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Zhizhin KY, Turyshev ES, Shpigun LK, Gorobtsov PY, Simonenko NP, Simonenko TL, Kuznetsov NT. Poly(vinyl chloride)/Nanocarbon Composites for Advanced Potentiometric Membrane Sensor Design. Int J Mol Sci 2024; 25:1124. [PMID: 38256194 PMCID: PMC10816362 DOI: 10.3390/ijms25021124] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/18/2023] [Revised: 01/11/2024] [Accepted: 01/15/2024] [Indexed: 01/24/2024] Open
Abstract
Polymer nanocomposites filled with carbon nanoparticles (CNPs) are a hot topic in materials science. This article discusses the current research on the use of these materials as interfacial electron transfer films for solid contact potentiometric membrane sensors (SC-PMSs). The results of a comparative study of plasticized poly (vinyl chloride) (pPVC) matrices modified with single-walled carbon nanotubes (SWCNTs), fullerenes-C60, and their hybrid ensemble (SWCNTs-C60) are reported. The morphological characteristics and electrical conductivity of the prepared nanostructured composite films are reported. It was found that the specific electrical conductivity of the pPVC/SWCNTs-C60 polymer film was higher than that of pPVC filled with individual nanocomponents. The effectiveness of this composite material as an electron transfer film in a new potentiometric membrane sensor for detecting phenylpyruvic acid (in anionic form) was demonstrated. Screening for this metabolic product of phenylalanine in body fluids is of significant diagnostic interest in phenylketonuria (dementia), viral hepatitis, and alcoholism. The developed sensor showed a stable and fast Nernstian response for phenylpyruvate ions in aqueous solutions over the wide linear concentration range of 5 × 10-7-1 × 10-3 M, with a detection limit of 10-7.2 M.
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Affiliation(s)
| | - Evgeniy S. Turyshev
- N. S. Kurnakov Institute of General and Inorganic Chemistry of Russian Academy of Sciences, 119991 Moscow, Russia; (K.Y.Z.); (P.Y.G.); (N.P.S.); (T.L.S.)
| | - Liliya K. Shpigun
- N. S. Kurnakov Institute of General and Inorganic Chemistry of Russian Academy of Sciences, 119991 Moscow, Russia; (K.Y.Z.); (P.Y.G.); (N.P.S.); (T.L.S.)
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Dzienia A, Just D, Taborowska P, Mielanczyk A, Milowska KZ, Yorozuya S, Naka S, Shiraki T, Janas D. Mixed-Solvent Engineering as a Way around the Trade-Off between Yield and Purity of (7,3) Single-Walled Carbon Nanotubes Obtained Using Conjugated Polymer Extraction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2304211. [PMID: 37467281 DOI: 10.1002/smll.202304211] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Revised: 07/11/2023] [Indexed: 07/21/2023]
Abstract
The inability to purify nanomaterials such as single-walled carbon nanotubes (SWCNTs) to the desired extent hampers the progress in nanoscience. Various SWCNT types can be purified by extraction, but it is challenging to establish conditions giving rise to the isolation of high-purity fractions. The problem stems from the fact that common organic solvents or water cannot provide an optimal environment for purification. Consequently, one must often decide between the separation yield and purity of the product. This article reports how through the self-synthesis of poly(9,9-dioctylfluorene-alt-benzothiadiazole) with tailored characteristics, in-depth elucidation of the extraction process, and mixed-solvent engineering, a high-yield isolation of monochiral (7,3) SWCNTs is developed. The combination of toluene and tetralin affords a separation medium of unique properties, wherein both high yield and exceptional purity can be attained simultaneously. The reported results pave the way for further research on this rare chirality, which, as illustrated herein, is much more reactive than any of the previously separated SWCNTs.
