimensional (2D) semiconducting materials into memristor structures has paved the way for emerging 2D materials to be employed in a vast field of memory applications. Bismuth oxyselenide (Bi2O2Se), a 2D material with high electron mobility, has attracted significant research interest owing to its great potential in various fields of advanced applications. Here, we explore the out-of-plane intrinsic switching behavior of few-layered Bi2O2Se via a cross point device for application in conductive bridge random access memory (CBRAM) and artificial synapses for neuromorphic computing. Via state-of-the-art methods, CVD-grown Bi2O2Se nanoplate is applied as a switching material (SM) in an Al/Cu/Bi2O2Se/Pd CBRAM structure. The device exhibits ∼90 consecutive DC cycles with a tight distribution of the SET/RESET voltages under a compliance current (CC) of 1 mA, a retention of over 10 ks, and multilevel switching characteristics showing four distinct states at Vread values of 0.1, 0.2, 0.25, and 0.3 V. Moreover, an artificial synapse is realized with potentiation and depression by modulating the conductance. The switching mechanism is explained via Cu migration through Bi2O2Se based on HRTEM analysis. The present structure shows potential for future integrated memory applications.

Visualizing Line Defects in non-van der Waals Bi2O2Se Using Raman Spectroscopy

Atomic-layered materials, such as high-quality bismuth oxychalcogenides, which are composed of oppositely charged alternate layers grown using chemical vapor deposition, have attracted considerable attention. Their physical properties are well-suited for high-speed, low-power-consumption optoelectronic devices, and the rapid determination of their crystallographic characteristics is crucial for scalability and integration. In this study, we introduce how the crystallographic structure and quality of such materials can be projected through Raman spectroscopy analysis. Frequency modes at ∼55, ∼78, ∼360, and ∼434 cm^-1 were detected, bearing out theoretical calculations from the literature. The low-frequency modes positioned at 55 and 78 cm^-1 were activated by structural defects, such as grain boundaries and O-rich edges in the Bi₂O₂Se crystals, accompanied by sensitivity to the excitation energy. Furthermore, the line defects at ∼55 cm^-1 exhibited a strong 2-fold polarization dependence, similar to graphene/graphite edges. Our results can help illuminate the mechanism for activating the Raman-active mode from the infrared active mode by defects, as well as the electronic structures of these two-dimensional layered materials. We also suggest that the nanoscale width line defects in Bi₂O₂Se can be visualized using Raman spectroscopy.

A DFT study of Se n Te n clusters

First principles calculations have been performed to study the characteristic properties of Se _n Te _n (n = 5-10) clusters. The present study reveals that the properties of these small clusters are consistent with the properties of Se-Te glassy systems. Several hundred equilibrium structures obtained from a genetic algorithm based USPEX code are relaxed to their minimum energy using the VASP code. Most of the lowest energy buckled ring-like structures are formed from Se-Te heteropolar bonds. Detailed structural analysis and distance energy plots unveil that many equilibrium structures are close in energy to their global minimum. The computed Raman and IR spectra show the dominance of Se-Te heteropolar bonds, consistent with earlier simulation and experimental findings in Se_1-x Te _x glass materials. Low frequency vibrational modes observed in small clusters are characteristic features of amorphous materials. Non-bonding orbitals (lone pair) are observed in the HOMO, whereas the LUMO is formed from purely antibonding orbitals. The dielectric functions corroborate the bonding mechanism and slightly polar nature of Se _n Te _n clusters. The energy loss and absorption coefficient indicate the presence of π-plasmons in the UV-visible region. Furthermore, it is ascertained that the use of a hybrid functional (B3LYP) does not affect the properties of small clusters appreciably, except causing a blue shift in the optical spectra. Hence, we find that the small clusters have bearing on the formation of glassy Se-Te systems.

Charge Transfer Properties of Heterostructures Formed by Bi2 O2 Se and Transition Metal Dichalcogenide Monolayers

Atomically thin bismuth oxyselenide (Bi₂ O₂ Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge-carrier mobility and good air stability. Recently, the development of Bi₂ O₂ Se-based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi₂ O₂ Se-based heterostructures have been widely studied, the interlayer charge transfer in these heterostructures remains elusive, despite its importance in harnessing their emergent functionalities. Here, a comprehensive experimental investigation on the interlayer charge transfer properties of two heterostructures formed by Bi₂ O₂ Se and representative transition metal dichalcogenides (namely, WS₂ /Bi₂ O₂ Se and MoS₂ /Bi₂ O₂ Se) is reported. Kelvin probe force microscopy is used to measure the work functions of the samples, which are further employed to establish type-II band alignment of both heterostructures. Photoluminescence quenching is observed in each heterostructure, suggesting high charge transfer efficiency. Time-resolved and layer-selective pump-probe measurements further prove the ultrafast interlayer charge transfer processes and formation of long-lived interlayer excitons. These results establish the feasibility of integrating 2D Bi₂ O₂ Se with other 2D semiconductors to fabricate heterostructures with novel charge transfer properties and provide insight for understanding the performance of optoelectronic devices based on such 2D heterostructures.

