1
|
Guo H, Pan J, Du S. First-Principles Study of the Schottky Contact, Tunneling Probability, and Optical Properties of MX/TiB 4 Heterojunctions (M = Ge, Sn; X = S, Se, Te): Strain Engineering Tunability. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31513-31523. [PMID: 38840440 DOI: 10.1021/acsami.4c05905] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
Designing two-dimensional (2D) heterojunctions with rapid response and minimal energy consumption holds immense significance for the advancement of the next generation of electronic devices. Here, we construct a series of Schottky heterojunctions based on TiB4 monolayer and group-IV monochalcogenide monolayers MX (M = Ge, Sn; X = S, Se, Te). Using first-principles calculations, we investigate the structural stability, Schottky contact barrier, tunneling probability, and optical properties of MX/TiB4 heterojunctions. The calculated binding energies reveal that X-type MX/TiB4 heterojunctions exhibit more stable structures than M- and C-type stacking modes. Schottky barrier heights (SBHs) indicate that X-type GeSe/TiB4 and GeTe/TiB4 form n-type Schottky contacts with SBHs of 0.497 and 0.132 eV, respectively, while SnS/TiB4 and SnSe/TiB4 form p-type Schottky contacts with SBHs of 0.557 and 0.418 eV, respectively. Moreover, X-type MX/TiB4 heterojunctions exhibit high susceptibility to interlayer electron tunneling due to their large tunneling probability and strong interlayer interaction. Meanwhile, enhanced optical absorption capacity in MX/TiB4 heterojunctions is also observed compared with individual TiB4 and MX monolayers. By applying in-plane biaxial strain, the transformation of MX/TiB4 heterojunctions from a Schottky contact to an Ohmic contact can also be realized. Our findings could offer valuable candidate materials and guidance for the design of the next generation of nanodevices with high electronic and optical performances.
Collapse
Affiliation(s)
- Hao Guo
- School of Urban Construction, Hebei Normal University of Science & Technology, Qinhuangdao 066004, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jinbo Pan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shixuan Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
| |
Collapse
|
2
|
Li Y, Yang W, Yu F, Huang R, Wen Y. Computational determination of a graphene-like TiB 4 monolayer for metal-ion batteries and a nitrogen reduction electrocatalyst. Phys Chem Chem Phys 2023; 25:7436-7444. [PMID: 36847782 DOI: 10.1039/d2cp05163j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2023]
Abstract
As an emerging two-dimensional (2D) material, the TiB4 monolayer possesses intrinsic advantages in electrochemical applications owing to its graphene-like structure and metallic characteristics. In this work, we performed density functional calculations to investigate the electrochemical properties of the TiB4 monolayer as an anode material for Li/Na/K ion batteries and as an electrocatalyst for the nitrogen reduction reaction (NRR). Our investigation reveals that Li/Na/K ions could be steadily adsorbed on the TiB4 monolayer with moderate adsorption energies, and tended to diffuse along two adjacent C-sites with lower energy barriers (0.231/0.094/0.067 eV for Li/Na/K ions) compared to the currently reported transition-metal boride monolayers. Furthermore, a N2 molecule can be spontaneously captured by the TiB4 monolayer with a negative Gibbs free energy (-0.925 eV and -0.326 eV for end-on and side-on adsorptions, respectively), hence provoking a conversion into NH3 along the most efficient reaction pathway (i.e., N2* → N2H* → HNNH* → H2NNH* → H3NNH* → NH* → NH2* → NH3*). In the hydrogenation process, the TiB4 monolayer exhibits much higher catalytic activity for the NRR as compared with other electrocatalysts, which should be attributed to the spontaneous achievement (ΔG < 0) at all hydrogenation reaction steps except the potential-determining step. Moreover, the TiB4 monolayer exhibits higher selectivity toward the NRR than the hydrogen evolution reaction. Our work advances the mechanistic understanding on the electrochemical properties of the TiB4 monolayer as an anode material for metal-ion batteries and as a NRR electrocatalyst, and provides significant guidance for developing high-performance multifunctional 2D materials.
