Polarization detection in deep-ultraviolet light with monoclinic gallium oxide nanobelts

Border Trap-Enhanced Ga2O3 Nonvolatile Optoelectronic Memory

Nonvolatile deep ultraviolet optoelectronic memory (DUVOEM) holds immense potential in cyberphysical systems, offering high storage density, swift conversion speeds, and robust data security. However, the current data retention time, typically limited to milliseconds or hours, mostly underperforms the expectations of years as a nonvolatile memory. In this work, we present a β-Ga2O3/SiO2/Si thin-film transistor DUVOEM with an enhanced data storage capability via trapping and releasing of photogenerated holes in border traps. Specifically, the photogenerated holes in β-Ga2O3 will tunnel through SiO2 and be captured by these defects. Innovatively, the much slower holes' release process from the border traps has been harnessed in developing outstanding nonvolatile optoelectronic memories. Rapid writing and erasing speeds, long-time retention (≥10 years), and high robustness demonstrate its practical application values. This study not only provides a novel strategy for nonvolatile DUVOEM but also provides an instance of functionalizing β-Ga2O3 memory with common defects in Si technology.

Unravelling the surface structure of β-Ga2O3 (100)

The present work is on a comprehensive surface atomic structure investigation of β-Ga2O3 (100). The β-Ga2O3 single crystal was studied by a structural model system in the simulations and in situ characterization via X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED) and X-ray photoelectron diffraction (XPD) allowed for probing the outermost layers' properties. In situ XPD characterization allows for the collection of valuable element-specific short-range information from the β-Ga2O3 surface, and the results were compared to a systematic and precise multiple scattering simulation approach. The experiments, characterizations, and simulations indicated strong evidence of considerable structural variations in the interatomic layer's distances. Such atomic displacement could clarify the electronic phenomena observed in theoretical studies. The comparison between experimental and theoretical XPD results involving multiple scattering calculations indicated that the β-Ga2O3 surface has two possible terminations. The best fits to the photoelectron diffraction curves are used to calculate the interplanar relaxation in the first five atomic layers. The results show good agreement with previous density functional theory calculations, establishing XPD as a useful tool for probing the atomic structure of oxide surfaces.

Advances in Two-Dimensional Materials for Optoelectronics Applications

The past one and a half decades have witnessed the tremendous progress of two-dimensional (2D) crystals, including graphene, transition-metal dichalcogenides, black phosphorus, MXenes, hexagonal boron nitride, etc., in a variety of fields. The key to their success is their unique structural, electrical, mechanical and optical properties. Herein, this paper gives a comprehensive summary on the recent advances in 2D materials for optoelectronic approaches with the emphasis on the morphology and structure, optical properties, synthesis methods, as well as detailed optoelectronic applications. Additionally, the challenges and perspectives in the current development of 2D materials are also summarized and indicated. Therefore, this review can provide a reference for further explorations and innovations of 2D material-based optoelectronics devices.

In Situ Fabrication of PdSe2/GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio

Polarization-sensitive ultraviolet (UV) photodetection is of great technological importance for both civilian and military applications. Two-dimensional (2D) group-10 transition-metal dichalcogenides (TMDs), especially palladium diselenide (PdSe₂), are promising candidates for polarized photodetection due to their low-symmetric crystal structure. However, the lack of an efficient heterostructure severely restricts their applications in UV-polarized photodetection. Here, we develop a PdSe₂/GaN Schottky junction by in situ van der Waals growth for highly polarization-sensitive UV photodetection. Owing to the high-quality junction, the device exhibits an appealing UV detection performance in terms of a large responsivity of 249.9 mA/W, a high specific detectivity, and a fast response speed. More importantly, thanks to the puckered structure of the PdSe₂ layer, the device is highly sensitive to polarized UV light with a large dichroic ratio up to 4.5, which is among the highest for 2D TMD material-based UV polarization-sensitive photodetectors. These findings further enable the demonstration of the outstanding polarized UV imaging capability of the Schottky junction, as well as its utility as an optical receiver for secure UV optical communication. Our work offers a strategy to fabricate the PdSe₂-based heterostructure for high-performance polarization-sensitive UV photodetection.

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investigated 2D UWBG semiconductors are metal oxides, metal chalcogenides, metal halides, and metal nitrides. This paper provides an up-to-date review of recent research progress on new 2D UWBG semiconductor materials and novel physical properties. The widespread applications, i.e., transistors, photodetector, touch screen, and inverter are summarized, which employ 2D UWBG semiconductors as either a passive or active layer. Finally, the existing challenges and opportunities of the enticing class of 2D UWBG semiconductors are highlighted.

Solution processed transparent anatase TiO2 nanoparticles/MoO3 nanostructures heterojunction: high performance self-powered UV detector for low-power and low-light applications

Ultraviolet (UV) photodetectors are considered as the major players in energy saving technology of the future. Efforts are needed to further develop such devices, which are capable of operating efficiently at low driving potential as well as with weak illumination. Herein, we report an all-oxide, highly transparent TiO2/MoO3 bilayer film, with nanoparticulate anatase TiO2 as the platform, fabricated by a simple solution based method and demonstrate its use in UV photodetection. Photoconductivity measurement with 352 nm light reveals the self-powered UV detection capability of the device due to the built-in potential at the bilayer interface. The device exhibits a high photoresponsivity (46.05 A W-1), detectivity (2.84 × 1012 Jones) and EQE (16 223%) even with a weak illumination of 76 μW cm-2, at a low bias of only -1 V. The self-powered performance of the bilayer device is comparable to that of commercial Si photodetectors as well as other such UV detectors reported based on metal oxide heterojunctions. The improved and faster photoresponse shown by the device is due to the formation of an effective heterojunction, as evidenced by XPS, electrochemical and I-V studies. It can be further attributed to the better charge transport through the densely aligned nanostructures, reduced recombination and the better mobility of anatase TiO2 nanoparticles. The performance is best-in-class and proves the potential of the transparent heterojunction to be used in highly responsive, self-powered UV detectors for low bias, low light applications.