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Deng H, Zhang Y, Yang X, Yu Q, Wang P, Yang Z, Dai Y, Pang X, Wang X, Wu J, Zhou P. Magnetic Topological Insulator MnBi 2Te 4 Nanosheets for Femtosecond Pulse Generation. ACS APPLIED MATERIALS & INTERFACES 2023; 15:47250-47259. [PMID: 37751475 DOI: 10.1021/acsami.3c09544] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/28/2023]
Abstract
The van der Waals layered material MnBi2Te4, as a magnetic topological insulator, has attracted tremendous interest for novel physics research in the fields of condensed matter physics and materials science. However, the nonlinear optical properties of MnBi2Te4 and its applications in ultrafast optics have rarely been explored. In this study, high-quality MnBi2Te4 nanosheets have been successfully synthesized by the self-flux method. The morphology, chemical composition, magnetic properties, and nonlinear optical characteristics were systematically investigated. The magnetic transition of MnBi2Te4 was confirmed by a low-temperature spatially resolved spectroscopic technique. The saturable absorption property of MnBi2Te4 was measured by a balanced twin-detector system with a modulation depth of 4.5% and a saturation optical intensity of 2.35 GW/cm2. Furthermore, by inserting the MnBi2Te4-based saturable absorber, a soliton mode-locking laser operating at 1558.8 nm was obtained with a pulse duration of 331 fs. This research will pave the way for applications of the magnetic TI MnBi2Te4 in nonlinear optics and photonics.
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Affiliation(s)
- Haiqin Deng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Yan Zhang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China
| | - Xiaoxin Yang
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong, China
| | - Qiang Yu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China
| | - Pengdong Wang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China
| | - Zixin Yang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Yongping Dai
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China
- Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Xiuyang Pang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Xiao Wang
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong, China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Pu Zhou
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
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Guo J, Dai X, Zhang L, Li H. Electron Transport Properties of Graphene/WS 2 Van Der Waals Heterojunctions. Molecules 2023; 28:6866. [PMID: 37836709 PMCID: PMC10574387 DOI: 10.3390/molecules28196866] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Revised: 09/26/2023] [Accepted: 09/27/2023] [Indexed: 10/15/2023] Open
Abstract
Van der Waals heterojunctions of two-dimensional atomic crystals are widely used to build functional devices due to their excellent optoelectronic properties, which are attracting more and more attention, and various methods have been developed to study their structure and properties. Here, density functional theory combined with the nonequilibrium Green's function technique has been used to calculate the transport properties of graphene/WS2 heterojunctions. It is observed that the formation of heterojunctions does not lead to the opening of the Dirac point of graphene. Instead, the respective band structures of both graphene and WS2 are preserved. Therefore, the heterojunction follows a unique Ohm's law at low bias voltages, despite the presence of a certain rotation angle between the two surfaces within the heterojunction. The transmission spectra, the density of states, and the transmission eigenstate are used to investigate the origin and mechanism of unique linear I-V characteristics. This study provides a theoretical framework for designing mixed-dimensional heterojunction nanoelectronic devices.
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Affiliation(s)
- Junnan Guo
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061, China;
| | - Xinyue Dai
- Materdicine Lab, School of Life Sciences, Shanghai University, Shanghai 200444, China;
| | - Lishu Zhang
- Peter Grünberg Institut (PGI-1) and Institute for Advanced Simulation (IAS-1), Forschungszentrum Jülich, Jülich 52428, Germany;
| | - Hui Li
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061, China;
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Kim VV, Bundulis A, Popov VS, Lavrentyev NA, Lizunova AA, Shuklov IA, Ponomarenko VP, Grube J, Ganeev RA. Third-order optical nonlinearities of exfoliated Bi 2Te 3 nanoparticle films in UV, visible and near-infrared ranges measured by tunable femtosecond pulses. OPTICS EXPRESS 2022; 30:6970-6980. [PMID: 35299470 DOI: 10.1364/oe.449490] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2021] [Accepted: 01/19/2022] [Indexed: 06/14/2023]
Abstract
We characterize the nonlinear optical properties of synthesized Bi2Te3 nanoparticle-contained thin films using the tunable femtosecond laser in the spectral range of 400-1000 nm. These nanoparticles possess a strong saturable absorption and positive nonlinear refraction (-6.8×10-5 cm W-1 in the case of 500 nm, 150 fs probe pulses, and 3×10-10 cm2 W-1 in the case of 400 nm, 150 fs probe pulses, respectively). The spectral, intensity, and temporal variation of saturable absorption and nonlinear refraction of the thin films containing exfoliated Bi2Te3 nanoparticles are discussed.
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Bi2Te3/Graphene Heterostructure as the Saturable Absorber for ~1.0 μm Passively Q-switched Solid State Pulsed Laser. CRYSTALS 2022. [DOI: 10.3390/cryst12020222] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
Abstract
Due to the tunable nonlinear optical properties of the Bi2Te3/graphene heterostructure, stable solid state pulsed lasers based on the Bi2Te3/graphene saturable absorber have attracted intensive attention. In this work, the Bi2Te3/graphene heterostructure with good nonlinear absorption characteristics was synthesized by a self-assembly solvothermal route, and the optical saturable absorption properties of the saturable absorber were investigated. Owing to the large modulation depth of Bi2Te3 nanosheets and the high thermal conductivity of graphene, the Bi2Te3/graphene heterostructure saturable absorber shown good nonlinear saturable absorber performance and contributed the improved passively Q-switched Yb3+: GdAl3(BO3)4 pulsed laser when compared with that of the pure Bi2Te3 based Yb3+: GdAl3(BO3)4 laser, no matter pulse width or pulse energy. Our work demonstrates that the Bi2Te3/graphene heterostructure was a promising saturable absorber in ~1 μm solid-state pulsed lasers.
