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Fan J, Han C, Yang G, Song B, Xu R, Xiang C, Zhang T, Qian L. Recent Progress of Quantum Dots Light-Emitting Diodes: Materials, Device Structures, and Display Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312948. [PMID: 38813832 DOI: 10.1002/adma.202312948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 04/05/2024] [Indexed: 05/31/2024]
Abstract
Colloidal quantum dots (QDs), as a class of 0D semiconductor materials, have generated widespread interest due to their adjustable band gap, exceptional color purity, near-unity quantum yield, and solution-processability. With decades of dedicated research, the potential applications of quantum dots have garnered significant recognition in both the academic and industrial communities. Furthermore, the related quantum dot light-emitting diodes (QLEDs) stand out as one of the most promising contenders for the next-generation display technologies. Although QD-based color conversion films are applied to improve the color gamut of existing display technologies, the broader application of QLED devices remains in its nascent stages, facing many challenges on the path to commercialization. This review encapsulates the historical discovery and subsequent research advancements in QD materials and their synthesis methods. Additionally, the working mechanisms and architectural design of QLED prototype devices are discussed. Furthermore, the review surveys the latest advancements of QLED devices within the display industry. The narrative concludes with an examination of the challenges and perspectives of QLED technology in the foreseeable future.
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Affiliation(s)
- Junpeng Fan
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Changfeng Han
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Guojian Yang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Bin Song
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Department of Materials Science and Engineering, Xiamen University, Xiamen, 361005, P. R. China
| | - Rui Xu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Department of Mechanical, Materials and Manufacturing Engineering, University of Nottingham Ningbo China, Ningbo, 315100, P. R. China
| | - Chaoyu Xiang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Ting Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Lei Qian
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
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Lee J, Jo H, Choi M, Park S, Oh J, Lee K, Bae Y, Rhee S, Roh J. Recent Progress on Quantum Dot Patterning Technologies for Commercialization of QD-LEDs: Current Status, Future Prospects, and Exploratory Approaches. SMALL METHODS 2024; 8:e2301224. [PMID: 38193264 DOI: 10.1002/smtd.202301224] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 11/25/2023] [Indexed: 01/10/2024]
Abstract
Colloidal quantum dots (QDs) are widely regarded as advanced emissive materials with significant potential for display applications owing to their excellent optical properties such as high color purity, near-unity photoluminescence quantum yield, and size-tunable emission color. Building upon these attractive attributes, QDs have successfully garnered attention in the display market as down-conversion luminophores and now venturing into the realm of self-emissive displays, exemplified by QD light-emitting diodes (QD-LEDs). However, despite these advancements, there remains a relatively limited body of research on QD patterning technologies, which are crucial prerequisites for the successful commercialization of QD-LEDs. Thus, in this review, an overview of the current status and prospects of QD patterning technologies to accelerate the commercialization of QD-LEDs is provided. Within this review, a comprehensive investigation of three prevailing patterning methods: optical lithography, transfer printing, and inkjet printing are conducted. Furthermore, several exploratory QD patterning techniques that offer distinct advantages are introduced. This study not only paves the way for successful commercialization but also extends the potential application of QD-LEDs into uncharted frontiers.
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Affiliation(s)
- Jaeyeop Lee
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Hyeona Jo
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Minseok Choi
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Sangwook Park
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Jiyoon Oh
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Kyoungeun Lee
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Yeyun Bae
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Seunghyun Rhee
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Republic of Korea
| | - Jeongkyun Roh
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
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Drake GA, Keating LP, Huang C, Shim M. Colloidal Multi-Dot Nanorods. J Am Chem Soc 2024; 146:9074-9083. [PMID: 38517010 DOI: 10.1021/jacs.3c14115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
Colloidal nanorod heterostructures consisting of multiple quantum dots within a nanorod (n-DNRs, where n is the number of quantum dots within a nanorod) are synthesized with alternating segments of CdSe "dot" and CdS "rod" via solution heteroepitaxy. The reaction temperature, time dependent ripening, and asymmetry of the wurtzite lattice and the resulting anisotropy of surface ligand steric hindrance are exploited to vary the morphology of the growing quantum dot segments. The alternating CdSe and CdS growth steps can be easily repeated to increment the dot number in unidirectional or bidirectional growth regimes. As an initial exploration of electron occupation effects on their optical properties, asymmetric 2-DNRs consisting of two dots of different lengths and diameters are synthesized and are shown to exhibit a change in color and an unusual photoluminescence quantum yield increase upon photochemical doping.