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Affiliation(s)
- Andrzej Dzienia
- Department of Chemistry, Silesian University of Technology, B. Krzywoustego 4, Gliwice, 44-100, Poland
- Institute of Materials Engineering, University of Silesia in Katowice, Bankowa 12, Katowice, 40-007, Poland
| | - Dominik Just
- Department of Chemistry, Silesian University of Technology, B. Krzywoustego 4, Gliwice, 44-100, Poland
| | - Patrycja Taborowska
- Department of Chemistry, Silesian University of Technology, B. Krzywoustego 4, Gliwice, 44-100, Poland
| | - Anna Mielanczyk
- Department of Chemistry, Silesian University of Technology, B. Krzywoustego 4, Gliwice, 44-100, Poland
| | - Karolina Z Milowska
- CIC nanoGUNE, Donostia-San Sebastián, 20018, Spain
- Ikerbasque, Basque Foundation for Science, Bilbao, 48013, Spain
- TCM Group, Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Shunji Yorozuya
- Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
| | - Sadahito Naka
- Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
| | - Tomohiro Shiraki
- Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan
| | - Dawid Janas
- Department of Chemistry, Silesian University of Technology, B. Krzywoustego 4, Gliwice, 44-100, Poland
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Hooshmand S, Kassanos P, Keshavarz M, Duru P, Kayalan CI, Kale İ, Bayazit MK. Wearable Nano-Based Gas Sensors for Environmental Monitoring and Encountered Challenges in Optimization. SENSORS (BASEL, SWITZERLAND) 2023; 23:8648. [PMID: 37896744 PMCID: PMC10611361 DOI: 10.3390/s23208648] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Revised: 10/04/2023] [Accepted: 10/09/2023] [Indexed: 10/29/2023]
Abstract
With a rising emphasis on public safety and quality of life, there is an urgent need to ensure optimal air quality, both indoors and outdoors. Detecting toxic gaseous compounds plays a pivotal role in shaping our sustainable future. This review aims to elucidate the advancements in smart wearable (nano)sensors for monitoring harmful gaseous pollutants, such as ammonia (NH3), nitric oxide (NO), nitrous oxide (N2O), nitrogen dioxide (NO2), carbon monoxide (CO), carbon dioxide (CO2), hydrogen sulfide (H2S), sulfur dioxide (SO2), ozone (O3), hydrocarbons (CxHy), and hydrogen fluoride (HF). Differentiating this review from its predecessors, we shed light on the challenges faced in enhancing sensor performance and offer a deep dive into the evolution of sensing materials, wearable substrates, electrodes, and types of sensors. Noteworthy materials for robust detection systems encompass 2D nanostructures, carbon nanomaterials, conducting polymers, nanohybrids, and metal oxide semiconductors. A dedicated section dissects the significance of circuit integration, miniaturization, real-time sensing, repeatability, reusability, power efficiency, gas-sensitive material deposition, selectivity, sensitivity, stability, and response/recovery time, pinpointing gaps in the current knowledge and offering avenues for further research. To conclude, we provide insights and suggestions for the prospective trajectory of smart wearable nanosensors in addressing the extant challenges.
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Affiliation(s)
- Sara Hooshmand
- Sabanci University Nanotechnology Research and Application Center (SUNUM), Tuzla, Istanbul 34956, Turkey
| | - Panagiotis Kassanos
- The Hamlyn Centre, Institute of Global Health Innovation, Imperial College London, South Kensington, London SW7 2AZ, UK;
- Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ, UK
| | - Meysam Keshavarz
- The Hamlyn Centre, Institute of Global Health Innovation, Imperial College London, South Kensington, London SW7 2AZ, UK;
- Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ, UK
| | - Pelin Duru
- Faculty of Engineering and Natural Science, Sabanci University, Istanbul 34956, Turkey; (P.D.); (C.I.K.)
| | - Cemre Irmak Kayalan
- Faculty of Engineering and Natural Science, Sabanci University, Istanbul 34956, Turkey; (P.D.); (C.I.K.)
| | - İzzet Kale
- Applied DSP and VLSI Research Group, Department of Computer Science and Engineering, University of Westminster, London W1W 6UW, UK;
| | - Mustafa Kemal Bayazit
- Sabanci University Nanotechnology Research and Application Center (SUNUM), Tuzla, Istanbul 34956, Turkey
- Faculty of Engineering and Natural Science, Sabanci University, Istanbul 34956, Turkey; (P.D.); (C.I.K.)
