Modulating the thermal and structural stability of gallenene via variation of atomistic thickness

Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering

Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.

First-Principles Investigation of Size Effects on Cohesive Energies of Transition-Metal Nanoclusters

The cohesive energy of transition-metal nanoparticles is crucial to understanding their stability and fundamental properties, which are essential for developing new technologies and applications in fields such as catalysis, electronics, energy storage, and biomedical engineering. In this study, we systematically investigate the size-dependent cohesive energies of all the 3d, 4d, and 5d transition-metal nanoclusters (small nanoparticles) based on a plane-wave-based method within general gradient approximation using first-principles density functional theory calculations. Our results show that the cohesive energies of nanoclusters decrease with decreasing size due to the increased surface-to-volume ratio and quantum confinement effects. A comparison of nanoclusters with different geometries reveals that the cohesive energy decreases as the number of nanocluster layers decreases. Notably, monolayer nanoclusters exhibit the lowest cohesive energies. We also find that the size-dependent cohesive energy trends are different for different transition metals, with some metals exhibiting stronger size effects than others. Our findings provide insights into the fundamental properties of transition-metal nanoclusters and have potential implications for their applications in various fields, such as catalysis, electronics, and biomedical engineering.

Structural and electronic changes in Ga-In and Ga-Sn alloys on melting

The melting behaviour of surface slabs of Ga-In and Ga-Sn is studied using periodic density functional theory and ab initio molecular dynamics. Analysis of the structure and electronics of the solid and liquid phases gives insight into the properties of these alloys, and why they may act as promising CO₂ reduction catalysts. We report melting points for slabs of hexa-layer Ga-In (386 K) and Ga-Sn (349 K) that are substantially lower than the pure hexa-layer Ga system (433 K), and attribute the difference to the degree to which the dopant (In or Sn) disrupts the layered Ga network. In molecular dynamics trajectories of the liquid structures, we find that dopant tends to migrate from the centre of the slab towards the surface and accumulate there. Bader charge calculations reveal that the surface dopant atoms have increased positive charge, and density of states analyses suggest the liquid alloys maintain metallic electronic behaviour. Thus, surface In and Sn may provide good binding sites for intermediates in CO₂ reduction. This work contributes to our understanding of the properties of liquid metal systems, and provides a foundation for modelling catalysis on these materials.

Liquid metal synthesis solvents for metallic crystals

In nature, snowflake ice crystals arrange themselves into diverse symmetrical six-sided structures. We show an analogy of this when zinc (Zn) dissolves and crystallizes in liquid gallium (Ga). The low-melting-temperature Ga is used as a "metallic solvent" to synthesize a range of flake-like Zn crystals. We extract these metallic crystals from the liquid metal solvent by reducing its surface tension using a combination of electrocapillary modulation and vacuum filtration. The liquid metal-grown crystals feature high morphological diversity and persistent symmetry. The concept is expanded to other single and binary metal solutes and Ga-based solvents, with the growth mechanisms elucidated through ab initio simulation of interfacial stability. This strategy offers general routes for creating highly crystalline, shape-controlled metallic or multimetallic fine structures from liquid metal solvents.

Single-Element 2D Materials beyond Graphene: Methods of Epitaxial Synthesis

Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, electrical, magnetic, and optical properties, they promise to revolutionize electronics. The unique properties of graphene-like 2D materials give them the potential to create completely new types of devices for functional electronics, nanophotonics, and quantum technologies. This paper considers epitaxially grown two-dimensional allotropic modifications of single elements: graphene (C) and its analogs (transgraphenes) borophene (B), aluminene (Al), gallenene (Ga), indiene (In), thallene (Tl), silicene (Si), germanene (Ge), stanene (Sn), plumbene (Pb), phosphorene (P), arsenene (As), antimonene (Sb), bismuthene (Bi), selenene (Se), and tellurene (Te). The emphasis is put on their structural parameters and technological modes in the method of molecular beam epitaxy, which ensure the production of high-quality defect-free single-element two-dimensional structures of a large area for promising device applications.

A mechanistic understanding of surface Bi enrichment in dilute GaBi systems

Experiment has shown that dilute GaBi systems produce a range of self-organised nanostructured patterns at the surface [Tang et al., Nat. Nanotechnol., 2021, 16, 431-439]. Using extensive ab initio molecular dynamics simulations, we elucidate the mechanisms underlying the formation of the Bi surface islands in Bi-doped Ga liquid metals. Here, we show that in order for internal Bi atoms to diffuse to the surface a lateral extension of the Ga surface network is required. Furthermore, the absence of surface Bi patterning perturbs the Ga surface network providing a preferred path for an internal Bi to diffuse. By understanding how and why Bi nucleates at a surface, we increase the ability to control, manipulate and design such systems for use in future electronic devices.