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Yang L, Ni Y, Jiang C, Liu L, Zhang S, Liu J, Sun L, Xu W. A neuromorphic device mimicking synaptic plasticity under different body fluid K + homeostasis for artificial reflex path construction and pattern recognition. FUNDAMENTAL RESEARCH 2024; 4:353-361. [PMID: 38933504 PMCID: PMC11197765 DOI: 10.1016/j.fmre.2022.03.024] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2021] [Revised: 03/25/2022] [Accepted: 03/29/2022] [Indexed: 11/22/2022] Open
Abstract
The ionic environment of body fluids influences nervous functions for maintaining homeostasis in organisms and ensures normal perceptual abilities and reflex activities. Neural reflex activities, such as limb movements, are closely associated with potassium ions (K+). In this study, we developed artificial synaptic devices based on ion concentration-adjustable gels for emulating various synaptic plasticities under different K+ concentrations in body fluids. In addition to performing essential synaptic functions, potential applications in information processing and associative learning using short- and long-term plasticity realized using ion concentration-adjustable gels are presented. Artificial synaptic devices can be used for constructing an artificial neural pathway that controls artificial muscle reflex activities and can be used for image pattern recognition. All tests show a strong relationship with ion homeostasis. These devices could be applied to neuromorphic robots and human-machine interfaces.
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Affiliation(s)
- Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Yao Ni
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Chengpeng Jiang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Lu Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Song Zhang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Jiaqi Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Lin Sun
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Nankai University, Tianjin 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
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Wei H, Xu Z, Ni Y, Yang L, Sun L, Gong J, Zhang S, Qu S, Xu W. Mixed-Dimensional Nanoparticle-Nanowire Channels for Flexible Optoelectronic Artificial Synapse with Enhanced Photoelectric Response and Asymmetric Bidirectional Plasticity. NANO LETTERS 2023; 23:8743-8752. [PMID: 37698378 DOI: 10.1021/acs.nanolett.3c02836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
A mixed-dimensional dual-channel synaptic transistor composed of inorganic nanoparticles and organic nanowires was fabricated to expand the photoelectric gain range. The device can actualize the sensitization features of the nociceptor and shows improved responsiveness to visible light. Under electrical pulses with different polarities, the apparatus exhibits reconfigurable asymmetric bidirectional plasticity. Moreover, the devices demonstrate good operational tolerance and mechanical stability, retaining more than 60% of their maximum responsiveness after 100 consecutive/bidirectional and 1000 flex/flat operations. The improved photoelectric response of the device endows a high image recognition accuracy of greater than 80%. Asymmetric bidirectional plasticity is used as punishment/reward in a psychological experiment to emulate the improvement of learning motivation and enables real-time forward and backward deflection (+7 and -25°) of artificial muscle. The mixed-dimensional optoelectronic artificial synapses with switchable behavior and electron/hole transport type have important prospects for neuromorphic processing and artificial somatosensory nerves.
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Affiliation(s)
- Huanhuan Wei
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
- Institutes of Physical Science and Information Technology, School of Materials Science and Engineering, Key Laboratory of Structure and Functional Regulation of Hybrid Materials, Anhui University, Ministry of Education, Hefei 230601, People's Republic of China
| | - Zhipeng Xu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Yao Ni
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Lin Sun
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Jiangdong Gong
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Song Zhang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Shangda Qu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology, College of Electronic Information and Optical Engineering of Nankai University, National Institute for Advanced Materials, Nankai University, Ministry of Education, Tianjin 300350, People's Republic of China
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Jiang L, Xu C, Wu X, Zhao X, Zhang L, Zhang G, Wang X, Qiu L. Deep Ultraviolet Light Stimulated Synaptic Transistors Based on Poly(3-hexylthiophene) Ultrathin Films. ACS APPLIED MATERIALS & INTERFACES 2022; 14:11718-11726. [PMID: 35213133 DOI: 10.1021/acsami.1c23986] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Deep ultraviolet (DUV)-light-stimulated artificial synaptic devices exhibit potential applications in various disciplines including intelligent military monitoring, biological and medical analysis, flame detection, etc. Along these lines, we report here a DUV-light-stimulated synaptic transistor fabricated on a poly(3-hexylthiophene) (P3HT) ultrathin film that responds selectively to DUV light. Significantly, our devices have the ability to successfully simulate various synapse-like behaviors including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), short-term memory (STM), long-term memory (LTM), STM-to-LTM transition, and learning and forgetting behaviors. Moreover, the proposed artificial synaptic structures were also fabricated on flexible poly(ethylene terephthalate) (PET) substrates and also successfully simulated typical synaptic behaviors, which could be of great importance for wearable applications.
