Role of carrier-transfer in the optical nonlinearity of graphene/Bi2Te3 heterojunctions

Magnetic Topological Insulator MnBi2Te4 Nanosheets for Femtosecond Pulse Generation

The van der Waals layered material MnBi2Te4, as a magnetic topological insulator, has attracted tremendous interest for novel physics research in the fields of condensed matter physics and materials science. However, the nonlinear optical properties of MnBi2Te4 and its applications in ultrafast optics have rarely been explored. In this study, high-quality MnBi2Te4 nanosheets have been successfully synthesized by the self-flux method. The morphology, chemical composition, magnetic properties, and nonlinear optical characteristics were systematically investigated. The magnetic transition of MnBi2Te4 was confirmed by a low-temperature spatially resolved spectroscopic technique. The saturable absorption property of MnBi2Te4 was measured by a balanced twin-detector system with a modulation depth of 4.5% and a saturation optical intensity of 2.35 GW/cm2. Furthermore, by inserting the MnBi2Te4-based saturable absorber, a soliton mode-locking laser operating at 1558.8 nm was obtained with a pulse duration of 331 fs. This research will pave the way for applications of the magnetic TI MnBi2Te4 in nonlinear optics and photonics.

Electron Transport Properties of Graphene/WS2 Van Der Waals Heterojunctions

Van der Waals heterojunctions of two-dimensional atomic crystals are widely used to build functional devices due to their excellent optoelectronic properties, which are attracting more and more attention, and various methods have been developed to study their structure and properties. Here, density functional theory combined with the nonequilibrium Green's function technique has been used to calculate the transport properties of graphene/WS2 heterojunctions. It is observed that the formation of heterojunctions does not lead to the opening of the Dirac point of graphene. Instead, the respective band structures of both graphene and WS2 are preserved. Therefore, the heterojunction follows a unique Ohm's law at low bias voltages, despite the presence of a certain rotation angle between the two surfaces within the heterojunction. The transmission spectra, the density of states, and the transmission eigenstate are used to investigate the origin and mechanism of unique linear I-V characteristics. This study provides a theoretical framework for designing mixed-dimensional heterojunction nanoelectronic devices.

Third-order optical nonlinearities of exfoliated Bi2Te3 nanoparticle films in UV, visible and near-infrared ranges measured by tunable femtosecond pulses

We characterize the nonlinear optical properties of synthesized Bi₂Te₃ nanoparticle-contained thin films using the tunable femtosecond laser in the spectral range of 400-1000 nm. These nanoparticles possess a strong saturable absorption and positive nonlinear refraction (-6.8×10^-5 cm W^-1 in the case of 500 nm, 150 fs probe pulses, and 3×10^-10 cm² W^-1 in the case of 400 nm, 150 fs probe pulses, respectively). The spectral, intensity, and temporal variation of saturable absorption and nonlinear refraction of the thin films containing exfoliated Bi₂Te₃ nanoparticles are discussed.

Bi2Te3/Graphene Heterostructure as the Saturable Absorber for ~1.0 μm Passively Q-switched Solid State Pulsed Laser

Due to the tunable nonlinear optical properties of the Bi2Te3/graphene heterostructure, stable solid state pulsed lasers based on the Bi2Te3/graphene saturable absorber have attracted intensive attention. In this work, the Bi2Te3/graphene heterostructure with good nonlinear absorption characteristics was synthesized by a self-assembly solvothermal route, and the optical saturable absorption properties of the saturable absorber were investigated. Owing to the large modulation depth of Bi2Te3 nanosheets and the high thermal conductivity of graphene, the Bi2Te3/graphene heterostructure saturable absorber shown good nonlinear saturable absorber performance and contributed the improved passively Q-switched Yb3+: GdAl3(BO3)4 pulsed laser when compared with that of the pure Bi2Te3 based Yb3+: GdAl3(BO3)4 laser, no matter pulse width or pulse energy. Our work demonstrates that the Bi2Te3/graphene heterostructure was a promising saturable absorber in ~1 μm solid-state pulsed lasers.

Plasmon-induced ultrafast charge transfer in single-particulate Cu1.94S-ZnS nanoheterostructures

Recombination centers generated from structural and interfacial defects in nanoheterostructures (NHs) prevent effective photo-induced charge transfer and have blocked the advance of many photoresponsive applications. Strategies to construct high-quality interfaces in NHs are emerging but are limited in the release of interfacial strain and the integrality of the sublattice. Herein, we synthesize single-particulate Cu_1.94S-ZnS NHs with a continuous sublattice using a nanoscale cation exchange reaction (CE). Under near-infrared (NIR) radiation (λ = 1500 nm), femtosecond open-aperture (OA) Z-scan measurements are applied to investigate the nonlinear optical features of samples and verify the existence of plasma-induced charge transfer in the Cu_1.94S-ZnS NHs system. The resulting charge transfer time (τ _CT) of ∼0.091 picoseconds (ps) was confirmed by the femtosecond time-resolved pump-probe technique. Such an ultrafast charge transfer process has been rarely reported in semiconductor-semiconductor NHs. The results suggest that CE can be used as a promising tool to construct well-ordered interfacial structures, which are significant for the performance enhancement of NHs for photon utilization.

Multiple-Dimensionally Controllable Nucleation Sites of Two-Dimensional WS2/Bi2Se3 Heterojunctions Based on Vapor Growth

Two-dimensional (2D) heterojunctions have attracted great attention due to their excellent optoelectronic properties. Until now, precisely controlling the nucleation density and stacking area of 2D heterojunctions has been of critical importance but still a huge challenge. It hampers the progress of controlled growth of 2D heterojunctions for optoelectronic devices because the potential relation between numerous growth parameters and nucleation density is always poorly understood. Herein, by cooperatively controlling three parameters (substrate temperature, gas flow rate, and precursor concentration) in modified vapor deposition growth, the nucleation density and stacking area of WS₂/Bi₂Se₃ vertical heterojunctions were successfully modulated. High-quality WS₂/Bi₂Se₃ vertical heterojunctions with various stacking areas were effectively grown from single and multiple nucleation sites. Moreover, the potential nucleation mechanism and efficient charge transfer of WS₂/Bi₂Se₃ vertical heterojunctions were systematically studied by utilizing the density functional theory and photoluminescence spectra. This modified vapor deposition strategy and the proposed mechanism are helpful in controlling the nucleation density and stacking area of other heterojunctions, which plays a key role in the preparation of electronic and optoelectronic nanodevices.