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Affiliation(s)
- Gryphon A Drake
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Logan P Keating
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Conan Huang
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Moonsub Shim
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
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Dalui A, Ariga K, Acharya S. Colloidal semiconductor nanocrystals: from bottom-up nanoarchitectonics to energy harvesting applications. Chem Commun (Camb) 2023; 59:10835-10865. [PMID: 37608724 DOI: 10.1039/d3cc02605a] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/24/2023]
Abstract
Colloidal semiconductor nanocrystals (NCs) have been extensively investigated owing to their unique properties induced by the quantum confinement effect. The advent of colloidal synthesis routes led to the design of stable colloidal NCs with uniform size, shape, and composition. Metal oxides, phosphides, and chalcogenides (ZnE, CdE, PbE, where E = S, Se, or Te) are few of the most important monocomponent semiconductor NCs, which show excellent optoelectronic properties. The ability to build quantum confined heterostructures comprising two or more semiconductor NCs offer greater customization and tunability of properties compared to their monocomponent counterparts. More recently, the halide perovskite NCs showed exceptional optoelectronic properties for energy generation and harvesting applications. Numerous applications including photovoltaic, photodetectors, light emitting devices, catalysis, photochemical devices, and solar driven fuel cells have demonstrated using these NCs in the recent past. Overall, semiconductor NCs prepared via the colloidal synthesis route offer immense potential to become an alternative to the presently available device applications. This feature article will explore the progress of NCs syntheses with outstanding potential to control the shape and spatial dimensionality required for photovoltaic, light emitting diode, and photocatalytic applications. We also attempt to address the challenges associated with achieving high efficiency devices with the NCs and possible solutions including interface engineering, packing control, encapsulation chemistry, and device architecture engineering.
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Affiliation(s)
- Amit Dalui
- Department of Chemistry, Jogamaya Devi College, Kolkata-700026, India
| | - Katsuhiko Ariga
- Graduate School of Frontier Sciences, The University of Tokyo Kashiwa, Chiba 277-8561, Japan
- International Research Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
| | - Somobrata Acharya
- School of Applied and Interdisciplinary Sciences, Indian Association for the Cultivation of Science, Kolkata-700032, India.
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Nguyen HA, Dixon G, Dou FY, Gallagher S, Gibbs S, Ladd DM, Marino E, Ondry JC, Shanahan JP, Vasileiadou ES, Barlow S, Gamelin DR, Ginger DS, Jonas DM, Kanatzidis MG, Marder SR, Morton D, Murray CB, Owen JS, Talapin DV, Toney MF, Cossairt BM. Design Rules for Obtaining Narrow Luminescence from Semiconductors Made in Solution. Chem Rev 2023. [PMID: 37311205 DOI: 10.1021/acs.chemrev.3c00097] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Solution-processed semiconductors are in demand for present and next-generation optoelectronic technologies ranging from displays to quantum light sources because of their scalability and ease of integration into devices with diverse form factors. One of the central requirements for semiconductors used in these applications is a narrow photoluminescence (PL) line width. Narrow emission line widths are needed to ensure both color and single-photon purity, raising the question of what design rules are needed to obtain narrow emission from semiconductors made in solution. In this review, we first examine the requirements for colloidal emitters for a variety of applications including light-emitting diodes, photodetectors, lasers, and quantum information science. Next, we will delve into the sources of spectral broadening, including "homogeneous" broadening from dynamical broadening mechanisms in single-particle spectra, heterogeneous broadening from static structural differences in ensemble spectra, and spectral diffusion. Then, we compare the current state of the art in terms of emission line width for a variety of colloidal materials including II-VI quantum dots (QDs) and nanoplatelets, III-V QDs, alloyed QDs, metal-halide perovskites including nanocrystals and 2D structures, doped nanocrystals, and, finally, as a point of comparison, organic molecules. We end with some conclusions and connections, including an outline of promising paths forward.
