Z-scheme Al2SeTe/GaSe and Al2SeTe/InS van der Waals heterostructures for photocatalytic water splitting

Designing Z-scheme van der Waals (vdW) heterostructured photocatalysts is a promising strategy for developing highly efficient overall water splitting. Herein, by employing density functional theory calculations, we systematically investigated the stability, electronic structures, photocatalytic and optical properties of Al2SeTe, GaSe, and InS monolayers and their corresponding vdW heterostructures. Interestingly, electronic structures show that all vdW heterostructures have direct band gaps, which is conducive to the transition of electrons from the valence band to the conduction band. Notably, Al2TeSe/GaSe and Al2TeSe/InS vdW heterostructures possess large overpotentials for Z-scheme photocatalytic water splitting, as proved by the results of band edge positions and band structure bending. Moreover, these vdW heterostructures exhibit good optical absorption in ultraviolet and visible light regions. We believe that our findings will open a new avenue for the modulation and development of Al2TeSe/GaSe and Al2TeSe/InS vdW heterostructures for photocatalytic water splitting.

Enhanced visible-light-driven photocatalytic activity in SiPGaS/arsenene-based van der Waals heterostructures

Van der Waals heterostructures (vdWHs) showcase robust and tunable light-matter interactions, establishing an intriguing realm for investigating atomic-scale photocatalytic properties. Here, we employ ab initio methods to study the photocatalytic and optical properties of semiconducting SiPGaS/arsenene-based vdWHs with a type-II band alignment. Across the heterointerfaces, there exists significant built-in electric fields and large potential drop, in turn facilitating the spatial separation of photo-generated electron-hole pairs. These vdWHs further possess high carrier mobility in the order of 102 cm2V⁻1S⁻1, which combining with appropriate band edge positions, endow the vdWHs an absorption coefficient of ∼10⁵ cm⁻1 to harvest a maximal portion of the solar spectrum for visible-light-driven photocatalytic applications. Our findings also reveal transition of the type-II band alignment in a type-III configuration via compressive strain for tunneling field-effect transistor application. Furthermore, both types of vdWHs exhibit enhanced suitability for photocatalysis under conditions with a pH of 2.

Theoretical prediction of a type-II BP/SiH heterostructure for high-efficiency electronic devices

The generation of layered heterostructures from a combination of two or more different two-dimensional (2D) materials is considered as a powerful strategy to modify the electronic properties of 2D materials and enhance their performance in devices. Herein, using first-principles calculations, we systematically study the electronic properties and the band alignment in a heterostructure formed from 2D boron phosphide (BP) and silicane (SiH) monolayers. The BP/SiH heterostructure is structurally and mechanically stable in the ground state. The generation of the BP/SiH heterostructure leads to a reduction in the band gap, thus enhancing the optical absorption coefficient compared to the constituent BP and SiH monolayers. In addition, the BP/SiH heterostructure has a high carrier mobility of 3.2 × 10⁴ cm² V^-1 s^-1. Furthermore, the combined BP/SiH heterostructure gives rise to the formation of a type-II band alignment, inhibiting the recombination of the photogenerated carriers. The electronic properties and band alignment of the BP/SiH heterostructure can be tuned by an applied external electric field, which causes a reduction in the band gap and leads to the transition of the band alignment from type-II to type-I. Our findings could act as theoretical guidance for the use of the BP/SiH heterostructure in the design of high-efficiency nanodevices.