Pressure-Regulated Dynamic Stereochemical Role of Lone-Pair Electrons in Layered Bi2O2S

Lone-pair electrons (LPEs) ns² in subvalent 14 and 15 groups lead to highly anharmonic lattice and strong distortion polarization, which are responsible for the groups' outstanding thermoelectric and optoelectronic properties. However, their dynamic stereochemical role in structural and physical properties is still unclear. Here, by introducing pressure to tune the behavior of LPEs, we systematically investigate the lone-pair stereochemical role in a Bi₂O₂S. The gradually suppressed LPEs during compression show a nonlinear repulsive electrostatic force, resulting in two anisotropic structural transitions. An orthorhombic-to-tetragonal phase transition happens at 6.4 GPa, caused by the dynamic cation centering. This structural transformation effectively modulates the optoelectronic properties. Further compression beyond 13.2 GPa induces a 2D-to-3D structural transition due to the disappearance of the Bi-6s² LPEs. Therefore, the pressure-induced LPE reconfiguration dominates these anomalous variations of lattice, electronic, and optical properties. Our findings provide new insights into the materials optimization by regulating the characters of LPEs.

Electrical scattering mechanism evolution in un-doped and halogen-doped Bi2O2Se single crystals

Recently the layered oxide semiconductor Bi2O2Se was hotly explored for its ultrahigh mobility and ultrafast photo-response whose physical origins need to be further explored or elucidated. Here, we have grown halogen (Cl, Br, I) doped and un-doped Bi2O2Se single crystals by a melt-solidification method. Comparative electrical transport characterizations and detailed data-analysis substantiate that the electron-electron scattering is the major source of resistivity in un-doped Bi2O2Se crystals; however, in halogen-doped Bi2O2Se crystals, electron-electron scattering is only effective at low temperature (<60 K) and subsequently electron-phonon-interaction scattering is dominated to resistivity. Hall measurement and analysis show that electron concentration of halogen-doped Bi2O2Se (∼1020cm-3) is one-order higher than un-doped one (∼1019cm-3), but the carrier mobility of halogen-doped Bi2O2Se at 2 K (∼102cm2V-1s-1) is reduced by more than two orders than un-doped ones (∼104cm2V-1s-1). Three kinds of relaxation time (due to the impurity scattering, electron-electron scattering and electron-phonon scattering), calculated by linear-response theory and electron-/phonon-dispersion, are in agreement with experimental results quantitatively. The scattering mechanism evolution from sole electron-electron scattering (un-doped Bi2O2Se) to electron-phonon scattering (doped Bi2O2Se) at high temperature (>60 K) is attributed to the net effect of decreased screened Coulomb-interaction and increased Fermi energy in halogen-doped Bi2O2Se. This work may provide clues of physical origins of superior electrical/photoelectrical properties of Bi2O2Se.

Ultrathin Free-Standing Nanosheets of Bi2O2Se: Room Temperature Ferroelectricity in Self-Assembled Charged Layered Heterostructure

Ultrathin ferroelectric semiconductors with high charge carrier mobility are much coveted systems for the advancement of various electronic and optoelectronic devices. However, in traditional oxide ferroelectric insulators, the ferroelectric transition temperature decreases drastically with decreasing material thickness and ceases to exist below certain critical thickness owing to depolarizing fields. Herein, we show the emergence of an ordered ferroelectric ground state in ultrathin (∼2 nm) single crystalline nanosheets of Bi₂O₂Se at room temperature. Free-standing ferroelectric nanosheets, in which oppositely charged alternating layers are self-assembled together by electrostatic interactions, are synthesized by a simple, rapid, and scalable wet chemical procedure at room temperature. The existence of ferroelectricity in Bi₂O₂Se nanosheets is confirmed by dielectric measurements and piezoresponse force spectroscopy. The spontaneous orthorhombic distortion in the ultrathin nanosheets breaks the local inversion symmetry, thereby resulting in ferroelectricity. The local structural distortion and the formation of spontaneous dipole moment were directly probed by atomic resolution scanning transmission electron microscopy and density functional theory calculations.