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Affiliation(s)
- Hao A Nguyen
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Grant Dixon
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Florence Y Dou
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Shaun Gallagher
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Stephen Gibbs
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Dylan M Ladd
- Department of Materials Science and Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Emanuele Marino
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Dipartimento di Fisica e Chimica, Università degli Studi di Palermo, Via Archirafi 36, 90123 Palermo, Italy
| | - Justin C Ondry
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - James P Shanahan
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Eugenia S Vasileiadou
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Stephen Barlow
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Daniel R Gamelin
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - David S Ginger
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - David M Jonas
- Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, United States
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Mercouri G Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Seth R Marder
- Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, United States
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
- Department of Chemical and Biological Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Daniel Morton
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Christopher B Murray
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Jonathan S Owen
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Dmitri V Talapin
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Michael F Toney
- Department of Materials Science and Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
- Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United States
- Department of Chemical and Biological Engineering, University of Colorado Boulder, Boulder, Colorado 80303, United States
| | - Brandi M Cossairt
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
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Zhang X, Bao H, Chen C, Wu XG, Li M, Ji W, Wang S, Zhong H. The fatigue effects in red emissive CdSe based QLED operated around turn-on voltage. J Chem Phys 2023; 158:131101. [PMID: 37031138 DOI: 10.1063/5.0145471] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/07/2023] Open
Abstract
The operational stability is a current bottleneck facing the quantum dot light-emitting diodes (QLEDs). In particular, the device working around turn-on voltage suffers from unbalanced charge injection and heavy power loss. Here, we investigate the operational stability of red emissive CdSe QLEDs operated at different applied voltages. Compared to the rising luminance at higher voltages, the device luminance quickly decreases when loaded around the turn-on voltage, but recovers after unloading or slight heat treatment, which is termed fatigue effects of operational QLED. The electroluminescence and photoluminescence spectra before and after a period of operation at low voltages show that the abrupt decrease in device luminance derives from the reduction of quantum yield in quantum dots. Combined with transient photoluminescence and electroluminescence measurements, as well as equivalent circuit model analysis, the electron accumulation in quantum dots mainly accounts for the observed fatigue effects of a QLED during the operation around turn-on voltage. The underlying mechanisms at the low-voltage working regime will be very helpful for the industrialization of QLED.
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Affiliation(s)
- Xin Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Hui Bao
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Cuili Chen
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Xian-gang Wu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Menglin Li
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Wenyu Ji
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Shuangpeng Wang
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao SAR, 999078, China
| | - Haizheng Zhong
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
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7
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Islas-Rodriguez N, Muñoz R, Rodriguez JA, Vazquez-Garcia RA, Reyes M. Integration of ternary I-III-VI quantum dots in light-emitting diodes. Front Chem 2023; 11:1106778. [PMID: 37035113 PMCID: PMC10076594 DOI: 10.3389/fchem.2023.1106778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2022] [Accepted: 03/13/2023] [Indexed: 04/11/2023] Open
Abstract
Ternary I-III-VI quantum dots (TQDs) are semiconductor nanomaterials that have been gradually incorporated in the fabrication of light-emitting diodes (LEDs) over the last 10 years due to their physicochemical and photoluminescence properties, such as adequate quantum yield values, tunable wavelength emission, and easy synthesis strategies, but mainly because of their low toxicity that allows them to be excellent candidates to compete with conventional Cd-Pb-based QDs. This review addresses the different strategies to obtain TQDs and how synthesis conditions influence their physicochemical properties, followed by the LEDs parameters achieved using TQDs. The second part of the review summarizes how TQDs are integrated into LEDs and white light-emitting diodes (WLEDs). Furthermore, an insight into the state-of-the-art LEDs development using TQDs, including its advantages and disadvantages and the challenges to overcome, is presented at the end of the review.