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Paghi A, Mariani S, Barillaro G. 1D and 2D Field Effect Transistors in Gas Sensing: A Comprehensive Review. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206100. [PMID: 36703509 DOI: 10.1002/smll.202206100] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Revised: 12/04/2022] [Indexed: 06/18/2023]
Abstract
Rapid progress in the synthesis and fundamental understanding of 1D and 2D materials have solicited the incorporation of these nanomaterials into sensor architectures, especially field effect transistors (FETs), for the monitoring of gas and vapor in environmental, food quality, and healthcare applications. Yet, several challenges have remained unaddressed toward the fabrication of 1D and 2D FET gas sensors for real-field applications, which are related to properties, synthesis, and integration of 1D and 2D materials into the transistor architecture. This review paper encompasses the whole assortment of 1D-i.e., metal oxide semiconductors (MOXs), silicon nanowires (SiNWs), carbon nanotubes (CNTs)-and 2D-i.e., graphene, transition metal dichalcogenides (TMD), phosphorene-materials used in FET gas sensors, critically dissecting how the material synthesis, surface functionalization, and transistor fabrication impact on electrical versus sensing properties of these devices. Eventually, pros and cons of 1D and 2D FETs for gas and vapor sensing applications are discussed, pointing out weakness and highlighting future directions.
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Affiliation(s)
- Alessandro Paghi
- Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, Italy
| | - Stefano Mariani
- Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, Italy
| | - Giuseppe Barillaro
- Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, Italy
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Deng J, Li X, Li M, Wang X, Shao S, Li J, Fang Y, Zhao J. Fabrication and electrical properties of printed three-dimensional integrated carbon nanotube PMOS inverters on flexible substrates. NANOSCALE 2022; 14:4679-4689. [PMID: 35262537 DOI: 10.1039/d1nr08056c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The low resolution of current printing technology (usually 10-100 μm) limits the number of printed thin film transistors (TFTs) per processable area, resulting in the low integration of printed circuits. In this work, we developed a three-dimensional (3D) integration technology to increase the integration of printed TFTs and firstly achieved printed 3D single-walled carbon nanotube (SWCNT) PMOS inverter arrays on the flexible substrates. The flexible 3D PMOS inverter consists of a bottom-gate SWCNT TFT (i.e., a driving TFT) and a top-gate SWCNT TFT (i.e., a load TFT). Printed SWCNT TFTs exhibited good electrical properties with high carrier mobility (up to 9.53 cm2 V-1 s-1), high Ion/Ioff ratio (105-106), low hysteresis, and small subthreshold swing (SS) (70-80 mV dec-1). As-prepared 3D PMOS inverters exhibited rail-to-rail voltage output characteristics, high voltage gain (10) at a low operating voltage (VDD < 1 V), and good mechanical flexibility. Furthermore, the printed 3D PMOS inverters could be utilized to detect ammonia gases, exhibiting satisfactory stability and recovery rate. It is crucial for realizing high-density, multi-functional printed carbon-based electronic devices and circuits for wearable electronics and the Internet of Things (IoT).
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Affiliation(s)
- Jie Deng
- Institute of Nano Science and Technology, University of Science and Technology of China, 166 Ren Ai Road, SEID SIP, Suzhou, Jiangsu, 215123, PR China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, PR China.
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, PR China
| | - Xiaoqian Li
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, PR China
| | - Min Li
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, PR China
| | - Xin Wang
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, PR China
| | - Shuangshuang Shao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, PR China.
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, PR China
| | - Jiaqi Li
- Institute of Nano Science and Technology, University of Science and Technology of China, 166 Ren Ai Road, SEID SIP, Suzhou, Jiangsu, 215123, PR China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, PR China.
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, PR China
| | - Yuxiao Fang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, PR China.
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, PR China
| | - Jianwen Zhao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, PR China.
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, PR China
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Zou J, Zhang Q. Advances and Frontiers in Single-Walled Carbon Nanotube Electronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2102860. [PMID: 34687177 PMCID: PMC8655197 DOI: 10.1002/advs.202102860] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/05/2021] [Revised: 08/21/2021] [Indexed: 06/13/2023]
Abstract
Single-walled carbon nanotubes (SWCNTs) have been considered as one of the most promising electronic materials for the next-generation electronics in the more Moore era. Sub-10 nm SWCNT-field effect transistors (FETs) have been realized with several performances exceeding those of Si-based FETs at the same feature size. Several industrial initiatives have attempted to implement SWCNT electronics in integrated circuit (IC) chips. Here, the recent advances in SWCNT electronics are reviewed from in-depth understanding of the fundamental electronic structures, the carrier transport mechanisms, and the metal/SWCNT contact properties. In particular, the subthreshold switching properties are highlighted for low-power, energy-efficient device operations. State-of-the-art low-power SWCNT-based electronics and the key strategies to realize low-voltage and low-power operations are outlined. Finally, the essential challenges and prospects from the material preparation, device fabrication, and large-scale ICs integration for future SWCNT-based electronics are foregrounded.