Two-dimensional SiC/AlN based type-II van der Waals heterobilayer as a promising photocatalyst for overall water disassociation

Two-dimensional (2D) van der Waals (vdW) heterostructures made by vertical assembling of two different layers have drawn immense attention in the photocatalytic water disassociation process. Herein, we suggest a novel 2D/2D vdW heterobilayer consisting of silicon carbide (SiC) and aluminum nitride (AlN) as an exciting photocatalyst for solar-to-hydrogen conversion reactions using first-principles calculations. Notably, the heterostructure presents an inherent type-II band orientation wherein the photogenic holes and electrons are spatially separated in the SiC layer and the AlN layer, respectively. Our results indicate that the SiC/AlN heterostructure occupies a suitable band-gap of 2.97 eV which straddles the kinetic overpotentials of the hydrogen production reaction and oxygen production reaction. Importantly, the built-in electric field at the interface created by substantial charge transfer prohibits carrier recombination and further improves the photocatalytic performance. The heterostructure has an ample absorption profile ranging from the ultraviolet to the near-infrared regime, while the intensity of the absorption reaches up to 2.16 × 10⁵ cm^-1. In addition, external strain modulates the optical absorption of the heterostructure effectively. This work provides an intriguing insight into the important features of the SiC/AlN heterostructure and renders useful information on the experimental design of a novel vdW heterostructure for solar energy-driven water disassociation with superior efficiency.

Efficient Prevention of Aspergillus flavus Spores Spread in Air Using Plasmonic Ag-AgCl/α-Fe2O3 under Visible Light Irradiation

Aspergillus flavus is a kind of widespread fungi that can produce carcinogenic, teratogenic, and mutagenic secondary metabolites known as aflatoxins. Aspergillus flavus mainly spread through the means of fungal spores in air, thus preventing the spores spread is an effective strategy to control aflatoxins contamination from source. Herein, a rapid and efficient control way to prevent the spread of Aspergillus flavus spores in air was demonstrated. Ag-AgCl nanoparticles were combined with tetrahedral α-Fe₂O₃ to form plasmonic composites that presented 93.65 ± 1.53% prevention rate of Aspergillus flavus spores under 50 min visible light irradiation. The efficient activity was attributed to the synergy effect of Ag including intrinsic disinfection, electron sink, and localized surface plasmon resonance effect, which were proven by photoelectric characterization, density functional theory, and finite difference time domain methods. The calculated work functions of α-Fe₂O₃, Ag, and AgCl were 3.71, 4.52, and 5.38 eV, respectively, which could accelerate photoinduced carrier transfer through Ag during photoreaction. Moreover, it was found that the intrinsic disinfection of Ag and hydroxyl radical from photocatalytic reaction were the main factors to the prevention of Aspergillus flavus spores, which resulted in the destruction of spore structure and the leakage of intracellular protein with 62.15 ± 2.63 μg mL^-1. Most important, it was proven that the composites also showed high activity (90.52 ± 1.26%) to prevent Aspergillus flavus spore spread in the storage process of peanuts. These findings not only provided useful information for an efficient and potential strategy to prevent Aspergillus flavus contamination but also could be as a reference in toxic fungi control.

Tunability of the electronic properties and contact types of the silicane/MoSi2N4 heterostructure under an electric field

Stacking different two-dimensional materials to generate a vertical heterostructure has been considered a promising way to obtain the desired properties and to improve the device performance.

Electric field tunability of the electronic properties and contact types in the MoS2/SiH heterostructure

The generation of layered heterostructures with type-II band alignment is considered to be an effective tool for the design and fabrication of a highly efficient photocatalyst. In this work, we design a novel type-II MoS₂/SiH HTS and investigate its atomic structure, electronic properties and contact types. In the ground state, the MoS₂/SiH HTS is proved to be structurally and mechanically stable. The MoS₂/SiH HTS generates type-II band alignment with separation of the photogenerated carriers. Both the electronic properties and contact type of the MoS₂/SiH HTS can be modulated by an external electric field. The application of a negative electric field leads to a transformation from type-II to type-I band alignment. While the application of a positive electric field gives rise to a transition from semiconductor to metal in the MoS₂/SiH HTS. These results could provide useful information for the design and fabrication of photoelectric devices on the MoS₂/SiH HTS.

The generation of layered heterostructures with type-II band alignment is considered to be an effective tool for the design and fabrication of a highly efficient photocatalyst.

