Synergistic vacancy defects and mechanical strain for the modulation of the mechanical, electronic and optical properties of monolayer tungsten disulfide

Large-Scale Analysis of Defects in Atomically Thin Semiconductors using Hyperspectral Line Imaging

Point defects play a crucial role in determining the properties of atomically thin semiconductors. This work demonstrates the controlled formation of different types of defects and their comprehensive optical characterization using hyperspectral line imaging (HSLI). Distinct optical responses are observed in monolayer semiconductors grown under different stoichiometries using metal-organic chemical vapor deposition. HSLI enables the simultaneous measurement of 400 spectra, allowing for statistical analysis of optical signatures at close to a centimeter scale. The study discovers that chalcogen-rich samples exhibit remarkable optical uniformity due to reduced precursor accumulation compared to the metal-rich case. The utilization of HSLI as a facile and reliable characterization tool pushes the boundaries of potential applications for atomically thin semiconductors in future devices.

Vacancy impacts on electronic and mechanical properties of MX2 (M = Mo, W and X = S, Se) monolayers

Monolayers of transition metal dichalcogenides (TMD) exhibit excellent mechanical and electrical characteristics. Previous studies have shown that vacancies are frequently created during the synthesis, which can alter the physicochemical characteristics of TMDs. Even though the properties of pristine TMD structures are well studied, the effects of vacancies on the electrical and mechanical properties have received far less attention. In this paper, we applied first-principles density functional theory (DFT) to comparatively investigate the properties of defective TMD monolayers including molybdenum disulfide (MoS₂), molybdenum diselenide (MoSe₂), tungsten disulfide (WS₂), and tungsten diselenide (WSe₂). The impacts of six types of anion or metal complex vacancies were studied. According to our findings, the electronic and mechanical properties are slightly impacted by anion vacancy defects. In contrast, vacancies in metal complexes considerably affect their electronic and mechanical properties. Additionally, the mechanical properties of TMDs are significantly influenced by both their structural phases and anions. Specifically, defective diselenides become more mechanically unstable due to the comparatively poor bonding strength between Se and metal based on the analysis of the crystal orbital Hamilton population (COHP). The outcomes of this study may provide the theoretical knowledge base to boost more applications of the TMD systems through defect engineering.

Interfacial Reaction and Diffusion at the One-Dimensional Interface of Two-Dimensional PtSe2

Two-dimensional (2D) PtSe₂ has potential applications in near-infrared optoelectronics because its band gap can be tuned by varying the layer thickness. There are several different platinum-selenide phases with different stoichiometries that result from high-temperature processing. In this report, we use in situ scanning/transmission electron microscopy (STEM) to investigate high-temperature phase transitions in 2D PtSe₂ and observe interfacial reactions as well as the Kirkendall effect. The 2D nature of PtSe₂ plays a key role in the unique one-dimensional interfaces that result during the formation of Se-poor phases (PtSe and PtSe_1-x) at the edges of the PtSe₂ crystals. The activation energy extracted for this formation suggests that the process is mediated by Se vacancies, as evidenced by the large strain variations in the material made via 4D STEM measurements. The observation of the Kirkendall effect in a 2D material suggests routes to engineer 1D edge chemistry for contact engineering in device applications.

Strains Induced Magnetic Hysteresis in MoS2 and WS2 Monolayers with Symmetric Double Sulfur Vacancy Defects

It has been found that magnetism in two-dimensional (2D) transition metal dichalco-genides can be realized by properly introducing vacancies and applying strains. However, not a work has clearly clarified the...