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Ding YM, Huo Y, Fang G, Yan L, Wu Y, Zhou L. Two-dimensional half-metals MSi 2N 4 (M = Al, Ga, In, Tl) with intrinsic p-type ferromagnetism and ultrawide bandgaps. Phys Chem Chem Phys 2024; 26:13327-13334. [PMID: 38639877 DOI: 10.1039/d3cp05940e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Intrinsic half-metallic nanomaterials with 100% spin polarization are highly demanded for next-generation spintronic devices. Here, by using first-principles calculations, we have designed a class of new two-dimensional (2D) p-type half-metals, MSi2N4 (M = Al, Ga, In and Tl), which show high mechanical, thermal and dynamic stabilities. MSi2N4 not only have ultrawide electronic bandgaps for spin-up channels in the range of 4.05 to 6.82 eV but also have large half-metallic gaps in the range of 0.75 to 1.47 eV, which are large enough to prevent the spin-flip transition. The calculated magnetic moment is 1 μB per cell, resulting from polarized N1-px/py orbitals. Moreover, MSi2N4 possess robust long-range ferromagnetic orderings with Curie temperatures in the range of 35-140 K, originating from the interplay of N1-M-N1 superexchange interactions. Furthermore, spin dependent electronic transport calculations reveal 100% spin polarization. Our results highlight new promising 2D ferromagnetic half-metals toward future spintronic applications.
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Affiliation(s)
- Yi-Min Ding
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
| | - Yiqi Huo
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Gaojing Fang
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Luo Yan
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yu Wu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
| | - Liujiang Zhou
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
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Zhang X, Wang X, He T, Wang L, Yu WW, Liu Y, Liu G, Cheng Z. Magnetic topological materials in two-dimensional: theory, material realization and application prospects. Sci Bull (Beijing) 2023; 68:2639-2657. [PMID: 37734982 DOI: 10.1016/j.scib.2023.09.004] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Revised: 07/12/2023] [Accepted: 08/23/2023] [Indexed: 09/23/2023]
Abstract
Two-dimensional (2D) magnetism and nontrivial band topology are both areas of research that are currently receiving significant attention in the study of 2D materials. Recently, a novel class of materials has emerged, known as 2D magnetic topological materials, which elegantly combine 2D magnetism and nontrivial topology. This field has garnered increasing interest, especially due to the emergence of several novel magnetic topological states that have been generalized into the 2D scale. These states include antiferromagnetic topological insulators/semimetals, second-order topological insulators, and topological half-metals. Despite the rapid advancements in this emerging research field in recent years, there have been few comprehensive summaries of the state-of-the-art progress. Therefore, this review aims to provide a thorough analysis of current progress on 2D magnetic topological materials. We cover various 2D magnetic topological insulators, a range of 2D magnetic topological semimetals, and the novel 2D topological half-metals, systematically analyzing the basic topological theory, the course of development, the material realization, and potential applications. Finally, we discuss the challenges and prospects for 2D magnetic topological materials, highlighting the potential for future breakthroughs in this exciting field.
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Affiliation(s)
- Xiaoming Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Xiaotian Wang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Tingli He
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Lirong Wang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Wei-Wang Yu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Ying Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Guodong Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
| | - Zhenxiang Cheng
- Institute for Superconducting and Electronic Materials (ISEM), University of Wollongong, Wollongong 2500, Australia.
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Li C, Li M, Li Y, He T, Liu Y, Zhang X, Dai X, Liu G. Two-dimensional half-metallicity and fully spin-polarized topological fermions in monolayer EuOBr. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:264002. [PMID: 36990099 DOI: 10.1088/1361-648x/acc8b2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2023] [Accepted: 03/29/2023] [Indexed: 06/19/2023]
Abstract
Two-dimensional (2D) half-metal and topological states have been the current research focus in condensed matter physics. Herein, we report a novel 2D material named EuOBr monolayer, which can simultaneously show 2D half-metal and topological fermions. This material shows a metallic state in the spin-up channel but a large insulating gap of 4.38 eV in the spin-down channel. In the conducting spin channel, the EuOBr monolayer shows the coexistence of Weyl points and nodal-lines near the Fermi level. These nodal-lines are classified by type-I, hybrid, closed, and open nodal-lines. The symmetry analysis suggests these nodal-lines are protected by the mirror symmetry, which cannot be broken even spin-orbit coupling is included because the ground magnetization direction in the material is out-of-plane [001]. The topological fermions in the EuOBr monolayer are fully spin-polarized, which can be meaningful for future applications in topological spintronic nano-devices.
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Affiliation(s)
- Chenyao Li
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
| | - Minghang Li
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
| | - Yefeng Li
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
| | - Tingli He
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
| | - Ying Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
| | - Xiaoming Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
| | - Xuefang Dai
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
| | - Guodong Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
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Zhang K, Chen M, Wang D, Lv H, Wu X, Yang J. Nodal-loop half metallicity in a two-dimensional Fe 4N 2 pentagon crystal with room-temperature ferromagnetism. NANOSCALE 2021; 13:19493-19499. [PMID: 34796890 DOI: 10.1039/d1nr06033c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials with fully spin-polarized nodal-loop band crossing are a class of topological magnetic materials, holding promise for high-speed low-dissipation spintronic devices. Recently, several 2D nodal-loop materials have been reported in theory and experiment, such as Cu2Si, Be2C, CuSe, and Cr2S3 monolayers, adopting triangular, tetragonal, hexagonal, or complex lattices. However, a 2D nodal-loop half metal with room-temperature magnetism is still less reported. Here, we report that the 2D Fe4N2 pentagon crystal is a nodal-loop half metal with room-temperature magnetism over 428 K and a global minimum structure via first-principles calculations and global structure search. The Dirac nodal lines in Fe4N2 form a flat nodal loop at the Fermi level and a spin-polarized type-II nodal-loop above the Fermi level, which are protected by mirror symmetry. Our results establish Fe4N2 as a platform to obtain nodal-loop half metallicity in the 2D pentagon lattice and provide opportunities to build high-speed low-dissipation spintronics in the nanoscale.
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Affiliation(s)
- Kai Zhang
- School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Hefei National Laboratory of Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Minglong Chen
- School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China.
| | - Dayong Wang
- School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China.
| | - Haifeng Lv
- School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Hefei National Laboratory of Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiaojun Wu
- School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Hefei National Laboratory of Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jinlong Yang
- School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China.
- Hefei National Laboratory of Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
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Pang ZX, Hu XK, Li P. A novel topological crystalline insulator in planar pentacoordinate OsS2 monolayer. Chem Phys 2021. [DOI: 10.1016/j.chemphys.2021.111199] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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