P3HT-based visible-light organic photodetectors using PEI/PAA multilayers as a p-type buffer layer

Embedded Integration of Sb2Se3 Film by Low-Temperature Plasma-Assisted Chemical Vapor Reaction with Polycrystalline Si Transistor for High-Performance Flexible Visible-to-Near-Infrared Photodetector

Flexible optoelectronics have garnered considerable interest for applications such as optical communication, motion capture, biosignal detection, and night vision. Transition-metal dichalcogenides are widely used as flexible photodetectors owing to their outstanding electrical and optical properties and high flexibility. Herein, a two-dimensional (2D) Sb₂Se₃ film-based one transistor-one resistor (1T1R) flexible photodetector with high photosensing current and detection ranges from visible to near-infrared was developed. The flexible 1T1R was fabricated using an efficient field-effect transistor platform with the 2D Sb₂Se₃ film directly deposited on the sensing region using a low-temperature plasma-assisted chemical vapor reaction. The photodetector could achieve a maximum I_photo/I_dark of 15,000 under white light with a power density of 26 mW/cm², in which the photodetector showed quick rising and falling response times of 0.16 and 0.28 s, respectively. The 2D Sb₂Se₃ film exhibits broadband absorption in the visible and IR regions, yielding an excellent photoresponse under laser illumination with different wavelengths. To investigate the flexibility and stability of the 1T1R photodetector, the photoresponses were measured under different bending cycles and curvatures, which maintained its functions and exhibited high stability under convex and concave bending at a curvature radius of 20 mm.

NiOx nanoparticles obtained from hydrothermally treated NiC2O4 as an electron blocking layer for organic photodetectors

A room-temperature p-type NiO_x film synthesized from a NiC₂O₄ precursor via hydrothermal treatment is employed as an electron blocking layer (EBL) to fabricate organic photodetectors (OPDs). A simple and efficient calcine process at 375 °C in air decomposes the NiC₂O₄ particles into NiO_x, removes organic components and crystal water, and releases CO₂ gas. Our experimental results indicate that this gaseous by-product prevents the agglomeration of NiO_x, which yields smaller nanoparticles (5-10 nm). The formation of an EBL at room temperature improves device performance. After optimization, the performance parameters obtained, including dark current density, responsivity, specific detectivity and response, are 1.13 × 10^-7 A cm^-2, 0.74 A W^-1, 3.86 × 10¹² Jones, and 0.5/8 ms, respectively. Additionally, the dark current is reduced by more than an order of magnitude after the insertion of the NiO_x layer. The proposed simple and easy method for producing an EBL could be beneficial for the commercial low-temperature and large-area preparation of OPDs.