Indium electrodeposition from indium(iii) methanesulfonate in DMSO

Scalable Electrodeposition of Liquid Metal from an Acetonitrile-Based Electrolyte for Highly Integrated Stretchable Electronics

The advancement of highly integrated stretchable electronics requires the development of scalable sub-micrometer conductor patterning. Eutectic gallium indium (EGaIn) is an attractive conductor for stretchable electronics, as its liquid metallic character grants it high electrical conductivity upon deformation. However, its high surface tension makes its patterning with sub-micrometer resolution challenging. In this work, this limitation is overcome by way of the electrodeposition of EGaIn. A non-aqueous acetonitrile-based electrolyte that exhibits high electrochemical stability and chemical orthogonality is used. The electrodeposited material leads to low-resistance lines that remain stable upon (repeated) stretching to a 100% strain. Because electrodeposition benefits from the resolution of mature nanofabrication methods used to pattern the base metal, the proposed "bottom-up" approach achieves a record-high density integration of EGaIn regular lines of 300 nm half-pitch on an elastomer substrate by plating on a gold seed layer prepatterned by nanoimprinting. Moreover, vertical integration is enabled by filling high-aspect-ratio vias. This capability is conceptualized by the fabrication of an omnidirectionally stretchable 3D electronic circuit, and demonstrates a soft-electronic analog of the stablished damascene process used to fabricate microchip interconnects. Overall, this work proposes a simple route to address the challenge of metallization in highly integrated (3D) stretchable electronics.

Electrodeposition of Indium from an Ionic Liquid Investigated by In Situ Electrochemical XPS

The electrochemical behavior and electrodeposition of indium in an electrolyte composed of 0.1 mol/L InCl3 in 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide ([Py1,4]TFSI) on a gold electrode were investigated. The cyclic voltammogram revealed several reduction and oxidation peaks, indicating a complex electrochemical behavior. In the cathodic regime, with the formation of an In-Au alloy, the reduction of In(III) to In(I) and of In(I) to In(0) takes place. In situ electrochemical X-ray photoelectron spectroscopy (XPS) was employed to investigate the reduction process by monitoring the oxidation states of the components during the cathodic polarization of 0.1 mol/L InCl3/[Py1,4]TFSI on a gold working electrode under ultra-high vacuum (UHV) conditions. The core electron binding energies of the IL components (C 1s, O 1s, F 1s, N 1s, and S 2p) shift almost linearly to more negative values as a function of the applied cell voltage. At −2.0 V versus Pt-quasi reference, In(I) was identified as the intermediate species during the reduction process. In the anodic regime, a strong increase in the pressure in the XPS chamber was recorded at a cell voltage of more than −0.5 V versus Pt quasi reference, which indicated, in addition to the oxidation reactions of In species, that the oxidation of Cl− occurs. Ex situ XPS and XRD results revealed the formation of metallic In and of an In-Au alloy.