The effect of different covalent bond connections and doping on transport properties of planar graphene/MoS2/graphene heterojunctions

Electron Transport Properties of Graphene/WS2 Van Der Waals Heterojunctions

Van der Waals heterojunctions of two-dimensional atomic crystals are widely used to build functional devices due to their excellent optoelectronic properties, which are attracting more and more attention, and various methods have been developed to study their structure and properties. Here, density functional theory combined with the nonequilibrium Green's function technique has been used to calculate the transport properties of graphene/WS2 heterojunctions. It is observed that the formation of heterojunctions does not lead to the opening of the Dirac point of graphene. Instead, the respective band structures of both graphene and WS2 are preserved. Therefore, the heterojunction follows a unique Ohm's law at low bias voltages, despite the presence of a certain rotation angle between the two surfaces within the heterojunction. The transmission spectra, the density of states, and the transmission eigenstate are used to investigate the origin and mechanism of unique linear I-V characteristics. This study provides a theoretical framework for designing mixed-dimensional heterojunction nanoelectronic devices.

Influence of the interface structure and strain on the rectification performance of lateral MoS2/graphene heterostructure devices

We systematically study the influence of interface configuration and strain on the electronic and transport properties of lateral MoS₂/graphene heterostructures by first-principles calculations and quantum transport simulations. We first identify the favorable heterostructure configurations with C-S and/or C-Mo bonds at the interfaces. Strain can be applied to graphene or MoS₂ and would not change the relative stabilities of different heterostructures. Band alignment calculations show that all the lateral heterostructures have n-type Schottky contacts. The current-voltage characteristics of the lateral MoS₂/graphene heterostructure diodes exhibit good rectification performance. Too strong and too weak interface interactions do not benefit electronic transport. The MoS₂/graphene heterostructures with moderate C-S bonds at the interface have larger currents through the junctions than those with C-Mo bonds at the interface. The maximal rectification ratio of the lateral diode with strain applied to MoS₂ can reach up to 10⁵. With strain applied to graphene, the currents through the heterostructures can increase by 1-2 orders of magnitude due to the reduced Schottky barrier heights at the interface, but the rectification ratio is reduced with a maximal value of 10⁴. Our calculations can serve as a theoretical guide to design rectifier and diode devices based on two-dimensional lateral heterostructures.

Heteroatoms (Si, B, N, and P) doped 2D monolayer MoS2 for NH3 gas detection

2D transition metal dichalcogenide MoS₂ monolayer quantum dots (MoS₂-QD) and their doped boron (B@MoS₂-QD), nitrogen (N@MoS₂-QD), phosphorus (P@MoS₂-QD), and silicon (Si@MoS₂-QD) surfaces have been theoretically investigated using density functional theory (DFT) computation to understand their mechanistic sensing ability, such as conductivity, selectivity, and sensitivity toward NH₃ gas. The results from electronic properties showed that P@MoS₂-QD had the lowest energy gap, which indicated an increase in electrical conductivity and better adsorption behavior. By carrying out comparative adsorption studies using m062-X, ωB97XD, B3LYP, and PBE0 methods at the 6-311G++(d,p) level of theory, the most negative values were observed from ωB97XD for the P@MoS₂-QD surface, signifying the preferred chemisorption surface for NH₃ detection. The mechanistic studies provided in this study also indicate that the P@MoS₂-QD dopant is a promising sensing material for monitoring ammonia gas in the real world. We hope this research work will provide informative knowledge for experimental researchers to realize the potential of MoS₂ dopants, specifically the P@MoS₂-QD surface, as a promising candidate for sensors to detect gas.

2D transition metal dichalcogenide MoS₂ monolayer quantum dots (MoS₂-QD) and their doped boron (B@MoS₂-QD), nitrogen (N@MoS₂-QD), phosphorus (P@MoS₂-QD), and silicon (Si@MoS₂-QD) counterparts are proposed as selective sensors for NH₃ gas.

Photoinduced Anomalous Electron Transfer Dynamics at a Lateral MoS2-Graphene Covalent Junction

Photoinduced charge separation significantly affects the optoelectronic performance of the lateral MoS₂-graphene junctions. Generally, an adiabatic mechanism governs electron transfer (ET) at a chemically binding interface. Counterintuitively, we demonstrate, using nonadiabatic (NA) molecular dynamics, that an NA mechanism dominates the ET from MoS₂ to graphene in the lateral MoS₂-graphene covalent junction. The anomalous ET mechanism arising from the built-in electric field formed at the interface that decreases the donor-acceptor interaction by driving electrons and holes moving to opposite directions. Driven by both graphene and MoS₂ vibrations, the photoexcited electrons on MoS₂ rapidly transfer into graphene by the NA mechanism within 200 fs, which is faster than electron-phonon energy relaxation and ensures that "hot" electrons can be successfully extracted before they cool and lose energy to heat. The study establishes a mechanistic understanding of the complex charge-phonon dynamics in the lateral MoS₂-graphene junctions that are key to optoelectronic and photovoltaic applications.