First principles prediction of electronic, mechanical, transport and optical properties of the silicane/Ga2SSe heterostructure

In this work, we investigated the electronic structure, and mechanical, transport and optical properties of the van der Waals heterostructure formed from silicane (SiH) and Janus Ga₂SSe monolayers using first-principles prediction. The out-of-plane symmetry in the Janus Ga₂SSe monolayer leads to the formation of two different types of Ga₂SSe/SiH heterostructure, namely SGa₂Se/SiH and SeGa₂S/SiH stacking patterns. All stacking patterns of the SiH/Ga₂SSe heterostructure are thermodynamically, mechanically and energetically stable at room temperature. Furthermore, the generation of the SiH/Ga₂SSe heterostructure gives rise to a reduction in the band gap, demonstrating that the electrons move faster from the valence bands to the conduction bands. The SiH/Ga₂SSe heterostructure is a semiconductor with a direct band gap of about 0.68 or 0.95 eV, depending on the stacking pattern. The SiH/Ga₂SSe heterostructure forms type-II band alignment for all stacking patterns, indicating that the photogenerated carriers are separated effectively, thus enhancing the photocatalytic performance. Moreover, the carrier mobilities for electrons and holes of the Ga₂SSe/SiH heterostructure are higher than those of the constituent SiH and Ga₂SSe monolayers in both the x and y directions, suggesting that the performances of electronic devices based on the Ga₂SSe/SiH heterostructure would be excellent and reliable. The formation of the Ga₂SSe/SiH heterostructure also gives rise to an enhancement of the absorption coefficient in both the visible and ultraviolet regions. Our findings could give valuable guidance for the design of high-efficiency devices based on the SiH/Ga₂SSe heterostructure.

In this work, we investigated the electronic structure, and mechanical, transport and optical properties of the van der Waals heterostructure formed from silicane (SiH) and Janus Ga₂SSe monolayers using first-principles prediction.

Emergence of metallic states at 2D MoSSe/GaAs Janus interface: a DFT study

The stability and the electronic properties of two dimensional (2D) GaAs/MoSSe Janus interfaces were investigated using first principles density functional theory calculations. The effect of different atomic terminations on the interface stability, electronic properties and charge transfer at the interfaces were analyzed. Metallic states are formed at the stable MoSSe/GaAs interface owing to the synergistic effect of the presence of 2D occupied antibonding states in MoSSe and the band alignment at the interface. The non-symmetric structure of MoSSe Janus material turns out to play a key role to control the electronic properties of the stable Janus interface, which will be crucial deciding factor for practical applications.

A novel design of SiH/CeO2(111) van der Waals type-II heterojunction for water splitting

Searching for economical low-dimensional materials to construct the highly efficient type-II heterojunction photocatalysts for splitting water into hydrogen is very strategic. In this study, using the first-principles calculations, we construct a novel SiH/CeO2(111) type-II heterojunction with a very small lattice mismatch of less than 1%. Based on AIMD simulation and phonon dispersion calculations, the SiH/CeO2(111) heterojunction reveals sufficient stability, and is easy to synthesize. Due to the vdW interaction between SiH and CeO2(111) components, electron and hole accumulation regions form at the heterojunction interface, which is very conducive to the separation of photoexcited electron-hole pairs. Besides, the SiH/CeO2(111) heterojunction has good visible light response, and even a strong absorption peak of up to 8.7 × 105 cm-1 in the high-energy visible region. More importantly, the SiH/CeO2(111) heterojunction exhibits good OER and HER performance because its oxidation and reduction potentials well meet the requirements of water splitting. Consequently, SiH/CeO2(111) is a potential photocatalyst for splitting water to hydrogen.

PtSe2/SiH van der Waals type-II heterostructure: a high efficiency photocatalyst for water splitting

PtSe₂/SiH type-II van der Waals heterostructure is a highly efficient photocatalyst for water splitting in visible light.