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Guo X, Liu S, Wang W, Li C, Yang Y, Tian Q, Liu Y. Plasmon-induced ultrafast charge transfer in single-particulate Cu 1.94S-ZnS nanoheterostructures. NANOSCALE ADVANCES 2021; 3:3481-3490. [PMID: 36133727 PMCID: PMC9418435 DOI: 10.1039/d1na00037c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/14/2021] [Accepted: 03/22/2021] [Indexed: 06/16/2023]
Abstract
Recombination centers generated from structural and interfacial defects in nanoheterostructures (NHs) prevent effective photo-induced charge transfer and have blocked the advance of many photoresponsive applications. Strategies to construct high-quality interfaces in NHs are emerging but are limited in the release of interfacial strain and the integrality of the sublattice. Herein, we synthesize single-particulate Cu1.94S-ZnS NHs with a continuous sublattice using a nanoscale cation exchange reaction (CE). Under near-infrared (NIR) radiation (λ = 1500 nm), femtosecond open-aperture (OA) Z-scan measurements are applied to investigate the nonlinear optical features of samples and verify the existence of plasma-induced charge transfer in the Cu1.94S-ZnS NHs system. The resulting charge transfer time (τ CT) of ∼0.091 picoseconds (ps) was confirmed by the femtosecond time-resolved pump-probe technique. Such an ultrafast charge transfer process has been rarely reported in semiconductor-semiconductor NHs. The results suggest that CE can be used as a promising tool to construct well-ordered interfacial structures, which are significant for the performance enhancement of NHs for photon utilization.
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Affiliation(s)
- Xueyi Guo
- School of Metallurgy and Environment, Central South University Changsha 410083 China
- Research Institute of Resource Recycling, Central South University Changsha 410083 China
| | - Sheng Liu
- School of Metallurgy and Environment, Central South University Changsha 410083 China
- Research Institute of Resource Recycling, Central South University Changsha 410083 China
| | - Weijia Wang
- State Key Laboratory for Powder Metallurgy, Powder Metallurgy Research Institute, Central South University Changsha 410083 China
- Research Institute of Resource Recycling, Central South University Changsha 410083 China
| | - Chongyao Li
- School of Metallurgy and Environment, Central South University Changsha 410083 China
- Research Institute of Resource Recycling, Central South University Changsha 410083 China
| | - Ying Yang
- School of Metallurgy and Environment, Central South University Changsha 410083 China
- Research Institute of Resource Recycling, Central South University Changsha 410083 China
| | - Qinghua Tian
- School of Metallurgy and Environment, Central South University Changsha 410083 China
- Research Institute of Resource Recycling, Central South University Changsha 410083 China
| | - Yong Liu
- State Key Laboratory for Powder Metallurgy, Powder Metallurgy Research Institute, Central South University Changsha 410083 China
- Research Institute of Resource Recycling, Central South University Changsha 410083 China
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She Y, Wu Z, You S, Du Q, Chu X, Niu L, Ding C, Zhang K, Zhang L, Huang S. Multiple-Dimensionally Controllable Nucleation Sites of Two-Dimensional WS 2/Bi 2Se 3 Heterojunctions Based on Vapor Growth. ACS APPLIED MATERIALS & INTERFACES 2021; 13:15518-15524. [PMID: 33769777 DOI: 10.1021/acsami.1c00377] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) heterojunctions have attracted great attention due to their excellent optoelectronic properties. Until now, precisely controlling the nucleation density and stacking area of 2D heterojunctions has been of critical importance but still a huge challenge. It hampers the progress of controlled growth of 2D heterojunctions for optoelectronic devices because the potential relation between numerous growth parameters and nucleation density is always poorly understood. Herein, by cooperatively controlling three parameters (substrate temperature, gas flow rate, and precursor concentration) in modified vapor deposition growth, the nucleation density and stacking area of WS2/Bi2Se3 vertical heterojunctions were successfully modulated. High-quality WS2/Bi2Se3 vertical heterojunctions with various stacking areas were effectively grown from single and multiple nucleation sites. Moreover, the potential nucleation mechanism and efficient charge transfer of WS2/Bi2Se3 vertical heterojunctions were systematically studied by utilizing the density functional theory and photoluminescence spectra. This modified vapor deposition strategy and the proposed mechanism are helpful in controlling the nucleation density and stacking area of other heterojunctions, which plays a key role in the preparation of electronic and optoelectronic nanodevices.
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Affiliation(s)
- Yihong She
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Zhen Wu
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Shengdong You
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Quan Du
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Xiaohong Chu
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Lijuan Niu
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Changchun Ding
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Kenan Zhang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Lijie Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Shaoming Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
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