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Affiliation(s)
- Jianping Zou
- Centre for Micro‐ & Nano‐ElectronicsSchool of Electrical and Electronic EngineeringNanyang Technological UniversitySingapore639798Singapore
| | - Qing Zhang
- Centre for Micro‐ & Nano‐ElectronicsSchool of Electrical and Electronic EngineeringNanyang Technological UniversitySingapore639798Singapore
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Affiliation(s)
- Beant Kaur Billing
- University Centre for Research and Development Chandigarh University Gharuan Mohali 140413 India
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Zhang P, Xiao Y, Zhang J, Liu B, Ma X, Wang Y. Highly sensitive gas sensing platforms based on field effect Transistor-A review. Anal Chim Acta 2021; 1172:338575. [PMID: 34119019 DOI: 10.1016/j.aca.2021.338575] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2020] [Revised: 04/21/2021] [Accepted: 04/22/2021] [Indexed: 01/08/2023]
Abstract
Highly selective, sensitive and fast gas sensing has attracted increasing attention in the fields of environmental protection, industrial production, personal safety as well as medical diagnostics. Field effect transistor (FET) sensors have been extensively investigated in gas sensing fields due to their small size, high sensitivity, high reliability and low energy consumption. This comprehensive review aims to discuss the recent advances in FET gas sensors based on materials such as carbon nanotubes, silicon carbide, silicon, metal oxides-, graphene-, transition metal dichalcogenides- and 2-dimensional black phosphorus. We first introduce different types of sensor structures and elaborate the gas-sensing mechanisms. Then, we describe the optimizing strategies for sensing performances, response parameters, FET based dual-mode sensors and FET based logic circuit sensors. Moreover, we present the key advances of the above materials in gas sensing performances. Meanwhile, shortcomings of such materials are also discussed and the future development of this field is proposed in this review.
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Affiliation(s)
- Pan Zhang
- School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, PR China.
| | - Yin Xiao
- School of Chemical Engineering and Technology, Tianjin Engineering Research Center Functional Fine Chemical, Tianjin University, Tianjin, 300072, PR China.
| | - Jingjing Zhang
- School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, PR China.
| | - Bingjie Liu
- School of Chemical Engineering and Technology, Tianjin Engineering Research Center Functional Fine Chemical, Tianjin University, Tianjin, 300072, PR China.
| | - Xiaofei Ma
- School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, PR China.
| | - Yong Wang
- School of Science, Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, PR China.
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Wang Y, Huang W, Zhang Z, Fan L, Huang Q, Wang J, Zhang Y, Zhang M. Ultralow-power flexible transparent carbon nanotube synaptic transistors for emotional memory. NANOSCALE 2021; 13:11360-11369. [PMID: 34096562 DOI: 10.1039/d1nr02099d] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Emulating the biological behavior of the human brain with artificial neuromorphic devices is essential for the future development of human-machine interactive systems, bionic sensing systems and intelligent robotic systems. In this paper, artificial flexible transparent carbon nanotube synaptic transistors (F-CNT-STs) with signal transmission and emotional learning functions are realized by adopting the poly(vinyl alcohol) (PVA)/SiO2 proton-conducting electrolyte. Synaptic functions of biological synapses including excitatory and inhibitory behaviors are successfully emulated in the F-CNT-STs. Besides, synaptic plasticity such as spike-duration-dependent plasticity, spike-number-dependent plasticity, spike-amplitude-dependent plasticity, paired-pulse facilitation, short-term plasticity, and long-term plasticity have all been systematically characterized. Moreover, the F-CNT-STs also closely imitate the behavior of human brain learning and emotional memory functions. After 1000 bending cycles at a radius of 3 mm, both the transistor characteristics and the synaptic functions can still be implemented correctly, showing outstanding mechanical capability. The realized F-CNT-STs possess low operating voltage, quick response, and ultra-low power consumption, indicating their high potential to work in low-power biological systems and artificial intelligence systems. The flexible artificial synaptic transistor enables its potential to be generally applicable to various flexible wearable biological and intelligent applications.
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Affiliation(s)
- Yarong Wang
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
| | - Weihong Huang
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
| | - Ziwei Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
| | - Lingchong Fan
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
| | - Qiuyue Huang
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
| | - Jiaxin Wang
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
| | - Yiming Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
| | - Min Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
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