A chemisorbed interfacial layer for seeding atomic layer deposition on graphite

Clicking beyond suspensions: understanding thiol-ene chemistry on solid-supported MoS2

Molecular functionalization of MoS2 has attracted a lot of attention due to its potential to afford fine-tuned hybrid materials that benefit from the power of synthetic chemistry and molecular design. Here, we report on the on-surface reaction of maleimides on bulk and molecular beam epitaxy grown single-layer MoS2, both in ambient conditions as well as ultrahigh vacuum using scanning probe microscopy.

Atomic Layer Deposition-A Versatile Toolbox for Designing/Engineering Electrodes for Advanced Supercapacitors

Atomic layer deposition (ALD) has become the most widely used thin-film deposition technique in various fields due to its unique advantages, such as self-terminating growth, precise thickness control, and excellent deposition quality. In the energy storage domain, ALD has shown great potential for supercapacitors (SCs) by enabling the construction and surface engineering of novel electrode materials. This review aims to present a comprehensive outlook on the development, achievements, and design of advanced electrodes involving the application of ALD for realizing high-performance SCs to date, as organized in several sections of this paper. Specifically, this review focuses on understanding the influence of ALD parameters on the electrochemical performance and discusses the ALD of nanostructured electrochemically active electrode materials on various templates for SCs. It examines the influence of ALD parameters on electrochemical performance and highlights ALD's role in passivating electrodes and creating 3D nanoarchitectures. The relationship between synthesis procedures and SC properties is analyzed to guide future research in preparing materials for various applications. Finally, it is concluded by suggesting the directions and scope of future research and development to further leverage the unique advantages of ALD for fabricating new materials and harness the unexplored opportunities in the fabrication of advanced-generation SCs.

Dynamic Gate Control of Aryldiazonium Chemistry on Graphene Field-Effect Transistors

As graphene field-effect transistors (GFETs) are becoming increasingly valued for sensor applications, efficiency and control of their surface functionalization become critical. Here, we introduce an innovative method using a gate electrode to precisely modulate aryldiazonium functionalization directly on graphene devices. Although this covalent chemistry is well-known, we show that its spontaneous reaction on GFETs is highly heterogeneous with a low overall yield. By dynamically tuning the gate voltage in the presence of the reactant, we can quickly enable or suppress the reaction, resulting in a high degree of homogeneity between devices. We are also able to monitor and control functionalization kinetics in real time. The mechanism for our approach is based on electron transfer availability, analogous to chemical, substrate-based, or electrochemical doping, but has the practical advantage of being fully implementable on devices or chips. This work illustrates how powerful the FET platforms are to study surface reactions on nanomaterials in real time.