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Affiliation(s)
- Nery Islas-Rodriguez
- Universidad Autonoma del Estado de Hidalgo (UAEH). Area Academica de Ciencias de La Tierra y Materiales, Hgo, Mexico
| | - Raybel Muñoz
- Universidad Autonoma del Estado de Hidalgo (UAEH). Area Academica de Quimica, Hidalgo, Mineral de la Reforma, Mexico
| | - Jose A. Rodriguez
- Universidad Autonoma del Estado de Hidalgo (UAEH). Area Academica de Quimica, Hidalgo, Mineral de la Reforma, Mexico
| | - Rosa A. Vazquez-Garcia
- Universidad Autonoma del Estado de Hidalgo (UAEH). Area Academica de Ciencias de La Tierra y Materiales, Hgo, Mexico
| | - Martin Reyes
- Universidad Autonoma del Estado de Hidalgo (UAEH). Area Academica de Ciencias de La Tierra y Materiales, Hgo, Mexico
- *Correspondence: Martin Reyes,
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8
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Yoo D, Bak E, Ju HM, Shin YM, Choi MJ. Zinc Carboxylate Surface Passivation for Enhanced Optical Properties of In(Zn)P Colloidal Quantum Dots. MICROMACHINES 2022; 13:mi13101775. [PMID: 36296128 PMCID: PMC9610929 DOI: 10.3390/mi13101775] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Revised: 10/15/2022] [Accepted: 10/17/2022] [Indexed: 06/01/2023]
Abstract
Indium phosphide (InP) colloidal quantum dots (CQDs) have generated great interest as next-generation light-emitting materials owing to their narrow emission spectra and environment-friendly components. The minimized surface defects is essential to achieve narrow full-width at half-maximum (FWHM) and high photoluminescence quantum yield (PLQY). However, InP CQDs are readily oxidized in ambient condition, which results in formation of oxidation defect states on the surface of InP CQDs. Herein, we introduce a strategy to successfully passivate the surface defects of InP core by zinc complexes. The zinc carboxylates passivation reduces FWHM of InP CQDs from 130 nm to 70 nm and increases PLQY from 1% to 14% without shelling. Furthermore, the photoluminescence (PL) peak has shifted from 670 nm to 510 nm with an increase of zinc carboxylates passivation, which suggests that excessive zinc carboxylates functions as a size-regulating reagent in the synthesis.
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Abstract
Anisotropic heterostructures of colloidal nanocrystals embed size-, shape-, and composition-dependent electronic structure within variable three-dimensional morphology, enabling intricate design of solution-processable materials with high performance and programmable functionality. The key to designing and synthesizing such complex materials lies in understanding the fundamental thermodynamic and kinetic factors that govern nanocrystal growth. In this review, nanorod heterostructures, the simplest of anisotropic nanocrystal heterostructures, are discussed with respect to their growth mechanisms. The effects of crystal structure, surface faceting/energies, lattice strain, ligand sterics, precursor reactivity, and reaction temperature on the growth of nanorod heterostructures through heteroepitaxy and cation exchange reactions are explored with currently known examples. Understanding the role of various thermodynamic and kinetic parameters enables the controlled synthesis of complex nanorod heterostructures that can exhibit unique tailored properties. Selected application prospects arising from such capabilities are then discussed.