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Affiliation(s)
- Longlong Jiang
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Chenyin Xu
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Xiaocheng Wu
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Xue Zhao
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Lijun Zhang
- College of Light-Textile Engineering and Art, Anhui Agricultural University, Hefei, Anhui 230036, P. R. China
| | - Guobing Zhang
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Academy of Opto-Electronic Technology, and Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Opto-Electronic Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
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Xu Z, Ni Y, Han H, Wei H, Liu L, Zhang S, Huang H, Xu W. A hybrid ambipolar synaptic transistor emulating multiplexed neurotransmission for motivation control and experience-dependent learning. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2022.03.015] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2022]
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Hao S, Zhong S, Ji X, Pang KY, Wang N, Li H, Jiang Y, Lim KG, Chong TC, Zhao R, Loke DK. Activating Silent Synapses in Sulfurized Indium Selenide for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2021; 13:60209-60215. [PMID: 34878241 DOI: 10.1021/acsami.1c19062] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The transformation from silent to functional synapses is accompanied by the evolutionary process of human brain development and is essential to hardware implementation of the evolutionary artificial neural network but remains a challenge for mimicking silent to functional synapse activation. Here, we developed a simple approach to successfully realize activation of silent to functional synapses by controlled sulfurization of chemical vapor deposition-grown indium selenide crystals. The underlying mechanism is attributed to the migration of sulfur anions introduced by sulfurization. One of our most important findings is that the functional synaptic behaviors can be modulated by the degree of sulfurization and temperature. In addition, the essential synaptic behaviors including potentiation/depression, paired-pulse facilitation, and spike-rate-dependent plasticity are successfully implemented in the partially sulfurized functional synaptic device. The developed simple approach of introducing sulfur anions in layered selenide opens an effective new avenue to realize activation of silent synapses for application in evolutionary artificial neural networks.
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Affiliation(s)
- Song Hao
- Department of Engineering Product Design, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
- Department of Science, Mathematics and Technology, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
| | - Shuai Zhong
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing 100084, China
| | - Xinglong Ji
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing 100084, China
| | - Khin Yin Pang
- Department of Engineering Product Design, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
| | - Nan Wang
- Department of Science, Mathematics and Technology, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
| | - Huimin Li
- Department of Engineering Product Design, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
| | - Yu Jiang
- Department of Engineering Product Design, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
| | - Kian Guan Lim
- Department of Engineering Product Design, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
| | - Tow Chong Chong
- Department of Engineering Product Design, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
| | - Rong Zhao
- Department of Precision Instrument, Center for Brain Inspired Computing Research, Beijing Innovation Center for Future Chip, Tsinghua University, Beijing 100084, China
| | - Desmond K Loke
- Department of Science, Mathematics and Technology, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore
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Wang R, Chen P, Hao D, Zhang J, Shi Q, Liu D, Li L, Xiong L, Zhou J, Huang J. Artificial Synapses Based on Lead-Free Perovskite Floating-Gate Organic Field-Effect Transistors for Supervised and Unsupervised Learning. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43144-43154. [PMID: 34470204 DOI: 10.1021/acsami.1c08424] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Synaptic devices are expected to overcome von Neumann's bottleneck and served as one of the foundations for future neuromorphic computing. Lead halide perovskites are considered as promising photoactive materials but limited by the toxicity of lead. Herein, lead-free perovskite CsBi3I10 is utilized as a photoactive material to fabricate organic synaptic transistors with a floating-gate structure for the first time. The devices can maintain the Ilight/Idark ratio of 103 for 4 h and have excellent stability within the 30 days test even without encapsulation. Synaptic functions are successfully simulated. Notably, by combining the decent charge transport property of the organic semiconductor and the excellent photoelectronic property of CsBi3I10, synaptic performance can be realized even with an operating voltage as low as -0.01 V, which is rare among floating-gate synaptic transistors. Furthermore, artificial neural networks are constructed. We propose a new method that can simulate the synaptic weight value in multiple digit form to achieve complete gradient descent. The image recognition test exhibits thrilling recognition accuracy for both supervised (91%) and unsupervised (81%) classifications. These results demonstrate the great potential of floating-gate organic synaptic transistors in neuromorphic computing.
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Affiliation(s)
- Ruizhi Wang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 201804, P. R. China
| | - Pengyue Chen
- School of Electronic and Information Engineering, Tongji University, Shanghai 201804, P. R. China
| | - Dandan Hao
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 201804, P. R. China
| | - Junyao Zhang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 201804, P. R. China
| | - Qianqian Shi
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 201804, P. R. China
| | - Dapeng Liu
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 201804, P. R. China
| | - Li Li
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 201804, P. R. China
| | - Lize Xiong
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Shanghai 200434, P. R. China
| | - Junhe Zhou
- School of Electronic and Information Engineering, Tongji University, Shanghai 201804, P. R. China
| | - Jia Huang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 201804, P. R. China
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Shanghai 200434, P. R. China
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