Collapse
Affiliation(s)
- Yameng Li
- Department of Physics, Xiamen University, Xiamen 361005, China.
| | - Weihua Yang
- Department of Physics, Xiamen University, Xiamen 361005, China.
| | - Fangqi Yu
- Department of Physics, Xiamen University, Xiamen 361005, China.
| | - Rao Huang
- Department of Physics, Xiamen University, Xiamen 361005, China.
| | - Yuhua Wen
- Department of Physics, Xiamen University, Xiamen 361005, China.
| |
Collapse
|
3
|
Wu JF, Ke SS, Guo Y, Zhang HW, Lü HF. Non-centrosymmetric Weyl semimetal state and strain effect in the twisted-brick phase transition metal monochalcogenides. NANOSCALE 2023; 15:2882-2890. [PMID: 36691812 DOI: 10.1039/d2nr04946e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Weyl semimetals are a class of gapless electronic excitation topological quantum materials upon breaking time-reversal or inversion symmetry. Here, we demonstrate the existence of the Weyl semimetal state in the non-centrosymmetric twisted-brick phase MoTe theoretically. The topological properties and strain effects of MoTe have been systematically studied based on first-principles calculations and the Wannier-based tight-binding method. In the absence of spin-orbit coupling (SOC), MoTe exhibits gapless nodal loop states related to the mirror reflection symmetry. When the SOC is turned on, the two nodal loops split into 22 pairs of Weyl points (WPs) with opposite chirality. When the effect of uniaxial (εz) strain is taken into account, the Weyl semimetal phase of MoTe shows great robustness and striking tunable topological strength. In particular, the total number of WPs changes significantly under strain. MoTe under +4% and +8% uniaxial strains have only four pairs of WPs with a relatively large separation in momentum space. These results show that MoTe under weak strain is a promising partly ideal type I Weyl semimetal candidate, while the isolog structure WTe both opens a direct gap with and without SOC, showing a compensated semimetal state.
Collapse
Affiliation(s)
- Jia-Fang Wu
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Sha-Sha Ke
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Yong Guo
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Huai-Wu Zhang
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Hai-Feng Lü
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| |
Collapse
|
4
|
Abedi S, Taghizadeh Sisakht E, Hashemifar SJ, Ghafari Cherati N, Abdolhosseini Sarsari I, Peeters FM. Prediction of novel two-dimensional Dirac nodal line semimetals in Al 2B 2 and AlB 4 monolayers. NANOSCALE 2022; 14:11270-11283. [PMID: 35880622 DOI: 10.1039/d2nr00888b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Topological semimetal phases in two-dimensional (2D) materials have gained widespread interest due to their potential applications in novel nanoscale devices. Despite the growing number of studies on 2D topological nodal lines (NLs), candidates with significant topological features that combine nontrivial topological semimetal phase with superconductivity are still rare. Herein, we predict Al2B2 and AlB4 monolayers as new 2D nonmagnetic Dirac nodal line semimetals with several novel features. Our extensive electronic structure calculations combined with analytical studies reveal that, in addition to multiple Dirac points, these 2D configurations host various highly dispersed NLs around the Fermi level, all of which are semimetal states protected by time-reversal and in-plane mirror symmetries. The most intriguing NL in Al2B2 encloses the K point and crosses the Fermi level, showing a considerable dispersion and thus providing a fresh playground to explore exotic properties in dispersive Dirac nodal lines. More strikingly, for the AlB4 monolayer, we provide the first evidence for a set of 2D nonmagnetic open type-II NLs coexisting with superconductivity at a rather high transition temperature. The coexistence of superconductivity and nontrivial band topology in AlB4 not only makes it a promising material to exhibit novel topological superconducting phases, but also a rather large energy dispersion of type-II nodal lines in this configuration may offer a platform for the realization of novel topological features in the 2D limit.
Collapse
Affiliation(s)
- Saeid Abedi
- Department of Physics, Isfahan University of Technology, Isfahan, 84156-83111, Iran.
| | | | - S Javad Hashemifar
- Department of Physics, Isfahan University of Technology, Isfahan, 84156-83111, Iran.
| | - Nima Ghafari Cherati
- Department of Physics, Isfahan University of Technology, Isfahan, 84156-83111, Iran.
| | | | - Francois M Peeters
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
| |
Collapse
|
5
|
Ding G, SUN T, Surucu G, Surucu O, Gencer A, Wang X. Complex nodal structure phonons formed by open and closed nodal lines in CoAsS and Na2CuP solids. Phys Chem Chem Phys 2022; 24:17210-17216. [DOI: 10.1039/d2cp01992b] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Topological phononic states with nodal lines have not only updated our knowledge of the phases of matter in a fundamental way, they have also become a major frontier research direction...
Collapse
|