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Affiliation(s)
- Gryphon A Drake
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 United States
| | - Logan P Keating
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 United States
| | - Moonsub Shim
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 United States
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10
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Optoelectronic system and device integration for quantum-dot light-emitting diode white lighting with computational design framework. Nat Commun 2022; 13:4189. [PMID: 35922408 PMCID: PMC9349286 DOI: 10.1038/s41467-022-31853-9] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2021] [Accepted: 06/30/2022] [Indexed: 11/09/2022] Open
Abstract
We propose a computational design framework to design the architecture of a white lighting system having multiple pixelated patterns of electric-field-driven quantum dot light-emitting diodes. The quantum dot of the white lighting system has been optimised by a system-level combinatorial colour optimisation process with the Nelder-Mead algorithm used for machine learning. The layout of quantum dot patterns is designed precisely using rigorous device-level charge transport simulation with an electric-field dependent charge injection model. A theoretical maximum of 97% colour rendering index has been achieved with red, green, cyan, and blue quantum dot light-emitting diodes as primary colours. The white lighting system has been fabricated using the transfer printing technique to validate the computational design framework. It exhibits excellent lighting performance of 92% colour rendering index and wide colour temperature variation from 1612 K to 8903 K with only the four pixelated quantum dots as primary.
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Dhas N, Pastagia M, Sharma A, Khera A, Kudarha R, Kulkarni S, Soman S, Mutalik S, Barnwal RP, Singh G, Patel M. Organic quantum dots: An ultrasmall nanoplatform for cancer theranostics. J Control Release 2022; 348:798-824. [PMID: 35752250 DOI: 10.1016/j.jconrel.2022.06.033] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/11/2022] [Revised: 06/16/2022] [Accepted: 06/19/2022] [Indexed: 12/19/2022]
Abstract
Tumours are the second leading cause of death globally, generating alterations in biological interactions and, as a result, malfunctioning of crucial genetic traits. Technological advancements have made it possible to identify tumours at the cellular level, making transcriptional gene variations and other genetic variables more easily investigated. Standard chemotherapy is seen as a non-specific treatment that has the potential to destroy healthy cells while also causing systemic toxicity in individuals. As a result, developing new technologies has become a pressing necessity. QDs are semiconductor particles with diameters ranging from 2 to 10 nanometers. QDs have grabbed the interest of many researchers due to their unique characteristics, including compact size, large surface area, surface charges, and precise targeting. QD-based drug carriers are well known among the many nanocarriers. Using QDs as a delivery approach enhances solubility, lengthens retention time, and reduces the harmful effects of loaded medicines. Several varieties of quantum dots used in drug administration are discussed in this article, along with their chemical and physical characteristics and manufacturing methods. Furthermore, it discusses the role of QDs in biological, medicinal, and theranostic applications.
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Affiliation(s)
- Namdev Dhas
- Department of Pharmaceutics, Manipal College of Pharmaceutical Sciences, Manipal Academy of Higher Education (MAHE), Manipal 576104, Karnataka, India
| | - Monarch Pastagia
- Shobhaben Pratapbhai Patel School of Pharmacy & Technology Management, SVKMs NMIMS, V. L. Mehta Road, Vile Parle (W), Mumbai, Maharashtra 400056, India
| | - Akanksha Sharma
- Department of Biophysics, Panjab University, Chandigarh 160014, India
| | - Alisha Khera
- Department of Biophysics, Panjab University, Chandigarh 160014, India
| | - Ritu Kudarha
- Department of Pharmaceutics, Manipal College of Pharmaceutical Sciences, Manipal Academy of Higher Education (MAHE), Manipal 576104, Karnataka, India
| | - Sanjay Kulkarni
- Department of Pharmaceutics, Manipal College of Pharmaceutical Sciences, Manipal Academy of Higher Education (MAHE), Manipal 576104, Karnataka, India
| | - Soji Soman
- Department of Pharmaceutics, Manipal College of Pharmaceutical Sciences, Manipal Academy of Higher Education (MAHE), Manipal 576104, Karnataka, India
| | - Srinivas Mutalik
- Department of Pharmaceutics, Manipal College of Pharmaceutical Sciences, Manipal Academy of Higher Education (MAHE), Manipal 576104, Karnataka, India
| | | | - Gurpal Singh
- University Institute of Pharmaceutical Sciences, Panjab University, Chandigarh 160014, India.
| | - Mital Patel
- Shobhaben Pratapbhai Patel School of Pharmacy & Technology Management, SVKMs NMIMS, V. L. Mehta Road, Vile Parle (W), Mumbai, Maharashtra 400056, India.
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